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291.发明专利Tomographic image generation method and tomographic image generation device 审中-公开TOMOGRAPHIC图像生成方法和图像图像生成装置
公开(公告)号：JP2014021127A
公开(公告)日：2014-02-03
申请号：JP2013151292
申请日：2013-07-22
Applicant: Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd. , Korea Advanced Inst Of Sci Technol , 韓国科学技術院Korea Advanced Institute Of Science And Technology
Inventor： LIM JAE-GUYN , PARK YONG KEUN , JANG JAE-DUCK , LEE SEONG-DEOK , JANG WOO-YOUNG
IPC: G01N21/17
CPC classification number: G06T11/003 , G01B9/02091 , G06T11/005
Abstract: PROBLEM TO BE SOLVED: To provide a tomographic image generation method and a tomographic image generation device with increased depth of light penetration.SOLUTION: A tomographic image generation method for generating a tomographic image includes: performing a depth scan at one point on a surface of a target body by using a light beam incident to the target body after passing through a spatial optical modulator; repeating depth scans at the same point for each of plural patterns of the spatial optical modulator, to obtain depth scan data for each of the plural patterns; generating a matrix R representing a vector space on the basis of a correlation of signal values of the depth scan data for each of the plural patterns; applying a predetermined matrix decomposition to the matrix R; separating a vector space represented as a sum of sub-spatial components into a noise sub-space and a signal sub-space by means of the matrix decomposition; reconstructing a vector space by using a component of the signal sub-space and/or a component of the noise sub-space; and generating a tomographic image on the basis of the reconstructed vector space.
Abstract translation: 要解决的问题：提供具有增加的光穿透深度的断层摄影图像生成方法和断层图像生成装置。解决方案：一种用于产生断层图像的断层图像生成方法包括：在一个表面上的一个点处执行深度扫描 通过使用在通过空间光学调制器之后入射到目标体的光束的目标体; 对于空间光学调制器的多个图案中的每一个，对同一点重复深度扫描，以获得多个图案中的每一个的深度扫描数据; 基于所述多个图案中的每一个的深度扫描数据的信号值的相关性，生成表示向量空间的矩阵R; 对矩阵R应用预定的矩阵分解; 通过矩阵分解将表示为子空间分量的和的向量空间分离成噪声子空间和信号子空间; 通过使用信号子空间的分量和/或噪声子空间的分量来重建向量空间; 以及基于重建的向量空间生成断层图像。
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292.发明专利
公开(公告)号：JP5394919B2
公开(公告)日：2014-01-22
申请号：JP2009515302
申请日：2007-06-12
CPC classification number: H02J7/0016 , Y02T10/7055 , Y10T307/50 , Y10T307/527 , Y10T307/538 , Y10T307/735
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公开(公告)号：JP5171846B2
公开(公告)日：2013-03-27
申请号：JP2009548994
申请日：2008-02-05
CPC classification number: H02J7/0016 , Y02T10/7055
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294.发明专利
公开(公告)号：JP5122467B2
公开(公告)日：2013-01-16
申请号：JP2008535452
申请日：2006-10-12
CPC classification number: H04L67/34 , H04L29/06027 , H04L65/1026 , H04L65/1036 , H04W4/00 , H04W8/245
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公开(公告)号：JP5074898B2
公开(公告)日：2012-11-14
申请号：JP2007300065
申请日：2007-11-20
CPC classification number: H01M8/1213 , H01M4/8605 , H01M2004/8684 , H01M2008/1293
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Patent Agency Ranking
公开(公告)号：JP5059876B2
公开(公告)日：2012-10-31
申请号：JP2009548995
申请日：2008-02-05
CPC classification number: H02J7/0018
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297.发明专利
公开(公告)号：JP2012049542A
公开(公告)日：2012-03-08
申请号：JP2011183497
申请日：2011-08-25
Applicant: Korea Advanced Inst Of Sci Technol , Korea Iron & Steel Co Ltd , 韓国科学技術院Korea Advanced Institute Of Science And Technology , 韓国鉄鋼株式会社
Inventor： LIM KOENG SU , JOHN JIN WANG
IPC: H01L31/042 , H01L31/04
CPC classification number: H01L31/1872 , H01L31/046 , H01L31/0465 , H01L31/072 , Y02E10/50 , Y02P70/521
Abstract: PROBLEM TO BE SOLVED: To provide an integrated thin-film photovoltaic device and a manufacturing method therefor.SOLUTION: The integrated thin-film photovoltaic device includes: a substrate having a plurality of trenches formed thereon; a first semiconductor substance layer formed on one side face of each trench from one base line inside each trench, and on a protruding plane area of the substrate continuing from the one side face; and a second semiconductor substance layer formed on the other side face of each trench from one base line on the first semiconductor substance inside each trench, and on the protruding plane area of the substrate continuing from the other side face, in which a portion of the second semiconductor substance layer is overlaid with the first semiconductor substance layer inside each trench.
Abstract translation: 要解决的问题：提供一种集成薄膜光伏器件及其制造方法。 解决方案：集成薄膜光伏器件包括：具有形成在其上的多个沟槽的衬底; 第一半导体物质层，其形成在每个沟槽内的每个沟槽的一个侧面的一个侧面上，以及在所述衬底的从所述一个侧面延伸的突出平面区域上; 以及第二半导体物质层，其形成在每个沟槽内的第一半导体物质的一个基线的每个沟槽的另一个侧面上，以及在与另一个侧面连续的基板的突出平面区域上， 第二半导体物质层与每个沟槽内的第一半导体物质层重叠。 版权所有（C）2012，JPO＆INPIT
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公开(公告)号：JP4845995B2
公开(公告)日：2011-12-28
申请号：JP2009112018
申请日：2009-05-01
Applicant: コリア アドバンスド インスティチュート オブ サイエンス アンド テクノロジーKorea Advanced Institute Of Science And Technology
IPC: H01L51/42
CPC classification number: H01L51/0023 , B82Y10/00 , H01L51/0036 , H01L51/0037 , H01L51/0047 , H01L51/4253 , H01L51/442 , H01L51/447 , Y02E10/549 , Y02P70/521
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300.发明专利
公开(公告)号：JP4804525B2
公开(公告)日：2011-11-02
申请号：JP2008300301
申请日：2008-11-26
CPC classification number: C12N15/67 , C07K14/4702
Abstract: The present invention relates to a gene construct which is capable of achieving efficient production of an antimicrobial peptide in a microorganism, and a method for efficient mass production and separation of an antimicrobial peptide using the same. The gene construct of the present invention has a translationally coupled configuration of two independent and separate cistrons which encode an acidic peptide and a basic antimicrobial peptide, each having an opposite charge, under the control of a single promoter. The translationally coupled acidic peptide and basic antimicrobial peptide undergo charge-charge interaction simultaneously with expression thereof to neutralize the potential cytotoxicity of the antimicrobial peptide, resulting in prevention of antimicrobial peptide-mediated killing of host microorganisms. In addition, a conjugate of the acidic peptide and the antimicrobial peptide can be separated without chemical or enzymatic treatment. Therefore, it is possible to achieve easy mass production of antimicrobial peptides from recombinant microorganisms.
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