公开(公告)号：KR1020100101889A

公开(公告)日：2010-09-20

申请号：KR1020090020320

申请日：2009-03-10

Applicant: 주식회사 미뉴타텍 ,  서울대학교산학협력단

Inventor： 이홍희 ,  탁동하

IPC: B32B9/00 ,  B32B19/02

CPC classification number: C08J5/18 ,  B05D1/02 ,  B05D1/18 ,  C08J7/04

Abstract: PURPOSE: A fabricating method for a germanium based film is provided to simplify the manufacturing process of the film, and to mass-produce a germanium monoxide film. CONSTITUTION: A fabricating method for a germanium based film comprises the following steps: condensing a germanium solution at the low-temperature process condition using a classification distillation method of a solvent adsorption method; adding a viscosity additive to the germanium solution to form a germanium mixture; spraying the germanium mixture to a substrate; and removing the moisture and organic compounds from the germanium mixture.

Abstract translation: 目的：提供一种锗基膜的制造方法，以简化膜的制造工艺，并大量生产一氧化锗膜。 构成：用于锗基膜的制造方法包括以下步骤：使用溶剂吸附法的分级蒸馏法在低温工艺条件下冷凝锗溶液; 向锗溶液中加入粘度添加剂以形成锗混合物; 将锗混合物喷涂到基材上; 并从锗混​​合物中除去水分和有机化合物。