公开(公告)号：WO2013023197A2

公开(公告)日：2013-02-14

申请号：PCT/US2012/050486

申请日：2012-08-11

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC. ,  SHUR, Michael ,  SHATALOV, Maxim, S. ,  DOBRINSKY, Alexander ,  GASKA, Remigijus ,  YANG, Jinwei

Inventor： SHUR, Michael ,  SHATALOV, Maxim, S. ,  DOBRINSKY, Alexander ,  GASKA, Remigijus ,  YANG, Jinwei

IPC: H01L33/04 ,  H01L33/06

CPC classification number: H01L29/15 ,  B82Y20/00 ,  H01L21/0254 ,  H01L33/06 ,  H01S5/0421 ,  H01S5/3216 ,  H01S5/342 ,  H01S5/34333

Abstract: A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow through the layer is provided. The layer can comprise a short period superlattice, which includes barriers alternating with wells. In this case, the barriers can include both transparent regions, which are configured to reduce an amount of radiation that is absorbed in the layer, and higher conductive regions, which are configured to keep the voltage drop across the layer within a desired range.

Abstract translation: 提供了一种包括一个或多个具有横向区域的层，该层被配置为有助于辐射通过该层的传输和被配置为促进流过该层的电流的横向区域。 该层可以包括短期超晶格，其包括与井交替的障碍物。 在这种情况下，障碍物可以包括被配置为减少在层中吸收的辐射量的透明区域以及被配置为将跨越层的电压降保持在期望范围内的较高导电区域。

公开(公告)号：WO2011159993A2

公开(公告)日：2011-12-22

申请号：PCT/US2011/040850

申请日：2011-06-17

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC. ,  GASKA, Remigijus ,  SHATALOV, Maxim, S. ,  SHUR, Michael

Inventor： GASKA, Remigijus ,  SHATALOV, Maxim, S. ,  SHUR, Michael

IPC: H01L33/04

CPC classification number: H01L33/04 ,  H01L33/06 ,  H01L33/10 ,  H01L33/22 ,  H01L33/385 ,  H01L33/405

Abstract: A light emitting diode is provided, which includes an n-type contact layer and a light generating structure adjacent to the n-type contact layer. The light generating structure includes a set of quantum wells. The contact layer and light generating structure can be configured so that a difference between an energy of the n-type contact layer and an electron ground state energy of a quantum well is greater than an energy of a polar optical phonon in a material of the light generating structure. Additionally, the light generating structure can be configured so that its width is comparable to a mean free path for emission of a polar optical phonon by an electron injected into the light generating structure. The diode can include a blocking layer, which is configured so that a difference between an energy of the blocking layer and the electron ground state energy of a quantum well is greater than the energy of the polar optical phonon in the material of the light generating structure. The diode can include a composite contact, including an adhesion layer, which is at least partially transparent to light generated by the light generating structure and a reflecting metal layer configured to reflect at least a portion of the light generated by the light generating structure.

Abstract translation: 提供一种发光二极管，其包括n型接触层和与n型接触层相邻的发光结构。 光产生结构包括一组量子阱。 接触层和发光结构可以被配置为使得n型接触层的能量与量子阱的电子基态能量之间的差大于光的材料中的极性光学声子的能量 生成结构。 另外，发光结构可以被配置为使得其宽度与用于通过注入到光产生结构中的电子发射极性光学声子的平均自由程相当。 二极管可以包括阻挡层，其被配置为使得阻挡层的能量与量子阱的电子基态能量之间的差异大于光生成结构的材料中的极化光学声子的能量 。 二极管可以包括复合触点，其包括对由光产生结构产生的光至少部分透明的粘附层和被配置为反射由光产生结构产生的光的至少一部分的反射金属层。

公开(公告)号：WO2009102745A2

公开(公告)日：2009-08-20

申请号：PCT/US2009/033730

申请日：2009-02-11

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC. ,  ZUKAUSKAS, Arturas ,  VAICEKAUSKAS, Rimantas ,  IVANAUSKAS, Feliksas ,  VAITKEVICIUS, Henrikas ,  SHUR, Michael

Inventor： ZUKAUSKAS, Arturas ,  VAICEKAUSKAS, Rimantas ,  IVANAUSKAS, Feliksas ,  VAITKEVICIUS, Henrikas ,  SHUR, Michael

IPC: H01L33/00

CPC classification number: H05B33/0857 ,  F21K9/00 ,  H05B33/0866

Abstract: The current invention discloses polychromatic sources of white light, which are composed of at least two groups of colored emitters, such as light-emitting diodes (LEDs) are disclosed. Based on a novel approach of the assessment of quality of white light using 1269 test color samples from the enhanced Munsell palette, the spectral compositions of white light composed of two to five (or more) narrow-band emissions with the highest number of colors relevant to human vision rendered almost indistinguishably from a blackbody radiator are introduced. An embodiment of the current invention can be used, in particular, for designing polychromatic sources of white light with the ultimate quality capable of rendering of all colors of the real world.

