Lithography equipment and process for fabricating device
    34.
    发明专利
    Lithography equipment and process for fabricating device 有权
    雕刻设备和制作装置的过程

    公开(公告)号:JP2006313910A

    公开(公告)日:2006-11-16

    申请号:JP2006128497

    申请日:2006-05-02

    CPC classification number: G03F7/70341

    Abstract: PROBLEM TO BE SOLVED: To provide immersion lithography equipment suitable for preventing or reducing generation of bubbles by preventing bubbles from leaking to a radiation beam passage through one or more gaps in a substrate table, or by extracting bubbles possibly generated in the gap. SOLUTION: The lithography equipment is arranged to project an image of desired pattern onto a substrate W held on a substrate table WT through liquid. A gap 22 exists in the surface of the substrate table between the substrate table and the outer edge of the substrate, or between the substrate table and other component touching the liquid during normal use. The lithography equipment is provided, in the gap, with a bubble holding device arranged to hold a bubble 24 possibly generated in the gap. COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题:通过防止气泡通过衬底台中的一个或多个间隙而泄漏到辐射束通道中,或通过提取可能在间隙中产生的气泡来提供适于防止或减少气泡产生的浸没式光刻设备 。 解决方案:光刻设备被布置成通过液体将所需图案的图像投影到保持在基板台WT上的基板W上。 在衬底台与衬底的外边缘之间,或在正常使用过程中,在衬底台和其他部件接触液体之间,衬底台表面上存在间隙22。 光刻设备在间隙中设置有气泡保持装置,其被布置成保持可能在间隙中产生的气泡24。 版权所有(C)2007,JPO&INPIT

    Fluid handling structure, lithographic apparatus and device manufacturing method
    36.
    发明专利
    Fluid handling structure, lithographic apparatus and device manufacturing method 有权
    流体处理结构,平面设备和设备制造方法

    公开(公告)号:JP2013021332A

    公开(公告)日:2013-01-31

    申请号:JP2012154531

    申请日:2012-07-10

    CPC classification number: G03F7/70483 G03F7/70341

    Abstract: PROBLEM TO BE SOLVED: To provide a lithographic apparatus in which the likelihood of bubble inclusion is at least reduced.SOLUTION: A fluid handling structure for a lithographic apparatus comprises at a boundary from a space configured to contain immersion fluid to a region external to the fluid handling structure: meniscus pinning features to resist passage of immersion fluid in a radially outward direction from the space; a plurality of gas supply openings in a linear array; and at least one gas recovery opening placed radially outside of the plurality of gas supply openings in a linear array. The plurality of gas supply openings at least partly surround the meniscus pinning features, and are placed radially outside of the meniscus pinning features.

    Abstract translation: 要解决的问题:提供其中气泡夹杂的可能性至少降低的光刻设备。 解决方案:用于光刻设备的流体处理结构包括在从被配置为将浸没流体包含在流体处理结构外部的区域的边界处的边界处:弯月面钉扎特征以阻止浸没流体沿径向向外的方向从 空间; 线性阵列中的多个气体供给开口; 以及至少一个气体回收开口,其以多个气体供给开口径向外侧设置成线性阵列。 多个气体供应开口至少部分地围绕弯液面钉扎特征,并且被放置在半月板钉扎特征的径向外侧。 版权所有(C)2013,JPO&INPIT

    Lithographic apparatus and method of manufacturing device using lithographic apparatus
    37.
    发明专利
    Lithographic apparatus and method of manufacturing device using lithographic apparatus 有权
    平面设备和使用平面设备制造设备的方法

    公开(公告)号:JP2011187954A

    公开(公告)日:2011-09-22

    申请号:JP2011039323

    申请日:2011-02-25

    CPC classification number: G03B27/52

    Abstract: PROBLEM TO BE SOLVED: To reduce or remove the risk of focusing defects, and to maintain or increase throughput. SOLUTION: A liquid handling structure for a lithographic apparatus comprises a droplet controller configured to allow a droplet of immersion liquid to be lost from the handling structure and to prevent the droplet from colliding with the meniscus of the confined immersion liquid. The droplet controller may comprise gas knives arranged to overlap to block an incoming droplet. There may be extraction holes lined up with gaps between gas knives to extract liquid that passes through the gap. A droplet is allowed to escape through the gaps. COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题:减少或消除聚焦缺陷的风险,并维持或提高吞吐量。 解决方案:用于光刻设备的液体处理结构包括液滴控制器,其被配置为允许浸没液滴从处理结构中丢失并防止液滴与限制浸没液体的弯月面碰撞。 液滴控制器可以包括布置成重叠以阻挡进入的液滴的气刀。 在气刀之间可能存在排列有间隙的抽出孔,以提取通过间隙的液体。 允许液滴通过间隙逃逸。 版权所有(C)2011,JPO&INPIT

    Lithographic apparatus, and device manufacturing method
    38.
    发明专利
    Lithographic apparatus, and device manufacturing method 有权
    LITHOGRAPHIC设备和设备制造方法

    公开(公告)号:JP2011166151A

    公开(公告)日:2011-08-25

    申请号:JP2011026775

    申请日:2011-02-10

    CPC classification number: G03B27/52 G03F7/70341

    Abstract: PROBLEM TO BE SOLVED: To preferably provide a lithographic apparatus that prevents bubble from entering a projection beam when imaging.
    SOLUTION: A meniscus fixation device formed of a lower plate 12a of a fluid handling structure of an immersion lithographic projection apparatus has a plurality of openings 50 forming concentric circles, through which liquid and air from the environment are extracted, the plurality of openings 50 have a middle size whose diameter is about 75 to about 150 μm.
    COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题:优选地提供一种当成像时防止气泡进入投影束的光刻设备。 解决方案:由浸没式光刻投影装置的流体处理结构的下板12a形成的弯液面固定装置具有形成同心圆的多个开口50,来自环境的液体和空气通过该开口50被提取, 开口50具有直径为约75至约150μm的中等尺寸。 版权所有(C)2011,JPO&INPIT

    Lithographic apparatus and device manufacturing method
    39.
    发明专利
    Lithographic apparatus and device manufacturing method 有权
    LITHOGRAPHIC装置和装置制造方法

    公开(公告)号:JP2011124573A

    公开(公告)日:2011-06-23

    申请号:JP2010271352

    申请日:2010-12-06

    CPC classification number: G03F7/70341

    Abstract: PROBLEM TO BE SOLVED: To provide a lithographic apparatus capable of at least reducing the possibility of mixing of bubbles. SOLUTION: An immersion lithographic apparatus is disclosed. The immersion lithographic apparatus includes a fluid handling system which confines immersion liquid to be within a local space between a final element of a projection system and a substrate and/or a table, and a gas supply device which supplies gas of which solubility in the immersion liquid is higher than 5x10 -3 mol/kg, at a total pressure of 1 atm and 20°C into a region that adjoins the space. COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题:提供能够至少降低气泡混合的可能性的光刻设备。 解决方案:公开了一种浸没式光刻设备。 浸没式光刻设备包括将浸没液体限制在投影系统的最终元件与基板和/或台之间的局部空间内的流体处理系统,以及供应在浸没中的溶解度的气体的气体供应装置 液体高于5×10 -3 SPM / kg,在1atm和20℃的总压力下进入与该空间相邻的区域。 版权所有(C)2011,JPO&INPIT

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