中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

67 records (took 0.026 seconds)

    METHOD FOR MANUFACTURING ELECTRODES FOR ELECTRIC DOUBLE LAYER DEVICES BASED ON MIXTURE OF FIBROUS POLYMERIC MATERIAL AND CARBON MATERIAL
    31.
    发明申请
    METHOD FOR MANUFACTURING ELECTRODES FOR ELECTRIC DOUBLE LAYER DEVICES BASED ON MIXTURE OF FIBROUS POLYMERIC MATERIAL AND CARBON MATERIAL 审中-公开
    基于混合聚合材料和碳材料的电动双层器件制造电极的方法

    公开(公告)号：WO2009148493A3

    公开(公告)日：2010-03-25

    申请号：PCT/US2009003012

    申请日：2009-05-14

    Applicant: CORNING INC ,  GADKAREE KISHOR P ,  MACH JOSEPH F

    Inventor： GADKAREE KISHOR P ,  MACH JOSEPH F

    IPC: H01G9/058

    CPC classification number: H01G11/38 ,  H01G11/48 ,  Y02E60/13

    Abstract: The disclosure provides a method for manufacturing an electrode for a double layer device comprising contacting a fibrous polymeric material and a carbon material to form a mixture, contacting the mixture with a liquid to form a slurry, and then forming a layer comprising the slurry. Also disclosed are layers formed from the recited methods, electrodes comprising the layers, and electrical devices comprising the layers and/or electrodes.

    Abstract translation: 本公开提供了一种制造用于双层器件的电极的方法，包括使纤维聚合材料和碳材料接触以形成混合物，使混合物与液体接触以形成浆料，然后形成包含该浆料的层。 还公开了由所述方法形成的层，包括所述层的电极以及包括所述层和/或电极的电气装置。

    HIGH ENERGY DENSITY ULTRACAPACITOR
    32.
    发明申请
    HIGH ENERGY DENSITY ULTRACAPACITOR 审中-公开
    高能量密度超导体

    公开(公告)号：WO2009058226A3

    公开(公告)日：2009-12-17

    申请号：PCT/US2008012123

    申请日：2008-10-24

    Applicant: CORNING INC ,  GADKAREE KISHOR P ,  MACH JOSEPH F

    Inventor： GADKAREE KISHOR P ,  MACH JOSEPH F

    IPC: H01G9/058

    CPC classification number: H01G11/34 ,  H01G11/32 ,  H01G11/44 ,  H01G11/86 ,  Y02E60/13 ,  Y10T29/417 ,  Y10T29/53204

    Abstract: The invention is directed to a carbon composition produced from a carbon precursor, a carbon precursor modifier, and an additive, wherein a mixture of the recited components is formed, the carbon precursor is cured, the resulting mixture carbonized to produce a porous carbon composition. Also disclosed are methods for preparing the carbon composition and for using the carbon composition to fabricate electrodes and electric double layer capacitors comprising the carbon composition.

    Abstract translation: 本发明涉及由碳前体，碳前体改性剂和添加剂制备的碳组合物，其中形成所述组分的混合物，碳前体固化，所得混合物碳化以产生多孔碳组合物。 还公开了制备碳组合物和使用碳组合物制造包含碳组合物的电极和双电层电容器的方法。

    SEMICONDUCTOR ON GLASS INSULATOR WITH DEPOSITED BARRIER LAYER
    33.
    发明申请
    SEMICONDUCTOR ON GLASS INSULATOR WITH DEPOSITED BARRIER LAYER 审中-公开
    玻璃绝缘子与沉积障碍层的半导体

    公开(公告)号：WO2007024549A3

    公开(公告)日：2007-09-07

    申请号：PCT/US2006031726

    申请日：2006-08-15

    Applicant: CORNING INC ,  COUILLARD JAMES G ,  GADKAREE KISHOR P

    Inventor： COUILLARD JAMES G ,  GADKAREE KISHOR P

    IPC: H01L21/30

    CPC classification number: H01L21/76254

    Abstract: Methods and apparatus provide for: a silicon on insulator structure, comprising: a glass substrate; a layer of semiconductor material; and a deposited barrier layer of between about 60 nm to about 600 nm disposed between the glass substrate and the semiconductor material, where the glass substrate and semiconductor material are bonded together via electrolysis.

