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公开(公告)号:KR1020100101889A
公开(公告)日:2010-09-20
申请号:KR1020090020320
申请日:2009-03-10
Applicant: 주식회사 미뉴타텍 , 서울대학교산학협력단
Abstract: PURPOSE: A fabricating method for a germanium based film is provided to simplify the manufacturing process of the film, and to mass-produce a germanium monoxide film. CONSTITUTION: A fabricating method for a germanium based film comprises the following steps: condensing a germanium solution at the low-temperature process condition using a classification distillation method of a solvent adsorption method; adding a viscosity additive to the germanium solution to form a germanium mixture; spraying the germanium mixture to a substrate; and removing the moisture and organic compounds from the germanium mixture.
Abstract translation: 目的:提供一种锗基膜的制造方法,以简化膜的制造工艺,并大量生产一氧化锗膜。 构成:用于锗基膜的制造方法包括以下步骤:使用溶剂吸附法的分级蒸馏法在低温工艺条件下冷凝锗溶液; 向锗溶液中加入粘度添加剂以形成锗混合物; 将锗混合物喷涂到基材上; 并从锗混合物中除去水分和有机化合物。