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    Pattern forming method and resist composition
    31.
    发明专利
    Pattern forming method and resist composition 有权
    图案形成方法和阻力组成

    公开(公告)号：JP2012027438A

    公开(公告)日：2012-02-09

    申请号：JP2011029622

    申请日：2011-02-15

    Applicant: Fujifilm Corp ,  富士フイルム株式会社

    Inventor： IWATO KAORU ,  KATAOKA SHOHEI ,  TARUYA SHINJI ,  KAMIMURA SATOSHI ,  KATO KEITA ,  ENOMOTO YUICHIRO ,  MIZUTANI KAZUYOSHI ,  DOBASHI TORU ,  FUJII KANA

    IPC: G03F7/038 ,  C08F220/28 ,  C08F232/00 ,  G03F7/039 ,  G03F7/32 ,  H01L21/027

    CPC classification number: G03F7/0045 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0395 ,  G03F7/0397 ,  G03F7/0757 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/325 ,  Y10T428/24479

    Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method excellent in sensitivity, limit resolution, roughness properties, exposure latitude (EL), post exposure bake (PEB) temperature dependency and depth of focus (DOF), and a resist composition.SOLUTION: A pattern forming method of the invention comprises: (A) forming a film using a resin-containing resist composition, which includes a repeating unit with a group that is decomposed by an action of an acid to produce an alcoholic hydroxy group and in which its solubility in a developer containing an organic solvent decreases by an action of an acid; (B) exposing the film; and (C) developing the exposed film using a developer containing an organic solvent.

    Abstract translation: 要解决的问题：提供灵敏度，极限分辨率，粗糙度特性，曝光宽容度（EL），曝光后烘烤（PEB）温度依赖性和聚焦深度（DOF）以及抗蚀剂组合物优异的图案形成方法 。 解决方案：本发明的图案形成方法包括：（A）使用含树脂的抗蚀剂组合物形成膜，该组合物包括具有通过酸作用分解的基团的重复单元以产生醇羟基 并且其中在含有机溶剂的显影剂中的溶解度通过酸的作用而降低; （B）曝光胶片; 和（C）使用含有有机溶剂的显影剂显影曝光的薄膜。 版权所有（C）2012，JPO＆INPIT

    Active light-sensitive or radiation-sensitive resin composition and pattern forming method using the same
    32.
    发明专利
    Active light-sensitive or radiation-sensitive resin composition and pattern forming method using the same 有权
    主动感光或辐射敏感性树脂组合物和使用其的图案形成方法

    公开(公告)号：JP2011053360A

    公开(公告)日：2011-03-17

    申请号：JP2009200869

    申请日：2009-08-31

    Applicant: Fujifilm Corp ,  富士フイルム株式会社

    Inventor： KOSHIJIMA KOSUKE ,  SHIBUYA AKINORI ,  YAMAGUCHI SHUHEI ,  KATAOKA SHOHEI

    IPC: G03F7/039 ,  G03F7/004 ,  G03F7/38 ,  H01L21/027

    Abstract: PROBLEM TO BE SOLVED: To provide an active light-sensitive or radiation-sensitive resin composition that has good line width roughness (LWR) performance and forms a pattern with suppressed application defects, and to provide a pattern forming method using the same. SOLUTION: The active light-sensitive or radiation-sensitive resin composition contains the following (A) to (D). (A) A resin of which the solubility in an alkali developing solution is increased by the action of an acid; (B) a compound which is based on a sulfonium salt of specific structure and generates an acid by application of active light or radiation; (C) a resin having a polar conversion group of which the solubility in an alkali developing solution is increased when decomposed by the action of at least any of a fluorine atom and a silicon atom, and an alkali developing solution; and (D) a mixed solvent comprising two or more solvents, which contains at least one solvent selected from the solvent group having specific structure The total content of the solvent is 1-20 mass% in the whole solvents. COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：提供具有良好的线宽粗糙度（LWR）性能并形成具有抑制应用缺陷的图案的主动感光或辐射敏感性树脂组合物，并提供使用其的图案形成方法 。 解决方案：活性光敏或辐射敏感性树脂组合物含有下列（A）至（D）。 （A）通过酸的作用使在碱性显影液中的溶解度增加的树脂; （B）基于特定结构的锍盐并通过施加活性光或辐射产生酸的化合物; （C）具有极性转化基团的树脂，其通过至少任何一种氟原子和硅原子的作用而在碱性显影液中的溶解度增加;和碱性显影液; 和（D）包含两种或更多种溶剂的混合溶剂，其含有选自具有特定结构的溶剂组中的至少一种溶剂。溶剂的总含量在整个溶剂中为1-20质量％。 版权所有（C）2011，JPO＆INPIT

