公开(公告)号：US20120292629A1

公开(公告)日：2012-11-22

申请号：US13112046

申请日：2011-05-20

Applicant: Hsin-Hsien Wu ,  Chyi Shyuan Chern ,  Chun-Lin Chang ,  Ching-Wen Hsiao ,  Kuang-Huan Hsu

Inventor： Hsin-Hsien Wu ,  Chyi Shyuan Chern ,  Chun-Lin Chang ,  Ching-Wen Hsiao ,  Kuang-Huan Hsu

IPC: H01L33/60

CPC classification number: H01L33/22 ,  H01L21/2654 ,  H01L21/26546 ,  H01L21/26593 ,  H01L33/0025 ,  H01L33/06 ,  H01L33/32

Abstract: A method includes providing an LED element including a substrate and a gallium nitride (GaN) layer disposed on the substrate. The GaN layer is treated. The treatment includes performing an ion implantation process on the GaN layer. The ion implantation process may provide a roughened surface region of the GaN layer. In an embodiment, the ion implantation process is performed at a temperature of less than approximately 25 degrees Celsius. In a further embodiment, the substrate is at a temperature less than approximately zero degrees Celsius during the ion implantation process.

Abstract translation: 一种方法包括提供包括衬底和设置在衬底上的氮化镓（GaN）层）的LED元件。 处理GaN层。 该处理包括在GaN层上执行离子注入工艺。 离子注入工艺可以提供GaN层的粗糙化表面区域。 在一个实施例中，离子注入过程在小于约25摄氏度的温度下进行。 在另一个实施例中，在离子注入过程期间，衬底处于低于约零摄氏度的温度。

公开(公告)号：US20100248496A1

公开(公告)日：2010-09-30

申请号：US12409880

申请日：2009-03-24

Applicant: Zin-Chang WEI ,  Hsin-Hsien Wu ,  Chun-Lin Chang

Inventor： Zin-Chang WEI ,  Hsin-Hsien Wu ,  Chun-Lin Chang

IPC: H01L21/46 ,  F27D11/00 ,  C23C16/46

CPC classification number: H01L21/324 ,  F27B17/0025 ,  H01L21/67109

Abstract: A semiconductor furnace suitable for chemical vapor deposition processing of wafers. The furnace includes a thermal reaction chamber having a top, a bottom, a sidewall, and an internal cavity for removably holding a batch of vertically stacked wafers. A heating system is provided that includes a plurality of rotatable heaters arranged and operative to heat the chamber. In one embodiment, spacing between the sidewall heaters is adjustable. The heating system controls temperature variations within the chamber and promotes uniform film deposit thickness on the wafers.

Abstract translation: 适用于晶圆化学气相沉积处理的半导体炉。 该炉包括具有顶部，底部，侧壁和用于可拆卸地保持一批垂直堆叠的晶片的内部空腔的热反应室。 提供了一种加热系统，其包括多个可旋转的加热器，其布置并可操作以加热该腔室。 在一个实施例中，侧壁加热器之间的间隔是可调节的。 加热系统控制室内的温度变化并且促进在晶片上均匀的膜沉积物厚度。