公开(公告)号：US20120312835A1

公开(公告)日：2012-12-13

申请号：US13581267

申请日：2011-02-28

Applicant: Jin Hwan Cha ,  Won Joon Lee ,  Dong Sik Lee

Inventor： Jin Hwan Cha ,  Won Joon Lee ,  Dong Sik Lee

IPC: G07F19/00 ,  B65H3/66

CPC classification number: G07D11/0012 ,  B65H1/025 ,  B65H1/027 ,  B65H83/025 ,  B65H2402/45 ,  B65H2402/64 ,  B65H2403/41 ,  B65H2405/325 ,  B65H2405/332 ,  B65H2407/33 ,  B65H2601/255 ,  B65H2701/1912 ,  G07F19/201

Abstract: A cassette for an automatic teller machine (ATM) is provided, which is capable of returning a paper medium disposed at an entrance of the cassette into the cassette using a moving force of a shutter that closes the entrance, during separation of the cassette from a cassette receiving portion.

Abstract translation: 提供了一种用于自动提款机（ATM）的盒子，其能够使盒子入口处的纸介质在将盒子从 盒接收部分。

公开(公告)号：US20120122297A1

公开(公告)日：2012-05-17

申请号：US13198157

申请日：2011-08-04

Applicant: Jong-Hoon NA ,  Young-Woo Park ,  Dong-Hwa Kwak ,  Tae-Yong Kim ,  Jee-Hoon Han ,  Jang-Hyun You ,  Dong-Sik Lee ,  Su-Jin Park

Inventor： Jong-Hoon NA ,  Young-Woo Park ,  Dong-Hwa Kwak ,  Tae-Yong Kim ,  Jee-Hoon Han ,  Jang-Hyun You ,  Dong-Sik Lee ,  Su-Jin Park

IPC: H01L21/762

CPC classification number: H01L27/0207 ,  H01L21/28273 ,  H01L27/11 ,  H01L27/11519 ,  H01L27/11524

Abstract: A method of fabricating a nonvolatile memory device includes providing a substrate having active regions defined by a plurality of trenches, forming a first isolation layer on the substrate having the plurality of trenches, forming a sacrificial layer on the first isolation layer to fill the trenches, the sacrificial layer including a first region filling lower portions of the trenches and a second region filling portions other than the lower portions, removing the second region of the sacrificial layer, forming a second isolation layer on the first isolation layer and the first region of the sacrificial layer, forming air gaps in the trenches by removing the first region of the sacrificial layer, and removing a portion of the first isolation layer and a portion of the second isolation layer while maintaining the air gaps.

Abstract translation: 一种制造非易失性存储器件的方法包括提供具有由多个沟槽限定的有源区的衬底，在具有多个沟槽的衬底上形成第一隔离层，在第一隔离层上形成牺牲层以填充沟槽， 所述牺牲层包括填充所述沟槽的下部的第一区域和除所述下部以外的第二区域填充部分，去除所述牺牲层的所述第二区域，在所述第一隔离层上形成第二隔离层和在所述第一隔离层的所述第一区域 牺牲层，通过去除牺牲层的第一区域在沟槽中形成气隙，以及在保持气隙的同时去除第一隔离层的一部分和第二隔离层的一部分。

公开(公告)号：US20110155696A1

公开(公告)日：2011-06-30

申请号：US12980160

申请日：2010-12-28

Applicant: Dong Sik LEE

Inventor： Dong Sik LEE

IPC: H01H33/666

CPC classification number: H01H33/022 ,  H01H3/46 ,  H01H33/666 ,  H01H2033/6667

Abstract: Disclosed is a vacuum circuit breaker. A rotation link provided between a rotation shaft which transfers a rotation force of a driving force, and a moveable link which performs a linear motion by a rotation force of the rotation shaft is configured to receive a tensile force to be pulled to a direction of the rotation shaft when a driving unit performs a closing operation. This may prevent the moveable link from being buckled during a closing operation, and thus prevent lowering of the reliability due to deformation of sliding levers.

Abstract translation: 公开了一种真空断路器。 设置在传递驱动力的旋转力的旋转轴与通过旋转轴的旋转力进行直线运动的可动连杆之间的旋转连杆被构造成接收拉伸到 旋转轴，当驱动单元执行关闭操作时。 这可以防止可动连杆在关闭操作期间被弯曲，并且因此防止由于滑动杆的变形而导致的可靠性降低。

公开(公告)号：US07950572B2

公开(公告)日：2011-05-31

申请号：US11967419

申请日：2007-12-31

Applicant: Dong Sik Lee ,  Won Joon Lee ,  Joong Hyuk Han

Inventor： Dong Sik Lee ,  Won Joon Lee ,  Joong Hyuk Han

IPC: G07D11/00

CPC classification number: G07D11/0003

Abstract: A reject structure in a cash transaction machine includes a main body of the cash transaction machine including a receiving section wherein a fixed magnet is included in the receiving section; a reject box body being detachably disposed in the receiving section; a reject box shutter being provided on the reject box body to open and close a reject box; and a locking member including a movable magnet in one end of the locking member and being provided pivotably toward a first location capable of locking the reject box shutter and a second location capable of releasing the reject box shutter inside the reject box body, wherein when the reject box body is disposed in the receiving section, the locking member is pivoted toward the location capable of releasing the reject box shutter due to a magnetic force between the fixed magnet and the movable magnet.