    Active light-sensitive or radiation-sensitive resin composition, and pattern formation method using the same
    34.
    发明专利
    Active light-sensitive or radiation-sensitive resin composition, and pattern formation method using the same 有权
    活性敏感性或辐射敏感性树脂组合物和使用其的图案形成方法

    公开(公告)号：JP2014157358A

    公开(公告)日：2014-08-28

    申请号：JP2014053073

    申请日：2014-03-17

    Applicant: Fujifilm Corp ,  富士フイルム株式会社

    Inventor： IWATO KAORU ,  KATAOKA SHOHEI ,  TARUYA SHINJI ,  KAMIMURA SATOSHI ,  ENOMOTO YUICHIRO ,  FUJII KANA ,  KATO KEITA ,  DOBASHI TORU ,  MIZUTANI KAZUYOSHI

    IPC: G03F7/039 ,  G03F7/004 ,  G03F7/038

    Abstract: PROBLEM TO BE SOLVED: To provide an active light-sensitive or a radiation-sensitive resin composition excellent in development defect performance, immersion defect performance and marginal resolving power, and capable of forming a pattern having a good shape, and to provide a pattern formation method using the same.SOLUTION: There is provided an active light-sensitive or a radiation-sensitive resin composition containing: a resin which has a reduced solubility to a developer containing an organic solvent by an action of an acid, has a repeating unit (P) having a group generating an alcoholic hydroxyl group by degradation by action of the acid, and has no fluorine atom and/or an aromatic group; a compound generating the acid by irradiation of an active light or radiation rays; and a hydrophobic resin. The active light-sensitive or the radiation-sensitive resin composition contains at least a compound generating the acid containing no fluorine atom by irradiation of the active light or the radiation rays as the compound generating the acid by irradiation of the active light or the radiation rays.

    Abstract translation: 要解决的问题：提供显影缺陷性能，浸渍缺陷性能和边缘分辨能力优异的活性光敏性或辐射敏感性树脂组合物，并且能够形成具有良好形状的图案，并提供图案形成 提供了一种有效的光敏性或辐射敏感性树脂组合物，其含有：通过酸作用使含有有机溶剂的显影剂的溶解性降低的树脂具有重复单元（ P）具有通过酸作用而降解而产生醇羟基的基团，并且不具有氟原子和/或芳族基团; 通过活性光或辐射线的照射产生酸的化合物; 和疏水性树脂。 活性感光性树脂组合物或辐射敏感性树脂组合物至少含有通过照射活性光或辐射线而产生不含氟原子的酸的化合物，作为通过照射活性光或辐射线产生酸的化合物 。

    Actinic ray-sensitive or radiation-sensitive resin composition, resist film and pattern forming method using the composition, method for manufacturing electronic device, and electronic device
    35.
    发明专利
    Actinic ray-sensitive or radiation-sensitive resin composition, resist film and pattern forming method using the composition, method for manufacturing electronic device, and electronic device 有权
    丙烯酸类敏感性或辐射敏感性树脂组合物，耐腐蚀膜和使用组合物的图案形成方法，制造电子器件的方法和电子器件

    公开(公告)号：JP2014130280A

    公开(公告)日：2014-07-10

    申请号：JP2012288967

    申请日：2012-12-28

    Applicant: Fujifilm Corp ,  富士フイルム株式会社

    Inventor： KOJIMA MASASHI ,  SHIBUYA AKINORI ,  GOTO AKIYOSHI ,  KATAOKA SHOHEI ,  KOSHIJIMA KOSUKE

    IPC: G03F7/004 ,  C07C309/06 ,  C07C309/12 ,  C07C309/17 ,  C07C381/12 ,  C07D217/08 ,  C07D279/12 ,  C07D327/06 ,  C07D333/08 ,  C07D333/76 ,  C07D335/02 ,  C09K3/00 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

    CPC classification number: G03F7/0045 ,  C07D279/12 ,  C07D327/06 ,  C07D333/46 ,  C07D335/02 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041

    Abstract: PROBLEM TO BE SOLVED: To provide an actinic ray-sensitive or radiation-sensitive resin composition which causes little generation of particles in formation of a fine pattern (for example, a pattern having a width of 45 nm or less) even when a resist solution is stored for a long period of time, which permits the formation of a resist pattern in a good shape, and which shows high sensitivity and causes little generation of development defects even when the resist solution is used after long-term storage, and to provide a resist film and a pattern forming method using the composition, and a method for manufacturing electronic device and an electronic device.SOLUTION: An actinic ray-sensitive or radiation-sensitive resin composition comprises a compound (A) that generates an acid by irradiation with actinic rays or radiation, wherein the compound has such properties that, when a relative absorbance and relative quantum efficiency are denoted by εr and φr, respectively, on a basis of those in triphenylsulfonium nonaflate, the relative absorbance εr of the compound ranges from 0.4 to 0.8 and εr×φr ranges from 0.5 to 1.0.

