公开(公告)号：JP2011197339A

公开(公告)日：2011-10-06

申请号：JP2010063408

申请日：2010-03-19

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： MIZUTANI KAZUYOSHI ,  IWATO KAORU ,  TARUYA SHINJI ,  KAMIMURA SATOSHI ,  ENOMOTO YUICHIRO ,  FUJII KANA ,  KATAOKA SHOHEI ,  DOBASHI TORU ,  KATO KEITA

IPC: G03F7/038 ,  G03F7/039 ,  G03F7/32

Abstract: PROBLEM TO BE SOLVED: To provide: a resist composition having excellent development failure performance; and a pattern forming method using the composition.SOLUTION: The resin composition contains: a resin which contains a repeating unit including a group that dissolves by action of acid to generate an alcoholic hydroxy group and decreases the solubility to a developing solution containing an organic solvent by the action of acid; and a compound that generates acid expressed by the following general formula (I) by application of activated light rays or radiation rays, wherein Xf represents each independently, a fluorine atom or an alkyl group substituted with at least one fluorine atom, Rand Rrepresent each independently, a group selected from the group consisting of a hydrogen atom, a fluorine atom, an alkyl group, and an alkyl group substituted with at least one fluorine atom, L represents each independently a single bond or divalent linking group, A represents each independently a group having a cyclic structure, x represents each independently an integer of 1 to 20, y represents each independently an integer of 0 to 10, and z represents each independently an integer of 0 to 10.

Abstract translation: 要解决的问题：提供：具有优异的显影破坏性能的抗蚀剂组合物; 和使用该组合物的图案形成方法。树脂组合物含有：含有重复单元的树脂，该重复单元包括通过酸作用而溶解以产生醇羟基并降低对含有有机溶剂的显影溶液的溶解度的基团 通过酸的作用; 以及通过施加活化的光线或射线产生由以下通式（I）表示的酸的化合物，其中Xf各自独立地为氟原子或被至少一个氟原子取代的烷基，R R R R各自独立地 选自氢原子，氟原子，烷基和被至少一个氟原子取代的烷基的基团，L各自独立地为单键或二价连接基团，A表示各自独立地为 具有环状结构的基团，x表示各自独立地为1〜20的整数，y表示各自独立地为0〜10的整数，z表示各自独立地为0〜10的整数。

公开(公告)号：JP2011186247A

公开(公告)日：2011-09-22

申请号：JP2010052385

申请日：2010-03-09

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： KATO KEITA ,  TARUYA SHINJI ,  KAMIMURA SATOSHI ,  ENOMOTO YUICHIRO ,  IWATO KAORU

IPC: G03F7/004 ,  C08F220/10 ,  G03F7/038 ,  G03F7/039 ,  G03F7/32 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method that excels in exposure latitude and sensitivity, which can form a pattern that also excels in line-width variation, and to provide a chemically-amplified resist composition using the method. SOLUTION: The method for forming a pattern includes exposing a film of the chemically-amplified resist composition containing (A) a resin, (B) a compound which generates acid by irradiation with activated light ray or radial ray and which is expressed by a general formula (I) or (II), (C) a cross-linking agent and (D) a solvent, and performing development using a developer containing an organic solvent. In the general formula (I), R 1 to R 5 repectively represent a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group or the like, independently. R 6 and R 7 repectively represent a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom, or the like, independently. R x and R y respectively represent an alkyl group, a cycloalkyl group, a 2-oxoalkyl group, a 2-oxocycloalkyl group, or the like, independently. Z - represents non-nucleopetal anion. In the general formula (II), R 13 represents a hydrogen atom, a fluorine atom, a hydroxyl group, an alkyl group, a cycloalkyl group, an alkoxy group, or the like. R 14 represents independently when existing in multiple, a hydroxyl group, an alkyl group, a cycloalkyl group, an alkoxy group, or the like. R 15 represents an alkyl group, a cycloalkyl group or a naphthyl group, independently. l represents an integer 0 to 2. r represents an integer 0 to 8. Z - represents a non-nucleopetal anion. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种在曝光宽容度和灵敏度方面优异的图案形成方法，其可以形成也优于线宽变化的图案，并提供使用该方法的化学放大抗蚀剂组合物。 解决方案：用于形成图案的方法包括将含有（A）树脂的化学放大抗蚀剂组合物的膜曝光，（B）通过用激活的光线或径向辐射照射产生酸的化合物，并且其表达 通过通式（I）或（II），（C）交联剂和（D）溶剂，并使用含有有机溶剂的显影剂进行显影。 在通式（I）中，R SB 1至R SB 5分别独立地表示氢原子，烷基，环烷基，芳基等。 R SB 6和R SB 7分别独立地表示氢原子，烷基，环烷基，卤素原子等。 R SB和R SB分别表示烷基，环烷基，2-氧代烷基，2-氧代环烷基等。 Z - 表示非核子阴离子。 在通式（II）中，R SB 13表示氢原子，氟原子，羟基，烷基，环烷基，烷氧基等。 当存在多个，羟基，烷基，环烷基，烷氧基等时，R“SB”独立地表示。 R SB 15独立地表示烷基，环烷基或萘基。 l表示0〜2的整数。r表示0〜8的整数。Z表示非核子阴离子。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2011141494A

