Abstract:
A method of providing interference avoidance in uplink CoMP may include generating an orthogonal frequency division multiplexing (OFDM) symbol for uplink transmission to coordinated multi-point (CoMP) cells, and providing a cyclic-prefix and a cyclic-postfix for the OFDM symbol generated to reduce uplink interference without backhaul transmission for delay or timing advance information. A corresponding apparatus and computer program product are also provided. An alternative method of providing interference avoidance in uplink CoMP may include measuring timing differences between downlink signals received at a mobile terminal in connection with coordinated multi-point (CoMP) transmission from a serving cell and one or more coordinating cells and adjusting uplink transmission timing for signals to be transmitted from the mobile terminal based on the timing differences measured. A corresponding apparatus and computer program product are also provided.
Abstract:
A method for a user equipment to transmit uplink control information to a base station, the base station being configured to receive uplink control information on a plurality of groups of subcarriers. The method includes: randomly determining one of the groups of subcarriers; and transmitting uplink control information on the randomly determined group of subcarriers.
Abstract:
A phase change memory device and fabricating method are provided. A disk-shaped phase change layer is buried within the insulating material. A center via and ring via are formed by a lithography. The center via is located in the center of the phase change layer and passes through the phase change layer, and the ring via takes the center via as a center. A heating electrode within the center via performs Joule heating of the phase change layer, and the contact area between the phase change layer and the heating electrode is reduced by controlling the thickness of the phase change layer. Furthermore, a second electrode within the ring via dissipates the heat transmitted to the contact interface between the phase change layers, so as to avoid transmitting the heat to the etching boundary at the periphery of the phase change layer.
Abstract:
A phase change memory device is provided, including a substrate, a first dielectric layer disposed over the substrate, a first electrode disposed in the first dielectric layer, a second dielectric layer formed over the first dielectric layer, covering the first electrode, a heating electrode disposed in the second dielectric layer, contacting the first electrode, a phase change material layer disposed over the second dielectric layer, contacting the heating electrode, and a second electrode disposed over the phase change material layer. In one embodiment, the heating electrode includes a first portion contacting the first electrode and a second portion contacting the phase change material layer, and the second portion of the heating electrode includes metal silicides and the first portion of the heating electrode includes no metal silicides.
Abstract:
A firmware updating method for use in a mobile device is provided. The method comprises the following steps. First, during a previous downloading procedure or a previous updating procedure, a flag indicating a current status of the previous downloading procedure or the previous updating procedure, and a signature corresponding to the flag are generated and stored in a non-volatile storage device. Next, the flag and the signature are acquired from the non-volatile storage device when booting subsequent to the previous downloading or updating procedure. Next, integrity of the flag is verified by inspecting the signature. Lastly, the updating procedure is performed to update an original firmware with a new firmware when the integrity of the flag is verified and the flag indicates that the previous updating procedure is undergoing or the previous download procedure is completed.
Abstract:
A phase change memory device and fabricating method are provided. A disk-shaped phase change layer is buried within the insulating material. A center via and ring via are formed by a lithography. The center via is located in the center of the phase change layer and passes through the phase change layer, and the ring via takes the center via as a center. A heating electrode within the center via performs Joule heating of the phase change layer, and the contact area between the phase change layer and the heating electrode is reduced by controlling the thickness of the phase change layer. Furthermore, a second electrode within the ring via dissipates the heat transmitted to the contact interface between the phase change layers, so as to avoid transmitting the heat to the etching boundary at the periphery of the phase change layer.
Abstract:
A phase change memory (PCM) cell and fabricating method thereof are provided. A phase change layer is etched into a tapered structure, and then a dielectric layer on the phase change layer is planarized, until a tip of the tapered structure is exposed for contacting a heating electrode. Therefore, when the area of the exposed tip of the phase change layer is controlled to be of an extremely small size, the contact area between the phase change layer and the heating electrode is reduced; thereby the operation current is lowered.
Abstract:
A method of handling a soft buffer of a mobile device in a wireless communication system is disclosed. The mobile device is configured a plurality of component carriers (CCs) by a network of the wireless communication system. The plurality of CCs comprise a primary CC (PCC) and at least one secondary CC (SCC). The method comprises determining a plurality of weightings corresponding to the plurality of CCs according to an indication; determining a plurality of sizes of a plurality of sub-blocks according to the plurality of weightings; and dividing the soft buffer into the plurality of sub-blocks according to the plurality of sizes of the plurality of sub-blocks, to arrange a plurality of hybrid automatic repeat request (HARQ) processes of the plurality of CCs in the plurality of sub-blocks.
Abstract:
A method or manufacturing an integrated circuit structure with a magnetoresistance component is provided. A substrate is provided. A circuit structure layer including a metal pad is formed on the substrate. A dielectric layer is formed on the circuit structure. A metal damascene structure is formed in the dielectric layer. An opening is formed in the dielectric layer so as to form a step-drop. A magnetoresistance material layer is formed on the dielectric layer after forming the metal damascene structure and the opening. A photolithography process is applied to pattern the magnetoresistance material layer to form a magnetoresistance component electrically connected to the metal damascene structure.
Abstract:
A method of handling a soft buffer of a mobile device in a wireless communication system is disclosed. The mobile device is configured a plurality of component carriers (CCs) by a network of the wireless communication system. The plurality of CCs comprise a primary CC (PCC) and at least one secondary CC (SCC). The method comprises determining a plurality of weightings corresponding to the plurality of CCs according to an indication; determining a plurality of sizes of a plurality of sub-blocks according to the plurality of weightings; and dividing the soft buffer into the plurality of sub-blocks according to the plurality of sizes of the plurality of sub-blocks, to arrange a plurality of hybrid automatic repeat request (HARQ) processes of the plurality of CCs in the plurality of sub-blocks.