公开(公告)号：US09842760B1

公开(公告)日：2017-12-12

申请号：US15215554

申请日：2016-07-20

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Li-Wei Feng ,  Tong-Jyun Huang ,  Shih-Hung Tsai ,  Jyh-Shyang Jenq ,  Chun-Yao Yang ,  Ming-Shiou Hsieh ,  Rong-Sin Lin

IPC: H01L21/324 ,  H01L21/762 ,  H01L29/66 ,  H01L29/06 ,  H01L29/78 ,  H01L21/265

CPC classification number: H01L21/76237 ,  H01L21/2236 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7851

Abstract: A method for fabricating semiconductor device is disclosed. First, a substrate having a fin-shaped structure thereon is provided, a spacer is formed adjacent to the fin-shaped structure, and the spacer is used as mask to remove part of the substrate for forming an isolation trench, in which the isolation trench includes two sidewall portions and a bottom portion. Next, a plasma doping process is conducted to implant dopants into the two sidewall portions and the bottom portion of the isolation trench.

公开(公告)号：US20170338227A1

公开(公告)日：2017-11-23

申请号：US15652223

申请日：2017-07-17

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Li-Wei Feng ,  Tong-Jyun Huang ,  Shih-Hung Tsai ,  Jia-Rong Wu ,  Tien-Chen Chan ,  Yu-Shu Lin ,  Jyh-Shyang Jenq

IPC: H01L27/088 ,  H01L21/8234 ,  H01L21/311 ,  H01L29/66 ,  H01L29/06

Abstract: A semiconductor device includes at least a substrate, fin-shaped structures, a protection layer, epitaxial layers, and a gate electrode. The fin-shaped structures are disposed in a first region and a second region of the substrate. The protection layer conformally covers the surface of the substrate and the sidewalls of fin-shaped structures. The epitaxial layers respectively conformally and directly cover the fin-shaped structures in the first region. The gate electrode covers the fin-shaped structures in the second region, and the protection layer is disposed between the gate electrode and the fin-shaped structures.

公开(公告)号：US09653603B1

公开(公告)日：2017-05-16

申请号：US15139305

申请日：2016-04-26

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Li-Wei Feng ,  Shih-Hung Tsai ,  Yi-Fan Li ,  Kun-Hsin Chen ,  Tong-Jyun Huang ,  Jyh-Shyang Jenq ,  Nan-Yuan Huang

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/161 ,  H01L29/165 ,  H01L29/167 ,  H01L29/06 ,  H01L21/265 ,  H01L21/324 ,  H01L29/66

CPC classification number: H01L29/66795 ,  H01L21/265 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/26546 ,  H01L29/1054 ,  H01L29/7848 ,  H01L29/7849 ,  H01L29/785

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a recess in the substrate; forming a buffer layer in the recess; forming an epitaxial layer on the buffer layer; and removing part of the epitaxial layer, part of the buffer layer, and part of the substrate to form fin-shaped structures.

公开(公告)号：US20160293726A1

公开(公告)日：2016-10-06

申请号：US14710602

申请日：2015-05-13

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Rai-Min Huang ,  I-Ming Tseng ,  Tong-Jyun Huang ,  Kuan-Hsien Li

IPC: H01L29/66 ,  H01L21/311 ,  H01L21/027 ,  H01L27/088 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/40

CPC classification number: H01L29/66545 ,  H01L21/3086 ,  H01L21/823437 ,  H01L27/088 ,  H01L29/0649 ,  H01L29/401 ,  H01L29/6656 ,  H01L29/785

Abstract: A patterned structure of a semiconductor device includes a substrate, a first feature and a second feature. The first feature and the second feature are disposed on the substrate, and either of which includes a vertical segment and a horizontal segment. There is a distance between the vertical segment of the first feature and the vertical segment of the second feature, and the distance is less than the minimum exposure limits of an exposure apparatus.

Abstract translation: 半导体器件的图案化结构包括衬底，第一特征和第二特征。 第一特征和第二特征设置在基板上，并且其中之一包括垂直段和水平段。 在第一特征的垂直段和第二特征的垂直段之间存在距离，并且该距离小于曝光设备的最小曝光极限。

公开(公告)号：US09196546B2

公开(公告)日：2015-11-24

申请号：US14025833

申请日：2013-09-13

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shih-Fang Tzou ,  Chien-Ming Lai ,  Yi-Wen Chen ,  Hung-Yi Wu ,  Tong-Jyun Huang ,  Chien-Ting Lin ,  Chun-Hsien Lin

IPC: H01L29/76 ,  H01L21/8238

CPC classification number: H01L29/4966 ,  H01L21/823842 ,  H01L21/823864 ,  H01L29/42364 ,  H01L29/66545

Abstract: A metal gate transistor is disclosed. The metal gate transistor includes a substrate, a metal gate on the substrate, and a source/drain region in the substrate. The metal gate further includes a high-k dielectric layer, a bottom barrier metal (BBM) layer on the high-k dielectric layer, a first work function layer on the BBM layer, a second work function layer between the BBM layer and the first work function layer, and a low resistance metal layer on the first work function layer. Preferably, the first work function layer includes a p-type work function layer and the second work function layer includes a n-type work function layer.

Abstract translation: 公开了一种金属栅极晶体管。 金属栅极晶体管包括衬底，衬底上的金属栅极和衬底中的源极/漏极区域。 金属栅极还包括高k电介质层，高k电介质层上的底部阻挡金属（BBM）层，BBM层上的第一功函数层，BBM层和第一层之间的第二功函数层 功函数层，第一功函数层上的低电阻金属层。 优选地，第一功函数层包括p型功函数层，第二功函数层包括n型功函数层。