公开(公告)号：JP2003347238A

公开(公告)日：2003-12-05

申请号：JP2002155507

申请日：2002-05-29

Applicant: Sony Corp ,  ソニー株式会社

Inventor： ASAZUMA YASUNORI ,  NAKAJIMA HIROSHI ,  GOTO OSAMU ,  TOJO TAKESHI

IPC: H01L21/28 ,  H01L21/205 ,  H01L33/22 ,  H01L33/32 ,  H01L33/36 ,  H01L33/38 ,  H01S5/042 ,  H01L33/00

CPC classification number: H01L33/38 ,  H01L2933/0016

Abstract: PROBLEM TO BE SOLVED: To provide a gallium nitride semiconductor device which operates at a low voltage with high reliability. SOLUTION: The GaN semiconductor laser device has irregularities on a p-type GaN contact layer so that a p-side electrode metal film and the p-type GaN contact layer are improved in adhesion between them, increased in a contacting area, and reduced in contact resistance, the metal film is firmly attached to the contact layer as penetrating into recesses of the irregularities, and the metal film is hardly separated from the contact layer. The irregularities formed on all the surface of the contact layer are dispersedly present so as to let two or more irregularities or recesses be located in every region of a width 1 μm through all the surface of the contact layer, furthermore a height difference (level difference) between the top of a projection 46 and the bottom of the recess 48 adjacent to the projection 46 is set larger than the lattice constant of a GaN crystal. Rms of the irregularities (standard deviation of height) located in every region in a 1 μm square is larger than 0.25 nm. COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提供以高可靠性在低电压下操作的氮化镓半导体器件。 解决方案：GaN半导体激光器件在p型GaN接触层上具有不规则性，使得p侧电极金属膜和p型GaN接触层在它们之间的粘附性提高，接触面积增加， 并且接触电阻降低时，金属膜贯穿于凹凸部的凹部中，牢固地附着在接触层上，金属膜几乎不与接触层分离。 形成在接触层的全部表面上的凹凸分散地存在，以便通过接触层的整个表面在宽度为1μm的每个区域中设置两个或更多个凹凸或凹陷，此外，高度差（电平差 ）设置在比GaN晶体的晶格常数大的突起46的顶部和与突出部46相邻的凹部48的底部之间。 位于1μm平方的每个区域的不规则度（标准偏差）的Rms大于0.25nm。 版权所有（C）2004，JPO

公开(公告)号：JP2003069152A

公开(公告)日：2003-03-07

申请号：JP2002168293

申请日：2002-06-10

Applicant: Sony Corp ,  ソニー株式会社

Inventor： TOJO TAKESHI ,  HINO TOMOKIMI ,  ANZAI SHINICHI ,  GOTO OSAMU ,  YABUKI YOSHIBUMI ,  UCHIDA SHIRO ,  IKEDA MASAO

IPC: H01L21/205 ,  H01S5/042 ,  H01S5/22 ,  H01S5/323 ,  H01S5/40

CPC classification number: H01S5/4031 ,  H01S5/0425 ,  H01S5/32341 ,  H01S5/4087

Abstract: PROBLEM TO BE SOLVED: To provide a multibeam semiconductor laser element where the light output of each beam is uniform and alignment is easy.
SOLUTION: The multibeam semiconductor laser element 40 is a GaN-based multibeam semiconductor laser element having four laser stripes 42A to D for emitting laser beams with the same wavelength. Each laser stripe has a p-side common electrode 48 on a mesa 46 formed on a sapphire substrate 44, and has each of active regions 50A to D. Two n-side electrodes 52A and B are provided in a contact layer 54 by the mesa as a common counter electrode opposite to the p-side electrode 48. Distance A between the laser stripes 42A and 42D should be 100 μm or less. Distance B
1 between the laser stripe 42A and the laser side end section of the n-side electrode 52B should be 150 μm or less, and distance B
2 between the laser stripe 42D and the laser side end section of the n-side electrode 52B should be 150 μm or less.
COPYRIGHT: (C)2003,JPO

