Antireflection film
    31.
    发明专利
    Antireflection film 有权
    抗反射膜

    公开(公告)号:JP2006337672A

    公开(公告)日:2006-12-14

    申请号:JP2005161581

    申请日:2005-06-01

    Abstract: PROBLEM TO BE SOLVED: To provide an antireflection film which is equipped with an antistatic function. SOLUTION: The antireflection film 1 is constituted by forming an antireflection film 5 composed of a laminated film of a high refractive index layer 4 and a low refractive index layer 3 on a surface of a substrate 2. The high refractive index layer 4 is made of a TiO 2 film in which a metallic element is doped. COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题:提供一种具有抗静电功能的抗反射膜。 解决方案:抗反射膜1通过在基板2的表面上形成由高折射率层4和低折射率层3的层叠膜构成的抗反射膜5构成。高折射率层4 由其中掺杂有金属元素的TiO 2 SB 2膜制成。 版权所有(C)2007,JPO&INPIT

    METHOD FOR FORMING N-DOPED ZnO FILM
    32.
    发明专利
    METHOD FOR FORMING N-DOPED ZnO FILM 审中-公开
    形成N掺杂ZnO薄膜的方法

    公开(公告)号:JP2006144053A

    公开(公告)日:2006-06-08

    申请号:JP2004333444

    申请日:2004-11-17

    Abstract: PROBLEM TO BE SOLVED: To provide a method for stably forming a ZnO film doped with N at a high speed.
    SOLUTION: This film-forming method comprises the steps of: placing a substrate 1 above targets 21a and 21b in a cover 26; evacuating the inside of the cover 26 with a pump; introducing a mixed gas of an inert gas such as argon blended with oxygen and nitrogen into the cover 26; applying pulse-packet voltage alternately to the first and second targets 21a and 21b made from Zn; making a PEM (plasma emission monitor) 31a and a PEM 31b detect the wavelength and intensity of emitted light from Zn by the discharge of the targets 21a and 21b when sputtered; calculating the sputtering rate of each of the targets 21a and 21b; and controlling a pulse power, the quantity of the pulses and a pulse width to be applied to each of the targets 21a and 21b, the quantity of oxygen and nitrogen to be introduced into the cover 26, and a pressure in the cover, on the basis of the calculated result.
    COPYRIGHT: (C)2006,JPO&NCIPI

    Abstract translation: 要解决的问题:提供一种稳定地形成掺杂有N的ZnO膜的方法。 解决方案:该成膜方法包括以下步骤:将靶材21a和21b上的基板1放置在盖26中; 用泵抽出盖子26的内部; 将与氧和氮混合的惰性气体如氩气的混合气体引入到盖26中; 将脉冲包电压交替地施加到由Zn制成的第一和第二目标21a和21b; 制造PEM(等离子体发射监测器)31a和PEM31b,当溅射时通过靶21a和21b的放电来检测来自Zn的发射光的波长和强度; 计算每个靶21a和21b的溅射速率; 并且控制脉冲功率,施加到目标21a和21b中的脉冲量和脉冲宽度,引入到盖26中的氧和氮的量以及盖中的压力,在 计算结果的基础。 版权所有(C)2006,JPO&NCIPI

    p-TYPE TRANSPARENT OXIDE FILM DEPOSITING METHOD, AND SOLAR CELL
    33.
    发明专利
    p-TYPE TRANSPARENT OXIDE FILM DEPOSITING METHOD, AND SOLAR CELL 有权
    p型透明氧化膜沉积方法和太阳能电池

