Aluminum nitride (AlN) devices with infrared absorption structural layer

    公开(公告)号:US10294097B2

    公开(公告)日:2019-05-21

    申请号:US15291599

    申请日:2016-10-12

    Abstract: A micro-electro-mechanical system device is disclosed. The micro-mechanical system device comprises a first silicon substrate comprising: a handle layer comprising a first surface and a second surface, the second surface comprises a cavity; an insulating layer deposited over the second surface of the handle layer; a device layer having a third surface bonded to the insulating layer and a fourth surface; a piezoelectric layer deposited over the fourth surface of the device layer; a metal conductivity layer disposed over the piezoelectric layer; a bond layer disposed over a portion of the metal conductivity layer; and a stand-off formed on the first silicon substrate; wherein the first silicon substrate is bonded to a second silicon substrate, comprising: a metal electrode configured to form an electrical connection between the metal conductivity layer formed on the first silicon substrate and the second silicon substrate.

    Aluminum nitride (AlN) devices with infrared absorption structural layer
    32.
    发明授权
    Aluminum nitride (AlN) devices with infrared absorption structural layer 有权
    具有红外吸收结构层的氮化铝(AlN)器件

    公开(公告)号:US09511994B2

    公开(公告)日:2016-12-06

    申请号:US14480051

    申请日:2014-09-08

    Abstract: A micro-electro-mechanical system device is disclosed. The micro-mechanical system device comprises a first silicon substrate comprising: a handle layer comprising a first surface and a second surface, the second surface comprises a cavity; an insulating layer deposited over the second surface of the handle layer; a device layer having a third surface bonded to the insulating layer and a fourth surface; a piezoelectric layer deposited over the fourth surface of the device layer; a metal conductivity layer disposed over the piezoelectric layer; a bond layer disposed over a portion of the metal conductivity layer; and a stand-off formed on the first silicon substrate; wherein the first silicon substrate is bonded to a second silicon substrate, comprising: a metal electrode configured to form an electrical connection between the metal conductivity layer formed on the first silicon substrate and the second silicon substrate.

    Abstract translation: 公开了一种微机电系统装置。 微机械系统装置包括第一硅衬底,其包括:手柄层,包括第一表面和第二表面,所述第二表面包括空腔; 沉积在手柄层的第二表面上的绝缘层; 具有结合到绝缘层的第三表面和第四表面的器件层; 沉积在器件层的第四表面上的压电层; 设置在所述压电层上的金属导电层; 设置在所述金属导电层的一部分上的接合层; 以及在所述第一硅衬底上形成的间隔件; 其中所述第一硅衬底接合到第二硅衬底,包括:金属电极,被配置为在所述第一硅衬底上形成的所述金属传导层与所述第二硅衬底之间形成电连接。

    ANTI-SCRATCHING PROTECTION FOR ACOUSTIC SENSORS
    34.
    发明申请
    ANTI-SCRATCHING PROTECTION FOR ACOUSTIC SENSORS 审中-公开
    声音传感器的防撬保护

    公开(公告)号:US20150362589A1

    公开(公告)日:2015-12-17

    申请号:US14302897

    申请日:2014-06-12

    Abstract: An acoustic sensing element of an acoustic sensor and/or transducer can be covered with a composite material comprising a cover material and an anti-scratch material. In one aspect, an acoustic impedance of the cover material is lower than an acoustic impedance of the anti-scratch material. During acoustical sensing, the acoustic sensing element transmits an ultrasonic signal through the cover material and the anti-scratch material, which interferes with an object on (or near) the surface of the anti-scratch material. An interference signal that is generated based on an interference of the ultrasonic signal with the object propagates through the anti-scratch material and the cover material and is sensed by the acoustic sensing element. Further, an image of the object is recreated based on an analysis of the interference signal.

    Abstract translation: 声学传感器和/或换能器的声学传感元件可以用包括覆盖材料和防刮擦材料的复合材料覆盖。 在一个方面,覆盖材料的声阻抗低于抗刮擦材料的声阻抗。 在声学感测期间,声学感测元件通过覆盖材料和防刮擦材料传递超声波信号,该材料干扰抗刮擦材料表面上(或附近)的物体。 基于超声波信号与物体的干扰产生的干扰信号通过防刮擦材料和覆盖材料传播并被声感测元件感测。 此外,基于对干扰信号的分析来重新创建对象的图像。

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