公开(公告)号：US20230205096A1

公开(公告)日：2023-06-29

申请号：US17927866

申请日：2021-05-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Xingyue PENG ,  Zhan SHI ,  Duan-Fu Stephen HSU ,  Rafael C. HOWELL ,  Gerui LIU

IPC: G03F7/20

CPC classification number: G03F7/705 ,  G03F7/706 ,  G03F7/70525

Abstract: Scanner aberration impact modeling in a semiconductor manufacturing process, which may facilitate co-optimization of multiple scanners. Scanner aberration impact modeling may include executing a calibrated model and controlling a scanner based on output from the model. The model is configured to receive patterning system aberration data. The model is calibrated with patterning system aberration calibration data and corresponding patterning process impact calibration data. New patterning process impact data may be determined, based on the model, for the received patterning system aberration data. The model includes a hyperdimensional function configured to correlate the received patterning system aberration data with the new patterning process impact data. The hyperdimensional function is configured to correlate the received patterning system aberration data with the new patterning process impact data in an approximation form, in lieu of a full simulation, without involving calculation of an aerial image or a representation thereof.

公开(公告)号：US20220011674A1

公开(公告)日：2022-01-13

申请号：US17479202

申请日：2021-09-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Duan-Fu Stephen HSU

IPC: G03F7/20 ,  G03F1/24

Abstract: A method to improve a lithographic process for imaging a portion of a patterning device pattern onto a substrate using a lithographic projection having an illumination system and projection optics, the method including: (1) obtaining a simulation model that models projection of radiation by the projection optics, wherein the simulation model models an effect of an obscuration in the projection optics, and configuring, based on the model, the portion of the patterning device pattern, and/or (2) obtaining a simulation model that models projection of radiation by the projection optics, wherein the simulation model models an anamorphic demagnification of radiation by the projection optics, and configuring, based on the model, the portion of the patterning device pattern taking into account an anamorphic manufacturing rule or anamorphic manufacturing rule ratio.

公开(公告)号：US20210232748A1

公开(公告)日：2021-07-29

申请号：US16336485

申请日：2017-10-23

Applicant: ASML Netherlands B.V.

Inventor： Duan-Fu Stephen HSU ,  Xiaoyang Jason Li

IPC: G06F30/398 ,  G03F7/20

Abstract: A method for optimizing a patterning device pattern, the method including obtaining an initial design pattern having a plurality of polygons, causing at least some of the polygons to be effectively connected with each other, placing evaluation features outside the boundaries of the polygons, and creating a patterning device pattern spanning across the connected polygons based on the evaluation features.

公开(公告)号：US20200041891A1

公开(公告)日：2020-02-06

申请号：US16485181

申请日：2018-02-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Duan-Fu Stephen HSU ,  Jingjing LIU

IPC: G03F1/24 ,  G03F7/20 ,  G03F1/36 ,  G03F1/38

Abstract: A patterning device, includes: an absorber layer on a patterning device substrate; and a reflective or transmissive layer on the patterning device substrate, wherein the absorber layer and the reflective or transmissive layer together define a pattern layout having a main feature and an attenuated sub-resolution assist feature paired with the main feature, wherein: the main feature is configured to generate, upon transferring the device pattern to a layer of patterning material on a substrate, the main feature in the layer of patterning material, and upon the transferring the pattern to the layer of patterning material, the attenuated sub-resolution assist feature is configured to avoid generating a feature in the layer of patterning material and to produce a different radiation intensity than the main feature.

公开(公告)号：US20190294053A1

公开(公告)日：2019-09-26

申请号：US16440485

申请日：2019-06-13

Applicant: ASML Netherlands B.V.

Inventor： Duan-Fu Stephen HSU ,  Kurt E. WAMPLER

IPC: G03F7/20 ,  G03F1/36

Abstract: Several methods of reducing one or more pattern displacement errors, contrast loss, best focus shift, tilt of a Bossung curve of a portion of a design layout used in a patterning process for imaging that portion onto a substrate using a lithographic apparatus. The methods include determining or adjusting one or more characteristics of one or more assist features using the one or more rules based on one or more parameters selected from a group consisting of: one or more characteristics of one or more design features in the portion, one or more characteristics of the patterning process, one or more characteristics of the lithographic apparatus, and/or a combination selected from the foregoing.