Abstract translation: 现金交易机器中的拒收结构包括：现金交易机的主体，包括接收部分，其中固定磁体包括在接收部分中; 拒收箱主体，其可拆卸地设置在所述接收部中; 在所述拒收箱主体上设置拒收箱挡板以打开和关闭拒收箱; 以及锁定构件，其在所述锁定构件的一端中包括可移动磁体，并且可枢转地设置成朝向能够锁定所述拒收箱挡板的第一位置，以及能够将所述拒收箱挡板释放在所述拒收箱体内部的第二位置，其中，当 拒收箱体设置在接收部分中，锁定构件由于固定磁体和可动磁体之间的磁力而枢转到能够释放拒绝箱挡板的位置。

公开(公告)号：US07926639B2

公开(公告)日：2011-04-19

申请号：US11967476

申请日：2007-12-31

Applicant: Sung Jin Moon ,  Won Joon Lee ,  Dong Sik Lee

Inventor： Sung Jin Moon ,  Won Joon Lee ,  Dong Sik Lee

IPC: G07F1/00

CPC classification number: G07D11/0018

Abstract: A cash transaction machine that can prevent paper media from not being collected due to the wind is provided. The cash transaction machine may provide a mold guide to a dispensing device and provide a bracket to a housing, in order to prevent the paper media from moving backward into the dispensing device due to the strong wind blowing from the outside. Since the mold guide and the bracket are overlappingly coupled with each other, it is possible to prevent the paper media from moving backward into the dispensing device due to the strong wind.

Abstract translation: 提供了可以防止由于风而不收集纸介质的现金交易机。 现金交易机器可以向分配装置提供模具引导件并且向壳体提供托架，以便由于来自外部的强风而防止纸张介质向后移动到分配装置中。 由于模具引导件和支架彼此重叠地联接，所以可以防止纸介质由于强风而向后移动到分配装置中。

公开(公告)号：US20090305495A1

公开(公告)日：2009-12-10

申请号：US12465013

申请日：2009-05-13

Applicant: Young-Ho Lee ,  Jae-Hwang Sim ,  Jae-Kwan Park ,  Mo-Seok Kim ,  Jong-Min Lee ,  Dong-Sik Lee

Inventor： Young-Ho Lee ,  Jae-Hwang Sim ,  Jae-Kwan Park ,  Mo-Seok Kim ,  Jong-Min Lee ,  Dong-Sik Lee

IPC: H01L21/768

CPC classification number: H01L21/76816 ,  H01L21/31144

Abstract: A semiconductor device may include plugs disposed in a zigzag pattern, interconnections electrically connected to the plugs and a protection pattern which is interposed between the plugs and the interconnections to selectively expose the plugs. The interconnections may include a connection portion which is in contact with plugs selectively exposed by the protection pattern. A method of manufacturing a semiconductor device includes, after forming a molding pattern and a mask pattern, selectively etching a protection layer using the mask pattern to form a protection pattern exposing a plug.

Abstract translation: 半导体器件可以包括以锯齿形图案布置的插塞，电连接到插头的互连和插入在插头和互连之间的保护图案以选择性地暴露插头。 互连可以包括与由保护图案选择性地暴露的插头接触的连接部分。 制造半导体器件的方法包括：在形成模制图案和掩模图案之后，使用掩模图案选择性地蚀刻保护层以形成露出插头的保护图案。

公开(公告)号：US20170104068A1

公开(公告)日：2017-04-13

申请号：US15251510

申请日：2016-08-30

Applicant: DONG-SIK LEE ,  YOUNGWOO KIM ,  JINHYUN SHIN ,  JUNG HOON LEE

Inventor： DONG-SIK LEE ,  YOUNGWOO KIM ,  JINHYUN SHIN ,  JUNG HOON LEE

IPC: H01L29/10 ,  G11C16/08 ,  H01L23/528 ,  H01L29/423 ,  H01L27/115 ,  H01L23/522

CPC classification number: H01L27/11551 ,  H01L21/26506 ,  H01L21/28158 ,  H01L21/823462 ,  H01L27/10897 ,  H01L27/1104 ,  H01L27/1116 ,  H01L27/11246 ,  H01L27/115 ,  H01L27/11529 ,  H01L27/11531 ,  H01L27/11556 ,  H01L27/11573 ,  H01L27/11578 ,  H01L27/11582 ,  H01L27/11597 ,  H01L28/00 ,  H01L29/1083 ,  H01L29/42368

Abstract: A vertically integrated circuit device can include a substrate having a first region reserved for first functional circuits of the vertically integrated circuit device, where the first functional circuits has a substantially constant top surface level across the first region and having a second region reserved for second functional circuits of the vertically integrated circuit device and spaced apart from the first region. The second functional circuits can have a varied top surface level across the second region. A doped oxidation suppressing material can be included in the substrate and can extend from the first region to the second region at an interface of the substrate with the first functional circuits and the second functional circuits, respectively.

