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    SEPARATOR FOR BATTERY AND ALKALI SECONDARY BATTERY USING THE SAME
    32.
    发明公开
    SEPARATOR FOR BATTERY AND ALKALI SECONDARY BATTERY USING THE SAME 失效
    分离器FÜRBATTERIE UND ALKALI-SEKUNDÄRBATTERIEDIE DIESEN VERWENDET

    公开(公告)号：EP0982785A1

    公开(公告)日：2000-03-01

    申请号：EP97918411.6

    申请日：1997-05-12

    Applicant: Japan ,represented by Director General of Agency of Industrial Science and Technology ,  KANAI JUYO KOGYO CO., LTD.

    Inventor： SAKAI, Tetsuo, Osaka Nat. Res. Inst., AIST. ,  UEHARA, Itsuki, Osaka Nat. Res. Inst., AIST. ,  NISHIDA, Masaaki ,  YAMASHITA, Hiroyuki ,  TAMURA, Koichi

    IPC: H01M2/16 ,  H01M10/24

    CPC classification number: H01M2/162 ,  H01M10/30 ,  H01M10/345 ,  H01M2300/0014

    Abstract: A separator for alkaline secondary batteries comprising a porous sheet comprising organic fiber 1, a binder resin 4, and ion-exchange fine powder 3, wherein the ion-exchange fine powder 4 is adhered to the porous sheet with the binder resin 3 that infiltrates and seals the fine voids 2 or slits provided on the surface of the organic fiber 1 of the porous sheet, and wherein the ion-exchange fine powders do not fall out, electrolyte retention is excellent, and ion-exchange performance can be exhibited for a long time; and an alkaline secondary battery using the above-mentioned separator. The surface of the olefin-based finer 1 is provided with fine voids 2 and slits on its surface. The fine voids 2 and slits are formed by etching the olefin-based fiber with an organic solvent. The binder resin 3 is adhered to the porous sheet in a manner in which the binder reins partially infiltrates the fine voids 2 or slits while projecting outwards. On the tip of the projecting part, the ion-exchange fine powder 4 is fixed. As the binder resin 3, styrene―ethylene― butylene―styrene (SEBS) thermoplastic copolymer is preferred.

    Abstract translation: 一种碱性二次电池用隔膜，其特征在于，包括有机纤维1，粘合剂树脂4和离子交换性微细粉末3的多孔质片，其中，所述离子交换性细粉末4与所述多孔片材粘合，所述粘合剂树脂3渗透， 密封多孔片的有机纤维1的表面上的细小空隙2或狭缝，离子交换性细粉末不会脱落，电解质滞留优异，长时间显示离子交换性能 时间; 和使用上述隔板的碱性二次电池。 烯烃系微细体1的表面在其表面上设置有微细的空隙2和狭缝。 通过用有机溶剂蚀刻烯烃系纤维来形成微细空隙2和狭缝。 粘合剂树脂3以向外突出部分地渗透微细空隙2或狭缝的方式粘附到多孔片材上。 在突出部的前端，固定有离子交换用细粉4。 作为粘合剂树脂3，优选苯乙烯 - 乙烯 - 丁烯 - 苯乙烯（SEBS）热塑性共聚物。

    Electron beam resist
    34.
    发明公开
    Electron beam resist 有权
    电子束抗蚀剂

    公开(公告)号：EP0903637A3

    公开(公告)日：1999-07-14

    申请号：EP98307566.4

    申请日：1998-09-17

    Applicant: JAPAN as represented by DIRECTOR GENERAL OF AGENCY OF INDUSTRIAL SCIENCE AND TECHNOLOGY ,  THE UNIVERSITY OF BIRMINGHAM

    Inventor： Kanayama, Toshihiko ,  Tada, Tetsuya ,  Palmer, Richard Edward ,  Robinson, Alexander Phillip Graham

    IPC: G03F7/038

    CPC classification number: G03F7/038 ,  Y10S430/143

    Abstract: A high-resolution patterning method of a resist layer is disclosed by patternwise irradiation of the resist layer with electron beams utilizing a methanofullerene compound as the electron beam resist material, which is graphitized and made insoluble in an organic solvent by the electron beam irradiation in a dose of, for example, 1 × 10 -4 C/cm 2 or larger. The thus formed resist layer is highly resistant against dry etching to ensure utilizability of the method in the fine patterning work for the manufacture of semiconductor devices.

    Abstract translation: 抗蚀剂层的高分辨率图案化方法通过利用电子束利用亚甲基富烯（methanofullerene）化合物对抗蚀剂层进行图案式照射而被公开，该亚甲基富勒烯化合物作为电子束抗蚀剂材料，其通过电子束照射以石墨化并且不溶于有机溶剂 剂量例如为1×10 -4 C / cm 2或更大。 由此形成的抗蚀剂层对干法蚀刻具有高度耐受性，以确保该方法在用于制造半导体器件的精细图案化工作中的可用性。

    Manganese oxide-based single crystal having a laminar structure and method for the preparation thereof
    35.
    发明公开
    Manganese oxide-based single crystal having a laminar structure and method for the preparation thereof 失效
    Mang ung ung ung ung ung ung ung ung ung ung ung ung ung ung ung ung

    公开(公告)号：EP0732430A2

    公开(公告)日：1996-09-18

    申请号：EP96301512.8

    申请日：1996-03-05

    Applicant: JAPAN as represented by DIRECTOR GENERAL OF AGENCY OF INDUSTRIAL SCIENCE AND TECHNOLOGY ,  ANGSTROM TECHNOLOGY PARTNERSHIP