公开(公告)日：2011-07-21

申请号：JP2010003386

申请日：2010-01-08

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： ENOMOTO YUICHIRO ,  TARUYA SHINJI ,  KAMIMURA SATOSHI ,  IWATO KAORU ,  KATO KEITA ,  SHIBUYA AKINORI

IPC: G03F7/004 ,  C08F20/34 ,  G03F7/038 ,  G03F7/039 ,  G03F7/32 ,  G03F7/38 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method and a chemically amplified negative resist composition exhibiting a large depth of focus (DOF) and small line-width roughness (LWR) and being capable of forming a pattern having a superior pattern shape and reduced bridge defects. SOLUTION: The pattern forming method includes (α) a step of forming a film from a chemically amplified resist composition; (β) a step of exposing the film; and (γ) a step of developing with a developer containing an organic solvent, wherein the resist composition comprises (A) a resin which exhibits a decreased solubility in a developer containing an organic solvent by the action of an acid, (B) a compound which generates an acid upon irradiation with actinic rays or radiation, (D) a solvent, and (G) a compound which has basicity or exhibits increased basicity due to the action of an acid, the compound having at least one of a fluorine atom or an oxygen atom. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：为了提供显示出大的焦深（DOF）和小的线宽粗糙度（LWR）的图案形成方法和化学放大的负性抗蚀剂组合物，并且能够形成具有优异图案的图案 形状和桥梁缺陷减少。 解决方案：图案形成方法包括（α）从化学放大抗蚀剂组合物形成膜的步骤; （β）暴露薄膜的步骤; 和（γ）用包含有机溶剂的显影剂显影的步骤，其中抗蚀剂组合物包含（A）通过酸作用显示含有有机溶剂的显影剂的溶解性降低的树脂，（B）化合物 其在用光化射线或辐射照射时产生酸，（D）溶剂，和（G）由于酸的作用而具有碱性或显示增加的碱性的化合物，所述化合物具有氟原子或氟原子中的至少一个或 氧原子。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2011137888A

公开(公告)日：2011-07-14

申请号：JP2009296418

申请日：2009-12-25

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： KAMIMURA SATOSHI ,  TARUYA SHINJI ,  ENOMOTO YUICHIRO ,  KATO KEITA ,  IWATO KAORU