Abstract translation: 要解决的问题：提供一种多光束半导体激光元件，其中每个光束的光输出均匀并且对准容易。 解决方案：多光束半导体激光元件40是具有四个用于发射具有相同波长的激光束的激光条42A至D的GaN基多光束半导体激光元件。 每个激光条纹在形成在蓝宝石衬底44上的台面46上具有p侧公共电极48，并且具有有源区域50A至D.两个n侧电极52A和B通过台面设置在接触层54中 作为与p侧电极48相对的通用对置电极。激光条42A，42D之间的距离A应为100μm以下。 激光条42A和n侧电极52B的激光侧端部之间的距离B1应为150μm以下，并且激光条42D与n侧电极52B的激光侧端部之间的距离B2应为 150μm以下。

公开(公告)号：JP2003007999A

公开(公告)日：2003-01-10

申请号：JP2001193386

申请日：2001-06-26

Applicant: Sony Corp ,  ソニー株式会社

Inventor： GOTO OSAMU ,  ASANO TAKEHARU ,  TAKEYA MOTONOBU ,  KIJIMA SATORU

IPC: C30B29/38 ,  H01L21/205 ,  H01L29/205 ,  H01L33/32 ,  H01L33/36 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To prevent the occurrence of vertical cracks in stripe-like seed crystals during growing a III-V nitride-based compound semiconductor layer on a horizontally grown III-V nitride-based compound semiconductor layer having a different lattice constant.
SOLUTION: After a first III-V nitride-based compound semiconductor layer 3 is grown on one main surface of a substrate 1, the portions of the layer 3 from the edges of the substrate 1 to prescribed distances from the edges are left on the main surface and, at the same time, stripe-like first III-V nitride- based compound semiconductor layers 3 which become the seed crystals are formed in the inside area of the left layers 3. Then a second III-V nitride-based compound semiconductor layer is horizontally grown by using the stripe-like layers 3 as seed crystals and a III-V nitride-based compound semiconductor layer forming a laser structure is grown on the horizontally grown semiconductor layer.
COPYRIGHT: (C)2003,JPO

Abstract translation: 要解决的问题：为了防止在具有不同晶格常数的水平生长的III-V族氮化物基化合物半导体层上生长III-V族氮化物基化合物半导体层期间在条状晶种中出现垂直裂纹。 解决方案：在基板1的一个主表面上生长第一III-V族氮化物基化合物半导体层3之后，将层3的从基板1的边缘到边缘的规定距离的部分留在主体 并且同时，在左层3的内部区域中形成成为晶种的条纹状的第一III-V族氮化物基化合物半导体层3.然后，将第二III-V族氮化物基化合物半导体 通过使用条状层3作为晶种水平生长层，并且在水平生长的半导体层上生长形成激光结构的III-V族氮化物系化合物半导体层。

公开(公告)号：JP2002374029A

公开(公告)日：2002-12-26

申请号：JP2001182304

申请日：2001-06-15

Applicant: Sony Corp ,  ソニー株式会社

Inventor： YABUKI YOSHIBUMI ,  HINO TOMOKIMI ,  GOTO OSAMU ,  ANZAI SHINICHI ,  TOJO TAKESHI ,  UCHIDA SHIRO ,  IKEDA MASAO

