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    IMPRINT LITHOGRAPHY
    32.
    发明申请
    IMPRINT LITHOGRAPHY 有权

    公开(公告)号：US20160377997A1

    公开(公告)日：2016-12-29

    申请号：US15258903

    申请日：2016-09-07

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Arie Jeffrey DEN BOEF ,  Andre Bernardus JEUNINK ,  Sander Frederik WUISTER ,  Yvonne Wendela KRUIJT-STEGEMAN

    IPC: G03F9/00 ,  G03F7/00

    CPC classification number: G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  G03F9/7042

    Abstract: A method of determining a position of an imprint template in an imprint lithography apparatus is disclosed. In an embodiment, the method includes illuminating an area of the imprint template in which an alignment mark is expected to be found by scanning an alignment radiation beam over that area, detecting an intensity of radiation reflected or transmitted from the area, and identifying the alignment mark via analysis of the detected intensity.

    Abstract translation: 公开了一种在压印光刻设备中确定压印模板的位置的方法。 在一个实施例中，该方法包括通过扫描在该区域上的对准辐射束来照射其中期望找到对准标记的压印模板的区域，检测从该区域反射或发射的辐射的强度，以及识别对准 通过分析检测到的强度来标记。

    Polarization Independent Interferometer
    33.
    发明申请
    Polarization Independent Interferometer 有权
    极化独立干涉仪

    公开(公告)号：US20160223920A1

    公开(公告)日：2016-08-04

    申请号：US15023075

    申请日：2014-09-11

    Applicant: ASML NETHERLANDS B.V. ,  ASML HOLDING N.V.

    Inventor： Patricius Aloysius Jacobus TINNEMANS ,  Arie Jeffrey DEN BOEF ,  Justin Lloyd KREUZER ,  Simon Gijsbert Josephus MATHIJSSEN

    IPC: G03F9/00 ,  G01B9/02 ,  G01B11/27

    CPC classification number: G03F9/7069 ,  G01B9/02011 ,  G01B9/02015 ,  G01B11/272 ,  G01B2290/70 ,  G03F9/7049 ,  G03F9/7088

    Abstract: Apparatus, systems, and methods are used for detecting the alignment of a feature on a substrate using a polarization independent interferometer. The apparatus, system, and methods include optical elements that receive light that has diffracted or scattered from a mark on a substrate. The optical elements may split the diffracted light into multiple subbeams of light which are detected by one or more detectors. The diffracted light may be combined optically or during processing after detection. The system may determine alignment and/or overlay based on the received diffracted light having any polarization angle or state.

    Abstract translation: 装置，系统和方法用于使用偏振无关干涉仪来检测基板上特征的对准。 该装置，系统和方法包括从基板上的标记衍射或散射的光的光学元件。 光学元件可以将衍射光分成由一个或多个检测器检测的多个子光束。 衍射光可以在光学上或在检测后的处理期间组合。 该系统可以基于接收到的具有任何偏振角或状态的衍射光来确定对准和/或覆盖。

    Inspection Apparatus, Inspection Method And Manufacturing Method
    34.
    发明申请
    Inspection Apparatus, Inspection Method And Manufacturing Method 有权
    检验仪器，检验方法及制造方法

    公开(公告)号：US20160061750A1

    公开(公告)日：2016-03-03

    申请号：US14838268

    申请日：2015-08-27

    Applicant: Vrije Universiteit Amsterdam ,  Universiteit van Amsterdam ,  Stichting voor Fundamenteel Onderzoek der Materie ,  ASML Netherlands B.V.

