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31.发明专利Temperature-compensated scintillation detector, temperature compensation circuit and method 审中-公开温度补偿型扫描检测器，温度补偿电路及方法
公开(公告)号：JP2008102159A
公开(公告)日：2008-05-01
申请号：JP2008008445
申请日：2008-01-17
Inventor： ROZSA CSABA M
CPC classification number: G01T1/202
Abstract: PROBLEM TO BE SOLVED: To provide a circuit and a method, for temperature compensation of a temperature-dependent component of a scintillation detector for improving temperature compensation performance of the detector.
SOLUTION: This scintillation detector wherein sensitivity to temperature is reduced has two circuits for the temperature compensation. The two circuits can be a circuit comprising both of a resistance element and a switching element, and a circuit comprising a thermistor connected thereto in parallel. The switching element can be a diverse element including a zener diode, a Schottky barrier diode, or an MIM (metal-insulator-metal). The circuits for the temperature compensation are included in a circuit of a photodetector such as a photomultiplier.
COPYRIGHT: (C)2008,JPO&INPITAbstract translation: 要解决的问题：提供一种用于温度补偿用于改善检测器的温度补偿性能的闪烁检测器的温度依赖性部件的电路和方法。 解决方案：该温度敏感度降低的闪烁检测器具有用于温度补偿的两个电路。 两个电路可以是包括电阻元件和开关元件的电路，以及包括并联连接到其上的热敏电阻的电路。 开关元件可以是包括齐纳二极管，肖特基势垒二极管或MIM（金属 - 绝缘体 - 金属））的多种元件。 用于温度补偿的电路包括在诸如光电倍增管的光电检测器的电路中。 版权所有（C）2008，JPO＆INPIT
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公开(公告)号：JP2014221512A
公开(公告)日：2014-11-27
申请号：JP2014178498
申请日：2014-09-02
Applicant: サン−ゴバン セラミックス アンド プラスティクス,インコーポレイティド , Saint-Gobain Ceramics & Plastics Inc , サン−ゴバン セラミックス アンド プラスティクス,インコーポレイティド
Inventor： DORUK O YENER , ALAN J BRANDES , RALPH BAUER
IPC: B24D3/00
CPC classification number: C09K3/1436 , B24D11/00 , C23C16/401
Abstract: 【課題】機械的な安定性、化学的な安定性、及び研削性能が高い塗布研磨剤粒子を利用した固定研磨剤製品の提供。【解決手段】固定研磨材製品であって、マトリックス材料と、多結晶αアルミナコアと、多結晶αアルミナコアに重層し、且つ酸化ケイ素及び酸化ジルコニウムからなる群から選択される多結晶材料を含むシェル層とを含むコア−シェル構造を有する、マトリックス材料に埋め込まれた研磨粒子であって、多結晶αアルミナコアが500nm以下の平均粒径の結晶粒を含む、研磨粒子と、を含む、固定研磨材製品。【選択図】図1
Abstract translation: 要解决的问题：提供使用具有高机械稳定性，化学稳定性和抛光性能的涂层抛光材料颗粒的固定研磨材料产品。解决方案：固定的抛光材料产品具有包含基质材料的核 - 壳结构; 多晶α-氧化铝核; 以及与多晶α-氧化铝芯重叠的壳层，并且包括选自氧化硅和氧化锆的多晶材料。 固定的研磨材料产品还具有嵌入到基体材料中的研磨粒子，多晶α-氧化铝核心包括平均粒径为500nm以下的晶粒。
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公开(公告)号：JP2013082625A
公开(公告)日：2013-05-09
申请号：JP2013011560
申请日：2013-01-24
Inventor： HAERLE ANDREW G , PERRY EDWARD A
IPC: C04B35/565
CPC classification number: C04B35/565 , C04B2235/3821 , C04B2235/3826 , C04B2235/421 , C04B2235/5436 , C04B2235/5472 , C04B2235/656 , C04B2235/72 , C04B2235/722 , C04B2235/77 , C04B2235/96 , C04B2235/9607
Abstract: PROBLEM TO BE SOLVED: To provide a method for producing a recrystallized silicon carbide body having resistivity of not less than about 1E5 Ωcm and nitrogen atoms of not greater than about 200 ppm.SOLUTION: The method includes steps of: forming a mixture by combining coarse silicon carbide particles and fine silicon carbide particles having an average particle size less than the average particle size of the coarse silicon carbide particles; forming the mixture to form a green article; and heating the green article to a sublimation temperature in an atmosphere comprising an inert gas and having a reduced pressure of not greater than about 25 Torr to form the recrystallized silicon carbide body.
