Abstract:
PROBLEM TO BE SOLVED: To provide an antireflection film which is equipped with an antistatic function. SOLUTION: The antireflection film 1 is constituted by forming an antireflection film 5 composed of a laminated film of a high refractive index layer 4 and a low refractive index layer 3 on a surface of a substrate 2. The high refractive index layer 4 is made of a TiO 2 film in which a metallic element is doped. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a method for stably forming a ZnO film doped with N at a high speed. SOLUTION: This film-forming method comprises the steps of: placing a substrate 1 above targets 21a and 21b in a cover 26; evacuating the inside of the cover 26 with a pump; introducing a mixed gas of an inert gas such as argon blended with oxygen and nitrogen into the cover 26; applying pulse-packet voltage alternately to the first and second targets 21a and 21b made from Zn; making a PEM (plasma emission monitor) 31a and a PEM 31b detect the wavelength and intensity of emitted light from Zn by the discharge of the targets 21a and 21b when sputtered; calculating the sputtering rate of each of the targets 21a and 21b; and controlling a pulse power, the quantity of the pulses and a pulse width to be applied to each of the targets 21a and 21b, the quantity of oxygen and nitrogen to be introduced into the cover 26, and a pressure in the cover, on the basis of the calculated result. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a method for rapidly depositing a p-type transparent oxide film consisting of oxide containing a plurality of kinds of metals with the composition thereof accurately controlled, and a solar cell using the p-type transparent oxide film obtained by the film deposition method as a light absorbing layer. SOLUTION: A transparent substrate 1 is introduced in a cover 26, and mixed gas with oxygen contained in argon is introduced into the cover 26. The pulse-packet shaped voltage is alternately applied to target electrodes 20A, 20B at the predetermined period to form the glow discharge. Particles are sputtered from a target 21a consisting of copper and a target 21b consisting of aluminum, and a p-layer 3 consisting of a CuAlO 2 film is deposited on the substrate 1. The emission spectrum of plasma obtained via collimators 30a, 30b is formed into the electric signal, and taken in PEMs (Plasma Emission Monitor) 31a, 31b. The introducing flow rate of oxygen gas is controlled by using the PEMs 31a, 31b so that the emission intensity of copper and aluminum in plasma is always constant. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a manufacturing method of a dye-sensitized solar cell in which a filling process of an electrolytic solution is simplified, and also to provide the dye-sensitized solar cell manufactured by this manufacturing method of the dye-sensitized solar cell. SOLUTION: A dye-sensitized semiconductor electrode 11, a spacer 12, and opposed electrodes 13 are piled up in this order and inserted into a bag 15, and furthermore an electrolytic solution 14 is injected into the bag 15. This bag 15 is interposed between polymer films 16, and the polymer films 16 are pinch-pressed by a pinch-press part 17, and the pinch-press part 17 is moved from the bottom part side of the bag 15 toward the aperture part side. At this time, gas and a surplus electrolytic solution 14 move gradually upward according to the movement of the pinch-press part 17. Afterwards, a zipper 15a is completely closed, and the surroundings of the polymer films 16 are sealed. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a method of manufacturing silicon fine particles, capable of improving the yield of the silicon fine particles.SOLUTION: A method of manufacturing silicon fine particles includes process A for preparing powder that contains silicon particles, process B for cracking a mixed solution generated by adding the powder to an organic solvent, and process C for adding an etching solution to the cracked mixed solution to obtain silicon fine particles with smaller particle diameter than the silicon particle. The powder contains a plurality of silicon particles agglomerated.
Abstract:
PROBLEM TO BE SOLVED: To provide a negative electrode material for a nonaqueous electrolyte secondary battery, excellent in discharge rate characteristics by increasing conductivity, while a manufacturing process thereof is simplified, and a lithium ion secondary battery.SOLUTION: A negative electrode material for a nonaqueous electrolyte secondary battery according to the present invention incudes a complex including a silicon oxide SiOx (1≤x≤2) and a silicon nanoparticle Si, and the complex has a structure where the silicon nanoparticle is dispersed in the silicon oxide. At least one element included in group XIII elements and group XV elements in the periodic table is doped in the silicon nanoparticle, as a dopant.
Abstract:
PROBLEM TO BE SOLVED: To provide a negative electrode material for a nonaqueous electrolyte secondary battery, excellent in cycle characteristics while a manufacturing process thereof is simplified, and a lithium ion secondary battery.SOLUTION: A negative electrode material for a nonaqueous electrolyte secondary battery according to the present invention incudes a complex including a silicon oxide, a silicon nanoparticle and a silicon carbide nanoparticle, and the complex comprises a structure where the silicon nanoparticle and the silicon carbide nanoparticle are dispersed in the silicon oxide.
Abstract:
PROBLEM TO BE SOLVED: To provide a method for manufacturing a new resin material capable of more selecting a wavelength of light to be radiated, and the resin material.SOLUTION: This method for manufacturing the resin material includes: a step S1 of preparing a wavelength converting material, which absorbs light having a predetermined wavelength, and radiates light having another wavelength; and a step S2 of making a resin contain the wavelength converting material thus prepared. In the step S2 of preparing the wavelength converting material, nano-silicon fine particles 200 are prepared as the wavelength converting material.
Abstract:
PROBLEM TO BE SOLVED: To provide a Schottky junction element having desired characteristics while reducing the cost when the Schottky junction element is formed by laminating a metal oxide film and a conductive polymer film.SOLUTION: The Schottky junction element is constituted by laminating a metal oxide film containing at least tungsten-doped indium and having a previously controlled carrier concentration, and a conductive polymer film.
Abstract:
PROBLEM TO BE SOLVED: To provide a thin film transistor having higher performance by developing a semiconductor film, capable of being formed by a non-heating sputtering deposition method and further having superior amorphous performance and higher mobility. SOLUTION: The thin film transistor includes elements such as: three electrodes, i.e. a source electrode, a drain electrode and a gate electrode; a channel layer; and a gate insulating film. In the thin film transistor, the channel layer is formed of an indium oxide film that is doped with tungsten and zinc and/or tin. COPYRIGHT: (C)2011,JPO&INPIT