公开(公告)号：JPS6418993A

公开(公告)日：1989-01-23

申请号：JP17365287

申请日：1987-07-11

Applicant: NGK INSULATORS LTD

Inventor： ABE HIROAKI ,  TOYODA SHUHEI

IPC: C30B15/00 ,  C30B29/34

Abstract: PURPOSE:To obtain the titled single crystal of stabilized quality in high yield, by solidifying, in the form of gamma-Bi12SiO20, the residual feedstock in a crucible after growing Bi12SiO20 single crystal to prevent crucible deformation. CONSTITUTION:A Bi12SiO20 feedstock is put in a crucible 2 set up within a furnace itself 3 and its cover 4 and heated through a high-frequency coil 5 to effect melting to prepare a molten liquid 1. Thence, the seed single crystal 7 at the tip of a lifting shaft 6 is brought into contact with this molten liquid 1 followed by lifting to make Bi12SiO20 single crystal 8 at the tip of the single crystal 7. Small pieces of Bi2O3, SiO2 or compound thereof is then added to the molten liquid 1 left in the crucible 2 to separate gamma-Bi12SiO20 phase out followed by solidification. The resulting solidified product is additionally incorporated with the feedstock followed by melting again, and growing Bi12SiO20 single crystal in a similar way to that mentioned above.

公开(公告)号：JP2004281905A

公开(公告)日：2004-10-07

申请号：JP2003074004

申请日：2003-03-18

Applicant: Ngk Insulators Ltd ,  日本碍子株式会社

Inventor： TOYODA SHUHEI ,  ASANO MURAHITO ,  IWASAKI YASUNORI

IPC: H01L31/10

Abstract: PROBLEM TO BE SOLVED: To improve the BER of an output device of a light receiving element, by making nearly equal to each other the current-loop distances present in its photodiode array, and by reducing its crosstalk.
SOLUTION: The output device of the light receiving element has a photodiode array substrate 13 having a formed photodiode array 15, and has an output substrate having an amplifying circuit for amplifying the output signals outputted from respective photodiodes 16. Further, the current-loop distance ranging from a common electrode 19 to each photodiode 16 and the current-loop distance of each signal electrode 18 connected with each photodiode 16 are made nearly equal to each other.
COPYRIGHT: (C)2005,JPO&NCIPI

公开(公告)号：JP2004205961A

公开(公告)日：2004-07-22

申请号：JP2002377302

申请日：2002-12-26

Applicant: Ngk Insulators Ltd ,  日本碍子株式会社

Inventor： TOYODA SHUHEI ,  FUKUYAMA MASASHI ,  IWASAKI YASUNORI

IPC: G02B6/42 ,  H01L23/02 ,  H01L31/02 ,  H01S5/022

Abstract: PROBLEM TO BE SOLVED: To provide an optical element package which has a sealed structure facilitating and stabilizing sealing, is miniaturized, reduces the number of parts, improves yield and is capable of efficiently propagating (transmitting) light.
SOLUTION: In an optical element package 10 provided with a package 2 having two or more input/output openings 3, an optical element 1 housed inside the package 2, a connecting member 4a for ensuring optical connection between the optical element 1 and external equipment and a sealed structure 5a for sealing the input/output openings 3 and air-tightly holding the optical element 1 inside the package 2, the connecting member 4a comprises the sealed structure by closing the input/output openings 3 of the package 2 with at least its one part.
COPYRIGHT: (C)2004,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种具有促进和稳定密封的密封结构的光学元件封装，其小型化，减少部件数量，提高产量并能够有效地传播（传输）光。 解决方案：在设置有具有两个或更多个输入/输出开口3的封装2的光学元件封装10中，容纳在封装2内部的光学元件1，用于确保光学元件1和 外部设备和用于密封输入/输出开口3并将光学元件1气密地保持在包装2内部的密封结构5a，连接构件4a包括通过将包装2的输入/输出开口3关闭的密封结构， 至少其一部分。 版权所有（C）2004，JPO＆NCIPI

