公开(公告)号：US20200294842A1

公开(公告)日：2020-09-17

申请号：US16815276

申请日：2020-03-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro IKEDA ,  Eiki KAMATA

IPC: H01L21/687 ,  H01L21/3065 ,  H01L21/67

Abstract: A plasma processing apparatus includes a stage provided in a chamber and having a heater therein, the stage being configured to place a substrate thereon, and an annular member provided around the stage to be spaced apart therefrom and formed of a dielectric material. At least one annular groove is formed in a lower surface of the annular member in a radial direction.

公开(公告)号：US20190180984A1

公开(公告)日：2019-06-13

申请号：US16213042

申请日：2018-12-07

Applicant: Tokyo Electron Limited

Inventor： Taro IKEDA ,  Toshihiko IWAO

IPC: H01J37/32 ,  C23C16/50 ,  C23C16/455

Abstract: An antenna includes a first waveguide configured to guide VHF radio frequency waves, and a second waveguide configured to guide the VHF radio frequency waves supplied from the first waveguide, the second waveguide having a pair of metal reflective plates therein facing each other across a longitudinal distance along the second waveguide, wherein a tip end of the first waveguide is coupled to the second waveguide at a sideways point thereof between the metal reflective plates, and wherein a distance between the metal reflective plates is λg/4+λg·n/2, λg being a wavelength of the VHF radio frequency waves in tube, and n being an integer greater than or equal to zero.

公开(公告)号：US20170032933A1

公开(公告)日：2017-02-02

申请号：US15217187

申请日：2016-07-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tamotsu HARADA ,  Emiko HARA ,  Taro IKEDA

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/3222 ,  H01J37/32311 ,  H01J37/32715 ,  H01J37/32733 ,  H01J37/32834

Abstract: There is provided a microwave plasma source for radiating microwaves into a chamber of a plasma processing apparatus to generate surface wave plasma, including: a plurality of microwave radiation mechanisms provided in a ceiling wall of the chamber and configured to radiate microwaves into the chamber; and a perforated plate provided in a high electric field formation region used as a high electric field region when the microwaves are radiated from microwave radiation surfaces of the microwave radiation mechanisms into the chamber and which exists just below the microwave radiation surfaces. The perforated plate has a function of confining surface waves formed just below the microwave radiation surfaces when the microwaves are radiated from the microwave radiation mechanism, in a space surrounded by the microwave radiation surfaces and the perforated plate, and a function of keeping high a power absorption efficiency of plasma generated in the space.

Abstract translation: 提供了一种用于将微波辐射到等离子体处理装置的室中以产生表面波等离子体的微波等离子体源，包括：多个微波辐射机构，设置在室的顶壁中并且被配置为将微波辐射到室中; 以及设置在高电场形成区域中的多孔板，当微波从微波辐射机构的微波辐射表面辐射到室中并且位于微波辐射表面正下方时，该高电场形成区域用作高电场区域。 当微波从微波辐射机构辐射的微波辐射表面和多孔板所包围的空间中时，多孔板具有限制形成在微波辐射表面正下方的表面波的功能，并且具有保持高功率的功能 在空间中产生的等离子体的吸收效率。

公开(公告)号：US20160358757A1

公开(公告)日：2016-12-08

申请号：US15165388

申请日：2016-05-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro IKEDA ,  Tomohito KOMATSU

IPC: H01J37/32

Abstract: A microwave plasma source for forming a surface wave plasma by radiating a microwave into a chamber of a plasma processing apparatus, includes: a microwave output part; a microwave transmission part configured to transmit microwave outputted from the microwave output part; and a microwave radiation member configured to radiate the microwave into the chamber, wherein the microwave transmission part includes a microwave introduction mechanism configured to introduce the microwave into the microwave radiation member. The microwave radiation member includes: a metal main body; a dielectric slow-wave member installed in a portion of the main body; a plurality of slots configured to radiate the microwave introduced through the dielectric slow-wave member therethrough; and a dielectric microwave transmission member installed in a portion facing the chamber in the main body to cover a region where the slots are formed; and a plurality of dielectric layers installed to be separated from each other.

Abstract translation: 一种用于通过将微波辐射到等离子体处理装置的腔室中而形成表面波等离子体的微波等离子体源包括：微波输出部分; 微波发送部，被配置为发送从所述微波输出部输出的微波; 以及微波辐射部件，被配置为将微波辐射到所述室中，其中所述微波传输部分包括被配置为将所述微波引入到所述微波辐射部件中的微波引入机构。 微波辐射构件包括：金属主体; 安装在所述主体的一部分中的电介质慢波部件; 多个狭槽，被配置为辐射通过介电慢波件导入的微波; 以及介电微波传输构件，安装在面向主体中的腔室的部分中以覆盖形成狭槽的区域; 以及安装成彼此分离的多个电介质层。

公开(公告)号：US20130168389A1

公开(公告)日：2013-07-04

申请号：US13726963

申请日：2012-12-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro IKEDA ,  Sumi TANAKA

IPC: H05B6/64

CPC classification number: H05B6/6402 ,  H05B6/70 ,  H05B6/806

Abstract: Four microwave introduction ports are arranged to deviate from directly above a wafer in such a way that the long sides thereof are in parallel to at least one of the four straight sides. The top surface of a rectifying plate which surrounds the wafer is inclined so as to be widened from the side of the wafer (inner side) toward the side of a sidewall portion (outer side) to form an inclined portion. The inclined portion is disposed to face the four microwave introduction ports in a vertical direction.

