331.
    发明专利
    未知

    公开(公告)号:DE50114399D1

    公开(公告)日:2008-11-20

    申请号:DE50114399

    申请日:2001-10-11

    Abstract: A device including a capacitor system for varying the impedance of a section of a coplanar waveguide. The capacitance of the capacitor system is variable. The capacitor system includes a first electrically conductive connection, a second electrically conductive connection, and a third electrically conductive connection at least partially. The signal line of the section of the waveguide is interrupted over a predetermined length, the first connection connecting the ground lines of the waveguide, the second connection connecting the ground lines of the waveguide, and the third connection connecting the two parts of the interrupted signal line.

    333.
    发明专利
    未知

    公开(公告)号:DE60106510T2

    公开(公告)日:2005-11-24

    申请号:DE60106510

    申请日:2001-04-12

    Abstract: Electrodes (2a, 2b) having slot patterns (3a, 3b), electrodes having strip patterns, or dielectric strips, for example, form transmission lines (2a, 2b, 3a, 3b) and resonator patterns (4a, 4b) on the upper faces of dielectric substrates (1a, 1b) or conductive substrates, for example. Resonators formed by the resonator patterns are arranged at the ends of the transmission lines at the end portions of the substrates. A pair of the resonators are electromagnetically coupled to each other, whereby the corresponding transmission lines are also connected to each other.

    TERMINAL UTILISATEUR BI-DIRECTIONNEL DE LARGE DIFFUSION A FREQUENCES D'EMISSION CONFIGURABLES

    公开(公告)号:FR2869743A1

    公开(公告)日:2005-11-04

    申请号:FR0450835

    申请日:2004-04-29

    Abstract: L'invention propose un produit évolutif permettant de réaliser un unique circuit très facilement configurable en usine pour un moindre coût de fabrication. La minimisation des coûts d'industrialisation se fait par l'augmentation des volumes de production. Une unité extérieure d'un terminal de réception incluant une voie de retour, comporte un moyen de filtrage passe-bande 206 qui laisse passer les signaux transposés situés dans une bande passante d'émission, et un moyen de filtrage réjecteur 205 qui rejette au moins une fréquence située dans la bande passante d'émission, le moyen de filtrage réjecteur étant neutralisé lorsque ni la fréquence définie de l'oscillateur et ni une fréquence multiple de la fréquence définie n'est située dans la bande passante d'émission.

    338.
    发明专利
    未知

    公开(公告)号:DE60106510D1

    公开(公告)日:2004-11-25

    申请号:DE60106510

    申请日:2001-04-12

    Abstract: Electrodes (2a, 2b) having slot patterns (3a, 3b), electrodes having strip patterns, or dielectric strips, for example, form transmission lines (2a, 2b, 3a, 3b) and resonator patterns (4a, 4b) on the upper faces of dielectric substrates (1a, 1b) or conductive substrates, for example. Resonators formed by the resonator patterns are arranged at the ends of the transmission lines at the end portions of the substrates. A pair of the resonators are electromagnetically coupled to each other, whereby the corresponding transmission lines are also connected to each other.

    339.
    发明专利
    未知

    公开(公告)号:DE69920546D1

    公开(公告)日:2004-11-04

    申请号:DE69920546

    申请日:1999-01-26

    Abstract: The present invention provides a coplanar line filter (1) or a duplexer, comprising: a dielectric substrate (2); a plurality of lambda /4 coplanar resonators (Q1 - Q4) provided on said dielectric substrate (2), said plurality of lambda /4 coplanar resonators (Q1 - Q4) comprising; a first center conductor (3 - 6) having electrical length corresponding to a quarter wavelength; and a ground conductor (10) provided with a gap from said first center conductor (3 - 6); a capacitive coupling portion (C1, C2) comprising a gap provided between said first center conductors (3 - 6) of a pair of said lambda /4 coplanar resonators (Q1 - Q4); and a inductive coupling portion (L1; L2), comprising a guide conductor (14, 15) which electrically connects said first center conductor (3 - 6) and ground (10), provided at a joint portion of a pair of said lambda /4 coplanar resonators (Q1 - Q4); said plurality of lambda /4 coplanar resonators (Q1 - Q4) being connected in series with said capacitive coupling portion (C1, C2) and said inductive coupling portion (L1, L2) provided alternately. By the above structure and arrangement, a small-scale coplanar line filter (1) or duplexer of simple design is obtained.

    340.
    发明专利
    未知

    公开(公告)号:NO317452B1

    公开(公告)日:2004-11-01

    申请号:NO984887

    申请日:1998-10-20

    Abstract: A thin-film multilayered electrode (3) has a dielectric substrate (2); a ground conductor (6) provided on a back surface of the dielectric substrate (2); and a plurality of thin-film conductive layers (4a, b, c, d) and dielectric layers (5a, b, c) alternately stacked on a front surface of the dielectric substrate (2). The ground conductor (6), one of the thin-film conductive layers (4a) in contact with the dielectric substrate (2) and the dielectric substrate (2) interposed therebetween form a TEM mode principal transmission line (7), and each thin-film dielectric layer (5a) and a pair of thin-film conductive layers (4a, b) sandwiching the thin-film dielectric layer to form a TEM mode sub-transmission line. A thickness and a dielectric constant of each thin-film dielectric layer (5a, b, c) is set such that phase velocities of TEM waves which propagate through the TEM mode principal transmission line (7) and the TEM mode sub-transmission lines are substantially identical with each other. A thickness of each thin-film conductive layer (4a, b, c, d) is set at a predetermined value which is smaller than a skin depth at a predetermined operating frequency such that electromagnetic fields between the TEM mode principal transmission line (7) and its adjacent TEM mode sub-transmission line, and between each adjacent pair of TEM mode sub-transmission lines, are coupled with each other. At least one of the thin-film dielectric layers (5a) which is closest to the dielectric substrate (2) has a thickness greater than that of the other thin-film dielectric layers (5b, c).

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