公开(公告)号：WO02059952A3

公开(公告)日：2003-10-16

申请号：PCT/GB0200292

申请日：2002-01-23

Applicant: UNIV GLASGOW ,  HAMILTON CRAIG JAMES ,  KOWALSKI OLEK PETER ,  MARSH JOHN HAIG ,  MCDOUGALL STEWART DUNCAN

Inventor： HAMILTON CRAIG JAMES ,  KOWALSKI OLEK PETER ,  MARSH JOHN HAIG ,  MCDOUGALL STEWART DUNCAN

IPC: H01S5/343 ,  H01L25/00 ,  H01S5/026 ,  H01S5/34 ,  H01L21/18 ,  H01L33/00

CPC classification number: B82Y20/00 ,  H01S5/026 ,  H01S5/0265 ,  H01S5/3413 ,  H01S5/3414

Abstract: There is disclosed a method of manufacturing of optical devices, for example, semiconductor optoelectronic devices such as laser diodes, optical modulators, optical amplifiers, optical switches, and the like. There is further disclosed Optoelectronic Integrated Circuits (OEICs) and Photonic Integrated Circuits (PICs) including such devices. According to the present invention there is provided a method of manufacturing an optical device (40), a device body portion (15) from which the device (40) is to be made including a Quantum Well Intermixing (QWI) structure (30), the method including the step of plasma etching at least part of a surface of the device body portion (5) prior to depositing a dielectric layer (51) thereon so as to introduce structural defects at least into a portion (53) of the device body portion (5) adjacent the dielectric layer (51). The structural defects substantially comprise "point" defects.

Abstract translation: 公开了一种制造光学器件的方法，例如半导体光电器件，例如激光二极管，光调制器，光放大器，光开关等。 还公开了包括这种装置的光电集成电路（OEIC）和光子集成电路（PIC）。 根据本发明，提供了一种制造光学装置（40）的方法，装置本体部分（15），其中将要制造装置（40）包括量子阱混合（QWI）结构（30）， 该方法包括在其上沉积介电层（51）之前等离子体蚀刻器件本体部分（5）的表面的至少一部分的步骤，以至少将结构缺陷引入器件本体的部分（53） 邻近电介质层（51）的部分（5）。 结构缺陷基本上包括“点”缺陷。

公开(公告)号：WO2002061814A2

公开(公告)日：2002-08-08

申请号：PCT/GB2002/000445

申请日：2002-02-01

Applicant: THE UNIVERSITY COURT OF THE UNIVERSITY OF GLASGOW ,  MARSH, John, Haig ,  MCDOUGALL, Stewart, Duncan ,  HAMILTON, Craig, James ,  KOWALSKI, Olek, Peter

Inventor： MARSH, John, Haig ,  MCDOUGALL, Stewart, Duncan ,  HAMILTON, Craig, James ,  KOWALSKI, Olek, Peter

IPC: H01L21/18

CPC classification number: B82Y20/00 ,  H01S5/026 ,  H01S5/2063 ,  H01S5/2068 ,  H01S5/3414

Abstract: There is disclosed an improved method of manufacturing of an optical device (40), particularly semiconductor optoelectronic devices such as laser diodes, optical modulators, optical amplifiers, optical switches, and optical detectors. The invention provides a method of manufacturing optical device (40), a device body portion (15) from which the device (40) is to be made including a Quantum well (QW) structure (30), the method including the step of: processing the device body portion (15) so as to create extended defects at least in a portion (53) of the device portion (5). Each extended defect is a structural defect comprising a plurality of adjacent "point" defects.

Abstract translation: 公开了一种改进的光学器件（40）的制造方法，特别是诸如激光二极管，光调制器，光放大器，光开关和光检测器之类的半导体光电器件。 本发明提供一种制造光学装置（40）的方法，装置主体部分（15），其中将要制造装置（40）包括量子阱（QW）结构（30），该方法包括以下步骤： 处理所述装置主体部分（15）以至少在所述装置部分（5）的一部分（53）中产生延伸的缺陷。 每个延伸的缺陷是包括多个相邻“点”缺陷的结构缺陷。

