公开(公告)号：US20150064630A1

公开(公告)日：2015-03-05

申请号：US14391156

申请日：2013-03-19

Applicant: ASML Netherlands B.V.

Inventor： Sander Frederik Wuister ,  Emiel Peeters

IPC: G03F7/20 ,  C08L53/00

CPC classification number: G03F7/20 ,  B82Y10/00 ,  B82Y40/00 ,  C08L53/00 ,  G03F7/0002

Abstract: A method is disclosed to form a row of mutually spaced elongate lithography features along an axis on a substrate, for instance for use as contact electrodes for a NAND device. The method involves directing alignment of self-assemblable block copolymer (BCP) composition in a trench in a resist layer on the substrate, having the substrate as base, with an epitaxy feature in the trench to cause the ordered BCP layer to have elongate domains stretching across the trench width, substantially parallel to each other and to the substrate. The ordered BCP layer is then used as a resist to pattern the substrate. A BCP composition adapted to assemble with spaced discontinuous elongate elliptical domains is disclosed. The method may allow for sub-resolution contact arrays to be formed using UV lithography.

Abstract translation: 公开了一种形成沿衬底上的轴线的相互间隔的细长光刻特征行的方法，例如用作NAND器件的接触电极。 该方法包括将自组装嵌段共聚物（BCP）组合物引导到衬底上的抗蚀剂层的沟槽中，其具有衬底作为基底，在沟槽中具有外延特征，以使有序的BCP层具有伸长的畴伸长 横跨沟槽宽度，基本上彼此平行并且与基底平行。 然后将有序的BCP层用作抗蚀剂以对基底进行图案化。 公开了适于与间隔不连续的细长椭圆域组装的BCP组合物。 该方法可以允许使用UV光刻形成亚分辨率接触阵列。

公开(公告)号：US20150010869A1

公开(公告)日：2015-01-08

申请号：US14380911

申请日：2013-02-06

Applicant: ASML Netherlands B.V.

Inventor： Emiel Peeters ,  Wilhelmus Sebastianus Marcus Maria Ketelaars ,  Sander Frederik Wuister ,  Roelof Koole ,  Christianus Martinus Van Heesch ,  Aurelie Marie Andree Brizard ,  Henri Marie Joseph Boots ,  Thanh Trung Nguyen ,  Oktay Yildirim

IPC: G03F7/20 ,  G03F7/038

CPC classification number: G03F7/20 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/038 ,  G03F7/2002

Abstract: A method of forming a patterned chemical epitaxy template, for orientation of a self-assemblable block copolymer including first and second polymer blocks, on a surface of a substrate, the method including applying a primer layer of a primer composition to the surface, the primer composition including a first polymer moiety having a chemical affinity with the first polymer blocks and a second polymer moiety having a chemical affinity with the second polymer blocks, selectively exposing the surface, the primer layer and any overlying layer to actinic radiation to provide exposed and unexposed regions, to render labile the first polymer moiety in the exposed region, and removing the labile first polymer moiety from the exposed region to deplete the primer layer surface in the exposed region of first polymer moiety to form the patterned chemical epitaxy template.

Abstract translation: 一种形成图案化学外延模板的方法，用于在基材表面上包含第一和第二聚合物嵌段的自组装嵌段共聚物的取向，该方法包括将底漆组合物的底漆层施加到表面，引物 组合物，其包含与第一聚合物嵌段具有化学亲合力的第一聚合物部分和与第二聚合物嵌段具有化学亲合力的第二聚合物部分，选择性地将表面，底漆层和任何上覆层暴露于光化辐射以提供暴露和未曝光 使得暴露区域中的第一聚合物部分不稳定，以及从暴露区域除去不稳定的第一聚合物部分，以消除第一聚合物部分的暴露区域中的底漆层表面，以形成图案化的化学外延模板。

