公开(公告)号：US5981071A

公开(公告)日：1999-11-09

申请号：US650623

申请日：1996-05-20

Applicant: Isaiah W. Cox

Inventor： Isaiah W. Cox

IPC: H01J1/30 ,  H01J19/24 ,  H01J21/04 ,  H01J1/02

CPC classification number: H01J21/04 ,  H01J1/30 ,  H01J19/24 ,  H01J2201/30457 ,  Y10T428/30

Abstract: A novel use of doped carbonaceous material is disclosed, integral to the operation of Vacuum Diode Heat Pumps and Vacuum Diode Thermionic Generators. In the preferred embodiment, the use of nitrogen-doped diamond enhances the operation of Vacuum Diode Heat Pumps and Vacuum Diode Thermionic Generators.

Abstract translation: 公开了掺杂碳质材料的新用途，与真空二极管热泵和真空二极管热电偶发生器的操作是一体的。 在优选实施例中，使用掺杂氮的金刚石增强了真空二极管热泵和真空二极管热电发生器的操作。

公开(公告)号：US5944573A

公开(公告)日：1999-08-31

申请号：US988046

申请日：1997-12-10

Applicant: Gerald T. Mearini ,  Robert E. Kusner

Inventor： Gerald T. Mearini ,  Robert E. Kusner

IPC: C23C16/02 ,  C23C16/27 ,  H01J9/02

CPC classification number: H01J9/025 ,  C23C16/0245 ,  C23C16/0272 ,  C23C16/271 ,  H01J2201/30457

Abstract: A process for depositing diamond crystals onto a field emission cathode. The process involves providing a cathode having a substrate, a gate layer and a plurality of emitters electrically insulated from the gate layer. An electric bias is applied to the gate layer and a ground potential is applied to the emitters. A heat source is positioned adjacent the cathode, and the cathode is exposed to a field of ions for a sufficient period to at least partially clean the emitters. A carbon containing gas is added to the atmosphere adjacent to the cathode such that carbon ions are dissociated from the gas and deposited on the emitters to form a "soot". The temperature of the cathode is then adjusted to a level which allows formation of diamond film.

Abstract translation: 将金刚石晶体沉积到场致发射阴极上的工艺。 该方法包括提供具有基板，栅极层和与栅极层电绝缘的多个发射极的阴极。 对栅极层施加电偏压，并将接地电位施加到发射极。 热源邻近阴极定位，并且阴极暴露于离子场足够的时间以至少部分地清洁发射器。 在与阴极相邻的气氛中加入含碳气体，使得碳离子与气体分离并沉积在发射体上以形成“烟灰”。 然后将阴极的温度调节至允许形成金刚石膜的水平。

公开(公告)号：US5900301A

公开(公告)日：1999-05-04

申请号：US779145

申请日：1997-01-03

Applicant: George E. Brandes ,  Jonathan C. Twichell ,  Michael W. Geis ,  John M. Macaulay ,  Robert M. Duboc, Jr. ,  Christopher J. Curtin

Inventor： George E. Brandes ,  Jonathan C. Twichell ,  Michael W. Geis ,  John M. Macaulay ,  Robert M. Duboc, Jr. ,  Christopher J. Curtin

IPC: H01J1/304 ,  H01J9/02 ,  B05D5/12

CPC classification number: H01J1/3042 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/319 ,  Y10T428/24124 ,  Y10T428/24198

Abstract: Fabrication of an electron-emitting device entails distributing electron-emissive carbon-containing particles (22) over a non-insulating region (12). The particles can be made electron emissive after the particle distributing step. Particle bonding material (24) is typically provided to bond the particles to the non-insulating region. The particle bonding material can include carbide formed by heating or/and can be created by modifying a layer (32) provided between the non-insulating region and the particles. In one embodiment, the particles emit electrons primarily from graphite or/and amorphous carbon regions. In another embodiment, the particles are made electron-emissive prior to the particle distributing step.

