公开(公告)号：US20240222158A1

公开(公告)日：2024-07-04

申请号：US18608134

申请日：2024-03-18

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk ,  Nadia Ben Mohamed

IPC: H01L21/67 ,  H01L21/762

CPC classification number: H01L21/67092 ,  H01L21/67023 ,  H01L21/76254

Abstract: A system for fracturing a plurality of wafer assemblies, one of the wafers of each assembly comprising a plane of weakness and each assembly comprising a peripheral lateral groove comprises: a cradle for keeping the assemblies of the plurality of assemblies spaced apart and parallel to one another, along a storage axis; a separation device for applying separating forces in the peripheral groove of an assembly arranged in a fracture zone of the separating device, the separating force aiming to separate the wafers of the assembly from one another so as to initiate its fracture at the plane of weakness; and a drive device configured to move along the storage axis of the cradle opposite the separating device so as to successively place an assembly of the cradle in the fracture zone of the separation device.

公开(公告)号：US12002690B2

公开(公告)日：2024-06-04

申请号：US17435899

申请日：2020-02-26

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk ,  Nadia Ben Mohamed

IPC: H01L21/67 ,  H01L21/762

CPC classification number: H01L21/67092 ,  H01L21/67023 ,  H01L21/76254

Abstract: A system for fracturing a plurality of wafer assemblies, one of the wafers of each assembly comprising a plane of weakness and each assembly comprising a peripheral lateral groove comprises: a cradle for keeping the assemblies of the plurality of assemblies spaced apart and parallel to one another, along a storage axis; a separation device for applying separating forces in the peripheral groove of an assembly arranged in a fracture zone of the separating device, the separating force aiming to separate the wafers of the assembly from one another so as to initiate its fracture at the plane of weakness; and a drive device configured to move along the storage axis of the cradle opposite the separating device so as to successively place an assembly of the cradle in the fracture zone of the separation device.

公开(公告)号：US11923239B2

公开(公告)日：2024-03-05

申请号：US17663898

申请日：2022-05-18

Applicant: Soitec

Inventor： Eric Desbonnets ,  Ionut Radu ,  Oleg Kononchuk ,  Jean-Pierre Raskin

IPC: H01L21/762 ,  H01L21/02 ,  H01L21/84 ,  H01L27/12 ,  H01L29/06 ,  H01L29/786

CPC classification number: H01L21/76283 ,  H01L21/02002 ,  H01L21/76224 ,  H01L21/84 ,  H01L27/1203 ,  H01L27/1218 ,  H01L29/0649 ,  H01L29/78603 ,  H01L21/76264

Abstract: Substrates for microelectronic radiofrequency devices may include a substrate comprising a semiconductor material. Trenches may be located in an upper surface of the substrate, at least some of the trenches including a filler material located within the respective trench. A resistivity of the filler material may be 10 kOhms·cm or greater. A piezoelectric material may be located on or above the upper surface of the substrate. Methods of making substrates for microelectronic radiofrequency devices may involve forming trenches in an upper surface of a substrate including a semiconductor material. A filler material may be placed in at least some of the trenches, and a piezoelectric material may be placed on or above the upper surface of the substrate.

公开(公告)号：US11881429B2

公开(公告)日：2024-01-23

申请号：US17439300

申请日：2020-02-26

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk ,  Nadia Ben Mohamed

IPC: H01L21/762 ,  H01L21/265 ,  H01L21/78

CPC classification number: H01L21/76254 ,  H01L21/26506 ,  H01L21/7806

Abstract: A method for transferring a useful layer to a carrier substrate, includes the following steps: a) providing a donor substrate including a buried weakened plane; b) providing a carrier substrate; c) joining the donor substrate, by its front face, to the carrier substrate along a bonding interface so as to form a bonded structure; d) annealing the bonded structure in order to apply a weakening thermal budget thereto and to bring the buried weakened plane to a defined level of weakening; and e) initiating a splitting wave in the weakened plane by applying a stress to the bonded structure, the splitting wave self-propagating along the weakened plane to result in the useful layer being transferred to the carrier substrate. The splitting wave is initiated when the bonded structure is subjected to a temperature between 150° C. and 250° C.

公开(公告)号：US11876015B2

公开(公告)日：2024-01-16

申请号：US17435631

申请日：2020-02-26

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk ,  Nadia Ben Mohamed ,  Franck Colas

IPC: H01L21/762 ,  H01L21/78 ,  H01L21/304

CPC classification number: H01L21/76254 ,  H01L21/3043 ,  H01L21/7806

Abstract: A method for transferring a useful layer to a carrier substrate comprises: joining a front face of a donor substrate to a carrier substrate along a bonding interface to form a bonded structure; annealing the bonded structure to apply a weakening thermal budget thereto and bring a buried weakened plane in the donor substrate to a defined level of weakening, the anneal reaching a maximum hold temperature; and initiating a self-sustained and propagating splitting wave in the buried weakened plane by applying a stress to the bonded structure to lead to the useful layer being transferred to the carrier substrate. The initiation of the splitting wave occurs when the bonded structure experiences a thermal gradient defining a hot region and a cool region of the bonded structure, the stress being applied locally in the cool region, and the hot region experiencing a temperature lower than the maximum hold temperature.