Abstract translation: 本发明公开了由至少两组彩色发射体组成的白光多色源，例如发光二极管（LED）。 基于使用来自增强型Munsell调色板的1269个测试颜色样本来评估白光质量的新颖方法，由具有最高颜色数量的两到五个（或更多个）窄带辐射组成的白光的光谱组成相关 引入了与黑体散热器几乎无法区分的人类视觉。 本发明的一个实施例特别可用于设计具有能够渲染现实世界所有颜色的最终质量的白光多色源。

公开(公告)号：WO2007087592A2

公开(公告)日：2007-08-02

申请号：PCT/US2007/061030

申请日：2007-01-25

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC. ,  SHUR, Michael ,  GASKA, Remigijus

Inventor： SHUR, Michael ,  GASKA, Remigijus

IPC: H01S3/06 ,  H01S3/091

CPC classification number: H01S3/0933 ,  H01S3/094084 ,  H01S5/041 ,  H01S5/105 ,  H01S5/36

Abstract: Laser light generating solutions are provided that use one or more light emitting diodes to optically pump a laser light generating structure. The laser light generating structure can include organic or inorganic laser material. The light emitting diodes can be located on the same substrate as the laser light generating structure or on a separate substrate that is connected to the substrate with the laser light generating structure. Various other features can be included to enhance the optical pumping and/or enable electrical pumping of the active structure when it includes an inorganic laser material.

Abstract translation: 提供了使用一个或多个发光二极管来光学泵浦激光产生结构的激光产生解决方案。 激光产生结构可以包括有机或无机激光材料。 发光二极管可以位于与激光产生结构相同的衬底上，或者位于与激光产生结构连接到衬底的单独衬底上。 当包括无机激光材料时，可以包括各种其它特征以增强光学泵浦和/或使电活动结构电泵浦。

公开(公告)号：WO2007002028A3

公开(公告)日：2007-01-04

申请号：PCT/US2006/023896

申请日：2006-06-20

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC. ,  GASKA, Remigijus ,  ZHANG, Jiangping ,  SHUR, Michael

Inventor： GASKA, Remigijus ,  ZHANG, Jiangping ,  SHUR, Michael

IPC: H01L21/00

Abstract: A solution for manufacturing a nitride-based heterostructure, semiconductor; device, or the like, by growing one or more layers using a metal film and/or nitride islands is provided. In an embodiment of the invention, a group-Ill nitride film is grown on a surface of a lower layer. The nitride film is grown by first epitaxially growing a group-Ill metal film on the surface in a substantially nitrogen-free atmosphere. The group-Ill metal film is grown such that it covers substantially an entire area of the surface. Next, the group-Ill metal film is nitridated to form a group-Ill nitride film. This process can be repeated one or more times to form the layer. In another embodiment of the invention, islands are formed on a surface of a lower layer from a group-Ill nitride film. The islands can be used to subsequent group-Ill nitride growth to form the group-Ill nitride layer. The invention provides an improved solution for growing a layer that can be used to generate heterostructures/semiconductors/devices having improved characteristics.

公开(公告)号：WO2019084264A3

公开(公告)日：2019-05-02

申请号：PCT/US2018/057505

申请日：2018-10-25

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.

Inventor： BARBER, Arthur, Peter, III

IPC: F21V33/00 ,  F21V23/04 ,  F21W131/205

Abstract: An illuminator comprising more than one set of ultraviolet radiation sources. A first set of ultraviolet radiation sources operate in a wavelength range of approximately 270 nanometers to approximately 290 nanometers. A second set of ultraviolet radiation sources operate in a wavelength range of approximately 380 nanometers to approximately 420 nanometers. The illuminator can also include a set of sensors for acquiring data regarding at least one object to be irradiated by the first and the second set of ultraviolet radiation sources. A control system configured to control and adjust a set of radiation settings for the first and the second set of ultraviolet radiation sources based on the data acquired by the set of sensors.

公开(公告)号：WO2017209457A1

公开(公告)日：2017-12-07

申请号：PCT/KR2017/005521

申请日：2017-05-26

Applicant: SEOUL VIOSYS CO., LTD. ,  SENSOR ELECTRONIC TECHNOLOGY, INC.

Inventor： SHUR, Michael ,  DOBRINSKY, Alexander ,  SHATALOV, Maxim S.

IPC: H01L33/00 ,  H01L33/12

CPC classification number: H01L33/0025 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/025 ,  H01L33/06 ,  H01L33/12 ,  H01L33/16 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/385

Abstract: A semiconductor heterostructure for an optoelectronic device is disclosed. The semiconductor heterostructure includes at least one stress control layer within a plurality of semiconductor layers used in the optoelectronic device. Each stress control layer includes stress control regions separated from adjacent stress control regions by a predetermined spacing. The stress control layer induces one of a tensile stress and a compressive stress in an adjacent semiconductor layer.

Abstract translation: 公开了一种用于光电子器件的半导体异质结构。 半导体异质结构包括在光电子器件中使用的多个半导体层内的至少一个应力控制层。 每个应力控制层包括与相邻应力控制区域隔开预定间隔的应力控制区域。 应力控制层在相邻的半导体层中引起拉应力和压应力之一。

公开(公告)号：WO2017171460A1

公开(公告)日：2017-10-05

申请号：PCT/KR2017/003537

申请日：2017-03-31

Applicant: SEOUL VIOSYS CO., LTD. ,  SENSOR ELECTRONIC TECHNOLOGY, INC.