Abstract translation: 电子发射器件的制造需要在非绝缘区域（12）上分布电子发射含碳颗粒（22）。 在颗粒分布步骤之后，颗粒可以被制成电子发射。 通常提供颗粒粘合材料（24）以将颗粒结合到非绝缘区域。 粒子接合材料可以包括通过加热形成的碳化物和/或可以通过改变设置在非绝缘区域和颗粒之间的层（32）而形成的碳化物。 在一个实施方案中，颗粒主要从石墨或/和无定形碳区域发射电子。 在另一个实施方案中，颗粒在颗粒分布步骤之前被制成电子发射的。

公开(公告)号：US5837331A

公开(公告)日：1998-11-17

申请号：US614703

申请日：1996-03-13

Applicant: Eric P. Menu ,  John Song ,  Bernard F. Coll

Inventor： Eric P. Menu ,  John Song ,  Bernard F. Coll

IPC: C23C14/06 ,  C23C14/54 ,  C23C16/34 ,  H01J1/30 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H05H1/24 ,  B05D1/36 ,  B05D5/12 ,  C23C16/00

CPC classification number: C23C16/342 ,  C23C14/0605 ,  C23C14/548 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30457 ,  H01J2201/319

Abstract: An amorphous multi-layered structure (100, 200) is formed by a method including the steps of: i) positioning a deposition substrate (101) in a physical vapor deposition apparatus (300, 400, 500) ii) ionizing a precursor of a multi-phase material within the physical vapor deposition apparatus (300, 400, 500) iv) modulating the total ion impinging energy of the ions to deposit layers having predetermined properties corresponding to the total ion impinging energy values.

Abstract translation: 通过包括以下步骤的方法形成非晶多层结构（100,200）：i）将沉积基板（101）定位在物理气相沉积设备（300,400,500）中，ii）将 物理气相沉积装置（300,400,500）内的多相材料iv）调节离子的总离子冲击能量以沉积具有对应于总离子冲击能量值的预定特性的层。

公开(公告)号：US5836796A

公开(公告)日：1998-11-17

申请号：US548039

申请日：1995-10-25

Applicant: Joel Danroc

Inventor： Joel Danroc

IPC: H01J1/30 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12

CPC classification number: H01J9/025 ,  H01J3/022 ,  H01J2201/30403 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2329/00

Abstract: Process for the production of a field effect electron source and source obtained by said process, application to display means by cathodoluminescence. On an insulating substrate (2), said source comprises at least one cathode conductor (4), an insulating layer (6) covering the latter, at least one grid (8) formed on the insulating layer, holes (10) being formed through said grid and the insulating layer, and microtips (12) made from an electron emitting, metallic material, formed in said holes and covered with a deposit (13) of carbon diamond or diamond like carbon particles formed by electrophoresis or by joint electrochemical deposition of metal and carbon diamond or diamond like carbon.

Abstract translation: 用于生产通过所述方法获得的场效应电子源和源的方法，通过阴极发光应用于显示装置。 在绝缘基板（2）上，所述源极包括至少一个阴极导体（4），覆盖其上的绝缘层（6），形成在绝缘层上的至少一个格栅（8），穿过 所述栅格和绝缘层，以及由电子发射金属材料制成的微尖端（12），形成在所述孔中并覆盖有通过电泳形成的碳金刚石或类金刚石碳颗粒沉积物（13），或通过电化学沉积 金属和碳金刚石或类似钻石的碳。

公开(公告)号：US5828162A

公开(公告)日：1998-10-27

申请号：US546396

申请日：1995-10-20

Applicant: Joel Danroc ,  Danh Tran Van

Inventor： Joel Danroc ,  Danh Tran Van

IPC: H01J31/12 ,  G09F9/313 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J29/04 ,  H01J19/00

CPC classification number: H01J9/025 ,  H01J3/022 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2329/00

Abstract: A field effect electron source includes a grid electrode formed over an insulating layer that covers a cathode electrode formed on an insulating substrate. Holes are provided in the grid electrode-insulating layer structure, the holes extending to the cathode electrode formed on the insulating substrate. Electron emitting microheaps are formed within the holes above the exposed portions of the cathode electrode on the substrate. These microheaps each include at least a macropile of carbon diamond or diamond like carbon powder grains surrounded by the sidewalls of the hole.

