公开(公告)号：US09749553B2

公开(公告)日：2017-08-29

申请号：US14461122

申请日：2014-08-15

Applicant: Semiconductor Components Industries, LLC

Inventor： Swarnal Borthakur ,  Ulrich Boettiger ,  Sergey Velichko

IPC: H04N5/225 ,  H04N5/33 ,  H04N5/369 ,  H01L27/146

CPC classification number: H04N5/332 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14647 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H04N5/369 ,  H01L2924/00014 ,  H01L2924/00

Abstract: An imaging system may include a first image sensor die stacked on top of a second image sensor die. A pixel array may include first pixels having photodiodes in the first image sensor die and second pixels having photodiodes in the second image sensor die. The first pixels may be optimized to detect a first type of electromagnetic radiation (e.g., visible light), whereas the second pixels may be optimized to detect a second type of electromagnetic radiation (e.g., infrared light). Light guide channels may be formed in the first image sensor die to help guide incident light to the photodiodes in the second image sensor substrate. The first and second image sensor dies may be bonded at a wafer level. A first image sensor wafer may be a backside illumination image sensor wafer and a second image sensor wafer may be a front or backside illumination image sensor wafer.

公开(公告)号：US20150381907A1

公开(公告)日：2015-12-31

申请号：US14316648

申请日：2014-06-26

Applicant: Semiconductor Components Industries, LLC

Inventor： Ulrich Boettiger ,  Richard Scott Johnson

IPC: H04N5/33 ,  H01L27/146 ,  H01L31/0232

CPC classification number: H04N5/332 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14643 ,  H01L31/02327

Abstract: An image sensor may include a pixel array having visible and infrared imaging pixels for simultaneously detecting light in the visible and infrared spectral ranges. The pixel array may include an array of photodiodes, an array of filter elements formed over the photodiodes, and an array of microlenses formed over the array of filter elements. The filter elements may include infrared cutoff filter elements that block infrared light while passing visible light. The infrared cutoff filter elements may be formed from a patterned layer of infrared blocking material. Each visible imaging pixel includes a portion of the infrared blocking material and a color filter element. Each infrared imaging pixel is aligned with an opening in the infrared blocking material. The opening may be filled with an infrared pass filter element that passes infrared light while blocking visible light.

Abstract translation: 图像传感器可以包括具有可见光和红外成像像素的像素阵列，用于同时检测可见光和红外光谱范围内的光。 像素阵列可以包括光电二极管的阵列，形成在光电二极管上的滤波器元件的阵列，以及形成在过滤元件阵列上的微透镜阵列。 过滤元件可以包括在通过可见光的同时阻挡红外光的红外截止滤光元件。 红外截止滤光元件可以由图案化的红外阻挡材料层形成。 每个可见成像像素包括红外阻挡材料的一部分和滤色器元件。 每个红外成像像素与红外阻挡材料中的开口对准。 开口可以填充有透过红外光同时阻挡可见光的红外线通过滤光元件。

公开(公告)号：US20150281538A1

公开(公告)日：2015-10-01

申请号：US14225129

申请日：2014-03-25

Applicant: Semiconductor Components Industries, LLC

Inventor： Ulrich Boettiger ,  Swarnal Borthakur ,  Marc Sulfridge ,  Rick Lake

IPC: H04N5/225 ,  H04N9/097 ,  H04N5/232

CPC classification number: H04N5/2258 ,  H04N5/23232 ,  H04N5/23245 ,  H04N5/247

Abstract: An imaging system may include multiple imaging arrays. One or more of the arrays may be a low-power array that detects trigger events in observed scenes and, in response to the detection of a trigger event, activates one or more primary imaging arrays. One or more of the arrays may be a polarization sensing array, a hyperspectral array, a stacked photodiode array, a wavefront sensing array, a monochrome array, a single color array, a dual color array, or a full color array. In at least one embodiment, image data from a stacked photodiode imaging array may be enhanced using image data from a separate monochrome imaging array. In at least another embodiment, image data from a wavefront sensing array may provide focus detection for a full color array.

Abstract translation: 成像系统可以包括多个成像阵列。 一个或多个阵列可以是检测观察到的场景中的触发事件的低功率阵列，并且响应于触发事件的检测，激活一个或多个主要成像阵列。 一个或多个阵列可以是偏振感测阵列，高光谱阵列，堆叠光电二极管阵列，波阵面感测阵列，单色阵列，单色阵列，双色阵列或全色阵列。 在至少一个实施例中，可以使用来自单独的单色成像阵列的图像数据来增强来自堆叠的光电二极管成像阵列的图像数据。 在至少另一个实施例中，来自波前感测阵列的图像数据可以为全色阵列提供焦点检测。

公开(公告)号：US09041840B2

公开(公告)日：2015-05-26

申请号：US13972249

申请日：2013-08-21

Applicant: Semiconductor Components Industries, LLC

Inventor： Swarnal Borthakur ,  Scott Churchwell ,  Ulrich Boettiger ,  Marc Sulfridge ,  Andrew Perkins ,  Rick Lake

IPC: H04N5/335 ,  H04N5/225 ,  H01L27/146

CPC classification number: H04N5/335 ,  H01L27/14612 ,  H01L27/14616 ,  H01L27/14641 ,  H01L2224/16225 ,  H01L2224/73267 ,  H04N5/2253 ,  H04N5/2254

Abstract: An image sensor unit may have a backside-illuminated imager and an image co-processor stacked together. The image co-processor may be mounted in a cavity in a permanent carrier. The permanent carrier may include fluid channels that allow cooling fluid to flow past the image co-process and past the imager, thereby removing excess heat generated by the image sensor unit during operation.

Abstract translation: 图像传感器单元可以具有背面照射的成像器和图像协处理器堆叠在一起。 图像协处理器可以安装在永久载体中的空腔中。 永久性载体可以包括允许冷却流体流过图像协同处理并经过成像器的流体通道，从而在操作期间消除由图像传感器单元产生的多余的热量。