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    LEUCHTDIODENCHIP
    31.
    发明公开
    LEUCHTDIODENCHIP 有权

    公开(公告)号：EP2460190A1

    公开(公告)日：2012-06-06

    申请号：EP10732957.5

    申请日：2010-07-13

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： MAUTE, Markus ,  ALBRECHT, Tony ,  KASPRZAK-ZABLOCKA, Anna

    IPC: H01L33/00 ,  H01L33/20 ,  H01L33/44

    CPC classification number: H01L33/20 ,  H01L33/405 ,  H01L33/44 ,  H01L2933/0025

    Abstract: The invention relates to a light-emitting diode chip comprising – a semiconductor body (1) having a first (1A) and a second region (1B); - an active zone (2) within the semiconductor body (1) emitting electromagnetic radiation by means of a radiation output surface (11) at least partially formed by a first main surface (111) of the semiconductor body (1) during operation of the light-emitting diode chip (100); - at least one trench (3) in the semiconductor body (1), wherein parts of the semiconductor body (1) are removed in the region of the trench (3), wherein – the at least one trench extends at least to the active zone (2), - the at least one trench completely encloses the first region (1A) in the lateral direction, and – the second region (1B) completely encloses the at least one trench (3) and the first region (1A) in the lateral direction.

    Abstract translation: 发光二极管芯片本发明涉及一种发光二极管芯片， 具有第一区域（1A）和第二区域（1B）的半导体本体（1）; - 半导体本体（1）内的有源区（2），其借助于至少部分地由半导体本体（1）的第一主表面（111）形成的辐射输出表面（11）发射电磁辐射， 发光二极管芯片（100）; - 在所述半导体本体（1）中的至少一个沟槽（3），其中所述半导体本体（1）的部分在所述沟槽（3）的区域中被去除，其中Δε 所述至少一个沟槽至少延伸至所述有源区（2），所述至少一个沟槽在所述横向方向上完全包围所述第一区域（1A），并且所述至少一个沟槽 第二区域（1B）在横向上完全包围至少一个沟槽（3）和第一区域（1A）。

    VERFAHREN ZUR HERSTELLUNG EINES LEUCHTMITTELS UND LEUCHTMITTEL
    34.
    发明公开
    VERFAHREN ZUR HERSTELLUNG EINES LEUCHTMITTELS UND LEUCHTMITTEL 审中-公开
    用于生产灯泡和灯具

    公开(公告)号：EP2457254A1

    公开(公告)日：2012-05-30

    申请号：EP10734486.3

    申请日：2010-07-16

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： HAHN, Berthold ,  MAUTE, Markus ,  HERRMANN, Siegfried

    IPC: H01L25/16 ,  F21K99/00 ,  H01L25/075 ,  H01L33/00 ,  H01L33/50

    Abstract: The invention specifies a method for manufacturing a light source, having the following steps: provision of a multiplicity of light-emitting diodes (4), wherein each light emitting-diode has a radiolucent carrier (44) and at least two physically isolated semiconductor bodies (41, 42, 43), each semiconductor body (41, 42, 43) is provided for the purpose of producing electromagnetic radiation, the semiconductor bodies (41, 42, 43) can be actuated in isolation from one another and the semiconductor bodies (41, 42, 43) are arranged on the top (44a) of the radiolucent carrier (44), provision of a chip composite (1) comprising CMOS chips (10), wherein each CMOS chip (10) has at least two connection points (2) on the top (10a) thereof, connection of at least one of the light-emitting diodes (4) to one of the CMOS chips (10), wherein the light-emitting diode (4) is arranged on the top (44a) of the radiolucent carrier (44) on the top (10a) of the CMOS chip (10), and each semiconductor body (41, 42, 43) of the light-emitting diode is connected to a connection point (2) of the CMOS chip (10).

    OPTOELEKTRONISCHER HALBLEITERKÖRPER UND OPTOELEKTRONISCHER HALBLEITERCHIP
    37.
    发明公开
    OPTOELEKTRONISCHER HALBLEITERKÖRPER UND OPTOELEKTRONISCHER HALBLEITERCHIP 审中-公开
    光电子半导体本体和光电子半导体芯片

    公开(公告)号：EP2438627A2

    公开(公告)日：2012-04-11

    申请号：EP10723082.3

    申请日：2010-05-21

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： MAUTE, Markus ,  ENGL, Karl

    IPC: H01L33/38

    Abstract: The present application relates to an optoelectronic semiconductor body (1), comprising a front face (120), which is provided to emit and/or receive electromagnetic radiation, a rear face (110), which is located opposite of the front face (120) and which is provided for application on a support plate (7), and an active semiconductor layer sequence (2), which, in the direction from the rear face (110) to the front face (120), comprises a layer of a first conductivity type (21), an active layer (22), and a layer of a second conductivity type (23) in this order. The present application further relates to a semiconductor chip comprising such a semiconductor body (1).

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