IPC: H01S5/022 ,  H01S5/22 ,  H01S5/323 ,  H01S5/40

Abstract: PROBLEM TO BE SOLVED: To provide a multibeam semiconductor laser device, which can be produced easily, is provided with a configuration for easy diversification and further can be applied to a GaN semiconductor laser device.
SOLUTION: A multibeam semiconductor laser device 10 is composed of semiconductor laser elements 12A and 12B and a submount 14 for mounting the semiconductor laser elements. Each of semiconductor laser elements is provided with a laser stripe 18 on a mesa 16 and has a p-side electrode 20, on a ridge stripe and an n-side electrode 22 on a contact layer by the side of the mesa. A submount is provided with a first junction electrode 24 to be bonded with the p-side electrode 20, while being mutually electrically insulated and a second junction electrode 26 to be bonded with the n-side electrode 22 on a jointing surface 14a with the semiconductor laser elements. The first junction electrode 24 and the second junction electrode 26 are formed from an Al wiring layer and a solder layer. The multi-beam semiconductor laser element provided with a plurality of laser stripes can be formed by bonding the p-side electrode and the first junction electrode, bonding the n-side electrode and the second junction electrode and mounting the semiconductor laser elements on the submount by a junction-down system.
COPYRIGHT: (C)2003,JPO

Abstract translation: 要解决的问题：为了提供容易制造的多光束半导体激光装置，具有易于多样化的结构，并且还可以应用于GaN半导体激光装置。 解决方案：多光束半导体激光装置10由半导体激光元件12A和12B以及用于安装半导体激光元件的基座14组成。 每个半导体激光元件在台面16上设置有激光条18，并且在脊条上具有p侧电极20，并且在台面侧的接触层上具有n侧电极22。 副基座设置有与p侧电极20接合的第一接合电极24，同时电绝缘，并且在与半导体的接合表面14a上与n侧电极22接合的第二接合电极26 激光元件。 第一接合电极24和第二接合电极26由Al布线层和焊料层形成。 设置有多个激光条纹的多光束半导体激光元件可以通过将p侧电极和第一接合电极接合而形成，将n侧电极和第二接合电极接合并将半导体激光元件安装在副安装座 通过结合系统。

公开(公告)号：JP2010212733A

公开(公告)日：2010-09-24

申请号：JP2010126507

申请日：2010-06-02

Applicant: Sony Corp ,  ソニー株式会社

Inventor： TAKAHASHI JUNKO ,  TAKANO SHIZUKO ,  OTA MAKOTO ,  GOTO OSAMU ,  HOSHINA YUKIO ,  YABUKI YOSHIBUMI

IPC: H01L21/304 ,  H01L33/32 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To suppress generation of fracture while a substrate is handled for forming an electrode or the like, or while a substrate is thinned, down and to manufacture the semiconductor light-emitting device or the semiconductor device so as to improve yields.
SOLUTION: A light emitting device structure formed with a GaN-based semiconductor layer and a p-side electrode are formed on a first main surface of an n-type GaN substrate 1. A predetermined portion including a scar 17 is removed by a dicer or the like, the scar 17 formed in an outer circumferential part of the n-type GaN substrate 1 while the light emitting device structure and the p-side electrode are formed. After that, the n-type GaN substrate 1 is thinned down from a second main surface side. An n-side electrode is formed on the second main surface of the n-type GaN substrate 1 thinned down.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：为了抑制在用于形成电极等的基板被处理时或在基板变薄的同时抑制断裂的产生，并且制造半导体发光器件或半导体器件，从而 提高产量。 解决方案：在n型GaN衬底1的第一主表面上形成由GaN基半导体层和p侧电极形成的发光器件结构。包括疤痕17的预定部分通过 切割器等，形成在n型GaN衬底1的外周部分中形成的瘢痕17，同时形成发光器件结构和p侧电极。 此后，n型GaN衬底1从第二主表面侧减薄。 在n型GaN衬底1的第二主表面上形成n侧电极。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2007059941A

公开(公告)日：2007-03-08

申请号：JP2006303673

申请日：2006-11-09

Applicant: Sony Corp ,  ソニー株式会社

Inventor： GOTO OSAMU ,  ASANO TAKEHARU ,  TAKEYA MOTONOBU ,  SUZUKI YASUHIKO ,  SHIBUYA KATSUYOSHI ,  MIZUNO TAKASHI ,  TOJO TAKESHI ,  UCHIDA SHIRO ,  IKEDA MASAO

