公开(公告)号：EP3271950A1

公开(公告)日：2018-01-24

申请号：EP16715932.6

申请日：2016-03-18

Applicant: The Regents Of The University Of Michigan

Inventor： FORREST, Stephen, R. ,  LEE, Kyusang ,  FAN, Dejiu

IPC: H01L31/18 ,  H01L21/78

CPC classification number: H01L21/78 ,  C09K13/00 ,  C30B33/08 ,  H01L21/7813 ,  H01L31/1896 ,  H01L33/0079 ,  Y02E10/50

Abstract: Disclosed herein are methods to eliminate or reduce the peeling-off of epitaxial lifted-off thin film epilayers on secondary host substrates that allow for the fabrication of high yield ELO processed thin film devices. The methods employ patterned strain-relief trenches.

公开(公告)号：EP3095137A2

公开(公告)日：2016-11-23

申请号：EP15742412.8

申请日：2015-01-15

Applicant: The Regents Of The University Of Michigan

Inventor： FORREST, Stephen, R. ,  LEE, Kyusang ,  FAN, Dejiu ,  ZIMMERMAN, Jeramy

IPC: H01L31/0304 ,  H01L31/0687 ,  H01L31/0693 ,  H01L31/18 ,  H01L31/054

CPC classification number: H01L31/1896 ,  H01L31/03046 ,  H01L31/035281 ,  H01L31/0547 ,  H01L31/0687 ,  H01L31/0693 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/544 ,  Y02P70/521

Abstract: There is disclosed a method of preparing a photovoltaic device. In particular, the method comprises integrating epitaxial lift-off solar cells with mini-parabolic concentrator arrays via a printing method. Thus, there is disclosed a method comprising providing a growth substrate; depositing at least one protection layer on the growth substrate; depositing at least one sacrificial layer on the protection layer; depositing at least one photoactive cell on the sacrificial layer; etching a pattern of at least two parallel trenches that extend from the at least one photoactive cell to the sacrificial layer; depositing a metal on the at least one photoactive cell; bonding said metal to a host substrate; and removing the sacrificial layer with one or more etch steps. The host substrate can be a siloxane, which when rolled, can form a stamp used to integrate solar cells into concentrator arrays. There are also disclosed a method of making a growth substrate and the growth substrate made therefrom.

公开(公告)号：EP3069388A1

公开(公告)日：2016-09-21

申请号：EP14866795.9

申请日：2014-11-11

Applicant: The Regents Of The University Of Michigan

Inventor： FORREST, Stephen, R. ,  LEE, Kyusang

IPC: H01L31/18

CPC classification number: H01L31/1864 ,  H01L31/02327 ,  H01L31/18 ,  H01L31/1892 ,  H01L31/1896 ,  Y02E10/50

Abstract: A process for assembling a thin-film optoelectronic device is disclosed. The process may include providing a growth structure comprising a wafer having a growing surface, a sacrificial layer, and a device region. The process may further include providing a host substrate and depositing a first metal layer on the device region and depositing a second metal layer on the host substrate. The process may further include bonding the first metal layer to the second metal layer by pressing the first and second metal layers together at a bonding temperature, wherein the bonding temperature is above room temperature and below the lower of a glass transition temperature of the host substrate and a melting temperature of the host substrate.

公开(公告)号：EP3127165B1

公开(公告)日：2020-08-12

申请号：EP15717751.0

申请日：2015-04-06

Applicant: The Regents Of The University Of Michigan

Inventor： LEE, Kyusang ,  FORREST, Stephen, R.

IPC: H01L31/0304 ,  H01L31/18 ,  H01L31/054

公开(公告)号：EP3271950B1

公开(公告)日：2019-03-06

申请号：EP16715932.6

申请日：2016-03-18

Applicant: The Regents Of The University Of Michigan

Inventor： FORREST, Stephen, R. ,  LEE, Kyusang ,  FAN, Dejiu

IPC: H01L31/18 ,  H01L21/78

公开(公告)号：EP3039708A1

公开(公告)日：2016-07-06

申请号：EP14843191.9

申请日：2014-08-26

Applicant: The Regents Of The University Of Michigan

Inventor： FORREST, Stephen, R. ,  LEE, Kyusang ,  ZIMMERMAN, Jeramy, D.

IPC: H01L21/18

CPC classification number: H01L31/1896 ,  H01L21/187 ,  H01L31/1892 ,  Y02E10/50

Abstract: The present disclosure generally relates to thin film liftoff processes for use in making devices such as electronic and optoelectronic devices, e.g., photovoltaic devices. The methods described herein use a combination of epitaxial liftoff and spalling techniques to quickly and precisely control the separation of an epilayer from a growth substrate. Provided herein are growth structures having a sacrificial layer positioned between a growth substrate and a sacrificial layer. Exemplary methods of the present disclosure include forming at least one notch in the sacrificial layer and spalling the growth structure by crack propagation at the at least one notch to separate the epilayer from the growth substrate.

公开(公告)号：EP2812927A2

公开(公告)日：2014-12-17

申请号：EP13705339.3

申请日：2013-02-07

Applicant: The Regents Of The University Of Michigan

Inventor： LEE, Kyusang ,  ZIMMERMAN, Jeramy ,  FORREST, Stephen, R.

IPC: H01L31/18

CPC classification number: H01L21/3247 ,  H01L21/3065 ,  H01L21/3245 ,  H01L31/1896 ,  H01L33/007 ,  Y02E10/50

Abstract: There is disclosed a method of preserving the integrity of a growth substrate comprising providing a structure comprising a growth substrate, one or more protective layers, a sacrificial layer, and at least one epilayer, wherein the sacrificial layer and the one or more protective layers are positioned between the growth substrate and the at least one epilayer; releasing the at least one epilayer by etching the sacrificial layer with an etchant; and heat treating the growth substrate and/or at least one of the protective layers.