公开(公告)号：US12147162B2

公开(公告)日：2024-11-19

申请号：US18124350

申请日：2023-03-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Catharinus De Schiffart ,  Michael Jozef Mathijs Renkens ,  Gerard Van Schothorst ,  Andre Bernardus Jeunink ,  Gregor Edward Van Baars ,  Sander Frederik Wuister ,  Yvonne Wendela Kruijt-Stegeman ,  Norbert Erwin Therenzo Jansen ,  Toon Hardeman ,  George Arie Jan De Fockert ,  Johan Frederik Dijksman

IPC: G03F7/00 ,  G03F9/00

Abstract: An imprint lithography apparatus having a first frame to be mounted on a floor, a second frame mounted on the first frame via a kinematic coupling, an alignment sensor mounted on the second frame, to align an imprint lithography template arrangement with a target portion of a substrate, and a position sensor to measure a position of the imprint lithography template arrangement and/or a substrate stage relative to the second frame.

公开(公告)号：US20230222273A1

公开(公告)日：2023-07-13

申请号：US18118657

申请日：2023-03-07

Applicant: ASML NETHERLANDS B.V.

Inventor： Chrysostomos BATISTAKIS ,  Scott Anderson Middlebrooks ,  Sander Frederik Wuister

IPC: G06F30/28 ,  G03F7/20 ,  G06F119/14

CPC classification number: G06F30/28 ,  G03F7/705 ,  G06F2119/14

Abstract: A method involving obtaining a resist deformation model for simulating a deformation process of a pattern in resist, the resist deformation model being a fluid dynamics model configured to simulate an intrafluid force acting on the resist, performing, using the resist deformation model, a computer simulation of the deformation process to obtain a deformation of the developed resist pattern for an input pattern to the resist deformation model, and producing electronic data representing the deformation of the developed resist pattern for the input pattern.

公开(公告)号：US10890851B2

公开(公告)日：2021-01-12

申请号：US15828523

申请日：2017-12-01

Applicant: ASML NETHERLANDS B.V.

Inventor： Catharinus De Schiffart ,  Michael Jozef Mathijs Renkens ,  Gerard Van Schothorst ,  Andre Bernardus Jeunink ,  Gregor Edward Van Baars ,  Sander Frederik Wuister ,  Yvonne Wendela Kruijt-Stegeman ,  Norbert Erwin Therenzo Jansen ,  Toon Hardeman ,  George Arie Jan De Fockert ,  Johan Frederik Dijksman

IPC: G03F7/20 ,  G03F9/00

Abstract: An imprint lithography apparatus having a first frame to be mounted on a floor, a second frame mounted on the first frame via a kinematic coupling, an alignment sensor mounted on the second frame, to align an imprint lithography template arrangement with a target portion of a substrate, and a position sensor to measure a position of the imprint lithography template arrangement and/or a substrate stage relative to the second frame.

公开(公告)号：US10884333B2

公开(公告)日：2021-01-05

申请号：US14909057

申请日：2014-07-09

Applicant: ASML Netherlands B.V.

Inventor： Sander Frederik Wuister ,  Bart Laenens ,  Davide Ambesi

IPC: G03F1/70 ,  G03F7/00 ,  B81C1/00 ,  G06F30/392 ,  G06F30/398

Abstract: A method of design or verification for a self-assemblable block copolymer feature, the block copolymer feature including a first domain having a first polymer type and a second domain having a second polymer type, the method including, based on the length of the second polymer type or on an uncertainty in position of the first domain within the block copolymer feature calculated based on the length of the second polymer type, adjusting a parameter of the self-assembly process of a block copolymer feature or verifying a placement of a block copolymer feature.

公开(公告)号：US10712678B2

公开(公告)日：2020-07-14

申请号：US15046284

申请日：2016-02-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Yvonne Wendela Kruijt-Stegeman ,  Andre Bernardus Jeunink ,  Arie Jeffrey Den Boef ,  Vadim Yevgenyevich Banine ,  Michael Jozef Mathijs Renkens ,  Gerard Van Schothorst ,  Johan Frederik Dijksman ,  Carolus Johannes Catharina Schoormans ,  Adrianus Hendrik Koevoets ,  Catharinus De Schiffart ,  Sander Frederik Wuister

IPC: B29C43/58 ,  G03F9/00 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/00 ,  G03F7/20 ,  B29C43/02 ,  B29C59/02 ,  B29C59/16

Abstract: An imprint lithography apparatus is disclosed that includes an imprint template holder arranged to hold an imprint template, and a plurality of position sensors configured to measure change of the size and/or shape of the imprint template, wherein the position sensors are mechanically isolated from the imprint template. Also disclosed is a lithography method that includes using an imprint template to imprint a pattern onto a substrate, and measuring changes of the size and/or shape of the imprint template while imprinting the pattern onto the substrate.

