公开(公告)号：US20160043195A1

公开(公告)日：2016-02-11

申请号：US14919738

申请日：2015-10-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chia-Fu Hsu ,  Chun-Mao Chiou ,  Shih-Chieh Hsu ,  Jian-Cun Ke ,  Chun-Lung Chen ,  Lung-En Kuo

IPC: H01L29/49 ,  H01L29/51 ,  H01L29/78

CPC classification number: H01L29/495 ,  H01L21/28088 ,  H01L21/31116 ,  H01L29/4983 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/78

Abstract: A semiconductor device is disclosed. The semiconductor device includes a substrate, a gate structure on the substrate, and a spacer adjacent to the gate structure, in which the bottom of the spacer includes a tapered profile and the tapered profile comprises a convex curve.

Abstract translation: 公开了一种半导体器件。 半导体器件包括衬底，衬底上的栅极结构和与栅极结构相邻的间隔物，其中间隔物的底部包括锥形轮廓，并且锥形轮廓包括凸曲线。

公开(公告)号：US20150332926A1

公开(公告)日：2015-11-19

申请号：US14280654

申请日：2014-05-18

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Jian-Cun Ke ,  Chih-Wei Yang ,  Chia-Fu Hsu

IPC: H01L21/28 ,  H01L29/66

CPC classification number: H01L29/7833 ,  H01L21/28211 ,  H01L21/28229 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/66568 ,  H01L29/6659

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; injecting a first precursor and forming an interfacial layer on the substrate; and injecting a second precursor and performing a thermal treatment for forming an interface layer on the interfacial layer.

Abstract translation: 公开了半导体器件的制造方法。 该方法包括以下步骤：提供衬底; 注入第一前体并在基底上形成界面层; 以及注入第二前体并进行用于在界面层上形成界面层的热处理。