公开(公告)号：US09330913B2

公开(公告)日：2016-05-03

申请号：US12912744

申请日：2010-10-27

Applicant: Jang-Hyun You ,  Jong-Min Lee ,  Dong-Hwa Kwak ,  Tae-Yong Kim ,  Jong-Hoon Na ,  Young-Woo Park ,  Dong-Sik Lee ,  Jee-Hoon Han

Inventor： Jang-Hyun You ,  Jong-Min Lee ,  Dong-Hwa Kwak ,  Tae-Yong Kim ,  Jong-Hoon Na ,  Young-Woo Park ,  Dong-Sik Lee ,  Jee-Hoon Han

IPC: H01L29/40 ,  H01L21/033 ,  H01L21/28 ,  H01L21/308 ,  H01L21/3213 ,  H01L21/762 ,  H01L27/115 ,  H01L29/66

CPC classification number: H01L21/0337 ,  H01L21/28273 ,  H01L21/3086 ,  H01L21/32139 ,  H01L21/76229 ,  H01L27/11521 ,  H01L27/11536 ,  H01L29/66825

Abstract: A semiconductor device includes first, second, and third conductive lines, each with a respective line portion formed over a substrate and extending in a first direction and with a respective branch portion extending from an end of the respective line portion in a direction different from the first direction. The branch portion of a middle conductive line is disposed between and shorter than the respective branch portions of the outer conductive lines such that contact pads may be formed integral with such branch portions of the conductive lines.

Abstract translation: 半导体器件包括第一，第二和第三导线，每个导线具有形成在衬底上并且沿第一方向延伸的相应的线部分，并且具有相应的分支部分，该分支部分从相应线部分的端部沿与 第一个方向 中间导线的分支部分设置在外导电线的相应分支部分之间并且短于接触焊盘可以与导电线的这种分支部分一体形成。

公开(公告)号：US08748286B2

公开(公告)日：2014-06-10

申请号：US13198157

申请日：2011-08-04

Applicant: Jong-Hoon Na ,  Young-Woo Park ,  Dong-Hwa Kwak ,  Tae-Yong Kim ,  Jee-Hoon Han ,  Jang-Hyun You ,  Dong-Sik Lee ,  Su-Jin Park

Inventor： Jong-Hoon Na ,  Young-Woo Park ,  Dong-Hwa Kwak ,  Tae-Yong Kim ,  Jee-Hoon Han ,  Jang-Hyun You ,  Dong-Sik Lee ,  Su-Jin Park

IPC: H01L21/76 ,  H01L29/00

CPC classification number: H01L27/0207 ,  H01L21/28273 ,  H01L27/11 ,  H01L27/11519 ,  H01L27/11524

Abstract: A method of fabricating a nonvolatile memory device includes providing a substrate having active regions defined by a plurality of trenches, forming a first isolation layer on the substrate having the plurality of trenches, forming a sacrificial layer on the first isolation layer to fill the trenches, the sacrificial layer including a first region filling lower portions of the trenches and a second region filling portions other than the lower portions, removing the second region of the sacrificial layer, forming a second isolation layer on the first isolation layer and the first region of the sacrificial layer, forming air gaps in the trenches by removing the first region of the sacrificial layer, and removing a portion of the first isolation layer and a portion of the second isolation layer while maintaining the air gaps.

Abstract translation: 一种制造非易失性存储器件的方法包括提供具有由多个沟槽限定的有源区的衬底，在具有多个沟槽的衬底上形成第一隔离层，在第一隔离层上形成牺牲层以填充沟槽， 所述牺牲层包括填充所述沟槽的下部的第一区域和除所述下部以外的第二区域填充部分，去除所述牺牲层的所述第二区域，在所述第一隔离层上形成第二隔离层和在所述第一隔离层的所述第一区域 牺牲层，通过去除牺牲层的第一区域在沟槽中形成气隙，以及在保持气隙的同时去除第一隔离层的一部分和第二隔离层的一部分。

公开(公告)号：US20130252391A1

公开(公告)日：2013-09-26

申请号：US13896819

申请日：2013-05-17

Applicant: Jae-goo Lee ,  Young-woo Park ,  Byung-kwan You ,  Dong-sik Lee ,  Sang-yong Park

Inventor： Jae-goo Lee ,  Young-woo Park ,  Byung-kwan You ,  Dong-sik Lee ,  Sang-yong Park

IPC: H01L29/66

CPC classification number: H01L27/11582 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11578 ,  H01L29/66477 ,  H01L29/7926

Abstract: A nonvolatile memory device includes a substrate, a channel layer protruding from the substrate, a gate conductive layer surrounding the channel layer, a gate insulating layer disposed between the channel layer and the gate conductive layer, and a first insulating layer spaced apart from the channel layer and disposed on the top and bottom of the gate conductive layer. The gate insulating layer extends between the gate conductive layer and the first insulating layer.