Abstract:
A display device and a method for fabricating the same are provided. The device is an active matrix interference modulator (IMOD) display device which includes a thin film transistor and an interference modulator (IMOD). The interference modulator (IMOD) is integrated on the thin film transistor, a first metal layer is simultaneously used as a light-shielding pattern and a gate electrode, and a second metal layer is simultaneously used as a wiring and a source/drain metal layer. Therefore, the fabricating time and cost are saved. In addition, the aperture ratio of the display device is improved because the pixel thin film transistor is not below an optical gap.
Abstract:
A system for displaying images including a display panel is provided. The display panel has a display area and a peripheral area. The display panel includes a metal layer disposed on a first substrate. A second substrate is disposed opposite to the first substrate. A seal is disposed at the peripheral area and between the first and the second substrates and at the peripheral area. A patterned planarization layer is disposed on the first substrate. A passivation layer disposed between the seal and the first substrate, wherein the seal is in contact with a sidewall of the passivation layer.
Abstract:
The present invention discloses a low temperature poly-silicon thin film transistor, a manufacturing method thereof, and a display device. Particularly, a metal film is formed between source and drain electrodes and a first conductive layer, and the metal film reacts with the poly-silicon of the source and drain electrodes to form metal silicide, whereby activating the source and drain electrodes at a low temperature. As such, the temperature of the manufacturing process of low temperature poly-silicon thin film transistor can be confined to 350° C. or lower.
Abstract:
An operation method of a heater device with a memory unit, wherein the heater device includes a plurality of heater circuits, each of the plurality of heater circuits includes a first transistor and a second transistor. In a burning mode, selectively turning on at least one of the first transistors according to a first signal, so that a first current generated by voltage signals coupled to two terminals of the first transistor passes through the memory unit. In a reading mode, sequentially turning on the first transistors to determine states of the memory units. In a heating mode, selectively turning on at least one of the second transistors according to a second signal, so that a second current generated by voltage signals coupled to two terminals of the second transistor passes through a heater.
Abstract:
A heat source detection system includes an infrared light detector, a visible light detector, and a processing unit. The processing unit performs an operation according to at least one instruction, wherein the operation includes steps of: acquiring an infrared light image from the infrared light detector; identifying at least a heat source target according to at least one heat source edge in the infrared light image; determining whether at least one preset condition occurs in the at least one heat source target; and activating the visible light detector when the at least preset condition occurs in the at least one heat source target.
Abstract:
An electronic device are provided. The electronic device includes a display panel and an optical sensing module. The optical sensing module is disposed on a side of the display panel and includes an optical sensing layer, an optical assembly, and a light-blocking element. The optical assembly is disposed between the optical sensing layer and the display panel. The light-blocking element overlaps a portion of the optical sensing layer in a normal direction of the optical sensing layer. The optical assembly includes a plurality of light-blocking layers, and at least a portion of the plurality of light-blocking layers have different-sized openings.
Abstract:
An electronic device having a sensing region and a non-sensing region includes a sensing element, a first light shielding layer and a second light shielding layer. The sensing element is disposed corresponding to the sensing region. The first light shielding layer includes at least one first opening corresponding to the sensing element. The second light shielding layer includes at least one second opening overlapped with the first opening. In a cross-section view, a boundary between the sensing region and the non-sensing region is at an outer side of an edge of a portion of the first light shielding layer, and a horizontal distance between an edge of a portion of the second light shielding layer and the sensing element is greater than or equal to a vertical distance between the portion of the second light shielding layer and the sensing element in a top-view direction of the electronic device.
Abstract:
A card device and a manufacturing method thereof are disclosed. The card device includes a first substrate, a circuit board, a sensing module and a second substrate. The circuit board is disposed on the first substrate, and the circuit board includes an accommodating recess. The sensing module is disposed in the accommodating recess. The sensing module includes a sensing unit and a protective layer formed on the sensing unit, and the sensing unit is electrically connected to the circuit board. The second substrate is disposed on the circuit board. The second substrate includes an opening, and the opening exposes the protective layer.
Abstract:
An electronic panel includes a first substrate; a conductive line disposed on the first substrate and extending along a first direction; a conductive element extending along a second direction perpendicular to the first direction; and an active layer disposed between the conductive element and the first substrate. In a top view, the active layer includes a first overlapping region overlapping a portion of the conductive line; a first contact region electrically connected to a connecting portion of the conductive element through a first via hole; and a turning region between the first overlapping region and the first contact region. The turning region doesn't extend along the first direction and the second direction.
Abstract:
An optical sensing module and an electronic device are provided. The optical sensing module includes a substrate, a plurality of optical sensing elements, and a light-blocking element. The substrate has a sensing region and a non-sensing region around the sensing region. The plurality of optical sensing elements is disposed on the sensing region. The light-blocking element is disposed on the non-sensing region and a portion of the sensing region. The light-blocking element overlaps a portion of the plurality of optical sensing elements in a normal direction of the substrate.