Abstract translation: 要解决的问题：提供一种制造电阻率不小于约1E5Ωcm，氮原子不大于约200ppm的再结晶碳化硅体的方法。 该方法包括以下步骤：通过将粗碳化硅颗粒和平均粒度小于粗碳化硅颗粒的平均粒径的细碳化硅颗粒结合来形成混合物; 形成混合物以形成绿色制品; 并在包含惰性气体的气氛中并且具有不大于约25乇的减压的气氛下将生坯加热到升华温度，以形成再结晶的碳化硅体。 版权所有（C）2013，JPO＆INPIT
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公开(公告)号：JP2012250344A
公开(公告)日：2012-12-20
申请号：JP2012185056
申请日：2012-08-24
Inventor： TANIKELLA BRAHMANANDAM V , SIMPSON MATTHEW A , CHINNAKARUPPAN PALANIAPPAN , RIZZUTO ROBERT A , CHERIAN ISAAC K , VEDANTHAM RAMANUJAM
CPC classification number: C30B29/20
Abstract: PROBLEM TO BE SOLVED: To provide a sapphire substrate that has a larger size than that of a conventional substrate and is of high quality.SOLUTION: The sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0.037 μm/cm, wherein nTTV is total thickness variation normalized for surface area of the generally planar surface, the substrate having a diameter not less than about 9.0 cm.
Abstract translation: 要解决的问题：提供具有比常规基板大的尺寸的蓝宝石基板，并且具有高质量。 解决方案：蓝宝石衬底包括大致平坦的表面，其具有选自由a面，r面，m面和c面取向组成的组的结晶取向，并且具有不大于约的nTTV 0.037μm/ cm 2，其中nTTV是对于大致平坦的表面的表面积进行标准化的总厚度变化，基底的直径不小于约9.0cm。 版权所有（C）2013，JPO＆INPIT
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35.发明专利
公开(公告)号：JP2012148971A
公开(公告)日：2012-08-09
申请号：JP2012058711
申请日：2012-03-15
Inventor： CITTI OLIVIER , WILLIAMS JAMES A A , MCGARRY CHARLES N
CPC classification number: C04B35/457 , C03B5/027 , C04B2235/3281 , C04B2235/3284 , C04B2235/3294 , C04B2235/656 , C04B2235/77 , C04B2235/96 , C04B2235/9669 , H05B3/03
Abstract: PROBLEM TO BE SOLVED: To provide an electrode with improved electrical properties for glass melting.SOLUTION: A tin oxide-based electrode formed from a composition comprising a major component SnOis disclosed. The composition includes additives including aCuO, bZnO, and cSbO, wherein a, b, and c represent weight percentages of respective components, and 0.2≤(a+b)/c
Abstract translation: 要解决的问题：提供具有改善的玻璃熔化电性能的电极。 解决方案：公开了由包含主要组分SnO
2 的组合物形成的氧化锡基电极。 该组合物包括添加剂，其中a，b，c表示重量百分比，其中a，b，c，b，c， 0.2≤（a + b）/ c <1.0。 版权所有（C）2012，JPO＆INPIT -
Patent Agency Ranking
公开(公告)号：JP2012072408A
公开(公告)日：2012-04-12
申请号：JP2011235846
申请日：2011-10-27
Inventor： BAUER RALPH , YENER DORUK
IPC: C08L101/00 , C08K3/00 , C08K3/22 , C08K7/04
CPC classification number: C08K3/22 , C01F7/02 , C01F7/448 , C01P2004/10 , C01P2004/20 , C01P2004/45 , C01P2004/62 , C01P2006/12 , C08K7/08 , C08K2201/016 , C09K21/02 , C08L101/00
Abstract: PROBLEM TO BE SOLVED: To provide flame retardant polymer composites.SOLUTION: The composite includes a polymer base material and a flame retardant filler provided in the polymer base material, the flame retardant filler containing seeded boehmite particulate material having an aspect ratio of not less than 3:1.