    Abstract translation: 方法和装置提供：绝缘体上硅结构，包括：玻璃基板; 一层半导体材料; 以及布置在玻璃基板和半导体材料之间的约60nm至约600nm之间的沉积阻挡层，其中玻璃基板和半导体材料通过电解结合在一起。

    GLASS-BASED SOI STRUCTURES
    34.
    发明申请
    GLASS-BASED SOI STRUCTURES 审中-公开
    基于玻璃的SOI结构

    公开(公告)号：WO2005029576A2

    公开(公告)日：2005-03-31

    申请号：PCT/US2004004746

    申请日：2004-02-17

    Applicant: CORNING INC ,  COUILLARD JAMES G ,  MACH JOSEPH F ,  GADKAREE KISHOR P

    Inventor： COUILLARD JAMES G ,  MACH JOSEPH F ,  GADKAREE KISHOR P

    IPC: H01L21/20 ,  H01L21/30 ,  H01L21/46 ,  H01L21/762

    CPC classification number: H01L21/76254 ,  H01L21/2007

    Abstract: Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer (15) of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate (20) composed of an oxide glass or an oxide glass-ceramic. The oxide glass or oxide glass-ceramic is preferably transparent and preferably has a strain point of less than 1000°C, a resistivity at 250°C that is less than or equal to 1016 -cm, and contains positive ions (e.g., alkali or alkaline-earth ions) which can move within the glass or glass-ceramic in response to an electric field at elevated temperatures (e.g., 300-1000°C). The bond strength between the semiconductor layer (15) and the support substrate (20) is preferably at least 8 joules/meter2. The semiconductor layer (15) can include a hybrid region (16) in which the semiconductor material has reacted with oxygen ions originating from the glass or glass-ceramic. The support substrate (20) preferably includes a depletion region (23) which has a reduced concentration of the mobile positive ions.

    Abstract translation: 提供了包括大面积SOI结构的绝缘体上半导体（SOI）结构，其具有一个或多个由连接到支撑衬底的基本上单晶半导体（例如，掺杂硅）的层（15）组成的区域 20）由氧化物玻璃或氧化物玻璃陶瓷构成。 氧化物玻璃或氧化物玻璃 - 陶瓷优选是透明的，并且优选具有小于1000℃的应变点，250℃下的电阻率小于或等于1016cm，并且包含正离子（例如碱或 碱土离子），其可以响应于在升高的温度（例如，300-1000℃）下的电场而在玻璃或玻璃陶瓷内移动。 半导体层（15）和支撑衬底（20）之间的结合强度优选为至少8焦耳/米2。 半导体层（15）可以包括混合区域（16），其中半导体材料已经与源自玻璃或玻璃陶瓷的氧离子反应。 支撑衬底（20）优选地包括具有降低的可移动正离子浓度的耗尽区（23）。

    ELECTRIC DOUBLE LAYER CAPACITORS, CAPACITOR MATERIALS AND METHODS OF MAKING THE SAME
    36.
    发明申请
    ELECTRIC DOUBLE LAYER CAPACITORS, CAPACITOR MATERIALS AND METHODS OF MAKING THE SAME 审中-公开
    电双层电容器，电容器材料及其制造方法

    公开(公告)号：WO2008013711A3

    公开(公告)日：2008-10-16

    申请号：PCT/US2007016259

    申请日：2007-07-18

    Applicant: CORNING INC ,  GADKAREE KISHOR P ,  MACH JOSEPH F

    Inventor： GADKAREE KISHOR P ,  MACH JOSEPH F

    IPC: H01G9/00

    CPC classification number: H01G11/38 ,  H01G11/34 ,  Y02E60/13 ,  Y10T29/417

    Abstract: Carbon materials and methods of manufacturing carbon materials for use in high energy devices, such as electric double layer capacitors are described. High energy devices manufactured with carbon materials contemplated herein have high energy density. Methods of manufacturing carbon materials generally include providing a carbon precursor and an additive, mixing the additive with the carbon precursor prior to curing the carbon precursor, carbonizing the carbon precursor and removing the additive to form the carbon material. Such carbon materials can be used in electric double layer capacitors.

