Method and hardware system for driving stepper motor in feed-forward voltage mode
    31.
    发明专利
    Method and hardware system for driving stepper motor in feed-forward voltage mode 有权
    用于在前馈电压模式下驱动步进电机的方法和硬件系统

    公开(公告)号:JP2010268675A

    公开(公告)日:2010-11-25

    申请号:JP2010106511

    申请日:2010-05-06

    CPC classification number: H02P8/12 H02P8/22

    Abstract: PROBLEM TO BE SOLVED: To suppress a phase current generated in winding of a stator over a full speed range of motor when driving a stepper motor in a voltage mode. SOLUTION: A method of driving a stepper motor in feed-forward voltage mode includes (A) a step of setting the amplitude of a sinusoidal phase voltage of the stepper motor to a predetermined value to rotate the stepper motor at a desired speed. The predetermined value is the sum of a back-electromotive force (BEMF) estimated via a function of the desired speed and a product of a desired amplitude of a phase current (Iphase) and an estimated absolute value of the impedance of the stepper motor. COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题:在电压模式下驱动步进电机时,抑制在电动机的全速范围内的定子绕组中产生的相电流。 解决方案:一种以前馈电压模式驱动步进电动机的方法包括(A)将步进电动机的正弦相电压的振幅设定为预定值的步骤,以使步进电动机以期望的速度旋转 。 预定值是通过期望速度的函数估计的反电动势(BEMF)和相电流(Iphase)的期望幅度与步进电动机的阻抗的估计绝对值的乘积之和。 版权所有(C)2011,JPO&INPIT

    Method and system for rendering image, and computer program therefor
    32.
    发明专利
    Method and system for rendering image, and computer program therefor 审中-公开
    用于渲染图像的方法和系统及其计算机程序

    公开(公告)号:JP2010045776A

    公开(公告)日:2010-02-25

    申请号:JP2009177742

    申请日:2009-07-30

    CPC classification number: H04N13/0011 G06T15/20

    Abstract: PROBLEM TO BE SOLVED: To attain a non-control perspective (far/near) method for using a virtual camera and variable frame speed. SOLUTION: The method includes a system initialization step 100, a virtual camera definition step 102 for calculating a projection matrix of a desired virtual camera, a projection step 104 which projects all pixels in a frame to the virtual camera as a target, a blending step 106 which makes a relative weighting composition on a viewpoint as a target, a blockade solution step 108 which fills a remained blockade, a border matching step 110 which hides an artificial unnatural portion by matching the border, and a filter processing step 112 which makes a produced frame real. The method concurrently performs free visual point rendering to both eyes of a viewer. COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题:为了获得使用虚拟照相机的非控制透视(远/近)方法和可变帧速度。 解决方案:该方法包括系统初始化步骤100,用于计算期望的虚拟相机的投影矩阵的虚拟相机定义步骤102,将帧中的所有像素投影到虚拟相机作为目标的投影步骤104, 将作为目标的视点进行相对加权组合的混合步骤106,填充剩余封锁的封锁解决步骤108,通过匹配边界来隐藏人造不自然部分的边界匹配步骤110和滤波处理步骤112 这使得制作框架真实。 该方法同时对观看者的双眼执行自由的视点呈现。 版权所有(C)2010,JPO&INPIT

    Method and circuit structure for improving the effectiveness of esd protection on semiconductor circuit structure
    33.
    发明专利
    Method and circuit structure for improving the effectiveness of esd protection on semiconductor circuit structure 审中-公开
    改善半导体电路结构ESD保护效果的方法和电路结构

    公开(公告)号:JP2009060117A

    公开(公告)日:2009-03-19

    申请号:JP2008251327

    申请日:2008-09-29

    CPC classification number: H01L29/735 H01L27/0259

    Abstract: PROBLEM TO BE SOLVED: To improve ESD protection in an electronic element.
    SOLUTION: A method and circuit structure for improving the effectiveness of ESD protection in circuit structures formed in a semiconductor substrate overlaid with an epitaxial layer (3) include at least one ESD protection lateral bipolar transistor (5) formed on the surface of the epitaxial layer (3). The method and circuit structure consist of formation of a well (4) isolated from the substrate (2) under the transistor (5). The bipolar (5) can be fully isolated from the substrate (2) by first (10) and second (11) N wells which extend from the epitaxial layer (3) down to and in contact with the buried well (4).
    COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题:改善电子元件中的ESD保护。 解决方案:用于提高形成在覆盖有外延层(3)的半导体衬底中形成的电路结构中的ESD保护的有效性的方法和电路结构包括形成在外延层(3)的表面上的至少一个ESD保护横向双极晶体管(5) 外延层(3)。 该方法和电路结构包括从晶体管(5)下面的衬底(2)隔离的阱(4)的形成。 双极(5)可以通过从外延层(3)向下延伸到埋地井(4)并与其接触的第一(10)和第二(11)N阱与基板(2)完全隔离。 版权所有(C)2009,JPO&INPIT

    Micro-electro-mechanical gyroscope with open-loop reading device, and control method thereof
    34.
    发明专利
    Micro-electro-mechanical gyroscope with open-loop reading device, and control method thereof 有权
    具有开环读取装置的微电子机械陀螺仪及其控制方法

