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公开(公告)号:US10121847B2
公开(公告)日:2018-11-06
申请号:US15462741
申请日:2017-03-17
Applicant: Texas Instruments Incorporated
Inventor: Benjamin Stassen Cook , Barry Jon Male , Robert Alan Neidorff
IPC: H01L23/495 , H01L49/02 , H01L23/66
Abstract: A galvanic isolation device includes a first integrated circuit (IC) die that has communication circuitry formed in a circuit layer below the top surface. A first conductive plate is formed on the IC die proximate the top surface, and is coupled to the communication circuitry. A dielectric isolation layer is formed over a portion of the top surface of the IC after the IC is fabricated such that the dielectric isolation layer completely covers the conductive plate. A second conductive plate is juxtaposed with the first conductive plate but separated by the dielectric isolation layer such that the first conductive plate and the second conductive plate form a capacitor. The second conductive plate is configured to be coupled to a second communication circuit.
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公开(公告)号:US20180269272A1
公开(公告)日:2018-09-20
申请号:US15462741
申请日:2017-03-17
Applicant: Texas Instruments Incorporated
Inventor: Benjamin Stassen Cook , Barry Jon Male , Robert Alan Neidorff
IPC: H01L49/02 , H01L23/66 , H01L23/495
CPC classification number: H01L28/60 , H01L23/49575 , H01L23/66 , H01L2223/6611
Abstract: A galvanic isolation device includes a first integrated circuit (IC) die that has communication circuitry formed in a circuit layer below the top surface. A first conductive plate is formed on the IC die proximate the top surface, and is coupled to the communication circuitry. A dielectric isolation layer is formed over a portion of the top surface of the IC after the IC is fabricated such that the dielectric isolation layer completely covers the conductive plate. A second conductive plate is juxtaposed with the first conductive plate but separated by the dielectric isolation layer such that the first conductive plate and the second conductive plate form a capacitor. The second conductive plate is configured to be coupled to a second communication circuit.
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公开(公告)号:US20180190628A1
公开(公告)日:2018-07-05
申请号:US15395584
申请日:2016-12-30
Applicant: Texas Instruments Incorporated
Inventor: Barry Jon Male , Benjamin Cook , Robert Alan Neidorff , Steve Kummerl
IPC: H01L25/16 , H01L31/02 , H01L31/167 , H01L49/02 , H01L23/00 , H01L23/495
CPC classification number: H01L25/167 , H01F38/14 , H01L23/315 , H01L23/49 , H01L23/49575 , H01L24/08 , H01L24/48 , H01L24/85 , H01L28/10 , H01L31/02005 , H01L31/0203 , H01L31/101 , H01L31/103 , H01L31/1105 , H01L31/167 , H01L33/00 , H01L33/62 , H01L2224/08113 , H01L2224/48091 , H01L2224/48245 , H01L2924/12041 , H01L2924/12043 , H04B10/803
Abstract: Disclosed examples include integrated circuits with a leadframe structure, a first circuit structure including a light source configured to generate a light signal along an optical path, a second circuit structure including a light sensor facing the optical path to receive the light signal, and a molded package structure enclosing portions of the leadframe structure, the molded package structure having a cavity defined by an interior surface of the molded package structure, the optical path extending in the cavity between the first and second circuit structures.
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