Abstract translation: 四个微波引入端口被布置成以使其长边平行于四个直边中的至少一个的方式偏离晶片的正上方。 围绕晶片的整流板的顶面倾斜，从晶片侧（内侧）向侧壁部侧（外侧）的侧面变宽，形成倾斜部。 倾斜部分设置为在垂直方向上面对四个微波导入口。

公开(公告)号：US20250104977A1

公开(公告)日：2025-03-27

申请号：US18885219

申请日：2024-09-13

Applicant: Tokyo Electron Limited

Inventor： Taro IKEDA ,  Eiki KAMATA

IPC: H01J37/32

Abstract: There is provided a plasma source comprising: a housing that defines a plasma generation space; a gas inlet disposed at the housing and configured to introduce a gas; a power supply part disposed at the housing and configured to supply a radio frequency (RF) power; a supply port disposed at the housing and configured to supply active species of plasma produced from the gas in the plasma generation space; a dielectric plate that is disposed at the housing, transmits the RF power from the power supply part to the plasma generation space, and has an opening at a center thereof; a slot formed between the power supply part and the dielectric plate and through which the RF power propagates; and a gas supply line disposed at the housing, and having one end connected to the gas inlet and the other end from which a gas is supplied to the opening.

公开(公告)号：US20240404805A1

公开(公告)日：2024-12-05

申请号：US18690810

申请日：2022-09-05

Applicant: Tokyo Electron Limited

Inventor： Mikio SATO ,  Eiki KAMATA ,  Taro IKEDA ,  Nobuhiko YAMAMOTO

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a control device and configured to plasmarize a gas supplied to an interior of a processing container to perform a plasma processing on an object to be processed, wherein the control device includes: a measurer configured to measure an electron energy distribution function of plasma in the interior of the processing container, and a parameter changer configured to change parameters relating to the plasma processing so that the electron energy distribution function measured by the measurer during the plasma processing approaches a target electron energy distribution function.

公开(公告)号：US20240212985A1

公开(公告)日：2024-06-27

申请号：US18392205

申请日：2023-12-21

Applicant: Tokyo Electron Limited

Inventor： Taro IKEDA ,  Takeshi ISHIDA ,  Tomoki HONDA ,  Hiroyuki MIYASHITA

IPC: H01J37/32 ,  H01B9/00

CPC classification number: H01J37/32174 ,  H01B9/003 ,  H01B9/006 ,  H01J37/3211

Abstract: A filter circuit includes a housing made of a conductor and comprising an input port and an output port, each of which comprises an outer conductor and an inner conductor, wherein the housing is configured to have a ground potential together with the outer conductors of the input port and the output port, a first protrusion made of a conductor and connected to the housing, wherein the first protrusion is configured to protrude into the housing, and a power supply line provided within the housing and insulated from the housing. The power supply line includes an input-side conductor which is the inner conductor of the input port, an output-side conductor which is the inner conductor of the output port, and an antenna connected to the input-side conductor and the output-side conductor and formed to surround the first protrusion.

公开(公告)号：US20240203692A1

公开(公告)日：2024-06-20

申请号：US18590058

申请日：2024-02-28

Applicant: Tokyo Electron Limited ,  The University of Shiga Prefecture

Inventor： Shin OOWADA ,  Kazushi KANEKO ,  Masaaki MATSUKUMA ,  Eiki KAMATA ,  Satoru KAWAKAMI ,  Taro IKEDA ,  Osamu SAKAI

IPC: H01J37/32

CPC classification number: H01J37/32284 ,  H01J37/3222 ,  H01J37/32238 ,  H01J37/32256 ,  H01J37/32715 ,  H01J2237/327

Abstract: A plasma processing apparatus includes a processing container, an electromagnetic wave generator, and a resonator array structure. The processing container provides a processing space. The electromagnetic wave generator generates an electromagnetic wave for plasma excitation that is supplied to the processing space. The resonator array structure is formed by arranging resonators configured to resonate with a magnetic field component of the electromagnetic wave, each of the resonators having a size smaller than a wavelength of the electromagnetic wave, and is positioned in the processing container.

公开(公告)号：US20240030008A1

公开(公告)日：2024-01-25

申请号：US18353757

申请日：2023-07-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Eiki KAMATA ,  Taro HAYAKAWA ,  Taro IKEDA

IPC: H01J37/32

CPC classification number: H01J37/32715 ,  H01J37/32357 ,  H01J37/3222 ,  H01J2237/20214 ,  H01J2237/20285

Abstract: A plasma processing apparatus disclosed herein includes a stage disposed in a processing container and configured to mount thereon a substrate, a rotary driving mechanism configured to rotatably drive the stage, and a plurality of plasma sources provided on an upper wall of the processing container facing the stage. The plurality of plasma sources are not arranged axially symmetrically with respect to a rotation axis of the stage.