    Inventor： Moritomo, Yutaka ,  Asamitsu, Atsushi ,  Kuwahara, Hideki ,  Tokura, Yoshinori

    IPC: C30B29/22 ,  C30B13/00

    CPC classification number: C30B29/22 ,  C30B13/00

    Abstract: A manganese-based composite oxide single crystal of the chemical composition (LaxSr 1-x ) y + 1 Mn y 0 3y+1 , in which the subscript x is a number in the range from 0.3 to 0.5 and the subscript y is a number substantially equal to 1 or 2, having, differing from a conventional perovskite structure, a single-layered or double-layered laminar structure, respectively, exhibits a very unique magnetic resistance behavior so that it is promising as an element in a memory switching magnetic resistance device. The single crystals can be prepared from the oxides of respective elements by reacting and sintering a powder blend of an exact blending proportion into a sintered body which is subjected to the process of single crystal growing by the method of floating zone melting.

    Abstract translation: 化学成分（LaxSr1-x）y + 1Mny03y + 1的锰系复合氧化物单晶，其中下标x为0.3〜0.5的数，下标y为数大致等于1或 如图2所示，具有与常规钙钛矿结构不同的单层或双层层状结构分别具有非常独特的磁阻行为，因此作为存储器开关磁阻器件中的元件是有希望的。 可以通过将精确配合比例的粉末混合物通过浮区熔化的方法进行单晶生长处理的烧结体反应并烧结，从各元素的氧化物制备单晶。

    Synthetic mixed-layer silicate and methods for the preparation thereof
    37.
    发明公开
    Synthetic mixed-layer silicate and methods for the preparation thereof 失效
    合成的混合层硅酸盐和其制备方法

    公开(公告)号：EP0698578A3

    公开(公告)日：1996-05-08

    申请号：EP95305794.0

    申请日：1995-08-18

    Applicant: JAPAN as represented by DIRECTOR GENERAL OF AGENCY OF INDUSTRIAL SCIENCE AND TECHNOLOGY

    Inventor： Torii, Kazuo ,  Iwasaki, Takashi ,  Onodera, Yoshio

    IPC: C01B33/38

    CPC classification number: C01B33/40 ,  B01J21/16

    Abstract: A novel synthetic mixed-layer silicate consisting of layers of serpentine and layers of saponite each having a specified chemical composition has excellent dispersibility in water to form colloidal dispersions capable of being converted into gels by standing so as to be useful as a gelating agent exhibiting thixotropy along with unique porosity characteristics which enable use as an adsorbent. The mixed-layer silicate is prepared by a process comprising the steps of: (a) preparing an acidic aqueous solution containing silicic acid, magnesium salt and aluminum salt; (b) alkalifying the solution by the addition of an alkaline compound to precipitate a hydrous composite oxide containing silicon, magnesium and aluminum; (c) collecting the precipitates of the hydrous composite oxide; (d) admixing the precipitates of the hydrous composite oxide with an aqueous solution of an alkali metal hydroxide to give an aqueous slurry; and (e) subjecting the aqueous slurry of the hydrous composite oxide to a hydrothermal treatment by heating at a temperature up to 500 °C.

    Field emission type electron emitting device and method of producing the same
    38.
    发明公开
    Field emission type electron emitting device and method of producing the same 失效
    未经授权的发电机组发电机组和发电机组

    公开(公告)号：EP0696814A1

    公开(公告)日：1996-02-14

    申请号：EP95112464.3

    申请日：1995-08-08

    Applicant: FUJI ELECTRIC CO., LTD. ,  Director-General of Agency of Industrial Science and Technology, Jiro Hiraishi

    Inventor： Itoh, Junji ,  Uematsu, Takihiko, Fuji Electric Co., Ltd. ,  Ryokai, Yoichi, Fuji Electric Co., Ltd. ,  Nishizawa, Masato, Fuji Electric Co., Ltd. ,  Matsuzaki, Kazuo, Fuji Electric Co., Ltd.

    IPC: H01J3/02 ,  H01J9/02

    CPC classification number: H01J9/025 ,  H01J3/022

    Abstract: In a comb-like or wedge-like electron emitting device, an emitter or both an emitter and an anode electrode are processed from a single-crystal silicon thin film of an SOI wafer. The single-crystal silicon thin film in portions other than the processed portion is removed so that the silicon oxide layer is dug down further slightly. A gate electrode for applying an electric field in order to draw electrons out of the emitter is provided in the dug-down portion. When the end and side faces of the emitter are formed as (111) faces by anisotropic etching in the condition that the single-crystal silicon thin film is oriented to a (100) face, the emitter has a sharp edge at about 55° with respect to the substrate. In a conical electron emitting device, the gate electrode is constituted by a single-crystal silicon thin film of an SOI wafer so that a pyramid surrounded by the (111) faces is formed on the single-crystal silicon substrate.

    Abstract translation: 在梳状或楔形电子发射器件中，从SOI晶片的单晶硅薄膜处理发射极或发射极和阳极两者。 去除处理部分以外的部分中的单晶硅薄膜，使得氧化硅层进一步略微下降。 用于施加电场以便将电子从发射极引出的栅电极设置在所述挖空部分中。 当在单晶硅薄膜取向为（100）面的条件下，通过各向异性蚀刻将发射极的端面和侧面形成为（111）面时，发射极在约55°处具有尖锐边缘， 相对于底物。 在锥形电子发射器件中，栅电极由SOI晶片的单晶硅薄膜构成，以便在单晶硅衬底上形成由（111）面包围的金字塔。

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