Inventor： DOBRINSKY, Alexander ,  SHUR, Michael

IPC: B67D1/07 ,  B67D1/08

Abstract: An approach for treating a fluid transport conduit with ultraviolet radiation is disclosed. A light guiding unit, operatively coupled to a set of ultraviolet radiation sources, encloses the fluid transport conduit. The light guiding unit directs ultraviolet radiation emitted from the ultraviolet radiation sources to ultraviolet transparent sections on an outer surface of the fluid transport conduit. The emitted ultraviolet radiation passes through the ultraviolet transparent sections, penetrates the fluid transport conduit and irradiates the internal walls. A control unit adjusts a set of operating parameters of the ultraviolet radiation sources as a function of the removal of contaminants from the internal walls of the fluid transport conduit.

Abstract translation: 公开了一种用紫外辐射处理流体输送管道的方法。 可操作地耦合到一组紫外线辐射源的光导单元封闭流体输送导管。 导光单元将从紫外线辐射源发射的紫外线辐射到流体输送导管的外表面上的紫外线透明部分。 发射的紫外线辐射通过紫外线透射部分，穿透流体输送导管并照射内壁。 控制单元根据从流体输送导管的内壁去除污染物的功能来调整紫外线辐射源的一组操作参数。

公开(公告)号：WO2017127461A1

公开(公告)日：2017-07-27

申请号：PCT/US2017/013994

申请日：2017-01-18

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.

Inventor： DOBRINSKY, Alexander ,  SHUR, Michael

IPC: H01L33/58 ,  H01L33/02 ,  H01L33/22 ,  H01L33/12 ,  H01L33/50

CPC classification number: H01L33/22 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/06 ,  H01L33/10 ,  H01L33/12 ,  H01L33/145 ,  H01L33/20 ,  H01L33/32 ,  H01L33/325 ,  H01L33/38 ,  H01L33/62 ,  H01L2933/0091

Abstract: A semiconductor structure for use in fabricating a semiconductor device having improved light propagation is provided. The structure includes at least one layer transparent to radiation having a target wavelength relevant to operation of the semiconductor device. During operation of the semiconductor device, radiation of the target wavelength enters the transparent layer through a first side and exits the transparent layer through a second side. At least one of the first side or the second side comprises a profiled surface. The profiled surface includes a plurality of vacancies fabricated in the material of the layer. Each vacancy comprises side walls configured for at least partial diffusive scattering of the radiation of the target wavelength.

Abstract translation: 提供了用于制造具有改善的光传播的半导体器件的半导体结构。 该结构包括至少一个对于具有与半导体器件的操作相关的目标波长的辐射透明的层。 在半导体器件的操作期间，目标波长的辐射通过第一侧进入透明层并且通过第二侧离开透明层。 第一侧或第二侧中的至少一个包括成型表面。 成型表面包括在层的材料中制造的多个空位。 每个空位包括配置用于目标波长辐射的至少部分散射散射的侧壁。

公开(公告)号：WO2016040927A2

公开(公告)日：2016-03-17

申请号：PCT/US2015/049922

申请日：2015-09-14

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.

Inventor： DOBRINSKY, Alexander ,  SHUR, Michael ,  GASKA, Remigijus

IPC: G02F1/13357 ,  F21S2/00 ,  F21V5/00

CPC classification number: A61L2/10 ,  A61L2/00 ,  A61L2/088 ,  A61L9/00 ,  A61L2209/11 ,  F21V7/0091 ,  G02B6/00 ,  G02B6/0003 ,  G02B6/0051 ,  G02B6/006

Abstract: A diffusive illuminator is provided. The diffusive illuminator includes a set of light sources and a light guiding structure including a plurality of layers. At least some of the layers can be formed of a fluoropolymer and at least one layer can be formed of a transparent fluid. The light guiding structure also includes an emission surface through which diffused light exits. The light guiding structure can further include diffusive elements associated with at least one of the plurality of layers. Each diffusive element can diffuse the light to within forty percent of Lambertian distribution. The diffusive elements can be arranged based on a desired uniformity of the diffused light at a target distance corresponding to a surface to be illuminated. The diffusive illuminator can emit ultraviolet light, and can be implemented as part of a disinfection system.

Abstract translation: 提供漫射照明器。 扩散照明器包括一组光源和包括多个层的导光结构。 至少一些层可以由氟聚合物形成，并且至少一层可以由透明流体形成。 导光结构还包括散射光通过其射出的发射表面。 导光结构还可以包括与多个层中的至少一个相关联的扩散元件。 每个漫射元件可将光扩散到朗伯分布的百分之四十以内。 扩散元件可以基于对应于待照射表面的目标距离处的漫射光的期望均匀性来布置。 扩散照明器可以发射紫外线，并且可以作为消毒系统的一部分实现。