IPC: G03F7/039 ,  C08F220/12 ,  G03F7/004 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method by which a pattern excellent in exposure latitude (EL) and line width variance (LWR) or CD (critical dimension) uniformity (CDU) is formed; to provide a pattern formed by the same; to provide a chemically amplified resist composition used in the pattern forming process; and to provide a resist film formed from the resist composition.
SOLUTION: The pattern forming method includes (α) a process for forming a film by using a chemically amplified resist composition containing (A) a resin having a non-aromatic cyclic organic group, (B) a compound generating an acid by the irradiation with an actinic ray or radiation, and (C) a crosslinking agent, (β) a process for exposing the formed film, and (γ) a process for developing the exposed film by using a developing solution containing an organic solvent. A pattern formed by the pattern forming method, a chemically amplified resist composition used in the pattern forming method, and a resist film formed from the resist composition are also provided.
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供形成曝光宽容度（EL）和线宽方差（LWR）或CD（临界尺寸）均匀性（CDU）优异的图案的图案形成方法; 以提供由其形成的图案; 以提供在图案形成过程中使用的化学放大抗蚀剂组合物; 并提供由抗蚀剂组合物形成的抗蚀剂膜。 解决方案：图案形成方法包括：（α）通过使用含有（A）具有非芳族环状有机基团的树脂的化学放大抗蚀剂组合物（B）通过以下方法生成酸的化合物 用光化射线或辐射照射，（C）交联剂，（β）曝光成膜的方法，（γ）使用含有有机溶剂的显影液显影曝光膜的方法。 还提供了通过图案形成方法形成的图案，在图案形成方法中使用的化学放大型抗蚀剂组合物和由抗蚀剂组合物形成的抗蚀剂膜。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2013129837A

公开(公告)日：2013-07-04

申请号：JP2013005419

申请日：2013-01-16

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： ENOMOTO YUICHIRO ,  TARUYA SHINJI ,  KAMIMURA SATOSHI ,  IWATO KAORU ,  KATO KEITA ,  SHIBUYA AKINORI

IPC: C08F20/36 ,  C07D211/46 ,  C07D211/62 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method capable of forming a pattern with wide depth of focus (DOF) and small line width roughness (LWR), excellent in pattern shape, and reduced in bridge defect; and to provide a chemically amplified negative resist composition.SOLUTION: A pattern forming method includes: a step (α) of forming a film by using a chemically amplified negative resist composition; a step (β) of exposing the film; and a step (γ) of developing by using a developer containing an organic solvent. The resist composition includes (A) a resin whose solubility to the developer containing the organic solvent is decreased by the action of an acid, (B) a compound that generates an acid by irradiation of an active ray or a radioactive ray, (D) a solvent, and (G) a compound that has at least one of a fluorine atom and a silicon atom, and that has basicity or whose basicity is increased by the action of the acid.

Abstract translation: 要解决的问题：提供能够形成宽焦点（DOF）和小线宽粗糙度（LWR）的图案的图案形成方法，图案形状优异，桥缺陷减少; 并提供化学放大的负性抗蚀剂组合物。解决方案：图案形成方法包括：通过使用化学放大的负性抗蚀剂组合物形成膜的步骤（α） 暴露电影的一步（＆bgr）; 和通过使用含有有机溶剂的显影剂显影的步骤（γ）。 抗蚀剂组合物包含（A）通过酸的作用使对含有有机溶剂的显影剂的溶解度降低的树脂，（B）通过活性射线或放射线照射产生酸的化合物，（D） 溶剂，和（G）具有氟原子和硅原子中的至少一个的化合物，并且具有通过酸的作用具有碱性或碱度增加的化合物。

公开(公告)号：JP2013050511A

公开(公告)日：2013-03-14

申请号：JP2011187055

申请日：2011-08-30

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： KATO KEITA ,  NAKAMURA ATSUSHI

IPC: G03F7/039 ,  C08F220/12 ,  G03F7/004 ,  G03F7/038 ,  G03F7/32 ,  H01L21/027

CPC classification number: G03F7/0045 ,  C07C2602/14 ,  C07C2603/56 ,  C07C2603/74 ,  C08F212/08 ,  C08F220/10 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/325 ,  H01L21/0274 ,  H01L21/3081 ,  Y10S430/114

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method by which a negative pattern having high resolution, high etching durability and reduced development residue defects can be formed by using KrF light, electron beams and EUV light, and to provide an actinic ray-sensitive or radiation-sensitive resin composition and an actinic ray-sensitive or radiation-sensitive film used for the method.SOLUTION: The pattern forming method includes steps of forming a film by using the following resin composition, exposing the film and developing the exposed film by use of a developing solution containing an organic solvent to form a negative pattern. The resin composition used is an actinic ray-sensitive or radiation-sensitive resin composition comprising: (A) a resin the solubility of which with an organic solvent is decreased by an action of an acid, the resin containing a repeating unit having a group that is decomposed by an action of an acid to generate a polar group and also containing an aromatic group; (B) a nonionic compound that generates an acid by irradiation with actinic rays or radiation; and (C) a solvent.