公开(公告)号：US10654217B2

公开(公告)日：2020-05-19

申请号：US15865242

申请日：2018-01-08

Applicant: ASML NETHERLANDS B.V.

Inventor： Yvonne Wendela Kruijt-Stegeman ,  Raymond Jacobus Wilhelmus Knaapen ,  Johan Frederik Dijksman ,  Sander Frederik Wuister ,  Ivar Schram ,  Raymond Wilhelmus Louis Lafarre

IPC: B29C59/00 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/00 ,  B29C59/02

Abstract: An imprint lithography apparatus is disclosed that includes a support structure configured to hold an imprint template. The apparatus further includes an actuator located between the support structure and a side of the imprint template, when the imprint template is held by the support structure, configured to apply a force to the imprint template and a force sensor between the support structure and a side of the imprint template, when the imprint template is held by the support structure.

公开(公告)号：US10410914B2

公开(公告)日：2019-09-10

申请号：US15313515

申请日：2015-05-13

Applicant: ASML Netherlands B.V.

Inventor： Sander Frederik Wuister ,  Andre Bernardus Jeunink ,  Emiel Peeters

IPC: H01L21/768 ,  G03F7/00 ,  C30B1/04 ,  C30B29/58 ,  G03F7/20 ,  G03F7/30 ,  B81C1/00 ,  C09K13/00 ,  G03F7/004 ,  H01L21/027 ,  H01L21/308

Abstract: A method of forming at least one lithography feature, the method including: providing at least one lithography recess on a substrate, the or each lithography recess having at least one side-wall and a base, with the at least one side-wall having a width between portions thereof; providing a self-assemblable block copolymer having first and second blocks in the or each lithography recess; causing the self-assemblable block copolymer to self-assemble into an ordered layer within the or each lithography recess, the ordered layer including at least a first domain of first blocks and a second domain of second blocks; causing the self-assemblable block copolymer to cross-link in a directional manner; and selectively removing the first domain to form lithography features of the second domain within the or each lithography recess.

公开(公告)号：US10240250B2

公开(公告)日：2019-03-26

申请号：US14345891

申请日：2012-10-02

Applicant: ASML Netherlands B.V.

Inventor： Thanh Trung Nguyen ,  Jozef Maria Finders ,  Wilhelmus Sebastianus Marcus Maria Ketelaars ,  Sander Frederik Wuister ,  Eddy Cornelis Antonius Van der Heijden ,  Hieronymus Johannus Christiaan Meessen ,  Roelof Koole ,  Emiel Peeters ,  Christianus Martinus Van Heesch ,  Aurelie Marie Andree Brizard ,  Henri Marie Joseph Boots ,  Tamara Druzhinina ,  Jessica Margaretha De Ruiter

IPC: C30B1/12 ,  B81C1/00 ,  G03F7/00 ,  B82Y30/00 ,  H01L21/033

Abstract: A graphoepitaxy template to align a self-assembled block polymer adapted to self-assemble into a 2-D array having parallel rows of discontinuous first domains extending parallel to a first axis, mutually spaced along an orthogonal second axis, and separated by a continuous second domain. The graphoepitaxy template has first and second substantially parallel side walls extending parallel to and defining the first axis and mutually spaced along the second axis to provide a compartment to hold at least one row of discontinuous first domains of the self-assembled block copolymer on the substrate between and parallel to the side walls, and separated therefrom by a continuous second domain. The compartment has a graphoepitaxial nucleation feature arranged to locate at least one of the discontinuous first domains at a specific position within the compartment. Methods for forming the graphoepitaxy template and its use for device lithography are also disclosed.