    Inventor： Arie Jeffrey DEN BOEF ,  Simon Gijsbert Josephus MATHIJSSEN ,  Nitesh PANDEY ,  Stefan Michiel WITTE ,  Kjeld EIKEMA

    IPC: G01N21/956 ,  G03F7/20 ,  G01B11/00

    CPC classification number: G01N21/956 ,  G01B11/00 ,  G01N2201/12 ,  G03F7/70141 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70641 ,  G03H1/0443 ,  G03H2001/0033 ,  G03H2001/0204 ,  G03H2001/0458

    Abstract: Metrology targets are formed on a substrate (W) by a lithographic process. A target (T) comprising one or more grating structures is illuminated with spatially coherent radiation under different conditions. Radiation (650) diffracted by from said target area interferes with reference radiation (652) interferes with to form an interference pattern at an image detector (623). One or more images of said interference pattern are captured. From the captured image(s) and from knowledge of the reference radiation a complex field of the collected scattered radiation at the detector. A synthetic radiometric image (814) of radiation diffracted by each grating is calculated from the complex field. From the synthetic radiometric images (814, 814′) of opposite portions of a diffractions spectrum of the grating, a measure of asymmetry in the grating is obtained. Using suitable targets, overlay and other performance parameters of the lithographic process can be calculated from the measured asymmetry.

    Abstract translation: 通过光刻工艺在基板（W）上形成计量目标。 包括一个或多个光栅结构的靶（T）在不同条件下被空间相干辐射照射。 从参考辐射（652）干涉的所述目标区域衍射的辐射（650）干扰以在图像检测器（623）处形成干涉图案。 捕获所述干涉图案的一个或多个图像。 从捕获的图像和参考辐射的知识中，在检测器处收集的散射辐射的复杂场。 从复场计算由每个光栅衍射的辐射的合成辐射图像（814）。 从光栅的衍射光谱的相对部分的合成辐射图像（814,814'）获得光栅中的不对称度。 使用合适的目标，可以从测量的不对称性计算光刻过程的覆盖层和其他性能参数。

    COMPUTATIONAL WAFER INSPECTION
    35.
    发明申请
    COMPUTATIONAL WAFER INSPECTION 有权
    计算水轮检查

    公开(公告)号：US20150356233A1

    公开(公告)日：2015-12-10

    申请号：US14730993

    申请日：2015-06-04

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Christophe David FOUQUET ,  Bernardo KASTRUP ,  Arie Jeffrey DEN BOEF ,  Johannes Catharinus Hubertus MULKENS ,  James Benedict KAVANAGH ,  James Patrick KOONMEN ,  Neal Patrick CALLAN

    IPC: G06F17/50 ,  H01L21/66

    CPC classification number: G06F17/5081 ,  G03F7/705 ,  G03F7/70525 ,  G03F7/7065 ,  G06F17/5009 ,  G06N7/005 ,  H01L22/20

    Abstract: Disclosed herein is a computer-implemented defect prediction method for a device manufacturing process involving processing a portion of a design layout onto a substrate, the method comprising: identifying a hot spot from the portion of the design layout; determining a range of values of a processing parameter of the device manufacturing process for the hot spot, wherein when the processing parameter has a value outside the range, a defect is produced from the hot spot with the device manufacturing process; determining an actual value of the processing parameter; determining or predicting, using the actual value, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the hot spot with the device manufacturing process.

    Abstract translation: 这里公开了一种用于设备制造过程的计算机实现的缺陷预测方法，该方法涉及将设计布局的一部分处理到衬底上，所述方法包括：从所述设计布局的所述部分中识别热点; 确定所述热点的装置制造过程的处理参数的值的范围，其中当所述处理参数具有超出所述范围的值时，通过所述装置制造过程从所述热点产生缺陷; 确定处理参数的实际值; 使用设备制造过程从热点产生的缺陷确定或预测使用实际值存在，存在概率，特性或其组合。

    Methods and Scatterometers, Lithographic Systems, and Lithographic Processing Cells
    36.
    发明申请
    Methods and Scatterometers, Lithographic Systems, and Lithographic Processing Cells 有权
    方法和散射仪，平版印刷系统和平版印刷加工单元

    公开(公告)号：US20140139814A1

    公开(公告)日：2014-05-22

    申请号：US14149723

    申请日：2014-01-07

    Applicant: ASML Netherlands B.V.