    Abstract translation: 要解决的问题：为了提供光敏性或辐射敏感性树脂组合物，即使在抗蚀剂溶液中产生微细图案（例如，宽度为45nm以下的图案） 长时间储存​​，可以形成具有良好形状的抗蚀剂图案，即使在长期保存后使用抗蚀剂溶液也显示出高灵敏度并且几乎不产生显影缺陷，并且提供 抗蚀剂膜和使用该组合物的图案形成方法以及电子器件和电子器件的制造方法。光化学射线敏感或辐射敏感性树脂组合物包含通过照射产生酸的化合物（A） 光化射线或辐射，其中所述化合物具有这样的性质，即当相对吸光度和相对量子效率分别用＆egr r和＆phgr; r表示时， 在三苯基锍非海洛因中，化合物的相对吸光度和浓度范围为0.4至0.8，＆rdquo; r×＆phgr。r的范围为0.5至1.0。

    Pattern forming method, method for manufacturing electronic device, and electronic device
    36.
    发明专利
    Pattern forming method, method for manufacturing electronic device, and electronic device 有权
    图案形成方法，制造电子装置的方法和电子装置

    公开(公告)号：JP2014038290A

    公开(公告)日：2014-02-27

    申请号：JP2012181891

    申请日：2012-08-20

    Applicant: Fujifilm Corp ,  富士フイルム株式会社

    Inventor： SHIBUYA AKINORI ,  KATAOKA SHOHEI ,  MATSUDA TOMOKI ,  FUKUHARA TOSHIAKI ,  GOTO AKIYOSHI

    IPC: G03F7/038 ,  C07C211/29 ,  C07C309/12 ,  C07C309/17 ,  C07C309/19 ,  C07C381/12 ,  G03F7/004 ,  G03F7/039 ,  G03F7/32 ,  H01L21/027

    CPC classification number: G03F7/30 ,  C07C381/12 ,  C08F220/18 ,  C08F220/24 ,  C08F220/26 ,  C08F220/38 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/0388 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/325 ,  H01L21/0274

    Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method by which excellent line width roughness and mask fidelity can be achieved in a process of forming an ultrafine isolated space pattern (with a space width of 60 nm or less, for example), generation of particles can be decreased even when a resist solution is stored for a long time, and thereby, a favorable pattern can be formed, and to provide a method for manufacturing an electronic device and an electronic device using the above pattern forming method.SOLUTION: The pattern forming method includes steps of: (1) forming a film of a radiation-sensitive or actinic ray-sensitive resin composition containing (A) an onium salt compound having a nitrogen atom in a cation moiety, (B) a compound that generates an acid by irradiation with actinic rays or radiation and (C) a resin showing increase in the polarity by an action of an acid to decrease solubility with a developing solution containing an organic solvent; (2) exposing the film; and (3) developing the film by using a developing solution containing an organic solvent to form a negative pattern.

    Abstract translation: 要解决的问题：提供一种在形成超细孤立空间图案（例如，具有60nm或更小的空间宽度）的工艺中可以实现优异的线宽粗糙度和掩模保真度的图案形成方法， 即使长时间存储抗蚀剂溶液也能够降低颗粒，从而可以形成良好的图案，并提供使用上述图案形成方法制造电子设备和电子设备的方法。解决方案： 图案形成方法包括以下步骤：（1）形成辐射敏感或光化射线敏感性树脂组合物的膜，其含有（A）阳离子部分中具有氮原子的鎓盐化合物，（B） 通过用光化射线或辐射照射的酸;（C）通过酸的作用显示极性增加的树脂，以降低与含有机溶剂的显影溶液的溶解度; （2）曝光胶片; 和（3）通过使用含有有机溶剂的显影溶液显影以形成负图案。

    Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same
    38.
    发明专利
    Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same 审中-公开
    化学敏感性或辐射敏感性树脂组合物和使用其的图案形成方法

    公开(公告)号：JP2013167731A

    公开(公告)日：2013-08-29

    申请号：JP2012030486

    申请日：2012-02-15

    Applicant: Fujifilm Corp ,  富士フイルム株式会社

    Inventor： SHIBUYA AKINORI ,  TOKUGAWA YOKO ,  MATSUDA TOMOKI ,  ITO JUNICHI ,  KATAOKA SHOHEI ,  FUKUHARA TOSHIAKI ,  TANGO NAOHIRO ,  IWATO KAORU ,  YOSHITOME MASAHIRO ,  SUGIYAMA SHINICHI

