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    CRUCIBLE ASSEMBLY FOR CONTROLLING OXYGEN AND RELATED METHODS
    31.
    发明申请
    CRUCIBLE ASSEMBLY FOR CONTROLLING OXYGEN AND RELATED METHODS 审中-公开
    用于控制氧的坩埚组件及相关方法

    公开(公告)号：WO2014152852A2

    公开(公告)日：2014-09-25

    申请号：PCT/US2014/027981

    申请日：2014-03-14

    Applicant: SUNEDISON, INC.

    Inventor： KIMBEL, Steven L. ,  FERGUSON, Steve J. ,  SWAMINATHAN, Tirumani N. ,  ZEPEDA, Salvador ,  HILKER, John David ,  HOLZER, Joseph C. ,  MEYER, Benjamin M. ,  HOLDER, John D.

    IPC: C30B15/12

    CPC classification number: C30B15/12 ,  C30B29/06

    Abstract: A system for growing a crystal ingot from a melt includes a first crucible, a second crucible, and a weir. The first crucible has a first base with a top surface and a first sidewall that form a first cavity. The second crucible is disposed within the first cavity of the first crucible, and has a second base and a second sidewall that form a second cavity. The second base has a bottom surface that is shaped to allow the second base to rest against the top surface of the first base. The second crucible includes a crucible passageway to allow movement of the melt therethrough. The weir is disposed inward from the second sidewall to inhibit movement of the melt from a location outward of the weir to a location inward of the weir.

    Abstract translation: 用于从熔体生长晶锭的系统包括第一坩埚，第二坩埚和堰。 第一坩埚具有第一基座，第一基座具有形成第一腔的顶表面和第一侧壁。 第二坩埚设置在第一坩埚的第一腔内，并具有形成第二腔的第二基部和第二侧壁。 第二基座具有成形为允许第二基座靠在第一基座的顶表面上的底表面。 第二坩埚包括坩埚通道以允许熔体通过其移动。 堰从第二侧壁向内设置，以防止熔体从堰外的位置移动到堰内部的位置。

    IMPROVING OPERATION OF FLUIDIZED BED REACTORS BY OPTIMIZING TEMPERATURE GRADIENTS VIA PARTICLE SIZE DISTRIBUTION CONTROL
    32.
    发明申请
    IMPROVING OPERATION OF FLUIDIZED BED REACTORS BY OPTIMIZING TEMPERATURE GRADIENTS VIA PARTICLE SIZE DISTRIBUTION CONTROL 审中-公开
    通过粒度分布控制优化温度梯度来改善流化床反应器的运行

    公开(公告)号：WO2014106090A1

    公开(公告)日：2014-07-03

    申请号：PCT/US2013/078062

    申请日：2013-12-27

    Applicant: SUNEDISON, INC.

    Inventor： CHEW, Jia Wei ,  ZOU, Baisheng

    IPC: B01J8/18 ,  C01B33/00

    CPC classification number: C01B33/021 ,  B01J8/1809 ,  B01J2208/00017 ,  B01J2208/00672 ,  B01J2219/00247

    Abstract: A method of improving the operation of polysilicon fluidized bed reactors is disclosed. The present disclosure is directed to the optimization of axial temperature gradients in gas-solid fluidized bed systems. Varying the width of the particle size distribution in the reactor alters the temperature gradient within the reactor, thereby providing a means of a better control of internal temperature profiles and hence better reactor performance.

    Abstract translation: 公开了一种改善多晶硅流化床反应器运行的方法。 本公开涉及气固流化床系统中轴向温度梯度的优化。 改变反应器中粒度分布的宽度改变了反应器内的温度梯度，从而提供了一种更好地控制内部温度曲线并因此提高反应器性能的手段。

    DOUBLE SIDE POLISHER WITH PLATEN PARALLELISM CONTROL
    33.
    发明申请
    DOUBLE SIDE POLISHER WITH PLATEN PARALLELISM CONTROL 审中-公开
    双面抛光机与平行平行控制

    公开(公告)号：WO2014099812A1

    公开(公告)日：2014-06-26

    申请号：PCT/US2013/075465

    申请日：2013-12-16

    Applicant: SUNEDISON, INC.

    Inventor： ALBRECHT, Peter D. ,  BHAGAVAT, Sumeet S.

    IPC: B24B37/08 ,  B24B37/12

    CPC classification number: B24B7/228 ,  B24B37/08 ,  B24B37/12 ,  H01L21/30625 ,  H01L22/12

    Abstract: A platen for polishing a surface of a wafer has a reaction plate, a polishing plate, and a bladder. The reaction plate has a top and bottom surface, and defines a longitudinal axis. The polishing plate is positioned coaxially with the reaction plate. The polishing plate has a second top surface and a second bottom surface. The second top surface is adjacent to the bottom surface of the reaction plate. The bladder is coaxially located along a radially outer portion of either the top or bottom surface of the reaction plate. The bladder is connected with the polishing plate and able to expand to deform the polishing plate with respect to the bottom surface of the reaction plate.