公开(公告)号：USRE49365E1

公开(公告)日：2023-01-10

申请号：US16920274

申请日：2020-07-02

Applicant: Soitec

Inventor： Oleg Kononchuk ,  William Van Den Daele ,  Eric Desbonnets

IPC: H03H3/02 ,  H03H3/08 ,  H01L23/06 ,  H01L41/04 ,  H01L21/306 ,  H01L21/762 ,  H01L23/66 ,  H01L21/322

Abstract: A structure for radiofrequency applications includes: a support substrate of high-resistivity silicon comprising a lower part and an upper part having undergone a p-type doping to a depth D; a mesoporous trapping layer of silicon formed in the doped upper part of the support substrate. The depth D is less than 1 micron and the trapping layer has a porosity rate of between 20% and 60%.

公开(公告)号：US11219851B2

公开(公告)日：2022-01-11

申请号：US16341390

申请日：2017-09-21

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk

IPC: B01D50/00 ,  B01D46/00 ,  H01L21/67 ,  B01D39/06

Abstract: A vertical furnace includes a chamber intended for receiving a loading column, an inlet channel for fresh gas, arranged at an upper end of the chamber, the loading column comprising an upper portion, and a central portion for supporting a plurality of substrates. The vertical furnace further comprises a trapping device made of at least one material suitable for trapping all or part of the contaminants present in the fresh gas. The trapping device includes a circular part arranged on the upper part of the loading column, the circular part comprising fins regularly distributed over an upper surface of the circular part in order to increase the contact surface of the trapping device with the fresh gas.

公开(公告)号：US11127624B2

公开(公告)日：2021-09-21

申请号：US16495362

申请日：2018-03-21

Applicant: Soitec

Inventor： Walter Schwarzenbach ,  Oleg Kononchuk ,  Ludovic Ecarnot

IPC: H01L21/762 ,  H01L27/146 ,  H01L31/028 ,  H01L21/02 ,  H01L21/203

Abstract: A semiconductor on insulator type structure, which may be used for a front side type imager, successively comprises, from its rear side to its front side, a semiconductor support substrate, an electrically insulating layer and an active layer comprising a monocrystalline semiconductor material. The active layer is made of a semiconductor material having a state of mechanical stress with respect to the support substrate, and the support substrate comprises, on its rear side, a silicon oxide layer, the thickness of the oxide layer being chosen to compensate bow induced by the mechanical stress between the active layer and the support substrate during cooling of the structure after the formation by epitaxy of at least a part of the active layer on the support substrate.

公开(公告)号：US20210202302A1

公开(公告)日：2021-07-01

申请号：US17190004

申请日：2021-03-02

Applicant: Soitec ,  COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES

Inventor： Didier Landru ,  Nadia Ben Mohamed ,  Oleg Kononchuk ,  Frédéric Mazen ,  Damien Massy ,  Shay Reboh ,  François Rieutord

IPC: H01L21/762 ,  H01L21/324 ,  H01L21/263

Abstract: Substrates may include a useful layer affixed to a support substrate. A surface of the useful layer located on a side of the useful layer opposite the support substrate may include a first region and a second region. The first region may have a first surface roughness, may be located proximate to a geometric center of the surface, and may occupy a majority of an area the surface. The second region may have a second, higher surface roughness, may be located proximate to a periphery of the surface, and may occupy a minority of the area of the surface.

公开(公告)号：US10950491B2

公开(公告)日：2021-03-16

申请号：US16324461

申请日：2017-08-01

Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives ,  Soitec

Inventor： Didier Landru ,  Nadia Ben Mohamed ,  Oleg Kononchuk ,  Frederic Mazen ,  Damien Massy ,  Shay Reboh ,  Francois Rieutord

IPC: H01L21/762 ,  H01L21/324 ,  H01L21/263

Abstract: A useful layer is layered onto a support by a method that includes the steps of forming an embrittlement plane by implanting light elements into a first substrate, so as to form a useful layer between such plane and one surface of the first substrate; applying the support onto the surface of the first substrate so as to form an assembly to be fractured; applying a heat treatment for embrittling the assembly to be fractured; and initiating and propagating a fracture wave into the first substrate along the embrittlement plane. The fracture wave is initiated in a central area of the embrittlement plane and the propagation speed of the wave is controlled so that the velocity thereof is sufficient to cause the interactions of the fracture wave with acoustic vibrations emitted upon the initiation and/or propagation thereof, if any, are confined to a peripheral area of the useful layer.