公开(公告)号：WO2010029310A3

公开(公告)日：2010-08-12

申请号：PCT/GB2009002187

申请日：2009-09-11

Applicant: INTENSE LTD ,  MARSH JOHN HAIG ,  MCDOUGALL STEWART DUNCAN ,  BACCHIN GIANLUCA ,  QIU BOCANG

Inventor： MARSH JOHN HAIG ,  MCDOUGALL STEWART DUNCAN ,  BACCHIN GIANLUCA ,  QIU BOCANG

IPC: B41J2/45 ,  B41J2/47

CPC classification number: B41J2/451 ,  B41J2/473

Abstract: An imaging device comprising a linear array (13) of laser diodes (16a-16f) that are adapted to provide an optical output comprising a plurality of spaced-apart optical beams (17a-17f). Focusing optics (18, 19) are configured to form a plurality of image points (7) from said spaced-apart optical beams, the image points being spaced apart along a first axis (7a). The image points have a non-uniform spacing (31, 41, 51, 52) along the first axis. By scanning the linear array along a photosensitive plate (5), and timing the firing of lasers accordingly, every pixel point on the photosensitive plate can be imaged by one of the image points from the laser array. Non-uniform spacing of the image points can provide advantages in heat dissipation from the laser elements, and reduction of some printing artifacts on the photosensitive plate.

Abstract translation: 一种成像装置，包括激光二极管（16a-16f）的线性阵列（13），其适于提供包括多个间隔开的光束（17a-17f）的光输出。 聚焦光学器件（18,19）被配置成从所述间隔开的光束形成多个图像点（7），图像点沿着第一轴线（7a）间隔开。 图像点沿着第一轴具有不均匀的间隔（31,41,51,52）。 通过沿着感光板（5）扫描线性阵列，并相应地激发激光的定时，感光板上的每个像素点可以通过激光阵列中的一个图像点成像。 图像点的不均匀间隔可以提供来自激光元件的散热的优点，以及减少感光板上的一些印刷伪影。

公开(公告)号：WO2010085241A1

公开(公告)日：2010-07-29

申请号：PCT/US2009/031458

申请日：2009-01-20

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  TONG, William M. ,  QUITORIANO, Nathaniel J. ,  STEWART, Duncan ,  KUEKES, Philip J.

Inventor： TONG, William M. ,  QUITORIANO, Nathaniel J. ,  STEWART, Duncan ,  KUEKES, Philip J.

IPC: H01L27/115 ,  H01L21/8247 ,  H01L21/265

CPC classification number: H01L21/26586 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147 ,  H01L45/165

Abstract: A multilayer memristive device includes a first electrode (410); a second electrode (405); a first memristive region (430) and a second memristive region (435) which created by directional ion implantation of dopant ions (420, 425) and are interposed between the first electrode (410) and the second electrode (405); and mobile dopants (315) which move within the first memristive region (430) and the second memristive region (435) in response to an applied electrical field.

Abstract translation: 多层回忆装置包括第一电极（410）; 第二电极（405）; 通过定向离子注入掺杂剂离子（420,425）而形成的第一忆阻区（430）和第二忆阻区（435），并置于第一电极（410）和第二电极（405）之间; 以及响应于施加的电场在第一忆阻区（430）和第二忆阻区（435）内移动的移动掺杂剂（315）。

公开(公告)号：WO2010029310A2

公开(公告)日：2010-03-18

申请号：PCT/GB2009/002187

申请日：2009-09-11

Applicant: INTENSE LIMITED ,  MARSH, John, Haig ,  McDOUGALL, Stewart, Duncan ,  BACCHIN, Gianluca ,  QIU, Bocang

Inventor： MARSH, John, Haig ,  McDOUGALL, Stewart, Duncan ,  BACCHIN, Gianluca ,  QIU, Bocang

IPC: B41J2/45

CPC classification number: B41J2/451 ,  B41J2/473

Abstract: An imaging device comprising a linear array of laser diodes that are adapted to provide an optical output comprising a plurality of spaced-apart optical beams. Focusing optics are configured to form a plurality of image points from said spaced-apart optical beams, the image points being spaced apart along a first axis. The image points have a non¬ uniform spacing along the first axis. By scanning the linear array along a photosensitive plate, and timing the firing of lasers accordingly, every pixel point on the photosensitive plate can be imaged by one of the image points from the laser array. Non-uniform spacing of the image points can provide advantages in heat dissipation from the laser elements, and reduction of some printing artifacts on the photosensitive plate.

