Abstract:
A method for selective metallization of a surface of a polymer article is provided. The polymer article contains a base polymer and at least one metal compound dispersed in the base polymer. The method includes gasifying at least a part of a surface of the polymer article by irradiating the surface with an energy source, and forming at least one metal layer on the surface of the polymer article by chemical plating. The metal compound contains a tin oxide doped with at least one doping element selected from a group including: V, Sb, In, and Mo.
Abstract:
A resin composition, a metal-resin composite formed with the resin composition and a metal substrate and a preparation method and use thereof, and an electronic product shell using the resin composition are provided. The resin composition comprises a base resin, a modified resin and a fiber, wherein the base resin is one or two or more of a polyarylene sulfide resin, a polyether resin, and a polyester resin, and the modified resin has a melting point that is 3-24°C higher than the glass transition temperature of the base resin.
Abstract:
A method for metalizing a polymer substrate and a polymer article prepared thereof. First a polymer substrate having a base polymer and at least one metal compound dispersed in the base polymer is provided. A surface of the polymer substrate is then irradiated with an energy beam such that a water contact angle of the surface of the polymer substrate is at least 120°. And then the surface of the polymer substrate is subjected to chemical plating.
Abstract:
A method for metalizing a polymer substrate and a polymer article prepared thereof. First a polymer substrate having a base polymer and at least one metal compound dispersed in the base polymer is provided. A surface of the polymer substrate is then irradiated with an energy beam such that a water contact angle of the surface of the polymer substrate is at least 120°. And then the surface of the polymer substrate is subjected to chemical plating.
Abstract:
A method for preparing a ceramic copper clad laminate is provided, including following steps: providing a copper material; forming a copper oxide layer on a surface of the copper material; thermally treating the copper material on which the copper oxide layer is formed, to diffuse oxygen atoms in the copper material; removing the copper oxide layer on the thermally treated copper material; and soldering the copper-oxide-layer-removed copper material to a ceramic substrate to obtain a ceramic copper clad laminate.
Abstract:
A semiconductor refrigeration chip and a method for manufacturing same are provided. The method includes: providing a semiconductor refrigeration assembly, where the semiconductor refrigeration assembly includes a first insulating and heat-conducting layer and a second insulating and heat-conducting layer provided opposite to each other and a semiconductor layer arranged between the first insulating and heat-conducting layer and the second insulating and heat-conducting layer, a side of the semiconductor refrigeration assembly provided with the first insulating and heat-conducting layer is a cold end, and a side of the semiconductor refrigeration assembly provided with the second insulating and heat-conducting layer is a hot end; and forming a packaging structure, and causing the packaging structure to cover a side wall of the semiconductor refrigeration assembly and define a first groove with the first insulating and heat-conducting layer, to obtain the semiconductor refrigeration chip.