Abstract:
A method of and apparatus for treating waste gas by irradiation with electron beams wherein an electron beam irradiation chamber for irradiation with electron beams from an electron beam accelerator is provided in the vicinity of a main duct for waste gas; a part of the waste gas to be treated is introduced into the electron beam irradiation chamber where the waste gas is irradiated with electron beams to thereby form active species such as O and OH radiacals; the waste gas having the active species formed therein is fed int the waste gas main duct by means of a feeding device; the waste gas fed into the waste gas main duct is dispersed into and mixed with the waste gas flowing through the main duct by means of a dispersing device, thereby changing noxious (gas) ingredients in the waste gas into the form of a mist or dust by the action of the active species; and the mist or dust is captured by means of a capturing device, for example, a dust collector.
Abstract:
La présente invention concerne un procédé pour produire des particules (10), comprenant comme étapes: on introduit dans une chambre de réaction au moins un flux de réaction (1) comprenant un premier élément chimique (typiquement Silicium) et se propageant selon une direction de flux (11); on projette un faisceau de rayonnement (3) à travers la chambre de réaction en intersection avec chaque flux de réaction (1) dans une zone d'interaction (14) par flux de réaction, pour former dans chaque flux de réaction des cœurs de particules comprenant le premier élément chimique, et on introduit, dans la chambre de réaction, un deuxième élément chimique (par exemple Aluminium) interagissant avec chaque flux de réaction (1) pour recouvrir les cœurs de particules d'une couche comprenant le deuxième élément chimique. Chaque flux de réaction (1) est de préférence dénué d'agent oxydant le premier élément chimique.
Abstract:
The molecular etcher carbonyl fluoride (COF2) or any of its variants, are provided for, according to the present invention, to increase the efficiency of etching and/or cleaning and/or removal of materials such as the unwanted film and/or deposits on the chamber walls and other components in a process chamber or substrate (collectively referred to herein as "materials"). The methods of the present invention involve igniting and sustaining a plasma, whether it is a remote or in-situ plasma, by stepwise addition of additives, such as but not limited to,. a saturated, unsaturated or partially unsaturated perfluorocarbon compound (PFC) having the general formula (CyFz) and/or an oxide of carbon (COx) to a nitrogen trifluoride (NF3) plasma into a chemical deposition chamber (CVD) chamber, thereby generating COF2.
Abstract:
The present invention is a vitrification and gasification system that operates at elevated pressures. The system includes a processing chamber having numerous penetrations, and seals for effectively sealing the penetrations to the processing chamber.
Abstract:
A rotating heat regenerator is used to recover heat from the syngas at it exits the reactor vessel of a waste or biomass gasifier. In some embodiments, three or more streams are passed through the heat exchanger. One stream is the dirty syngas, which heats the rotating material. A second stream is a cold stream that is heated as it passes through the material. A third stream is a cleaning stream, which serves to remove particulates that are collected on the rotating material as the dirty syngas passes through it. This apparatus can also be used as an auto-heat exchanger, or it can exchange heat between separate flows in the gasifier process. The apparatus can also be used to reduce the heating requirement for the thermal residence chamber (TRC) used downstream from the gasification system.