公开(公告)号：JP2017117834A

公开(公告)日：2017-06-29

申请号：JP2015248637

申请日：2015-12-21

Applicant: 浜松ホトニクス株式会社 ,  Hamamatsu Photonics Kk

Inventor： YAMAMOTO AKINAGA ,  NAKAMURA SHIGEYUKI ,  NAGANO TERUMASA ,  SATO KENICHI

IPC: H01L31/107 ,  G01J1/02 ,  G01J1/42 ,  H01L27/144 ,  H01L27/146 ,  H01L31/10

Abstract: 【課題】幅広い光量レンジに対応し得る光電変換素子を提供する。【解決手段】光電変換素子1Aは、共通の半導体基板30に形成され、共通のバイアス電圧により動作するAPDをそれぞれ含む複数のピクセル10と、複数のピクセル10に含まれる二以上の第1のピクセル11と電気的に接続され、二以上の第1のピクセル11からの出力電流を一括して取り出す第1の配線21と、複数のピクセル10に含まれる二以上の第2のピクセル12と電気的に接続され、二以上の第2のピクセル12からの出力電流を一括して取り出す第2の配線22とを備える。第1のピクセル11の受光面積は、第2のピクセル12の受光面積よりも大きい。【選択図】図1

公开(公告)号：JP2014160042A

公开(公告)日：2014-09-04

申请号：JP2013031555

申请日：2013-02-20

Applicant: Hamamatsu Photonics Kk ,  浜松ホトニクス株式会社

Inventor： FUJII YOSHIMARO ,  NAGANO TERUMASA ,  YAMAMURA KAZUHISA ,  SATO KENICHI ,  TSUCHIYA RYUTARO

IPC: G01T1/20 ,  G01T1/161 ,  H01L31/107

CPC classification number: H01L27/14663 ,  G01N23/046 ,  G01T1/241 ,  G01T1/2985 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14661 ,  H01L31/022408 ,  H01L31/115 ,  H01L2224/13

Abstract: PROBLEM TO BE SOLVED: To provide a detector that can improve the characteristics such as a time resolution in the entire detector; and a PET device and X-ray CT device that use the same.SOLUTION: A detector comprises a plurality of semiconductor chips S1 that are arranged on a wiring board via bump electrodes so as to be two-dimensionally separated from each other. Each of the semiconductor chips S1 comprises: a semiconductor substrate that has a plurality of light detection units; an insulating layer that is formed on a surface of the semiconductor substrate; a common electrode that is arranged on the insulating layer; read wire that electrically connects between quenching resistors of the individual light detection units and the common electrode; and a through electrode that extends from the common electrode to a back surface of the semiconductor substrate via a through hole of the semiconductor substrate.

Abstract translation: 要解决的问题：提供一种检测器，其可以改善整个检测器中的时间分辨率等特性; 以及使用其的PET装置和X射线CT装置。解决方案：检测器包括通过凸块电极布置在布线板上以便彼此二维分离的多个半导体芯片S1。 每个半导体芯片S1包括：具有多个光检测单元的半导体基板; 绝缘层，形成在所述半导体衬底的表面上; 布置在绝缘层上的公共电极; 读取各个光检测单元的淬火电阻和公共电极之间电连接的线; 以及通过半导体衬底的通孔从公共电极延伸到半导体衬底的后表面的贯通电极。

公开(公告)号：JP2014090034A

公开(公告)日：2014-05-15

申请号：JP2012238337

申请日：2012-10-29

Applicant: Hamamatsu Photonics Kk ,  浜松ホトニクス株式会社

Inventor： YAMAMOTO AKINAGA ,  NAGANO TERUMASA ,  YAMAMURA KAZUHISA ,  SATO KENICHI ,  TSUCHIYA RYUTARO

IPC: H01L31/107

CPC classification number: H01L27/1446 ,  H01L31/107

Abstract: PROBLEM TO BE SOLVED: To provide a photodiode array capable of improving characteristics such as a signal reading speed.SOLUTION: A photodiode array comprises avalanche photodiodes having a semiconductor region 14 which outputs a carrier, a surface electrode 3B electrically connected to the semiconductor region 14 and surrounding the semiconductor region 14 along the outer edge thereof, and a quenching resistor 4 connecting the surface electrode 3B and a read wiring 5B2. The read wiring 5B2 is located between adjacent avalanche photodiodes. If a plane containing a surface of the semiconductor region 14 is a reference plane, a distance tb from the reference plane to the read wiring 5B2 is greater than a distance ta from the reference plane to the surface electrode 3B.

