公开(公告)号：US20230008139A1

公开(公告)日：2023-01-12

申请号：US17782622

申请日：2020-11-18

Applicant: ASML Holding N.V. ,  ASML Netherlands B.V.

Inventor： Mohamed SWILLAM ,  Simon Reinald HUISMAN ,  Justin Lloyd KREUZER

IPC: G03F7/20 ,  G03F9/00

Abstract: A detection system (200) includes an illumination system (210), a first optical system (232), a phase modulator (220), a lock-in detector (255), and a function generator (230). The illumination system is configured to transmit an illumination beam (218) along an illumination path. The first optical system is configured to transmit the illumination beam toward a diffraction target (204) on a substrate (202). The first optical system is further configured to transmit a signal beam including diffraction order sub-beams (222, 224, 226) that are diffracted by the diffraction target. The phase modulator is configured to modulate the illumination beam or the signal beam based on a reference signal. The lock-in detector is configured to collect the signal beam and to measure a characteristic of the diffraction target based on the signal beam and the reference signal. The function generator is configured to generate the reference signal for the phase modulator and the lock-in detector.

公开(公告)号：US20220350268A1

公开(公告)日：2022-11-03

申请号：US17765214

申请日：2020-09-25

Applicant: ASML HOLDING N.V. ,  ASML NETHERLANDS B.V.

Inventor： Tamer Mohamed Tawfik Ahmed Mohamed ELAZHARY ,  Robert John SOCHA ,  Stephen ROUX ,  Simon Reinald HUISMAN

IPC: G03F9/00 ,  G03F7/20 ,  G01B11/26

Abstract: A structure of a semiconductor device with a sub-segmented grating structure as a metrology mark and a method for configuring the metrology mark. The method for configuring a metrology mark may be used in a lithography process. The method may include determining an initial characteristic function of an initial metrology mark disposed within a layer stack. The method also includes perturbing one or more variables of the plurality of subsegments of the metrology mark (e.g., pitch, duty cycle, and/or line width of the plurality of subsegments) and further perturbing a thickness of one or more layers within the layer stack. The method further includes iteratively performing the perturbations until a minimized characteristic function of an initial metrology mark is determined to set a configuration for the plurality of subsegments.

公开(公告)号：US20200103772A1

公开(公告)日：2020-04-02

申请号：US16611500

申请日：2018-03-06

Applicant: ASML Netherlands B.V.

Inventor： Sebastianus Adrianus GOORDEN ,  Simon Reinald HUISMAN ,  Duygu AKBULUT ,  Alessandro POLO ,  Simon Gijsbert Josephus MATHIJSSEN

IPC: G03F9/00 ,  G03F7/20 ,  G01B11/27

Abstract: Disclosed is a metrology sensor apparatus and associated method. The metrology sensor apparatus comprises an illumination system operable to illuminate a metrology mark on a substrate with illumination radiation having a first polarization state and an optical collection system configured to collect scattered radiation, following scattering of the illumination radiation by the metrology mark. The metrology mark comprises a main structure and changes, relative to the first polarization state, at least one of a polarization state of a first portion of the scattered radiation predominately resultant from scattering by the main structure and a polarization state of a second portion of radiation predominately resultant from scattering by one or more features other than the main structure, such that the polarization state of the first portion of the scattered radiation is different to the polarization state of the second portion of the scattered radiation. The metrology sensor apparatus further comprises an optical filtering system which filters out the second portion of the scattered radiation based on its polarization state.

公开(公告)号：US20190212658A1

公开(公告)日：2019-07-11

申请号：US16325471

申请日：2017-06-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Simon Reinald HUISMAN ,  Simon Gijsbert Josephus MATHIJSSEN ,  Sebastianus Adrianus GOORDEN ,  Duygu AKBULUT ,  Alessandro POLO

IPC: G03F7/20 ,  G03F9/00

Abstract: An alignment sensor for a lithographic apparatus has an optical system configured to deliver, collect and process radiation selectively in a first waveband (e.g. 500-900 nm) and/or in a second waveband (e.g. 1500-2500 nm). The radiation of the first and second wavebands share a common optical path in at least some portion of the optical system, while the radiation of the first waveband is processed by a first processing sub-system and the radiation of the second waveband is processed by a second processing sub-system. The processing subsystems in one example include self-referencing interferometers. The radiation of the second waveband allows marks to be measured through an opaque layer. Optical coatings and other components of each processing sub-system can be tailored to the respective waveband, without completely duplicating the optical system.

公开(公告)号：US20190086201A1

公开(公告)日：2019-03-21

申请号：US16121780

申请日：2018-09-05

Applicant: ASML Netherlands B.V.

Inventor： Arie Jeffrey DEN BOEF ,  Simon Reinald HUISMAN

IPC: G01B11/27

Abstract: A method of determining a parameter of a patterning process applied to an object comprising two features (for example an overlay of the two features) comprises: irradiating the two features of the object with a radiation beam and receiving at least a portion of the radiation beam scattered from the two features of the object. The at least a portion of the radiation beam comprises: a first portion comprising at least one diffraction order and a second portion comprising at least one diffraction order that is different to a diffraction order of the first portion. The method further comprises moderating a phase difference between the first and second portions and combining the first and second portions such that they interfere to produce a time dependent intensity signal. The method further comprises determining the parameter of the patterning process from a contrast of the time dependent intensity signal.