    公开(公告)号:JP2006009084A

    公开(公告)日:2006-01-12

    申请号:JP2004187419

    申请日:2004-06-25

    CPC classification number: Y02E10/50

    Abstract: PROBLEM TO BE SOLVED: To provide a method for rapidly depositing a p-type transparent oxide film consisting of oxide containing a plurality of kinds of metals with the composition thereof accurately controlled, and a solar cell using the p-type transparent oxide film obtained by the film deposition method as a light absorbing layer. SOLUTION: A transparent substrate 1 is introduced in a cover 26, and mixed gas with oxygen contained in argon is introduced into the cover 26. The pulse-packet shaped voltage is alternately applied to target electrodes 20A, 20B at the predetermined period to form the glow discharge. Particles are sputtered from a target 21a consisting of copper and a target 21b consisting of aluminum, and a p-layer 3 consisting of a CuAlO 2 film is deposited on the substrate 1. The emission spectrum of plasma obtained via collimators 30a, 30b is formed into the electric signal, and taken in PEMs (Plasma Emission Monitor) 31a, 31b. The introducing flow rate of oxygen gas is controlled by using the PEMs 31a, 31b so that the emission intensity of copper and aluminum in plasma is always constant. COPYRIGHT: (C)2006,JPO&NCIPI

    Abstract translation: 解决问题的方法:提供一种快速沉积具有精确控制的组成的包含多种金属的氧化物的p型透明氧化膜的方法,以及使用该p型透明氧化物的太阳能电池 通过膜沉积法获得的膜作为光吸收层。 解决方案:将透明基板1引入盖26中,并将与氩气中所含的氧气的混合气体引入盖26中。脉冲包状电压以预定周期交替施加到目标电极20A,20B 以形成辉光放电。 从由铜构成的靶21a和由铝组成的靶21b上溅射粒子,在衬底1上沉积由CuAlO 2 膜组成的p层3,得到的等离子体的发射光谱 通过准直器30a,30b形成为电信号,并被采集在PEM(等离子体发射监测器)31a,31b中。 通过使用PEM 31a,31b来控制氧气的引入流量,使得等离子体中的铜和铝的发射强度总是恒定的。 版权所有(C)2006,JPO&NCIPI

    Dye-sensitized solar cell and its manufacturing method
    34.
    发明专利
    Dye-sensitized solar cell and its manufacturing method 审中-公开
    DYE-SENSITIZED SOLAR CELL及其制造方法

    公开(公告)号:JP2005228613A

    公开(公告)日:2005-08-25

    申请号:JP2004036499

    申请日:2004-02-13

    CPC classification number: Y02E10/542 Y02P70/521

    Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a dye-sensitized solar cell in which a filling process of an electrolytic solution is simplified, and also to provide the dye-sensitized solar cell manufactured by this manufacturing method of the dye-sensitized solar cell. SOLUTION: A dye-sensitized semiconductor electrode 11, a spacer 12, and opposed electrodes 13 are piled up in this order and inserted into a bag 15, and furthermore an electrolytic solution 14 is injected into the bag 15. This bag 15 is interposed between polymer films 16, and the polymer films 16 are pinch-pressed by a pinch-press part 17, and the pinch-press part 17 is moved from the bottom part side of the bag 15 toward the aperture part side. At this time, gas and a surplus electrolytic solution 14 move gradually upward according to the movement of the pinch-press part 17. Afterwards, a zipper 15a is completely closed, and the surroundings of the polymer films 16 are sealed. COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 解决的问题:提供简化电解液填充过程的染料敏化太阳能电池的制造方法,并且提供通过该染料的制造方法制造的染料敏化太阳能电池 敏化太阳能电池。 解决方案:将染料敏化半导体电极11,间隔物12和相对电极13依次堆积并插入袋15中,并且还将电解液14注入到袋15中。该袋15 插入在聚合物膜16之间,聚合物膜16被夹压部17挤压,夹压部17从袋15的底部侧朝向孔部侧移动。 此时,气体和剩余的电解液14根据夹压部17的移动而逐渐向上移动。之后,拉链15a完全关闭,聚合物膜16的周围被密封。 版权所有(C)2005,JPO&NCIPI

    Method of manufacturing silicon fine particle
    35.
    发明专利
    Method of manufacturing silicon fine particle 审中-公开
    制造硅精细颗粒的方法