Abstract translation: 要解决的问题：提供一种图案形成方法，通过使用KrF光，电子束和EUV光可以形成具有高分辨率，高蚀刻耐久性和减少的显影残余缺陷的负图案，并提供光化学 射线敏感或辐射敏感性树脂组合物和用于该方法的光化射线敏感或辐射敏感膜。 解决方案：图案形成方法包括以下步骤：通过使用以下树脂组合物形成膜，通过使用含有机溶剂的显影溶液曝光膜和显影曝光膜以形成负图案。 所使用的树脂组合物是光化学射线敏感或辐射敏感性树脂组合物，其包含：（A）通过酸的作用使其与有机溶剂的溶解度降低的树脂，所述树脂含有具有以下基团的重复单元： 通过酸的作用分解以产生极性基团并且还含有芳族基团; （B）通过用光化射线或辐射照射产生酸的非离子化合物; 和（C）溶剂。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2012128383A

公开(公告)日：2012-07-05

申请号：JP2011002060

申请日：2011-01-07

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： ENOMOTO YUICHIRO ,  TARUYA SHINJI ,  KAMIMURA SATOSHI ,  IWATO KAORU ,  KATO KEITA ,  SHIBUYA AKINORI

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/32 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide an actinic ray-sensitive or radiation-sensitive resin composition excellent in roughness characteristics, focus latitude, bridge defect preventing performance and dependency of sensitivity on post exposure baking (PEB) temperature, and a pattern forming method using the composition.SOLUTION: The actinic ray-sensitive or radiation-sensitive resin composition comprises: a resin, which contains a first repeating unit having a group that is decomposed by an action of an acid to produce an alcoholic hydroxyl group, and the solubility of which with a developing solution containing an organic solvent is decreased by the action of the acid; a first compound that generates an acid by irradiation with actinic rays or radiation; a solvent; and a second compound having at least one of a fluorine atom and a silicon atom and having basicity or increasing basicity by the action of the acid.

Abstract translation: 要解决的问题：提供粗糙度特性，聚焦纬度，桥缺陷防止性能以及敏感度对后曝光烘烤（PEB）温度的依赖性以及图案形成方面优异的光化射线敏感或辐射敏感性树脂组合物 方法使用该组合物。 光敏射线敏感性或辐射敏感性树脂组合物包括：树脂，其含有具有通过酸作用分解以产生醇羟基的基团的第一重复单元，以及溶解度 其中含有有机溶剂的显影溶液通过酸的作用而降低; 通过用光化射线或辐射照射产生酸的第一种化合物; 溶剂; 和具有氟原子和硅原子中的至少一个的第二化合物，并且通过酸的作用具有碱性或增加的碱性。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2012068628A

公开(公告)日：2012-04-05

申请号：JP2011182937

申请日：2011-08-24

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： ENOMOTO YUICHIRO ,  TARUYA SHINJI ,  KAMIMURA SATOSHI ,  KATO KEITA ,  FUJII KANA

IPC: G03F7/32 ,  C08F220/28 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

CPC classification number: G03F7/40 ,  G03F7/0382 ,  G03F7/0397 ,  G03F7/20 ,  G03F7/2041 ,  G03F7/325 ,  G03F7/405 ,  H01L29/02

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method using an organic solvent-based developing solution, by which a pattern with reduced bridge defects can be formed, and to provide a rinsing liquid for use in the above method.SOLUTION: The pattern forming method includes steps of (a) forming a film by using a chemically amplified resist composition; (b) exposing the film to light; (c) developing the film by using a developing solution containing an organic solvent; and (d) rinsing the film by using a rinsing liquid containing an organic solvent and having a specific gravity larger than that of the developing solution.