Abstract translation: 要解决的问题：提供阻燃聚合物复合材料。 解决方案：复合材料包括聚合物基体材料和设置在聚合物基材中的阻燃填料，阻燃剂填料含有长宽比不小于3:1的接枝的勃姆石颗粒材料。 版权所有（C）2012，JPO＆INPIT
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公开(公告)号：JP2010229030A
公开(公告)日：2010-10-14
申请号：JP2010141971
申请日：2010-06-22
Inventor： LOCHER JOHN WALTER , ZANELLA STEVEN ANTHONY , MACLEAN RALPH LAMPSON JR , BATES HERBERT ELLSWORTH
CPC classification number: C30B15/30 , C30B15/34 , C30B29/20 , Y10T117/1044 , Y10T428/2495 , Y10T428/26
Abstract: PROBLEM TO BE SOLVED: To provide various single crystals including sapphire. Ž SOLUTION: The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than about 0.5 cm. The single crystal may also have other features, such as maximum thickness variation, as-formed crystals may have a generally symmetrical neck portion, particularly related to the transition from the neck to the body of the crystal. Methods for forming such crystals and an apparatus for carrying out the methods are disclosed as well. Ž COPYRIGHT: (C)2011,JPO&INPIT Ž
Abstract translation: 要解决的问题：提供包括蓝宝石在内的各种单晶。 解决方案：单晶具有期望的几何性质，包括宽度不小于约15cm，厚度不小于约0.5cm。 单晶还可以具有其它特征，例如最大厚度变化，形成的晶体可以具有大致对称的颈部，特别是与从晶体的颈部到晶体的转变相关。 还公开了形成这种晶体的方法和实施方法的装置。 版权所有（C）2011，JPO＆INPITŽ
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38.发明专利Method for treating semiconductor processing component and component formed by the same 有权用于处理由其形成的半导体加工组件和组分的方法
公开(公告)号：JP2010219535A
公开(公告)日：2010-09-30
申请号：JP2010058192
申请日：2010-03-15
Inventor： NARENDAR YESHWANTH , BUCKLEY RICHARD F , HAERLE ANDREW G , HENGST RICHARD R
IPC: H01L21/22 , C01B31/36 , C04B35/565 , C04B35/622 , C04B41/45 , C04B41/80 , C23C16/42 , H01L21/02 , H01L21/205 , H01L21/265 , H01L21/324 , H01L21/673 , H01L21/683
CPC classification number: C04B41/459 , C01B32/956 , C01P2006/80 , C04B35/565 , C04B35/62222 , C04B41/009 , C04B41/80 , C04B2235/3826 , C04B2235/428 , C04B2235/72 , C04B2235/80 , C04B2235/963 , H01L21/6733 , Y10T428/12576 , Y10T428/26 , C04B41/4519 , C04B41/4556 , C04B41/5035
Abstract: PROBLEM TO BE SOLVED: To provide various semiconductor processing components, and a method for forming the same. SOLUTION: This semiconductor processing component is formed of SiC, and an outer surface portion of the semiconductor processing component has a surface impurity level that is not greater than 10 times an internal impurity level. This method for treating a semiconductor processing component includes exposing the semiconductor processing component to a halogen gas at an elevated temperature, oxidizing the semiconductor processing component to form an oxide layer, and removing the oxide layer. COPYRIGHT: (C)2010,JPO&INPIT
Abstract translation: 要解决的问题：提供各种半导体处理部件及其形成方法。 解决方案：该半导体处理部件由SiC形成，并且半导体处理部件的外表面部分具有不大于内部杂质水平的10倍的表面杂质水平。 用于处理半导体处理部件的方法包括：将高温下的半导体处理部件暴露于卤素气体，氧化半导体处理部件，形成氧化物层，除去氧化物层。 版权所有（C）2010，JPO＆INPIT