    公开(公告)号:JP2013230946A

    公开(公告)日:2013-11-14

    申请号:JP2012102395

    申请日:2012-04-27

    Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing silicon fine particles, capable of improving the yield of the silicon fine particles.SOLUTION: A method of manufacturing silicon fine particles includes process A for preparing powder that contains silicon particles, process B for cracking a mixed solution generated by adding the powder to an organic solvent, and process C for adding an etching solution to the cracked mixed solution to obtain silicon fine particles with smaller particle diameter than the silicon particle. The powder contains a plurality of silicon particles agglomerated.

    Abstract translation: 要解决的问题:提供能够提高硅微粒的产率的硅微粒的制造方法。解决方案:制造硅微粒的方法包括制备含有硅颗粒的粉末的方法A,用于裂化的方法B 通过将粉末添加到有机溶剂中而产生的混合溶液,以及用于向裂化的混合溶液中添加蚀刻溶液以获得具有比硅颗粒小的粒子的硅微粒的方法C. 粉末含有多个聚集的硅颗粒。

    Negative electrode material for nonaqueous electrolyte secondary battery, and lithium ion secondary battery
    36.
    发明专利
    Negative electrode material for nonaqueous electrolyte secondary battery, and lithium ion secondary battery 审中-公开
    非电解二次电池负极电极材料和锂离子二次电池

    公开(公告)号:JP2013171629A

    公开(公告)日:2013-09-02

    申请号:JP2012033094

    申请日:2012-02-17

    CPC classification number: Y02E60/12

    Abstract: PROBLEM TO BE SOLVED: To provide a negative electrode material for a nonaqueous electrolyte secondary battery, excellent in discharge rate characteristics by increasing conductivity, while a manufacturing process thereof is simplified, and a lithium ion secondary battery.SOLUTION: A negative electrode material for a nonaqueous electrolyte secondary battery according to the present invention incudes a complex including a silicon oxide SiOx (1≤x≤2) and a silicon nanoparticle Si, and the complex has a structure where the silicon nanoparticle is dispersed in the silicon oxide. At least one element included in group XIII elements and group XV elements in the periodic table is doped in the silicon nanoparticle, as a dopant.

    Abstract translation: 要解决的问题:提供一种非水电解质二次电池用负极材料,其制造方法简单化时,通过增加导电性而具有优异的放电率特性,以及锂离子二次电池。解决方案:一种用于 根据本发明的非水电解质二次电池包括包含氧化硅SiO x(1≤x≤2)和硅纳米颗粒Si的复合物,并且该复合物具有将硅纳米颗粒分散在氧化硅中的结构。 作为掺杂剂,在硅纳米颗粒中掺杂了周期表中第XIII族元素和第XV族元素中的至少一种元素。

    Negative electrode material for nonaqueous electrolyte secondary battery, and lithium ion secondary battery
    37.
    发明专利
    Negative electrode material for nonaqueous electrolyte secondary battery, and lithium ion secondary battery 审中-公开
    非电解二次电池负极电极材料和锂离子二次电池

    公开(公告)号:JP2013171627A

    公开(公告)日:2013-09-02

    申请号:JP2012033074

    申请日:2012-02-17

    CPC classification number: Y02E60/12

    Abstract: PROBLEM TO BE SOLVED: To provide a negative electrode material for a nonaqueous electrolyte secondary battery, excellent in cycle characteristics while a manufacturing process thereof is simplified, and a lithium ion secondary battery.SOLUTION: A negative electrode material for a nonaqueous electrolyte secondary battery according to the present invention incudes a complex including a silicon oxide, a silicon nanoparticle and a silicon carbide nanoparticle, and the complex comprises a structure where the silicon nanoparticle and the silicon carbide nanoparticle are dispersed in the silicon oxide.