    Abstract translation: 用于抛光晶片表面的压板具有反应板，抛光板和气囊。 反应板具有顶部和底部表面，并且限定纵向轴线。 抛光板与反应板同轴设置。 抛光板具有第二顶表面和第二底表面。 第二顶表面邻近反应板的底表面。 气囊沿着反应板的顶表面或底表面的径向外部同轴地定位。 气囊与抛光板连接，能够使抛光板相对于反应板的底面膨胀而变形。

    CRUCIBLE ASSEMBLY FOR CONTROLLING OXYGEN AND RELATED METHODS
    34.
    发明公开
    CRUCIBLE ASSEMBLY FOR CONTROLLING OXYGEN AND RELATED METHODS 有权
    ZERGEHÖRIGEVERFAHREN的TIEGELANORDNUNG ZUR SAUERSTOFFSTEUERUNG

    公开(公告)号：EP2971275A2

    公开(公告)日：2016-01-20

    申请号：EP14721103.1

    申请日：2014-03-14

    Applicant: Sunedison, Inc.

    Inventor： KIMBEL, Steven L. ,  FERGUSON, Steve J. ,  SWAMINATHAN, Tirumani N. ,  ZEPEDA, Salvador ,  HILKER, John David ,  HOLZER, Joseph C. ,  MEYER, Benjamin M. ,  HOLDER, John D.

    IPC: C30B15/12 ,  C30B29/06

    CPC classification number: C30B15/12 ,  C30B29/06

    Abstract: A system for growing a crystal ingot from a melt includes a first crucible, a second crucible, and a weir. The first crucible has a first base with a top surface and a first sidewall that form a first cavity. The second crucible is disposed within the first cavity of the first crucible, and has a second base and a second sidewall that form a second cavity. The second base has a bottom surface that is shaped to allow the second base to rest against the top surface of the first base. The second crucible includes a crucible passageway to allow movement of the melt therethrough. The weir is disposed inward from the second sidewall to inhibit movement of the melt from a location outward of the weir to a location inward of the weir.

    Abstract translation: 用于从熔体生长晶锭的系统包括第一坩埚，第二坩埚和堰。 第一坩埚具有形成第一腔的具有顶表面的第一基座和第一侧壁。 第二坩埚设置在第一坩埚的第一腔内，并且具有形成第二腔的第二底座和第二侧壁。 第二基座具有底部表面，其被成形为允许第二基座抵靠第一基座的顶表面。 第二坩埚包括允许熔体通过其移动的坩埚通道。 堰从第二侧壁向内设置，以阻止熔体从堰外向的位置移动到堰的内侧。

    CZOCHRALSKI CRUCIBLE FOR CONTROLLING OXYGEN AND RELATED METHODS
    36.
    发明公开
    CZOCHRALSKI CRUCIBLE FOR CONTROLLING OXYGEN AND RELATED METHODS 审中-公开
    CZOCHRALSKI-TIEGEL ZUR SAUERSTOFFSTEUERUNG UNDZUGEHÖRIGEVERFAHREN

    公开(公告)号：EP2971274A1

    公开(公告)日：2016-01-20

    申请号：EP14717590.5

    申请日：2014-03-13

    Applicant: Sunedison, Inc.

    Inventor： SWAMINATHAN, Tirumani N. ,  ZEPEDA, Salvador ,  HILKER, John David

    IPC: C30B15/12 ,  C30B29/06

    Abstract: A system for growing an ingot from a melt includes a first crucible, a second crucible, and a weir. The first crucible has a first base and a first sidewall that form an outer cavity for containing the melt. The weir is located on top of the first base at a location inward from the first sidewall to inhibit movement of the melt from a location outward of the weir to a location inward of the weir. The second crucible is sized for placement within the outer cavity and has a second base and a second sidewall that form an inner cavity. Related methods are also disclosed.

    Abstract translation: 用于从熔体生长锭的系统包括第一坩埚，第二坩埚和堰。 第一坩埚具有形成用于容纳熔体的外腔的第一基底和第一侧壁。 堰从第一侧壁向内位于第一基座的顶部，以防止熔体从堰外向外的位置移动到堰的内侧。 第二坩埚的尺寸适于放置在外腔内，并具有形成内腔的第二底座和第二侧壁。 还公开了相关方法。

    Methods and systems for schedule-based and alert-based cleaning of PV systems
    38.
    发明授权
    Methods and systems for schedule-based and alert-based cleaning of PV systems 有权

    公开(公告)号：US10607162B2

    公开(公告)日：2020-03-31

    申请号：US14878325

    申请日：2015-10-08

    Applicant: SunEdison, Inc.

    Inventor： Joseph Philip ,  Andras Boross ,  Stephen James Voss ,  Christopher Andrew Clarke ,  Anastasios Golnas ,  Nagendra Cherukupalli

    IPC: G06Q10/06 ,  H02S50/00

    Abstract: A method for scheduling cleaning of a photovoltaic (“PV”) system is implemented by a soiling monitoring computer system. The method includes determining a soiling level and a soiling rate for a photovoltaic (PV) system, calculating a cost associated with cleaning the PV system at each of a plurality of possible cleaning times, determining an expected energy output gain associated with cleaning the PV system at each of the plurality of possible times based on the soiling level and the soiling rate, calculating an expected benefit associated with cleaning the PV system at each of the plurality of possible cleaning times based on the expected energy output gain associated with each possible cleaning time, determining a first time of the plurality of possible times when the expected benefit exceeds the cost, and scheduling a cleaning time based on at least the determined first time.

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