公开(公告)号：US20150154985A1

公开(公告)日：2015-06-04

申请号：US14615940

申请日：2015-02-06

Applicant: Seagate Technology LLC

Inventor： Eric Meloche ,  Bin Lu ,  Lixin Jia ,  Jianhua Xue ,  John David Westwood ,  Mark Anthony Gubbins ,  Alexandru Cazacu

IPC: G11B5/11

CPC classification number: G11B5/11 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/315

Abstract: Data storage systems having barriers that may reduce erasure flux and increase write-ability are provided. Data storage systems include a writing element. The writing element has a write pole with a flare region. A magnetic flux barrier is located along the write pole flare region. The magnetic flux barrier is illustratively made from an in-plane magnetically anisotropic material that has an easy plane of magnetization. In another embodiment, a data storage system includes a writing element having an air bearing surface and a shield at the air bearing surface. The shield has a magnetic permeability of approximately zero. The shield illustratively includes alternating layers of positive and negative permeabilities. The shield optionally includes a plurality of shields that may include top, bottom, and side shields.

Abstract translation: 提供了具有可能减少擦除通量并增加写入能力的障碍的数据存储系统。 数据存储系统包括写入元件。 写入元件具有带闪光区域的写入极。 磁通势垒位于写磁极耀斑区域。 磁通势垒示意性地由具有易磁化平面的面内磁各向异性材料制成。 在另一个实施例中，数据存储系统包括具有空气轴承表面和在空气支承表面处的屏蔽的书写元件。 屏蔽具有大约零的磁导率。 屏蔽件示例性地包括正和负磁导率的交替层。 屏蔽件可选地包括可以包括顶部，底部和侧部屏蔽件的多个屏蔽件。

公开(公告)号：US20150097255A1

公开(公告)日：2015-04-09

申请号：US14568645

申请日：2014-12-12

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Bin Lu ,  Qing He ,  Mark Covington ,  Yunhao Xu ,  Wei Tian

IPC: H01L43/08 ,  H01L43/02

CPC classification number: H01L43/08 ,  G01R33/098 ,  G11B5/3909 ,  G11B2005/3996 ,  H01L43/02

Abstract: In certain embodiments, a tunneling magneto-resistive (TMR) sensor includes a sensor stack positioned between a seed layer and a cap layer. The seed layer includes a first buffer layer that includes a non-magnetic nickel alloy.In certain embodiments, a sensor stack includes a top and bottom shield and a seed layer positioned adjacent to the bottom shield. The seed layer has a first buffer layer that includes a nickel alloy.

Abstract translation: 在某些实施例中，隧道磁阻（TMR）传感器包括位于种子层和覆盖层之间的传感器堆叠。 种子层包括包含非磁性镍合金的第一缓冲层。 在某些实施例中，传感器堆叠包括顶部和底部屏蔽以及邻近底部屏蔽定位的种子层。 种子层具有包括镍合金的第一缓冲层。

公开(公告)号：US20140342188A1

公开(公告)日：2014-11-20

申请号：US14451779

申请日：2014-08-05

Applicant: Seagate Technology LLC

Inventor： Yingguo Peng ,  Xiaowei Wu ,  Ganping Ju ,  Bin Lu

IPC: G11B5/65

CPC classification number: G11B5/653 ,  G11B5/64 ,  G11B5/65 ,  G11B5/84

Abstract: An apparatus includes a substrate and a magnetic layer coupled to the substrate. The magnetic layer includes an alloy that has magnetic hardness that is a function of the degree of chemical ordering of the alloy. The degree of chemical ordering of the alloy in a first portion of the magnetic layer is greater than the degree of chemical ordering of the alloy in a second portion of the magnetic layer, and the first portion of the magnetic layer is closer to the substrate than the second portion of the magnetic layer.

Abstract translation: 一种装置包括基板和耦合到该基板的磁性层。 磁性层包括具有作为合金的化学排序程度的函数的磁性硬度的合金。 合金在磁性层的第一部分中的化学排序程度大于磁性层第二部分中合金的化学排序程度，并且磁性层的第一部分比第二部分更靠近基体 磁性层的第二部分。