公开(公告)号：JP2000275588A

公开(公告)日：2000-10-06

申请号：JP8231899

申请日：1999-03-25

Applicant: NGK INSULATORS LTD

Inventor： FUWA TORU ,  TOYODA SHUHEI

IPC: G02F1/035

Abstract: PROBLEM TO BE SOLVED: To decrease overetching of a buffer layer to improve the adhesion property of electrodes, and to avoid undesirable influences of a base layer on a waveguide by using Cr for the lowermost layer of the base layer and annealing the buffer layer after etching the buffer layer. SOLUTION: A SiO2 buffer layer 2 is formed by sputtering on a LiNbO3 substrate 1 having an optical waveguide 6 formed by diffusion of Ti, and a base layer 3 is formed by vapor deposition on the buffer layer 2. The base layer 3 is formed as three layers of Cr/Ni/Au, in which the Cr layer is formed to improve the adhesion property with the buffer layer 2. A resist film 4 of a specified pattern is formed and an Au electrode layer 5 is formed by plating. Then the resist film 4 is removed by peeling to obtain an electrode pattern. After the base layer and the SiO2 buffer layer are etched, the buffer layer 2 is annealed.

公开(公告)号：JPH11271560A

公开(公告)日：1999-10-08

申请号：JP7803198

申请日：1998-03-25

Applicant: Ngk Insulators Ltd ,  日本碍子株式会社

Inventor： KONDO JIYUNGO ,  TOYODA SHUHEI

IPC: G02B6/30

Abstract: PROBLEM TO BE SOLVED: To provide the joining method which can accurately secure a gap of specific width between the joined surfaces of the optical fiber array and optical waveguide chip and the inspecting method for the gap between the joined surfaces.
SOLUTION: In this joining method, a CCD camera 40 is used to observe the end of a groove 30b in an end part 16b through the inside of a transparent substrate 16A at a specific intersection angle θ1 with the end part 16b of the substrate 16A. At the same time, the upper end part of an optical waveguide 22 on an end surface 14a is observed. Consequently, the distance between the both, namely, the width (w) of an apparent gap is measured. By using a correlation chart of the width (w) of the apparent gap and the width of the real gap which is previously found by a plotting method, while the width W of the real gap obtained by being expressed from the width (w) of the apparent gap is grapsed, a positioning jig is operated to adjust the gap to a gap of desired width.
COPYRIGHT: (C)1999,JPO

Abstract translation: 要解决的问题：提供可以准确地确保光纤阵列和光波导芯片的接合表面之间的特定宽度间隙的接合方法以及接合表面之间的间隙的检查方法。 解决方案：在该接合方法中，使用CCD照相机40，通过透明基板16A的内部，以与基板16A的端部16b成规定的交叉角度θ1观察端部16b的槽30b的端部。 同时，观察端面14a上的光波导22的上端部。 因此，测量两者之间的距离，即表观间隙的宽度（w）。 通过使用通过绘制方法先前发现的视差间隙的宽度（w）和实际间隙的宽度的相关图，而实际间隙的宽度W由宽度（w） 表观间隙变钝，操作定位夹具以将间隙调整到所需宽度的间隙。

