公开(公告)号：EP1514335A2

公开(公告)日：2005-03-16

申请号：EP03727457.8

申请日：2003-05-08

Applicant: Forschungsverbund Berlin e.V.

Inventor： RESSEL, Peter ,  ERBERT, Götz

IPC: H01S5/028

CPC classification number: H01S5/028 ,  H01S5/0281 ,  H01S5/0282

Abstract: The aim of the invention is to simplify known passivation methods. According to said method, the semi-conductor elements are heated and cleaned in a high vacuum with a gaseous, reactive low-energy medium. A closed, insulating or slightly conductive, transparent protective layer is applied in-situ, said layer being inert in relation to the material on the mirror-type surface and the remaining components of a natural oxide. In a preferred embodiment, the optical semi-conductor element is a GaAs-based semi-conductor laser, the reactive and low-energy medium is an atomic hydrogen and the protective layer is made of ZnSe.