Abstract translation: 要解决的问题：提供能够改善信号读取速度等特性的光电二极管阵列。解决方案：光电二极管阵列包括具有输出载体的半导体区域14的雪崩光电二极管，与半导体区域14电连接的表面电极3B 并且沿其外边缘围绕半导体区域14，以及连接表面电极3B和读取布线5B2的淬火电阻器4。 读取布线5B2位于相邻的雪崩光电二极管之间。 如果包含半导体区域14的表面的平面是参考平面，则从参考平面到读取布线5B2的距离tb大于从参考平面到表面电极3B的距离ta。

公开(公告)号：JP2014082420A

公开(公告)日：2014-05-08

申请号：JP2012230921

申请日：2012-10-18

Applicant: Hamamatsu Photonics Kk ,  浜松ホトニクス株式会社

Inventor： YAMAMOTO AKINAGA ,  NAGANO TERUMASA ,  YAMAMURA KAZUHISA ,  SATO KENICHI ,  TSUCHIYA RYUTARO

IPC: H01L31/107 ,  H01L27/146 ,  H01L31/00

CPC classification number: H01L27/14643 ,  H01L27/1443 ,  H01L27/1446 ,  H01L27/14605 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/14636 ,  H01L28/24 ,  H01L31/02027 ,  H01L31/022416 ,  H01L31/022466 ,  H01L31/107

Abstract: PROBLEM TO BE SOLVED: To provide a photodiode array with high time resolution.SOLUTION: A photodiode array comprises: a light-receiving region which includes a plurality of light detection parts 10 each including a first conductivity type first semiconductor region 12, second conductivity type second semiconductor regions 13, 14 which form pn junction with the first semiconductor region 12; a first contact electrode 3A making contact with the second semiconductor region; a second contact electrode 4A which is composed of a material different from that of the first contact electrode 3A and arranged at a position overlapping the first contact electrode 3A and in contact with the first contact electrode; and a resistive layer 4B arranged successively to the second contact electrode 4A.

Abstract translation: 要解决的问题：提供具有高时间分辨率的光电二极管阵列。解决方案：光电二极管阵列包括：光接收区域，其包括多个光检测部分10，每个光检测部分10包括第一导电类型的第一半导体区域12，第二导电类型 与第一半导体区域12形成pn结的第二半导体区域13,14; 与第二半导体区域接触的第一接触电极3A; 第二接触电极4A，其由与第一接触电极3A的材料不同的材料构成，并且布置在与第一接触电极3A重叠并与第一接触电极接触的位置; 以及依次配置到第二接触电极4A的电阻层4B。

公开(公告)号：JP2013089919A

公开(公告)日：2013-05-13

申请号：JP2011232109

申请日：2011-10-21

Applicant: Hamamatsu Photonics Kk ,  浜松ホトニクス株式会社

Inventor： NAGANO TERUMASA ,  HOSOKAWA NOBURO ,  SUZUKI TOMOHITO ,  BABA TAKASHI

IPC: H01L31/107 ,  G01T1/20 ,  H01L27/146 ,  H01L31/02 ,  H01L31/09

CPC classification number: H01L27/14643 ,  H01L27/1446 ,  H01L27/14618 ,  H01L27/14636 ,  H01L27/14658 ,  H01L31/107

Abstract: PROBLEM TO BE SOLVED: To provide a light detection device which can significantly improve an aperture ratio.SOLUTION: A light detection device 1 comprises a semiconductor photodetector 10A which includes a semiconductor substrate 1N and a mounting substrate 20 which is disposed oppositely to the semiconductor photodetector 10A. The semiconductor photodetector 10A includes a plurality of avalanche photodiodes APD which are operable in Geiger mode and are formed in a semiconductor substrate 1N and electrodes E7 which are electrically connected to each of the avalanche photodiodes APD and are disposed on a principal plane 1Nb side of the semiconductor substrate 1N. A mounting substrate 20 includes a plurality of electrodes E9 which are disposed on a principal plane 20a side for each electrode E7 and quenching resistors R1 which are electrically connected to each of the electrodes E9 and are disposed on the principal plane 20a side. The electrodes E7 and the electrodes E9 are each connected via a bump electrode BE.