公开(公告)号：JP2505542B2

公开(公告)日：1996-06-12

申请号：JP18895188

申请日：1988-07-28

Applicant: NGK INSULATORS LTD

Inventor： ABE HIROAKI ,  TOYODA SHUHEI

IPC: G01R15/24 ,  G01R33/032 ,  G02B5/30 ,  G02B27/28 ,  G02F1/09

公开(公告)号：JPH0617928B2

公开(公告)日：1994-03-09

申请号：JP4637087

申请日：1987-02-27

Applicant: NGK INSULATORS LTD

Inventor： KAWAGUCHI SHOGO ,  TOYODA SHUHEI

IPC: G02F1/01 ,  G02B7/00

公开(公告)号：JPH0238880A

公开(公告)日：1990-02-08

申请号：JP18895188

申请日：1988-07-28

Applicant: NGK INSULATORS LTD

Inventor： ABE HIROAKI ,  TOYODA SHUHEI

IPC: G01R15/24 ,  G01R33/032 ,  G02B5/30 ,  G02B27/28 ,  G02F1/09

Abstract: PURPOSE:To reduce an attenuation factor of transmission light in substance by laminating singe crystal elements right and left in optical rotation at the right angle to the direction of transmitting light to minimize a reflection rate of the transmission light on an end face of the singe crystal elements. CONSTITUTION:Optical elements employ Bi12SiO20 and B12GeO20 and the like. They are a single crystal element having a right optical rotation and a magnetooptical rotation and a single crystal element with a left optical rotation and magnetooptical rotation respectively. To facilitate the assembling, a relative angle of inclination is set at 45 deg. between a polarizer 4 and an analyzer 6 sandwitching an optical element 2 and to detect the intensity of a magnetic field at the maximum sensitivity, the length of the crystal elements is adjusted to lR for the element 2R and lL for the element 2L so that a natural angle of rotation psi of transmission light of each signal crystal element reaches a multiple of 90 deg.. This enables detection of the intensity of a magnetic field and a current generated by the magnetic field at the maximum sensitivity and without detection errors attributed to a change in temperature from the intensity of light as received with a receiver 8 via the analyzer 6.

公开(公告)号：JPH01244376A

公开(公告)日：1989-09-28

申请号：JP7111488

申请日：1988-03-25

Applicant: NGK INSULATORS LTD

Inventor： MATSUZAWA MOTOICHIRO ,  KOZUKA YOSHINARI ,  TOYODA SHUHEI ,  KAWAGUCHI SHOGO ,  MATSUURA MASAMI

IPC: G01R15/24 ,  G02B6/32 ,  G02B6/34 ,  G02B6/36 ,  G02F1/03

Abstract: PURPOSE:To stabilize the characteristics even for the change in temperature conditions, by providing a grove part for fixing optical elements in a fixing stage, and constituting an optical part. CONSTITUTION:An electrode is formed on an electro-optic crystal 31 comprising LiNbO3. An alumina ferrule 32 supports an optical fiber. A rutile crystal 33 that is a polarizer/analyzer and a rod lens 34 are attached to the ferrule 32 so as to form a unitary body. Thus a composite optical element A is obtained. A phase difference plate 36 comprising a rock crystal is stuck to a reflecting mirror 35. A glass rod 37 is formed as a unitary body. Thus a composite optical element B is formed. The composite optical elements A and B are bonded to an L-shaped ceramic fixing stage 30 having the depressed center using a resin. Therefore, the optical path is not changed even if bending or twisting is generated by the deformation and the like of the synthetic resin, because each optical element is supported with the fixing stage. Thus, the characteristics are stabilized even for the change in temperature conditions from low temperature to high temperature.

公开(公告)号：JPH01234399A

公开(公告)日：1989-09-19

申请号：JP5824488

申请日：1988-03-14

Applicant: NGK INSULATORS LTD

Inventor： ABE HIROAKI ,  TOYODA SHUHEI

IPC: C30B15/00 ,  C30B29/32 ,  C30B29/34

Abstract: PURPOSE:To obtain a high-quality single crystal which is free from internal defects and cracks by limiting the temp. gradient from the surface of a raw material melt up to the specific region in the upper part in the pulling-up direction of the single crystal at the time of producing the single crystal of Bi12SiO20 or Bi12GeO20 by a pulling up method. CONSTITUTION:The following conditions are set at the time of producing the single crystal of the Bi12SiO20 or Bi12GeO20 by applying the pulling up method: The temp. gradient from the surface of the melt in a crucible in which the raw material for the above-mentioned single crystal is charged up to 10mm in the upper part in the pulling-up direction of the single crystal is adjusted to 50-75 deg.C/cm and the temp. gradient up to 150mm in succession thereto is adjusted to