    Abstract translation: 要解决的问题:提供一种非水电解质二次电池用负极材料,其制造方法简化时的循环特性优异,锂离子二次电池的制造方法。非水电解质二次电池用负极材料, 本发明涉及包括氧化硅,硅纳米颗粒和碳化硅纳米颗粒的复合物,并且该复合物包括其中硅纳米颗粒和碳化硅纳米颗粒分散在氧化硅中的结构。

    Method for manufacturing resin material, and resin material
    38.
    发明专利
    Method for manufacturing resin material, and resin material 审中-公开
    制造树脂材料和树脂材料的方法

    公开(公告)号:JP2012097196A

    公开(公告)日:2012-05-24

    申请号:JP2010246125

    申请日:2010-11-02

    Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a new resin material capable of more selecting a wavelength of light to be radiated, and the resin material.SOLUTION: This method for manufacturing the resin material includes: a step S1 of preparing a wavelength converting material, which absorbs light having a predetermined wavelength, and radiates light having another wavelength; and a step S2 of making a resin contain the wavelength converting material thus prepared. In the step S2 of preparing the wavelength converting material, nano-silicon fine particles 200 are prepared as the wavelength converting material.

    Abstract translation: 要解决的问题:提供一种制造能够更多地选择要被辐射的光的波长的新的树脂材料的方法和树脂材料。 解决方案:制造树脂材料的方法包括:制备吸收具有预定波长的光并且辐射具有另一波长的光的波长转换材料的步骤S1; 并且使树脂含有如此制备的波长转换材料的步骤S2。 在制备波长转换材料的步骤S2中,制备纳米硅微粒200作为波长转换材料。 版权所有(C)2012,JPO&INPIT

    Schottky junction element using oxide semiconductor
    39.
    发明专利
    Schottky junction element using oxide semiconductor 审中-公开
    肖特基连接元件使用氧化物半导体

    公开(公告)号:JP2012069581A

    公开(公告)日:2012-04-05

    申请号:JP2010211033

    申请日:2010-09-21

    Abstract: PROBLEM TO BE SOLVED: To provide a Schottky junction element having desired characteristics while reducing the cost when the Schottky junction element is formed by laminating a metal oxide film and a conductive polymer film.SOLUTION: The Schottky junction element is constituted by laminating a metal oxide film containing at least tungsten-doped indium and having a previously controlled carrier concentration, and a conductive polymer film.

    Abstract translation: 要解决的问题:提供具有期望特性的肖特基接头元件,同时通过层压金属氧化物膜和导电聚合物膜而形成肖特基结元件时降低成本。 解决方案:肖特基结元件是通过层叠至少含有钨掺杂的铟并具有预先控制的载流子浓度的金属氧化物膜和导电聚合物膜构成的。 版权所有(C)2012,JPO&INPIT

    Thin film transistor
    40.
    发明专利
    Thin film transistor 审中-公开
    薄膜晶体管

    公开(公告)号:JP2010251606A

    公开(公告)日:2010-11-04

    申请号:JP2009101020

    申请日:2009-04-17

    Abstract: PROBLEM TO BE SOLVED: To provide a thin film transistor having higher performance by developing a semiconductor film, capable of being formed by a non-heating sputtering deposition method and further having superior amorphous performance and higher mobility.
    SOLUTION: The thin film transistor includes elements such as: three electrodes, i.e. a source electrode, a drain electrode and a gate electrode; a channel layer; and a gate insulating film. In the thin film transistor, the channel layer is formed of an indium oxide film that is doped with tungsten and zinc and/or tin.
    COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题:通过显影半导体膜来提供能够通过非加热溅射沉积方法形成并且还具有优异的非晶性能和更高迁移率的具有更高性能的薄膜晶体管。 解决方案:薄膜晶体管包括诸如:三个电极,即源电极,漏电极和栅电极的元件; 一个通道层; 和栅极绝缘膜。 在薄膜晶体管中,沟道层由掺杂有钨和锌和/或锡的氧化铟膜形成。 版权所有(C)2011,JPO&INPIT

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