Abstract translation: 一种成像装置，包括激光二极管的线性阵列，其适于提供包括多个间隔开的光束的光输出。 聚焦光学器件被配置成从所述间隔开的光束形成多个图像点，图像点沿着第一轴线间隔开。 图像点沿着第一轴具有非均匀的间距。 通过沿着感光板扫描线性阵列，并相应地激发激光的定时，感光板上的每个像素点可以通过激光阵列中的一个图像点成像。 图像点的不均匀间隔可以提供来自激光元件的散热的优点，以及减少感光板上的一些印刷伪影。

公开(公告)号：WO2010014064A1

公开(公告)日：2010-02-04

申请号：PCT/US2008/009246

申请日：2008-07-31

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  YANG, Jianhua ,  BORGHETTI, Julien ,  STEWART, Duncan ,  WILLIAMS, R. Stanley

Inventor： YANG, Jianhua ,  BORGHETTI, Julien ,  STEWART, Duncan ,  WILLIAMS, R. Stanley

IPC: H01L29/41

CPC classification number: H01L29/861 ,  H01L27/101 ,  H01L27/1021 ,  H01L29/8615 ,  H01L29/8616 ,  H01L29/872 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147

Abstract: Embodiments of the present invention are directed to reconfigurable two-terminal electronic switch devices (100) comprising a compound (102) sandwiched between two electrodes (104,106). These devices are configured so that the two electrode/compound interface regions can be either rectifying or conductive, depending on the concentration of dopants at the respective interface, which provides four different device operating characteristics. By forcing charged dopants into or out of the interface regions with an applied electric field pulse, a circuit element can be switched from one type of stable operation to another in at least three different ways. A family of devices built to express these properties display behaviors that provide new opportunities for nanoscale electronic devices.

Abstract translation: 本发明的实施例涉及包括夹在两个电极（104,106）之间的化合物（102）的可重新配置的两端子电子开关装置（100）。 这些器件被配置为使得两个电极/复合界面区域可以是整流或导电，这取决于各个界面处的掺杂剂的浓度，其提供四种不同的器件工作特性。 通过用施加的电场脉冲将带电荷的掺杂剂强制进出界面区域，电路元件可以以至少三种不同的方式从一种类型的稳定操作切换到另一种。 一系列用于表现这些属性的设备显示出为纳米级电子设备提供新机会的行为。

公开(公告)号：WO2009008923A3

公开(公告)日：2009-08-20

申请号：PCT/US2008004423

申请日：2008-04-02

Applicant: HEWLETT PACKARD DEVELOPMENT CO ,  KOBAYASHI NOBUHIKO ,  WU WEI ,  STEWART DUNCAN ,  SHARMA SHASHANK ,  WANG SHIH-YUAN ,  WILLIAMS R STANLEY

Inventor： KOBAYASHI NOBUHIKO ,  WU WEI ,  STEWART DUNCAN ,  SHARMA SHASHANK ,  WANG SHIH-YUAN ,  WILLIAMS R STANLEY

IPC: B82B3/00 ,  B82B1/00

CPC classification number: H01L31/035281 ,  B82Y10/00 ,  B82Y30/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L31/036 ,  H01L31/09 ,  H01L31/101 ,  H01L31/105 ,  Y02E10/50 ,  Y10S977/762 ,  Y10S977/814

Abstract: Methods of making nanometer-scale semiconductor structures with controlled size are disclosed. Semiconductor structures (200, 300, 400, 500, 600. 700) that include one or ore nanowires (104, 204, 304, 404, 504, 604, 704) are also disclosed. The nanowires can include a passivation layer or have a hollow tube structure.