Abstract translation: 场效应电子源包括在覆盖形成在绝缘基板上的阴极电极的绝缘层上形成的栅电极。 在栅电极绝缘层结构中设置孔，孔延伸到形成在绝缘基板上的阴极电极。 电子发射微胶片形成在衬底上的阴极电极的暴露部分上方的孔内。 这些微盖板每个包括由孔的侧壁包围的至少一个碳金刚石或金刚石像碳粉颗粒的大孔。

公开(公告)号：US5825122A

公开(公告)日：1998-10-20

申请号：US619704

申请日：1996-03-26

Applicant: Evgeny Invievich Givargizov ,  Viktor Vladimirovich Zhirnov ,  Alla Nikolaevna Stepanova ,  Lidiya Nikolaevna Obolenskaya

Inventor： Evgeny Invievich Givargizov ,  Viktor Vladimirovich Zhirnov ,  Alla Nikolaevna Stepanova ,  Lidiya Nikolaevna Obolenskaya

IPC: H01J31/12 ,  H01J1/304 ,  H01J19/24 ,  H01J1/30

CPC classification number: H01J1/3042 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319 ,  H01J2329/00

Abstract: A matrix field-emission cathode (5) comprises a monocrystalline silicon substrate (7) on which are arranged epitaxially grown pointed silicon emitters (1) which also act as ballast resistors connected in series to the emitters. In an advantageous embodiment of the proposed cathode, for a radius of curvature (r) at the emitter tip not exceeding 10 nm, the ratio of the height (h) of the emitter to the radius (r) is not less than 1000, while the ratio of height (h) to the diameter (D) at the emitter base is not less than 1. The angle .alpha. at the emitter tip does not exceed 30.degree.. The specific resistance of the emitter material is chosen so as to ensure that the resistance of each emitter will be comparable with the resistance between the cathode and the opposing electrode. The proposed cathode is used in an electronic device for displaying information which also has an anode (3) in the form of a strip (11) of phosphorescent material (10) and a conducting layer (9) whose projection onto the cathode (5) is perpendicular to the conducting paths (6) on the cathode; the anode itself acts as the control electrode.

Abstract translation: PCT No.PCT / RU95 / 00154 Sec。 371日期1997年3月26日 102（e）1997年3月26日PCT PCT 1995年7月18日PCT公布。 公开号WO96 / 03762 日期1996年2月8日A矩阵场致发射阴极（5）包括单晶硅衬底（7），其上布置有外延生长的尖晶硅发射体（1），其也用作与放射器串联连接的镇流电阻器。 在所提出的阴极的有利实施例中，对于发射极尖端处的曲率半径（r）不超过10nm，发射器的高度（h）与半径（r）之比不小于1000，而 发射极底部的高度（h）与直径（D）的比值不小于1.发射极尖端的角度α不超过30°。 选择发射极材料的电阻率，以确保每个发射极的电阻与阴极和相对电极之间的电阻相当。 所提出的阴极用于显示信息的电子设备中，该电子设备还具有磷光材料条带（11）形式的阳极（3）和在阴极（5）上投影的导电层（9） 垂直于阴极上的导电路径（6）; 阳极本身用作控制电极。

公开(公告)号：US5811916A

公开(公告)日：1998-09-22

申请号：US752235

申请日：1996-11-19

Applicant: Sungho Jin ,  Gregory Peter Kochanski ,  Lawrence Seibles ,  Wei Zhu

Inventor： Sungho Jin ,  Gregory Peter Kochanski ,  Lawrence Seibles ,  Wei Zhu

IPC: C30B29/04 ,  C30B30/02 ,  C30B31/20 ,  H01J1/304 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01L21/205 ,  H01J1/30

