33.
    发明专利
    未知

    公开(公告)号:DK0417680T3

    公开(公告)日:1993-04-19

    申请号:DK90117355

    申请日:1990-09-10

    Applicant: HOECHST AG

    Abstract: The invention relates to a method for the production of 1,1,1,2-tetrafluoroethane from 1,1,1-trifluoro-2-chloroethane and hydrogen fluoride in the gas phase. This method makes use of a catalyst which contains chromium and magnesium and which can be obtained by precipitating chromium(III) hydroxide by reacting 1 mole of a water-soluble chromium(III) salt with at least 1.5 moles of magnesium hydroxide or magnesium oxide in the presence of water, converting the reaction mixture into a paste which contains chromium hydroxide and a magnesium salt, and then drying the paste and treating the product with hydrogen fluoride at temperatures of 20 to 500 DEG C.

    34.
    发明专利
    未知

    公开(公告)号:DE3874087D1

    公开(公告)日:1992-10-01

    申请号:DE3874087

    申请日:1988-11-04

    Applicant: HOECHST AG

    Abstract: Prepn. of carbonyl fluorides (I) comprises oligomerisation of hexafluoropropene oxide (HFPO) (II) with a catalyst composed of an alkali fluoride, a dinitrile and a polyethylene glycol dimethyl ether. Suitable materials for the alkali fluoride are fluorides of Na, K, Cs, dintriles of satd. dicarboxylic acids, 5-8C and polyethylene glycol dimethyl ether with 2-6 ethylene oxide units. The three components are used in the ratio 2-30 wt.% alkali fluoride, 50-95% wt. dinitrile and 2-50 wt.% polyether as percentages of total catalyst system. Alkali-fluoride, KF, dinitrile, adiponitrile, polyether and tetraethylene glycol dimethyl ether are pref.

    35.
    发明专利
    未知

    公开(公告)号:DE4020184A1

    公开(公告)日:1992-01-02

    申请号:DE4020184

    申请日:1990-06-25

    Applicant: HOECHST AG

    Abstract: Compounds of the formula (I) in which, independently of one another, each R is OH or lower alkyl having 1-4 carbon atoms and each R' is hydrogen or lower alkyl having 1-4 carbon atoms, are prepared by the condensation of partially fluorinated aromatic hydrocarbons in the presence of hydrogen fluoride or by the reductive coupling of partially fluorinated aromatic compounds. The compounds are used as a starting material for the preparation of partially fluorinated polycondensates.

    36.
    发明专利
    未知

    公开(公告)号:DE58900327D1

    公开(公告)日:1991-11-07

    申请号:DE58900327

    申请日:1989-02-15

    Applicant: HOECHST AG

    Abstract: A process for the preparation of perfluoroalkyl compounds which comprises reacting a perfluoroalkyl-trimethylsilane of the general formula (CH3)3Si-CnF2n+1 (I), wherein the group CnF2n+1 represents a perfluoroalkyl group having from 1 to 6 carbon atoms, with a carbonyl compound of the general formula F1-CO-R2 (II), wherein R1 represents a hydrocarbon group or hydrogen and R2 represents a hydrocarbon group, a perfluoroalkyl group or a perfluoroaryl group, but wherein R1 and R2 together may also be part of an alicyclic ring system, in the presence of a salt-like fluoride-which is at least partially soluble in the reaction medium-as a catalyst to yield a silylether of the formula (III) and isolating this compound or hydrolyzing it to yield an alcohol of the formula IV (IV) The invention also relates to pentafluoroethyl trimethylsilane (CH3)3Si-CF2CF3 and a process for the preparation of this compound.

    37.
    发明专利
    未知

    公开(公告)号:DE3930507A1

    公开(公告)日:1991-03-21

    申请号:DE3930507

    申请日:1989-09-13

    Applicant: HOECHST AG

    Abstract: The invention relates to a method for the production of 1,1,1,2-tetrafluoroethane from 1,1,1-trifluoro-2-chloroethane and hydrogen fluoride in the gas phase. This method makes use of a catalyst which contains chromium and magnesium and which can be obtained by precipitating chromium(III) hydroxide by reacting 1 mole of a water-soluble chromium(III) salt with at least 1.5 moles of magnesium hydroxide or magnesium oxide in the presence of water, converting the reaction mixture into a paste which contains chromium hydroxide and a magnesium salt, and then drying the paste and treating the product with hydrogen fluoride at temperatures of 20 to 500 DEG C.

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