ULTRASONIC TRANSDUCER
    35.
    发明公开

    公开(公告)号:US20240350162A1

    公开(公告)日:2024-10-24

    申请号:US18292766

    申请日:2022-07-29

    CPC classification number: A61B17/320068 A61B2017/00137 A61B2017/320074

    Abstract: An ultrasonic transducer for surgical applications is disclosed. The ultrasonic transducer comprises: a back mass; a front mass; an ultrasonic actuator arrangement held between the back mass and the front mass; and an ultrasonic horn arrangement forward of the front mass. The back mass, ultrasonic actuator arrangement, front mass and ultrasonic horn arrangement are arranged along a longitudinal axis of the transducer. Vibrations generated by the ultrasonic actuator arrangement are conducted into the front mass and into the ultrasonic horn arrangement along a vibrational energy transfer path and are amplitude amplified by the ultrasonic horn arrangement. One or more of the back mass, front mass and ultrasonic horn arrangement includes a plurality of openings opening towards the longitudinal axis and intersecting the vibrational energy transfer path and configured to provide an increased mechanical compliance in a direction along the vibrational energy transfer path.

    Micromachined Mechanical Part and Methods of Fabrication Thereof

    公开(公告)号:US20230296645A1

    公开(公告)日:2023-09-21

    申请号:US18014715

    申请日:2021-07-05

    CPC classification number: G01R1/06744 C23F4/00 G01R1/06755 G01R3/00

    Abstract: The present invention relates primarily to a method of fabrication of one or more free-standing micromachined parts. The method includes performing reactive ion etching of photoresist and tungsten-based layers supported on a carrier substrate to thereby define one or more micromachined parts, followed by separating the resulting one or more micromachined parts from the carrier substrate such that the parts are free-standing. The invention also relates to tungsten-based microprobe obtainable by such a method, wherein the microprobe has a substantially square or rectangular cross-section in a direction perpendicular to a longitudinal axis of the microprobe, and to probe cards comprising a plurality of such microprobes.

    Use of Polyoxometalate Mediators
    40.
    发明公开

    公开(公告)号:US20230183868A1

    公开(公告)日:2023-06-15

    申请号:US18086364

    申请日:2022-12-21

    CPC classification number: C25B1/04 H01M8/188

    Abstract: A method is disclosed of manufacturing a semiconductor structure comprising an (001) oriented zincblende structure group III-nitride layer, such as GaN. The layer is formed on a 3C-SiC layer on a silicon substrate. A nucleation layer is formed, recrystallized and then the zincblende structure group III-nitride layer is formed by MOVPE at temperature T3 in the range 750-1000° C., to a thickness of at least 0.5μ. There is also disclosed a corresponding semiconductor structure comprising a zincblende structure group III-nitride layer which, when characterized by XRD, shows that the substantial majority, or all, of the layer is formed of zincblende structure group III-nitride in preference to wurtzite structure group III-nitride.
    The present invention provides methods for producing hydrogen using a mediator that is capable of reversibly donating and accepting four or more electrons. A method of the invention comprises the steps of reducing a mediator by four or more electrons to yield a reduced mediator, and oxidising a reduced mediator to yield a mediator, and reducing protons to yield hydrogen.

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