Abstract translation: 公开了制造具有可控尺寸的纳米级半导体结构的方法。 还公开了包括一个或多个纳米线（104,204,304,404,504,604,704）的半导体结构（200,300,400,500,600,700）。 纳米线可以包括钝化层或具有中空管结构。

公开(公告)号：WO2009008923A2

公开(公告)日：2009-01-15

申请号：PCT/US2008/004423

申请日：2008-04-02

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L. P. ,  KOBAYASHI, Nobuhiko ,  WU, Wei ,  STEWART, Duncan ,  SHARMA, Shashank ,  WANG, Shih-yuan ,  WILLIAMS, R. Stanley,

Inventor： KOBAYASHI, Nobuhiko ,  WU, Wei ,  STEWART, Duncan ,  SHARMA, Shashank ,  WANG, Shih-yuan ,  WILLIAMS, R. Stanley,

CPC classification number: H01L31/035281 ,  B82Y10/00 ,  B82Y30/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L31/036 ,  H01L31/09 ,  H01L31/101 ,  H01L31/105 ,  Y02E10/50 ,  Y10S977/762 ,  Y10S977/814

Abstract: Methods of making nanometer-scale semiconductor structures with controlled size are disclosed. Semiconductor structures (200, 300, 400, 500, 600. 700) that include one or ore nanowires (104, 204, 304, 404, 504, 604, 704) are also disclosed. The nanowires can include a passivation layer or have a hollow tube structure.

Abstract translation: 公开了制备具有受控尺寸的纳米级半导体结构的方法。 还公开了包括一个或纳米线（104,204,304,404,504,604,704）的半导体结构（200,300,400,500,600.707）。 纳米线可以包括钝化层或具有中空管结构。

公开(公告)号：WO2008134021A1

公开(公告)日：2008-11-06

申请号：PCT/US2008/005398

申请日：2008-04-25

Applicant: HEWLETT=PACKARD DEVELOPMENT COMPANY, L. P. ,  STEWART, Duncan ,  BEAUSOLEIL, Raymond ,  KUEKES, Philip, J.

Inventor： STEWART, Duncan ,  BEAUSOLEIL, Raymond ,  KUEKES, Philip, J.

IPC: H01L23/36

CPC classification number: F27B17/0025 ,  F27D19/00 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In an embodiment, a microchip (10) includes a plurality of heat-producing electronic devices (14) and a plurality of heat-sensitive devices (16). A plurality of temperature control elements (18) are spatially distributed relative to the heat-producing electronis devices and the heat-senitive devices to enable active contoal of temperature to compensate for spatially non-uniform and temporally-varying heat emitted from the heat-producing electronic devices.

Abstract translation: 在一个实施例中，微芯片（10）包括多个发热电子器件（14）和多个热敏器件（16）。 多个温度控制元件（18）相对于发热电子装置和热传递装置在空间上分布，以使得能够有效地调节温度以补偿从发热产生的空间上不均匀和时间变化的热量 电子设备。

公开(公告)号：WO2008054400A3

公开(公告)日：2008-08-21

申请号：PCT/US2006043687

申请日：2006-11-08

Applicant: HEWLETT PACKARD DEVELOPMENT CO ,  STEWART DUNCAN ,  OHLBERG DOUGLAS A ,  WILLIAMS STANLEY R ,  KUEKES PHILIP J

Inventor： STEWART DUNCAN ,  OHLBERG DOUGLAS A ,  WILLIAMS STANLEY R ,  KUEKES PHILIP J

IPC: G11C13/02

CPC classification number: G11C13/0009 ,  G11C2213/55 ,  G11C2213/56 ,  G11C2213/77 ,  H01L45/04 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/14 ,  H01L45/142 ,  H01L45/143 ,  H01L45/146 ,  H01L51/0591

Abstract: A control layer (26, 26', 28, 28', 28") for use in a junction of a nanoscale electronic switching device (10) is disclosed. The control layer (26, 26', 28, 28', 28") includes a material that is chemically compatible with a connecting layer (16) and at least one electrode (12, 14) in the nanoscale switching device (10). The control layer (26, 26', 28, 28', 28") is adapted to control at least one of electrochemical reaction paths, electrophysical reaction paths, and combinations thereof during operation of the device (10).

Abstract translation: 本发明公开了一种用于纳米级电子开关装置（10）的接合处的控制层（26,26'，28,28'，28“），控制层（26,26'，28,28'，28” ）包括与纳米级开关装置（10）中的连接层（16）和至少一个电极（12,14）化学兼容的材料。 控制层（26,26'，28,28'，28“）适于在装置（10）的操作期间控制电化学反应路径，电物理反应路径及其组合中的至少一个。