    IPC: G03F7/004 ,  C08F220/26 ,  G03F7/038

    Abstract: PROBLEM TO BE SOLVED: To provide an actinic ray-sensitive or radiation-sensitive resin composition capable of suppressing pattern collapse and improving LWR (line width roughness) and storage stability, and a pattern forming method using the composition.SOLUTION: An actinic ray-sensitive or radiation-sensitive resin composition comprises: (A) resin having a repeating unit expressed by the following general formula (1) and a repeating unit that is decomposed by an action of an acid to increase the solubility in an alkali developing solution; (B) a compound Rincluding at least one nitrogen atom or a compound which is an ionic compound including a basic moiety Rincluding at least one nitrogen atom, both having such a property that R-Hor R-Has conjugated acids thereof has a pKa of 8 or lower; and (C) a compound that generates an acid by irradiation with actinic rays or radiation. In the general formula (1), L represents a single bond or a divalent connecting group; Rrepresents a hydrogen atom or an alkyl group; and Z represents a cyclic acid anhydride structure.

    Abstract translation: 要解决的问题：提供能够抑制图案塌陷并提高LWR（线宽粗糙度）和保存稳定性的光化射线敏感性或辐射敏感性树脂组合物以及使用该组合物的图案形成方法。解决方案： 敏感或辐射敏感性树脂组合物包含：（A）具有由以下通式（1）表示的重复单元的树脂和通过酸作用分解以提高在碱性显影液中的溶解度的重复单元; （B）包含至少一个氮原子的化合物或作为包含碱性部分的离子化合物的化合物包含至少一个氮原子的化合物，其具有R-Hor R-has共轭酸的pKa为8的性质 或更低; 和（C）通过用光化射线或辐射照射产生酸的化合物。 在通式（1）中，L表示单键或二价连接基团; R表示氢原子或烷基; Z表示环状酸酐结构。

    Actinic ray sensitive or radiation sensitive resin composition, and resist film, pattern forming method, method for manufacturing electronic device and electronic device using the same
    39.
    发明专利
    Actinic ray sensitive or radiation sensitive resin composition, and resist film, pattern forming method, method for manufacturing electronic device and electronic device using the same 有权
    化学敏感性或辐射敏感性树脂组合物，耐蚀膜，图案形成方法，制造电子器件的方法和使用其的电子器件

    公开(公告)号：JP2013068775A

    公开(公告)日：2013-04-18

    申请号：JP2011207015

    申请日：2011-09-22

    Applicant: Fujifilm Corp ,  富士フイルム株式会社

    Inventor： YOSHINO FUMIHIRO ,  TAKAHASHI HIDETOMO ,  YAMAGUCHI SHUHEI ,  KATAOKA SHOHEI ,  SHIRAKAWA MICHIHIRO ,  SAITO SHOICHI

    IPC: G03F7/038 ,  G03F7/004 ,  G03F7/32 ,  H01L21/027

    Abstract: PROBLEM TO BE SOLVED: To provide an actinic ray sensitive or radiation sensitive resin composition having an ultrafine pore diameter (for instance, 60 nm or smaller), and capable of forming a hole pattern excellent in circularity with excellent dependence on development time, and to provide a resist film, a pattern forming method, a method for manufacturing an electronic device, and an electronic device using the same.SOLUTION: There is provided an actinic ray sensitive or radiation sensitive resin composition including: (P) a resin having a repeating unit (a) represented by the following general formula (I); and (B) a compound that generates an organic acid by irradiation with an actinic ray or radiation. A content of the compound (B) is 8.0 mass% or more based on the total solid content of the actinic ray sensitive or radiation sensitive resin composition. A resist film, a pattern forming method, a method for manufacturing an electronic device and an electronic device using the same are also provided. In the general formula (I), Rrepresents a hydrogen atom or a methyl group.

    Abstract translation: 要解决的问题：提供具有超细孔径（例如，60nm以下）的光化射线敏感性或辐射敏感性树脂组合物，能够形成圆形性优异的孔图案，并且对显影时间具有优异的依赖性 ，并提供抗蚀剂膜，图案形成方法，电子器件的制造方法和使用该抗蚀剂膜的电子器件。 提供一种光化射线敏感或辐射敏感性树脂组合物，其包含：（P）具有由以下通式（I）表示的重复单元（a）的树脂; 和（B）通过用光化射线或辐射照射产生有机酸的化合物。 化合物（B）的含量相对于光化射线敏感性或辐射敏感性树脂组合物的总固体成分为8.0质量％以上。 还提供了抗蚀剂膜，图案形成方法，电子器件的制造方法和使用其的电子器件。 在通式（I）中，R 0 表示氢原子或甲基。 版权所有（C）2013，JPO＆INPIT

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