    公开(公告)号:JP2009042221A

    公开(公告)日:2009-02-26

    申请号:JP2008175699

    申请日:2008-07-04

    CPC classification number: G01C19/5762 G01C19/5726

    Abstract: PROBLEM TO BE SOLVED: To enable a reduction in the influence of the disturbance components, superimposed on signal components caused by rotation of a gyroscope itself. SOLUTION: A micro-electro-mechanical gyroscope includes a first mass 107, which is able to oscillate along a first axis with respect to a fixed body, and an inertial sensor 6, having a second mass 108, constrained to the first mass so as to oscillate along a second axis, in response to a rotation of the gyroscope. A driving device 103, coupled to the first mass, forms a control loop for maintaining the first mass in oscillation at a resonance frequency. A reading device, which detects displacements of the second mass along the second axis, includes a charge amplifier for converting charge packets (Q RS ) supplied by the inertial sensor into a charge-integration signal, and a low-pass filter. A calibration stage enables modification of the voltage (V B ) between the second mass and the fixed body so as to minimize the component, at a frequency that is twice the resonance frequency in the charge-integration signal. COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题:为了能够减少由陀螺仪本身的旋转引起的信号分量上的干扰成分的影响。 解决方案:微机电陀螺仪包括能够相对于固定体沿着第一轴线振荡的第一质量块107和惯性传感器6,惯性传感器6具有被限制到第一质量的第二质量块108 以便响应于陀螺仪的旋转而沿第二轴线振荡。 耦合到第一质量块的驱动装置103形成用于将第一质量块以共振频率保持在振荡中的控制回路。 检测第二质量沿着第二轴的位移的读取装置包括用于将由惯性传感器提供的电荷分组(Q RS )转换成电荷积分信号的电荷放大器, 通过滤波器 校准阶段使得能够修改第二质量块和固定体之间的电压(V SB SB B),以便在电荷积分信号中谐振频率的两倍的频率下使分量最小化。 版权所有(C)2009,JPO&INPIT

    Microelectromechanical integrated sensor structure using rotary drive motion
    35.
    发明专利
    Microelectromechanical integrated sensor structure using rotary drive motion 有权
    使用旋转驱动运动的微电子综合传感器结构

    公开(公告)号:JP2007271611A

    公开(公告)日:2007-10-18

    申请号:JP2007060949

    申请日:2007-03-09

    CPC classification number: G01C19/5712

    Abstract: PROBLEM TO BE SOLVED: To provide an integrated microelectromechanical mechanism, having high sensing efficiency and high design possibilities. SOLUTION: A first sensor mass 16a is connected to a drive mass 3 via an elastic support member 20 so as to make a first sensing motion, in the presence of a first external stress. The drive mass 3 is attached to an anchor 7, disposed along a rotation axis, and makes a rotary motion on the rotation axis z. Installed in the drive mass is a through hole 9a, in which the first sensor mass 16a is disposed. The elastic support member and the anchor cause the first sensor mass 16a to be fixed to the drive mass 3 when a rotational motion is made, and cause the sensor mass 16a to be separated from the drive mass, when a sensing motion is made. A second sensor mass 25a is connected to the drive mass so as to make a second sensing motion in the presence of a second external stress. The first sensing motion is a rotational motion, centered about an in-plane axis, and the second sensing motion is a linear motion along the direction of the in-plane axis. COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题:提供具有高感测效率和高设计可能性的集成微机电机构。 解决方案:第一传感器质量块16a经由弹性支撑构件20连接到驱动块3,以便在存在第一外部应力的情况下进行第一感测运动。 驱动块3安装在沿旋转轴线设置的锚固件7上,并在旋转轴线z上进行旋转运动。 安装在驱动块中的是设有第一传感器块16a的通孔9a。 当进行旋转运动时,弹性支撑构件和锚使得第一传感器质量块16a固定到驱动块3,并且当进行感测运动时,使传感器质量块16a与驱动块分离。 第二传感器质量25a连接到驱动质量块,以便在存在第二外部应力的情况下进行第二感测运动。 第一感测运动是以面内轴为中心的旋转运动,第二感测运动是沿着平面内轴方向的直线运动。 版权所有(C)2008,JPO&INPIT

    Monolithic integrated resistance structure having power igbt device
    36.
    发明专利
    Monolithic integrated resistance structure having power igbt device 审中-公开
    具有功率IGBT器件的单片集成电阻结构

    公开(公告)号:JP2005033199A

    公开(公告)日:2005-02-03

    申请号:JP2004196957

    申请日:2004-07-02

    CPC classification number: H01L29/7395

    Abstract: PROBLEM TO BE SOLVED: To provide a monolithic integrated high-voltage resistance structure having an IGBT(insulated gate bipolar transistor) device which has structural and functional characteristics capable of suppressing the occurrence of a parasitic transistor and which overcomes a limited condition and defect affecting the above conventional devices.
    SOLUTION: In the device in which a second conductive semiconductor layer(19) is integrated on a laminated first conductive semiconductor substrate(16) and which includes a resistance structure(17) for voltage control and an IGBT device(18), the resistance structure(17) surrounds a part(22) of the semiconductor layer(19), shows the first conductive type, and includes at least one of substantially ring-like regions(21a).
    COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 要解决的问题:提供一种具有IGBT(绝缘栅双极晶体管)器件的单片集成高压电阻结构,其具有能够抑制寄生晶体管的发生并且克服有限的条件的结构和功能特性, 缺陷影响上述常规设备。 解决方案:在第二导电半导体层(19)集成在层叠的第一导电半导体衬底(16)上并且包括用于电压控制的电阻结构(17)和IGBT器件(18)的器件中, 电阻结构(17)围绕半导体层(19)的部分(22),显示出第一导电类型,并且包括至少一个基本上呈环状的区域(21a)。 版权所有(C)2005,JPO&NCIPI

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