公开(公告)号：WO2011072897A1

公开(公告)日：2011-06-23

申请号：PCT/EP2010/064663

申请日：2010-10-01

Applicant: ASML NETHERLANDS B.V. ,  WUISTER, Sander ,  DEN BOEF, Arie ,  KRUIJT-STEGEMAN, Yvonne

Inventor： WUISTER, Sander ,  DEN BOEF, Arie ,  KRUIJT-STEGEMAN, Yvonne

IPC: G03F7/00 ,  G03F9/00

CPC classification number: G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  G03F9/00 ,  Y10T428/24479

Abstract: An object provided with a particular alignment arrangement for use in aligning the object and a further object with respect to each other is disclosed. The alignment arrangement includes a first fine alignment mark in the form of a substantially regular grating, and a second coarse alignment mark located in the same area as the first alignment mark.

Abstract translation: 公开了一种具有特定对准装置的物体，用于将物体和另一物体相对于彼此对准。 对准布置包括基本上规则的格栅形式的第一精细对准标记和位于与第一对准标记相同的区域中的第二粗略对准标记。

公开(公告)号：EP2364462A2

公开(公告)日：2011-09-14

申请号：EP09783782.7

申请日：2009-10-06

Applicant: ASML Netherlands B.V. ,  Koninklijke Philips Electronics N.V.

Inventor： VAN DER TEMPEL, Leendert ,  DIJKSMAN, Johan ,  WUISTER, Sander ,  KRUIJT-STEGEMAN, Yvonne ,  LAMMERS, Jeroen ,  MUTSAERS, Cornelis

IPC: G03F7/00

CPC classification number: G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

Abstract: A method of imprint lithography involves the use of a void space in the substrate or imprint template. A gas pocket trapped between an imprint template and an imprintable, flowable medium on the substrate may lead to an irregularity once the imprintable medium has set. A void space allows the gas pocket to dissipate by flow or diffusion of gas into the void space, typically prior to setting the imprintable medium. A layer of solid porous medium as part of the imprint template, for instance as a layer forming or neighbouring the patterning surface of the template, may provide the void space. The void space of the porous layer acts as a void space into which the trapped gas can flow or diffuse. The substrate to be patterned may include a porous layer for the same purpose. A suitable solid porous medium includes a nanoporous silica.

公开(公告)号：EP2729844A1

公开(公告)日：2014-05-14

申请号：EP12725373.0

申请日：2012-05-30

Applicant: ASML Netherlands B.V.

Inventor： WUISTER, Sander ,  YAKUNIN, Andrei ,  KRIVTSUN, Vladimir

IPC: G03F7/004 ,  G03F7/075 ,  C08F30/08

CPC classification number: G03F7/0388 ,  C08F30/08 ,  G03F7/0043 ,  G03F7/0758 ,  G03F7/2002

Abstract: A lithographic process includes the use of a silicon-containing polymer or a compound that includes at least one element selected from the group consisting of: Ta, W, Re, Os, Ir, Ni, Cu or Zn in a resist material for an EUV lithographic process. The wavelength of the EUV light used in the process is less than 11 nm, for example 6.5-6.9 nm. The invention further relates to novel silicon-containing polymers.

公开(公告)号：EP2364462B1

公开(公告)日：2015-07-22

申请号：EP09783782.7

申请日：2009-10-06

Applicant: ASML Netherlands B.V. ,  Koninklijke Philips N.V.

Inventor： VAN DER TEMPEL, Leendert ,  DIJKSMAN, Johan ,  WUISTER, Sander ,  KRUIJT-STEGEMAN, Yvonne ,  LAMMERS, Jeroen ,  MUTSAERS, Cornelis

IPC: G03F7/00

CPC classification number: G03F7/0002 ,  B82Y10/00 ,  B82Y40/00