    Abstract translation: 描述了用于高能量器件的碳材料和制造碳材料的方法，例如双电层电容器。 用本文考虑的碳材料制造的高能量器件具有高能量密度。 制造碳材料的方法通常包括提供碳前体和添加剂，在固化碳前体之前将添加剂与碳前体混合，碳化碳前体并除去添加剂以形成碳材料。 这种碳材料可用于双电层电容器中。

    IMAGE SENSOR USING THIN-FILM SOI
    39.
    发明申请
    IMAGE SENSOR USING THIN-FILM SOI 审中-公开
    使用薄膜SOI的图像传感器

    公开(公告)号：WO2008033508A2

    公开(公告)日：2008-03-20

    申请号：PCT/US2007020011

    申请日：2007-09-14

    Applicant: CORNING INC ,  BORRELLI NICHOLAS F ,  BRADY MICHAEL D ,  BURT RONALD L ,  GADKAREE KISHOR P

    Inventor： BORRELLI NICHOLAS F ,  BRADY MICHAEL D ,  BURT RONALD L ,  GADKAREE KISHOR P

    CPC classification number: H01L27/14692 ,  H01L21/76254 ,  H01L27/14618 ,  H01L27/1464 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Systems and methods related to an image sensor of one or more embodiments include subjecting a donor semiconductor wafer to an ion implantation process to create an exfoliation layer of semiconductor film on the donor semiconductor wafer, forming an anodic bond between the exfoliation layer and an insulator substrate by means of electrolysis; separating the exfoliation layer from the donor semiconductor wafer to transfer the exfoliation layer to the insulator substrate; and creating a plurality of image sensor features proximate to the exfoliation layer. Forming the anodic bonding by electrolysis may include the application of heat, pressure and voltage to the insulator structure and the exfoliation layer attached to the donor semiconductor wafer. Image sensor devices include an insulator structure, a semiconductor film, an anodic bond between them, and a plurality of image sensor features. The semiconductor film preferably comprises an exfoliation layer of a substantially single-crystal donor semiconductor wafer.

    Abstract translation: 涉及一个或多个实施例的图像传感器的系统和方法包括使施主半导体晶片经受离子注入工艺以在施主半导体晶片上产生半导体膜的剥离层，在剥离层和绝缘衬底之间形成阳极键合 通过电解; 从供体半导体晶片分离剥离层以将剥离层转移到绝缘基板; 以及在剥离层附近产生多个图像传感器特征。 通过电解形成阳极键合可以包括向绝缘体结构和附着于施主半导体晶片的剥离层施加热，压力和电压。 图像传感器装置包括绝缘体结构，半导体膜，它们之间的阳极键以及多个图像传感器特征。 该半导体膜优选包括基本上单晶施主半导体晶片的剥离层。

    ACTIVATED CARBON HONEYCOMB CATALYST BEDS AND METHODS FOR THE MANUFACTURE OF SAME
    40.
    发明申请
    ACTIVATED CARBON HONEYCOMB CATALYST BEDS AND METHODS FOR THE MANUFACTURE OF SAME 审中-公开
    活性炭蜂窝状催化剂床及其制造方法

    公开(公告)号：WO2007133568A3

    公开(公告)日：2008-02-28

    申请号：PCT/US2007011156

    申请日：2007-05-09

    Applicant: CORNING INC ,  GADKAREE KISHOR P ,  SHI YOUCHUN

    Inventor： GADKAREE KISHOR P ,  SHI YOUCHUN

    IPC: B01D53/86 ,  B01D53/02 ,  B01D53/64 ,  B01J20/20 ,  B01J20/32 ,  C01B31/08

    CPC classification number: B01D53/8665 ,  B01D53/02 ,  B01D53/64 ,  B01D2253/3425 ,  B01D2255/702 ,  B01D2257/60 ,  B01D2257/602 ,  B01D2259/41

    Abstract: The invention concerns activated carbon honeycomb catalyst beds for removing mercury and other toxic metals from flue gas of a coal combustion system. The activated carbon honeycomb can remove greater than 90% mercury from flue gas with, a simple design and without adding material to the flue gas. A method for manufacturing the activated carbon honeycomb catalyst bed involves providing a honeycomb precursor batch composition comprising a synthetic carbon precursor and at least one toxic metal adsorption co-catalyst, shaping the batch composition to form a honeycomb green body, curing, heat treating and activating the carbonized synthetic carbon precursor.

    Abstract translation: 本发明涉及用于从煤燃烧系统的烟道气中除去汞和其它有毒金属的活性炭蜂窝催化剂床。 活性炭蜂窝可以从烟道气中去除大于90％的汞，其设计简单，不会向烟气中添加物质。 一种制造活性炭蜂窝催化剂床的方法，包括提供包含合成碳前体和至少一种有毒金属吸附助催化剂的蜂窝状前体批料组合物，成型批料组合物以形成蜂窝状生坯，固化，热处理和活化 碳化合成碳前体。

Patent Agency Ranking