Abstract translation: 要解决的问题：提供一种使用有机溶剂型显影液的图案形成方法，通过该图案形成方法可以形成桥接缺陷减小的图案，并提供用于上述方法的冲洗液。 解决方案：图案形成方法包括以下步骤：（a）通过使用化学放大抗蚀剂组合物形成膜; （b）将薄膜曝光; （c）通过使用含有机溶剂的显影液显影该膜; 和（d）通过使用含有有机溶剂并且比重大于显影液的比重的冲洗液冲洗该膜。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2012027438A

公开(公告)日：2012-02-09

申请号：JP2011029622

申请日：2011-02-15

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： IWATO KAORU ,  KATAOKA SHOHEI ,  TARUYA SHINJI ,  KAMIMURA SATOSHI ,  KATO KEITA ,  ENOMOTO YUICHIRO ,  MIZUTANI KAZUYOSHI ,  DOBASHI TORU ,  FUJII KANA

IPC: G03F7/038 ,  C08F220/28 ,  C08F232/00 ,  G03F7/039 ,  G03F7/32 ,  H01L21/027

CPC classification number: G03F7/0045 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0395 ,  G03F7/0397 ,  G03F7/0757 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/325 ,  Y10T428/24479

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method excellent in sensitivity, limit resolution, roughness properties, exposure latitude (EL), post exposure bake (PEB) temperature dependency and depth of focus (DOF), and a resist composition.SOLUTION: A pattern forming method of the invention comprises: (A) forming a film using a resin-containing resist composition, which includes a repeating unit with a group that is decomposed by an action of an acid to produce an alcoholic hydroxy group and in which its solubility in a developer containing an organic solvent decreases by an action of an acid; (B) exposing the film; and (C) developing the exposed film using a developer containing an organic solvent.

Abstract translation: 要解决的问题：提供灵敏度，极限分辨率，粗糙度特性，曝光宽容度（EL），曝光后烘烤（PEB）温度依赖性和聚焦深度（DOF）以及抗蚀剂组合物优异的图案形成方法 。 解决方案：本发明的图案形成方法包括：（A）使用含树脂的抗蚀剂组合物形成膜，该组合物包括具有通过酸作用分解的基团的重复单元以产生醇羟基 并且其中在含有机溶剂的显影剂中的溶解度通过酸的作用而降低; （B）曝光胶片; 和（C）使用含有有机溶剂的显影剂显影曝光的薄膜。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2011197587A

公开(公告)日：2011-10-06

申请号：JP2010067075

申请日：2010-03-23

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： KATO KEITA ,  TARUYA SHINJI ,  KAMIMURA SATOSHI ,  ENOMOTO YUICHIRO ,  IWATO KAORU

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/32 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method with the excellent exposure latitude (EL) and focus margin (DOF) capable of reducing the line width irregularity (LWR) and residual defect, a chemically amplified resist composition and a resist film.SOLUTION: The pattern forming method includes: (α) a step of forming a film with a substantially alkaline-insoluble resin (A) with a polarity increased by action of an acid for reducing the solubility to a developing solution including an organic solvent, a nonionic compound (B) for generating an acid by radiation of an active ray or a radioactive, and a chemically amplified resist composition (C) including a solvent; (β) a step of exposing the film; and (γ) a step of developing the film with a developing solution including an organic solvent. Also, a chemically amplified resist composition used for the pattern forming method, and a resist film formed with the chemically amplified resist composition are provided.

Abstract translation: 要解决的问题：提供能够降低线宽不规则（LWR）和残留缺陷的优异的曝光宽容度（EL）和聚焦余量（DOF）的图案形成方法，化学放大抗蚀剂组合物和抗蚀剂膜。 图案形成方法包括：（α）通过用于降低对包含有机溶剂的显影溶液的溶解性的酸的作用而使具有极性增加的基本上不溶于碱的树脂（A）的膜形成膜的步骤，非离子表面活性剂 通过活性射线或放射性辐射产生酸的化合物（B）和包含溶剂的化学放大抗蚀剂组合物（C）; （β）暴露薄膜的步骤; 和（γ）用包含有机溶剂的显影液显影该膜的步骤。 此外，提供了用于图案形成方法的化学放大抗蚀剂组合物和形成有化学放大抗蚀剂组合物的抗蚀剂膜。