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公开(公告)号：JP2010103554A
公开(公告)日：2010-05-06
申请号：JP2009295992
申请日：2009-12-25
Inventor： BUCKLEY RICHARD F , HAERLE ANDREW G , CHANG HAN C
IPC: H01L21/673
CPC classification number: H01L21/67326
Abstract: PROBLEM TO BE SOLVED: To provide a wafer carrier which is suitable for improved processing operations that provide improved device yield and low defectivity. SOLUTION: The wafer carrier 1 for supporting a plurality of wafers vertically includes at least first, second, and third support members 10, 12 and 14, and a plurality of slots 16 for receiving the plurality of wafers. The first, the second, and the third support members 10, 12 and 14 are provided so as to support and contact the wafers, and each slot is made up of first, second and third slot segments 18, 20 and 22, respectively, each of which respectively being extended along the first, the second and the third support members 10, 12, and 14. A cradle 2 is comprised of silicon carbide and has an oxide layer covering the silicon carbide. COPYRIGHT: (C)2010,JPO&INPIT
Abstract translation: 要解决的问题：提供一种适用于提高设备产量和低缺陷性的改进处理操作的晶片载体。 解决方案：用于支撑多个晶片的晶片载体1垂直地包括至少第一，第二和第三支撑构件10,12和14以及用于容纳多个晶片的多个狭槽16。 第一，第二和第三支撑构件10,12和14设置成支撑和接触晶片，并且每个槽分别由第一，第二和第三槽段18,20和22组成，每个 其分别沿着第一，第二和第三支撑构件10,12和14延伸。支架2由碳化硅构成，并且具有覆盖碳化硅的氧化物层。 版权所有（C）2010，JPO＆INPIT
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公开(公告)号：JP2009072787A
公开(公告)日：2009-04-09
申请号：JP2008326255
申请日：2008-12-22
Inventor： SZYMANSKI THOMAS , REMUS DONALD J , LOCKEMEYER JOHN R , YEATES RANDALL CLAYTON , GERDES WILLIAM H
IPC: B01J21/12 , C07D303/04 , B01J21/04 , B01J23/66 , B01J32/00 , B01J35/10 , B01J37/00 , B01J37/08 , C01F7/02 , C07D301/08 , C07D301/10
CPC classification number: B01J37/0018 , B01J21/04 , B01J21/12 , B01J23/66 , B01J35/10 , B01J35/1009 , B01J35/1038 , B01J35/1042 , B01J35/108 , C01F7/02 , C01P2006/12 , C01P2006/14 , C01P2006/16 , C01P2006/17 , C01P2006/90 , C07D301/10
Abstract: PROBLEM TO BE SOLVED: To provide a catalyst carrier useful in epoxidation of olefins. SOLUTION: It has been found that the selectivity and the activity of a silver catalyst for epoxidation of olefins are a function of the distribution of the pore diameter of an alumina carrier on which the catalyst is deposited. It has been also found that a carrier having a water absorption coefficient of 35 to 55%, a surface area of at least 1.0 m 2 /g and a minimum number of pores of very large size (larger than 10 μm) is especially advantageous. A production method for such catalysts is also disclosed. COPYRIGHT: (C)2009,JPO&INPIT
Abstract translation: 待解决的问题：提供可用于烯烃环氧化的催化剂载体。 解决方案：已经发现，用于烯烃环氧化的银催化剂的选择性和活性是催化剂沉积在其上的氧化铝载体的孔径分布的函数。 还发现吸水系数为35〜55％，表面积为1.0m 2 / SP / g以上的载体和尺寸非常大的最小孔数（大于 10μm）是特别有利的。 还公开了这种催化剂的制备方法。 版权所有（C）2009，JPO＆INPIT
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