公开(公告)号：EP2519984A1

公开(公告)日：2012-11-07

申请号：EP11715468.2

申请日：2011-04-13

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： BEMMERL, Thomas ,  JEREBIC, Simon ,  PINDL, Markus

IPC: H01L33/44

CPC classification number: H01L24/32 ,  H01L21/56 ,  H01L23/3142 ,  H01L24/83 ,  H01L25/167 ,  H01L33/06 ,  H01L33/32 ,  H01L33/44 ,  H01L33/507 ,  H01L33/54 ,  H01L33/56 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83951 ,  H01L2924/12041 ,  H01L2924/1434 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2933/005 ,  H01L2933/0066 ,  H01L2933/0091 ,  H05K7/02 ,  H01L2924/00

Abstract: The invention relates to an electronic arrangement (1) comprising a carrier (2), on which at least one connection area (6) is arranged. At least one electronic component ( 3a, 3b, 3c) is fixed on the connection area (6) by means of a contact material (4). A covering area (5) surrounds the connection area (6) on the carrier (2). At least one covered region (15, 16, 17, 18, 19) is covered by a covering material (10). The covering material (10) is designed in such a way that an optical contrast between the covering area (5) and the covered region (15, 16, 17, 18, 19) is minimized.

Abstract translation: 一种电子装置（1），包括载体（2），其上布置有至少一个连接区域（6）。 至少一个电子部件（3a，3b，3c）通过接触材料（4）固定在连接区域（6）上。 覆盖区域（5）围绕载体（2）上的连接区域（6）。 至少一个覆盖区域（15,16,17,18,19）被覆盖材料（10）覆盖。 覆盖材料（10）被设计成使覆盖区域（5）和覆盖区域（15,16,17,18,19）之间的光学对比度最小化。

公开(公告)号：EP2519984B1

公开(公告)日：2019-06-05

申请号：EP11715468.2

申请日：2011-04-13

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： BEMMERL, Thomas ,  JEREBIC, Simon ,  PINDL, Markus

IPC: H01L33/44 ,  H01L33/58

公开(公告)号：EP2586070A1

公开(公告)日：2013-05-01

申请号：EP11727672.5

申请日：2011-06-10

Applicant: Osram Opto Semiconductors Gmbh

Inventor： RAMCHEN, Johann ,  RACZ, David ,  GALLMEIER, Hans-Christoph ,  GRÖTSCH, Stefan ,  JEREBIC, Simon

IPC: H01L33/62 ,  H01L33/46 ,  H01L25/075 ,  H01L33/44 ,  H01L33/50 ,  H01L33/54 ,  H01L31/0232

CPC classification number: H01L33/60 ,  H01L23/295 ,  H01L23/3121 ,  H01L23/60 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0753 ,  H01L25/167 ,  H01L31/0232 ,  H01L33/46 ,  H01L33/54 ,  H01L33/56 ,  H01L33/62 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48471 ,  H01L2224/48479 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01079 ,  H01L2924/05032 ,  H01L2924/05432 ,  H01L2924/12036 ,  H01L2924/181 ,  H01L2924/207 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2224/45099

Abstract: At least one form of embodiment of the invention relates to an optoelectronic semiconductor component (1) comprising a carrier (2) and at least one optoelectronic semi-conductor chip (3) which is mounted on a carrier upper face (20). Said semi-conductor component (1) also comprises at least one connection wire (4) which allows the semiconductor chip (3) to be in electric contact, and at least one cover body (5) which is mounted on the main side of a radiation emitter (30) and which overlaps the connection wire (4). At least one reflecting sealing compound (6) surrounds the semi-conductor chip (3) in the lateral direction and extends at least to the main side of the radiation emitter (30) of the semi-conductor chip (3). The connection wire (4) is totally covered by the reflective sealing compound (6) or totally covered by the reflective sealing compound (6) together with the cover body (5).

公开(公告)号：EP2586069A1

公开(公告)日：2013-05-01

申请号：EP11723914.5

申请日：2011-05-25

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： KRUPPA, Michael ,  JEREBIC, Simon

IPC: H01L33/56 ,  H01L33/54 ,  H01L33/50 ,  H01L33/58

CPC classification number: H01L33/58 ,  B29D11/00442 ,  G02B1/04 ,  G02B27/095 ,  H01L33/483 ,  H01L33/486 ,  H01L33/50 ,  H01L33/501 ,  H01L33/507 ,  H01L33/52 ,  H01L33/54 ,  H01L33/56 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2933/005 ,  H01L2933/0058 ,  C08L75/00 ,  C08L63/00 ,  C08L83/04 ,  H01L2924/00014 ,  H01L2924/00

Abstract: The invention relates to a semiconductor component (2) having an optoelectronic semiconductor chip (2) and an optical element (3) disposed on a radiation passage surface (20) of the semiconductor chip (2). The optical element (3) is based on a highly diffractive polymer material. The invention further relates to a method for producing a semiconductor component.

Abstract translation: 本发明涉及具有光电子半导体芯片（2）和布置在半导体芯片（2）的辐射通道表面（20）上的光学元件（3）的半导体部件（2）。 光学元件（3）基于高度衍射的聚合物材料。 本发明还涉及用于制造半导体部件的方法。

公开(公告)号：EP2532034A1

公开(公告)日：2012-12-12

申请号：EP11714529.2

申请日：2011-04-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： BRUNNER, Herbert ,  GALLMEIER, Hans-Christoph ,  JEREBIC, Simon ,  PREUß, Stephan ,  SCHÖLL, Hansjörg

IPC: H01L33/56

CPC classification number: H01L33/60 ,  H01L33/005 ,  H01L33/46 ,  H01L33/486 ,  H01L33/508 ,  H01L33/56 ,  H01L2924/0002 ,  H01L2933/005 ,  H01L2924/00

Abstract: Various embodiments of the optoelectronic component comprise an optoelectronic semiconductor chip (104) having a contact side (106) and a radiation coupling-out side (108) lying opposite the contact side (106). The optoelectronic component has a chip carrier (102), to which the semiconductor chip (104) is applied via its contact side (106). A radiation conversion element (110) is applied on the radiation coupling-out side (108). Moreover, a potting compound (112) is applied on the chip carrier (102), said potting compound laterally enclosing the semiconductor chip (104) and the radiation conversion element (108). The potting compound (112) is a reflective potting compound (112). It adjoins an upper edge of the radiation conversion element (110) in a substantially flush fashion, such that a top side of the radiation conversion element (110) is free of the potting compound (112).

Abstract translation: 光电子部件的各种实施例包括具有接触侧（106）和位于接触侧（106）对面的辐射耦合输出侧（108）的光电子半导体芯片（104）。 光电子器件具有芯片载体（102），半导体芯片（104）通过其接触侧（106）施加到芯片载体（102）。 辐射转换元件（110）被施加在辐射耦合输出侧（108）上。 此外，在芯片载体（102）上施加封装化合物（112），所述封装化合物横向封装半导体芯片（104）和辐射转换元件（108）。 封装化合物（112）是反射灌封化合物（112）。 它以基本齐平的方式邻接辐射转换元件（110）的上边缘，使得辐射转换元件（110）的顶面没有封装化合物（112）。