    Inventor： Hugo Augustinus Joseph CRAMER ,  Arie Jeffrey DEN BOEF ,  Henricus Johanne Lambertus MEGENS ,  Hendrik Jan Hidde SMILDE ,  Adrianus Johanne Hendrikus SCHELLEKENS ,  Michael KUBIS

    IPC: G03F7/20 ,  G01N21/88

    CPC classification number: G03F7/70641 ,  G01B11/02 ,  G01B11/22 ,  G01B11/24 ,  G01B11/30 ,  G01N21/47 ,  G01N21/88 ,  G03F7/70608 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/7065

    Abstract: In a method of determining the focus of a lithographic apparatus used in a lithographic process on a substrate, the lithographic process is used to form a structure on the substrate, the structure having at least one feature which has an asymmetry in the printed profile which varies as a function of the focus of the lithographic apparatus on the substrate. A first image of the periodic structure is formed and detected while illuminating the structure with a first beam of radiation. The first image is formed using a first part of non-zero order diffracted radiation. A second image of the periodic structure is formed and detected while illuminating the structure with a second beam of radiation. The second image is formed using a second part of the non-zero order diffracted radiation which is symmetrically opposite to the first part in a diffraction spectrum. The ratio of the intensities of the measured first and second portions of the spectra is determined and used to determine the asymmetry in the profile of the periodic structure and/or to provide an indication of the focus on the substrate. In the same instrument, an intensity variation across the detected portion is determined as a measure of process-induced variation across the structure. A region of the structure with unwanted process variation can be identified and excluded from a measurement of the structure.

    Abstract translation: 在确定在基板上的光刻工艺中使用的光刻设备的焦点的方法中，使用光刻工艺在基板上形成结构，该结构具有至少一个特征，该特征在印刷图案中具有不对称性 作为光刻设备在基板上的焦点的函数。 在用第一辐射束照射结构的同时形成和检测周期性结构的第一图像。 第一图像使用非零阶衍射辐射的第一部分形成。 在用第二辐射束照射结构的同时形成和检测周期性结构的第二图像。 使用在衍射光谱中与第一部分对称相对的非零级衍射辐射的第二部分形成第二图像。 确定测量的第一和第二部分光谱的强度的比率并用于确定周期性结构的轮廓的不对称性和/或提供焦点在基底上的指示。 在相同的仪器中，被检测部分的强度变化被确定为整个结构的过程引起的变化的量度。 可以从结构的测量中识别并排除具有不期望的工艺变化的结构区域。

    METHOD AND SYSTEM FOR DETERMINING INFORMATION ABOUT A TARGET STRUCTURE
    40.
    发明申请
    METHOD AND SYSTEM FOR DETERMINING INFORMATION ABOUT A TARGET STRUCTURE 有权

    公开(公告)号：US20220276569A1

    公开(公告)日：2022-09-01

    申请号：US17629053

    申请日：2020-07-17

    Applicant: ASML Netherlands B.V.

    Inventor： Arie Jeffrey DEN BOEF ,  Kaustuve BHATTACHARYYA ,  Keng-Fu CHANG ,  Simon Gijsbert Josephus MATHIJSSEN

    IPC: G03F7/20

    Abstract: Methods and systems for determining information about a target structure are disclosed. In one arrangement, a value of an asymmetry indicator for the target structure is obtained. The value of the asymmetry indicator represents an amount of an overlay independent asymmetry in the target structure. An error in an initial overlay measurement performed on the target structure at a previous time is estimated. The estimation is performed using the obtained value of the asymmetry indicator and a relationship between values of the asymmetry indicator and overlay measurement errors caused at least partially by overlay independent asymmetries. An overlay in the target structure is determined using the initial overlay measurement and the estimated error.

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