CPC classification number: H01J1/3042 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2329/00

Abstract: Applicants have discovered methods for making, treating and using diamonds which substantially enhance their capability for low voltage emission. Specifically, applicants have discovered that defect-rich diamonds--diamonds grown or treated to increase the concentration of defects--have enhanced properties of low voltage emission. Defect-rich diamonds are characterized in Raman spectroscopy by a diamond peak at 1332 cm.sup.-1 broadened by a full width at half maximum .DELTA.K in the range 5-15 cm.sup.-1 (and preferably 7-11 cm.sup.-1). Such defect-rich diamonds can emit electron current densities of 0.1 mA/mm.sup.2 or more at a low applied field of 25 V/.mu.m or less. Particularly advantageous structures use such diamonds in an array of islands or particles each less than 10 .mu.m in diameter at fields of 15 V/.mu.m or less.

公开(公告)号：US5801477A

公开(公告)日：1998-09-01

申请号：US383410

申请日：1995-01-31

Applicant: John M. Macaulay

Inventor： John M. Macaulay

IPC: H01J1/30 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01J1/02

CPC classification number: B82Y10/00 ,  H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/319

Abstract: A gated filament structure for a field emission display includes a plurality of filaments. Included is a substrate, an insulating layer positioned adjacent to the substrate, and a metal gate layer position adjacent to the insulating layer. The metal gate layer has a plurality of gates, the metal gate layer having an average thickness "s" and a top metal gate layer planar surface that is substantially parallel to a bottom metal gate layer planar surface. The metal gate layer includes a plurality of apertures extending through the gates. Each aperture has an average width "r" along a bottom planar surface of the aperture. Each aperture defines a midpoint plane positioned parallel to and equally distant from the top metal gate layer planar surface and the bottom metal gate layer planar surface. A plurality of filaments are individually positioned in an aperture. Each filament has a filament axis. The intersection of the filament axis and the midpoint plane defines a point "O". Each filament includes a filament tip terminating at a point "A". A majority of all filament tips of the display have a length "L" between each filament tip at point A and point O along the filament axis where, L.ltoreq.(s+r)/2.

Abstract translation: 用于场致发射显示器的门控灯丝结构包括多个灯丝。 包括衬底，邻近衬底定位的绝缘层以及与绝缘层相邻的金属栅极层位置。 金属栅极层具有多个栅极，金属栅极层具有平均厚度“s”以及基本上平行于底部金属栅极层平面的顶部金属栅极层平坦表面。 金属栅极层包括延伸通过栅极的多个孔。 每个孔具有沿着孔的底部平坦表面的平均宽度“r”。 每个孔限定平行于并等距离顶部金属栅极层平面和底部金属栅极层平面的中点平面。 多个细丝单独地定位在孔中。 每根灯丝都有一个灯丝轴线。 灯丝轴和中点平面的交点定义点“O”。 每个细丝包括终止于“A”点的细丝末端。 显示器的所有灯丝尖端的大部分在点A处的每个灯丝尖端和灯丝轴线处的点O之间具有长度“L”，其中L i =（s + r）/ 2。

公开(公告)号：US5757114A

公开(公告)日：1998-05-26

申请号：US740457

申请日：1996-10-29

Applicant: James E. Jaskie

Inventor： James E. Jaskie

IPC: H01J1/304 ,  H01J1/02

CPC classification number: H01J1/3042 ,  H01J2201/30457

Abstract: An electron emitter formed with a layer of diamond-like carbon having a diamond bond structure with an electrically active defect at an emission site. The electrically active defect acts like a very thin electron emitter with a very low work function and improved current characteristics, including in improved saturation current.