Abstract:
A portable alarm device comprises a main body, an operation member and an actuating member. The main body contains an alarm sound emitting unit and a switch for operating the alarm sound emitting unit. The operation member is detached from the main body in an axial direction of the main body, and thereby the switch is closed. A locking member is provided in the main body and is displaceable between a locking position for preventing the detachment of the operation member and an unlocking position for allowing the detachment of the operation member. The actuating member drives the locking member to the unlocking position in accompany with either an action of grasping the main body in a radial direction by hand or an action of relative movement of the operation member and the main body grasped by hand in the axial direction of the main body.
Abstract:
A screw vacuum pump which allows reduced power, lower inside gas temperature, and reduced discharging time. The pump has a pair of screw rotors rotatively engaged with each other in a pump casing to discharge a gas along a longitudinal direction of the pump. Each rotor has three types of helical teeth serially located in a longitudinal direction of the rotor and different from each other in theoretical displacement volume. A bypass conduit communicating with a delivery side of the pump is connected via a first check valve to a first intermediate space defined between the first helical teeth and the second helical teeth and via a second check valve to a second intermediate space defined between the second helical teeth and the third helical teeth. The gas is compressed at the third stage to half the first stage volume before a discharge port opens.
Abstract:
A borate-based crystal excellent in uniformity and reliability, which is useful as an optical wavelength conversion device, etc., and can be easily produced at low cost in a short period of time, by the steps of dissolving water-soluble starting materials in water to prepare an aqueous solution, evaporating water in the aqueous solution followed by sintering or evaporating the water and not sintering, thereby forming a crystal growth material, and melting the resultant material to grow a crystal. Further, a highly reliable laser oscillation apparatus can be achieved by using this crystal as an optical wavelength conversion device.
Abstract:
According to the present invention, an air cooling dry vacuum pump has an excellent heat exchangeability and is capable of discharging clean exhaust gases, allowing an installation space to be reduced due to a small and compact size, and reduced in weight, noise, manufacturing cost, and equipment cost. The vacuum pump includes a rotor (2), rotating by receiving a driving force of a motor (M) as a driving source of rotation, being received in a casing 1 having an inlet (1a) of fluid and an outlet (1b) of the fluid. An air supplying means is provided at one end (1c) in an axial direction (I) of the casing. The casing is formed into a duplex tube structure having an inner tube (4) receiving the rotor (2) rotatably and an outer tube (5) around the inner tube. An air duct (7) for flowing cooling air (W) by the air supplying means is provided between the inner tube and the outer tube along the axial direction (I).
Abstract:
In a wavelength converting method, an ambient that is in contact with a surface of a non-linear optical crystal from which wavelength-converted light is outputted is a gas that is lower in content of nitrogen than air. A wavelength converting device includes a device for controlling the ambient in contact with a surface of the non-linear optical crystal from which the wavelength-converted light is outputted so the ambient is lower in nitrogen than air. A laser machining device includes the wavelength converting device.
Abstract:
A dry vacuum pump that includes a casting having an inner cylinder communicating with an inlet and an outlet of the pump, shafts supported by the casting, spiral toothed parts formed on the shaft a plurality of screw rotors each of which includes the shaft and the spiral toothed parts received in the inner cylinder intermeshing with each other. Timing gears each of which are attached to the respective shafts of the screw rotors that intermesh with each other. Locking mechanisms for fixing the timing gears to the shaft. Both of the shaft and the toothed part are made of spheroidal graphite cast iron containing 20 to 30 wt % of nickel are cast integrally.
Abstract:
A process for the production of a silicon nitride sintered body which comprises heat-treating a stock of silicon nitride sintered body within a temperature range of from the temperature at which the internal friction of the stock exhibits a peculiar peak maximum minus 150.degree. C. to that plus 150.degree. C. A representative used in the process is one which is produced by mixing powdered silicon nitride with powdery sintering aids so as to give a powder mixture comprising 5 to 15% by weight (in terms of oxide) of at least one element selected from the group consisting of rare earth elements and aluminum, 0.5 to 5% by weight (in terms of oxide) of at least one element selected from the group consisting of Mg, Ti and Ca and the balance of Si.sub.3 N.sub.4, molding the powder mixture, and sintering the resulting compact in a nitrogen-containing atmosphere at 1500.degree. to 1700.degree. C.
Abstract translation:一种氮化硅烧结体的制造方法,其特征在于,在从所述坯料的内部摩擦显示出特有的峰值最大值-150℃到+ 150℃的温度的温度范围内,对氮化硅烧结体的原料进行热处理, 该加工过程中使用的代表是通过将粉状氮化硅与粉末状烧结助剂混合制成的代表物,从而得到包含5至15重量%(以氧化物计)至少一种 选自由稀土元素和铝组成的组的元素为0.5〜5重量%(以氧化物计),选自Mg,Ti和Ca中的至少一种元素,余量为Si 3 N 4,将粉末成型 混合,在1500〜1700℃的含氮气氛中烧结。
Abstract:
Silicon nitride sintered bodies consisting of prismatic crystal grains of Si.sub.3 N.sub.4 and/or sialon, equi-axed crystal grains of Si.sub.3 N.sub.4 and/or sialon, a grain boundary phase existing among the prismatic and equi-axed crystal grains and dispersed particles in the grain boundary phase, in which the prismatic crystal grains have an average grain size of 0.3 .mu.m or less in minor axis and an average grain size of 5 .mu.m or less in major axis, the equi-axed crystal grains have an average grain size of 0.5 .mu.m or less and the dispersed particles have an average size of 0.1 .mu.m or less, the volume of the dispersed particles being 0.05% by volume or more based on the total volume of the rest of the sintered body. The silicon nitride sintered bodies have a strength sufficient for use as structural materials of machine parts or members, with a minimized scattering of the strength as well as high reliability, superior productivity and advantageous production cost.
Abstract translation:由Si 3 N 4和/或赛隆的棱柱状晶粒构成的氮化硅烧结体,Si 3 N 4等离子晶粒和/或赛隆,棱晶相和等轴晶粒中存在的晶界相和晶界相中的分散粒子 其中棱柱晶粒的短轴平均粒径为0.3μm以下,长轴的平均粒径为5μm以下,等轴晶粒的平均粒径为0.5μm m以下,分散粒子的平均粒径为0.1μm以下,相对于烧结体的其余部分的总体积,分散粒子的体积为0.05体积%以上。 氮化硅烧结体具有足以用作机械部件或部件的结构材料的强度,其强度的极小散射以及高可靠性,优异的生产率和有利的生产成本。
Abstract:
The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate including a support substrate dissoluble in hydrofluoric acid and a single crystal film arranged on a side of a main surface of the support substrate, a coefficient of thermal expansion in the main surface of the support substrate being more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal, forming a GaN-based film on a main surface of the single crystal film arranged on the side of the main surface of the support substrate, and removing the support substrate by dissolving the support substrate in hydrofluoric acid. Thus, the method of manufacturing a GaN-based film capable of efficiently obtaining a GaN-based film having a large main surface area, less warpage, and good crystallinity, as well as a composite substrate used therefor are provided.
Abstract:
The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in a main surface is more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a side of the main surface of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided.