公开(公告)号：EP2502460B1

公开(公告)日：2016-02-17

申请号：EP10773021.0

申请日：2010-10-20

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： KAISER, Stephan ,  KUNZ, Thorsten ,  MUSCHAWECK, Julius

IPC: H05B33/08

CPC classification number: H05B33/0869 ,  H05B33/0872

公开(公告)号：EP2561386A1

公开(公告)日：2013-02-27

申请号：EP11709948.1

申请日：2011-03-23

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： BRICK, Peter ,  FRANK, Joachim ,  KAISER, Stephan ,  KUHN, Gerhard ,  MARKYTAN, Ales ,  MUSCHAWECK, Julius ,  NEUGIRG, Christian

IPC: G02B6/00

CPC classification number: G02B6/0035 ,  G02B6/004 ,  G02B6/0041 ,  G02B6/0055 ,  G02B6/0063

Abstract: The invention relates to a surface light guide (1) which has a radiation exit area (10) extending along a main extension plane of the surface light guide and a light guide area (3) that has scattering locations (4) and a coating (5) disposed on the first main surface (31) of the light guide area. A radiation coupled along the main extension plane and impacting the first main surface (31) after having been scattered at the scattering locations (4) comprises an excessive portion of radiation and the coating (5) reduces in a targeted manner an exit of the excessive portion of radiation from the radiation exit area (10). Further disclosed is a planar emitter (100) comprising such a surface light guide.

Abstract translation: 本发明涉及一种表面光导（1），其具有沿着表面光导的主延伸平面延伸的辐射出射区域（10）和具有散射位置（4）的光导区域（3）以及涂层 5）设置在光导区域的第一主表面（31）上。 沿散射位置（4）散射后，沿着主延伸平面耦合并且冲击第一主表面（31）的辐射包括辐射的过量部分，并且涂层（5）以有针对性的方式减少过多的辐射 来自辐射出射区域（10）的部分辐射。 还公开了包括这种表面光导的平面发射器（100）。

公开(公告)号：EP1470573A2

公开(公告)日：2004-10-27

申请号：EP03706270.0

申请日：2003-01-30

Applicant: Osram Opto Semiconductors GmbH

Inventor： FEHRER, Michael ,  HAHN, Berthold ,  HÄRLE, Volker ,  KAISER, Stephan ,  OTTE, Frank ,  PLÖSSL, Andreas

IPC: H01L21/00

CPC classification number: H01L21/76251 ,  B23K26/0054 ,  B23K26/40 ,  B23K2203/172 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  H01L21/2007 ,  H01L24/29 ,  H01L24/83 ,  H01L33/0079 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/29298 ,  H01L2224/83001 ,  H01L2224/8319 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/0106 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/157 ,  H01L2924/15763 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01046 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929

Abstract: The invention relates to a method for producing a semiconductor element, especially a thin-layered element. According to the invention, a semi-conductive layer is separated from a substrate by radiation from a laser beam having a plateau-shaped spatial beam profile. Additionally, the semiconductor layer is applied to a support having an adapted thermal dilatation coefficient before being separated. The invention is particularly suitable for semiconductor layers which contain a nitride-compound semiconductor.

Abstract translation: 本发明涉及用于制造半导体元件，特别是薄层元件的方法。 根据本发明，半导体层通过来自具有平台形空间光束轮廓的激光束的辐射与衬底分离。 此外，半导体层在被分离之前被施加到具有适应的热膨胀系数的支撑件。 本发明特别适用于含有氮化物半导体的半导体层。