Abstract translation: 要解决的问题：提供可以显着提高开口率的光检测装置。 解决方案：光检测装置1包括半导体光电检测器10A，其包括半导体基板1N和与半导体光电检测器10A相对设置的安装基板20。 半导体光电检测器10A包括多个雪豹光电二极管APD，其可以盖革模式操作，并形成在半导体衬底1N中，电极E7与每个雪崩光电二极管APD电连接并设置在 半导体衬底1N。 安装基板20包括多个电极E9，其设置在每个电极E7的主平面20a侧上，并且电连接到每个电极E9并设置在主平面20a侧上的淬火电阻器R1。 电极E7和电极E9分别经由凸块电极BE连接。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2013065911A

公开(公告)日：2013-04-11

申请号：JP2013006068

申请日：2013-01-17

Applicant: Hamamatsu Photonics Kk ,  浜松ホトニクス株式会社

Inventor： YAMAMURA KAZUHISA ,  SAKAMOTO AKIRA ,  NAGANO TERUMASA ,  ISHIKAWA YOSHITAKA ,  KAWAI SATORU

IPC: H01L31/10

Abstract: PROBLEM TO BE SOLVED: To provide a silicon photodiode array having a sufficient spectral sensitivity characteristic in a wavelength band of a near infrared.SOLUTION: A photodiode array PDA1 comprises: a substrate S which includes an n type semiconductor layer 32 and on which a plurality of light detection channels CH are formed; a ptype semiconductor layer 33 formed on the n type semiconductor layer 32; resistors 24 provided for respective light detection channels CH with one ends being connected to signal conductor wires 23; and n type separation parts 40 formed among the plurality of light detection channels CH. The ptype semiconductor layer 33 forms p-n junction at a boundary surface with the n type semiconductor layer 32 and includes a plurality of multiplication regions AM amplifying a carrier generated by incidence of detected light by avalanche multiplication corresponding to the light detection channels. On a surface of the n type semiconductor layer 32, irregular convexoconcave 10 is formed and the surface is optically exposed.

Abstract translation: 要解决的问题：提供在近红外线的波长带中具有足够的光谱灵敏度特性的硅光电二极管阵列。 解决方案：光电二极管阵列PDA1包括：衬底S，其包括n型半导体层32，并在其上形成有多个光检测通道CH; 形成在n型半导体层32上的p型半导体层33; 为相应的光检测通道CH提供的电阻器24，其一端连接到信号导线23; 以及形成在多个光检测通道CH之间的n型分离部40。 p型半导体层33在与n型半导体层32的边界面处形成pn结，并且包括多个乘法区域AM，其对通过检测到的光的入射产生的载流子进行放大 通过对应于光检测通道的雪崩乘法。 在n型半导体层32的表面上形成不规则的凹凸10，并且表面被光学曝光。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2010226071A

公开(公告)日：2010-10-07

申请号：JP2009136389

申请日：2009-06-05

Applicant: Hamamatsu Photonics Kk ,  浜松ホトニクス株式会社

Inventor： SAKAMOTO AKIRA ,  IIDA TAKASHI ,  YAMAMOTO AKINAGA ,  YAMAMURA KAZUHISA ,  NAGANO TERUMASA

IPC: H01L31/10 ,  H01L27/146

CPC classification number: H01L31/02366 ,  H01L27/1446 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light-detecting element, using silicon, which has sufficient spectral sensitivity characteristics in the near-infrared wavelength band. SOLUTION: An n-type semiconductor substrate 1 is prepared, having a first main face 1a and a second main face 1b which face each other, and with a P + type semiconductor region 3 formed on the first main face 1a. At least the region opposing the P + type semiconductor region 3 of the second main face 1a of the n - type semiconductor substrate 1 is irradiated with pulsed laser light, and irregular recesses and protrusions 10 are formed. After the irregular recesses and protrusions 10 are formed, an accumulation layer 11 having a higher impurity density than that of the n - type semiconductor substrate 1 is formed on the second main face 1b of the n - type semiconductor substrate 1. After the accumulation layer 11 is formed, the n - type semiconductor substrate 1 is heat-treated. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种在近红外波长带中具有足够的光谱灵敏度特性的硅的半导体光检测元件。 解决方案：制备n型半导体衬底1，其具有彼此面对的第一主面1a和第二主面1b以及形成在第一主面1a和第二主面1b上的P + / SP>型半导体区域3 第一主面1a。 至少与n - / SP>型半导体衬底1的第二主面1a的P + 型半导体区域3相对的区域用脉冲激光照射， 并形成突起10。 在形成不规则凹陷和突起10之后，在n - / SP>型半导体衬底1的第二主面1b上形成具有比n - 型半导体衬底1.在形成堆积层11之后，对n型半导体衬底1进行热处理。 版权所有（C）2011，JPO＆INPIT