公开(公告)号：EP2593973B1

公开(公告)日：2017-11-22

申请号：EP11725748.5

申请日：2011-06-16

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： SCHNEIDER, Markus ,  RACZ, David ,  RAMCHEN, Johann

IPC: H01L33/60 ,  H01L33/46 ,  H01L33/50 ,  H01L33/62 ,  H01L33/56 ,  H01L33/20

CPC classification number: H01L33/60 ,  H01L33/20 ,  H01L33/46 ,  H01L33/50 ,  H01L33/56 ,  H01L33/62 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2924/1715 ,  H01L2924/3025 ,  H01L2924/00

公开(公告)号：EP3378105A1

公开(公告)日：2018-09-26

申请号：EP16801411.6

申请日：2016-11-17

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： PUST, Philipp ,  RACZ, David ,  KÖLPER, Christopher

IPC: H01L33/08 ,  H01L33/50 ,  H01L25/075

Abstract: The invention relates to a semiconductor component having a semiconductor chip for producing an electromagnetic primary radiation having a first peak wavelength, having a first conversion element, which has a quantum structure, wherein the quantum structure is designed to shift the primary radiation at least partially into a secondary radiation having a second peak wavelength, wherein a second conversion element is provided, which has a luminescent substance, wherein the luminescent substance is designed to shift an electromagnetic radiation into a tertiary radiation having a dominant wavelength, wherein the first conversion element is designed to produce a secondary radiation that has a peak wavelength that is smaller than the dominant wavelength of the tertiary radiation.

公开(公告)号：EP2586070A1

公开(公告)日：2013-05-01

申请号：EP11727672.5

申请日：2011-06-10

Applicant: Osram Opto Semiconductors Gmbh

Inventor： RAMCHEN, Johann ,  RACZ, David ,  GALLMEIER, Hans-Christoph ,  GRÖTSCH, Stefan ,  JEREBIC, Simon

IPC: H01L33/62 ,  H01L33/46 ,  H01L25/075 ,  H01L33/44 ,  H01L33/50 ,  H01L33/54 ,  H01L31/0232

CPC classification number: H01L33/60 ,  H01L23/295 ,  H01L23/3121 ,  H01L23/60 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0753 ,  H01L25/167 ,  H01L31/0232 ,  H01L33/46 ,  H01L33/54 ,  H01L33/56 ,  H01L33/62 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48471 ,  H01L2224/48479 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01079 ,  H01L2924/05032 ,  H01L2924/05432 ,  H01L2924/12036 ,  H01L2924/181 ,  H01L2924/207 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2224/45099

Abstract: At least one form of embodiment of the invention relates to an optoelectronic semiconductor component (1) comprising a carrier (2) and at least one optoelectronic semi-conductor chip (3) which is mounted on a carrier upper face (20). Said semi-conductor component (1) also comprises at least one connection wire (4) which allows the semiconductor chip (3) to be in electric contact, and at least one cover body (5) which is mounted on the main side of a radiation emitter (30) and which overlaps the connection wire (4). At least one reflecting sealing compound (6) surrounds the semi-conductor chip (3) in the lateral direction and extends at least to the main side of the radiation emitter (30) of the semi-conductor chip (3). The connection wire (4) is totally covered by the reflective sealing compound (6) or totally covered by the reflective sealing compound (6) together with the cover body (5).