IPC: H01S5/323 ,  H01L21/205 ,  H01L33/06 ,  H01L33/32

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device using nitride based III-V compound semiconductors, which has longer operating life by making the crystallinity of a optical wave guide to be good, and particularly, in a semiconductor laser, has a high symmetry of light intensity distribution in a far field pattern and a reduced aspect ratio of a radiation angle, and to provide its manufacturing method. SOLUTION: The semiconductor light emitting device is composed by sequentially laminating an n-type AlGaN cladding layer 5, an n-type GaN light wave guide layer 6, an active layer 7 made of InGaN, an undoped GaN light wave guide layer 17, a p-type AlGaN cap layer 9, a p-type AlGaN/GaN superlattice cladding layer 18, and a p-type GaN contact layer 12. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：为了提供一种通过使光波导的结晶性良好而具有更长使用寿命的氮化物III-V族化合物半导体的半导体发光元件，特别是在半导体激光器中， 具有远场图案中的光强度分布的高对称性和减小的辐射角的纵横比，并提供其制造方法。 解决方案：半导体发光器件通过依次层叠n型AlGaN包层5，n型GaN光波导层6，由InGaN制成的有源层7，未掺杂的GaN光波导层 17，p型AlGaN帽层9，p型AlGaN / GaN超晶格包覆层18和p型GaN接触层12.版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2006134987A

公开(公告)日：2006-05-25

申请号：JP2004320274

申请日：2004-11-04

Applicant: Sony Corp ,  ソニー株式会社

Inventor： FUNATO KENJI ,  TOMITANI SHIGETAKA ,  HOSHINA YUKIO ,  GOTO OSAMU

IPC: H01S5/323 ,  H01S5/22

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser capable of achieving the AlGaInN semiconductor laser having a long lifetime and a high reliability, also having excellent characteristics and having an oscillation wavelength longer than 405 nm, and to provide a method for manufacturing the same.
SOLUTION: An AlGaInN semiconductor layer forming a laser structure is grown on a GaN substrate 1 regularly having striped high defect-density regions 2 in a low defect-density region 1, and the AlGaInN semiconductor laser is manufactured by forming laser strips to the AlGaInN semiconductor layer. Distances (d) among the ends of the laser stripes and the end of a nearest second region are set at a value from 0 μm to 60 μm or the value from 10 μm to 50 μm in this case.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 解决的问题：为了提供能够实现具有长寿命和高可靠性的AlGaInN半导体激光器的半导体激光器，其具有优异的特性并且具有比405nm长的振荡波长，并且提供一种制造方法 一样。 解决方案：在低缺陷密度区域1中规则地具有带状高缺陷密度区域2的GaN衬底1上生长形成激光器结构的AlGaInN半导体层，并且通过将激光条形成为AlGaInN半导体激光器 AlGaInN半导体层。 在这种情况下，将激光条的端部和最近的第二区域的端部之间的距离（d）设定为0μm至60μm的值或10μm至50μm的值。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2004128520A

公开(公告)日：2004-04-22

申请号：JP2003417115

申请日：2003-12-15

Applicant: Sony Corp ,  Sumitomo Electric Ind Ltd ,  ソニー株式会社 ,  住友電気工業株式会社

Inventor： ASAZUMA YASUNORI ,  TOMITANI SHIGETAKA ,  TAMAMURA KOJI ,  TOJO TAKESHI ,  GOTO OSAMU ,  MOTOKI KENSAKU

IPC: H01L21/205 ,  H01L33/06 ,  H01L33/08 ,  H01L33/14 ,  H01L33/32 ,  H01L33/36 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device which has superior luminous properties, is very reliable, and has a long service life. SOLUTION: A method of manufacturing the semiconductor light emitting device includes a step of enabling a nitride III-V compound semiconductor layer forming a light emitting device structure to grow on a nitride III-V compound semiconductor substrate where a plurality of second regions having a second average dislocation density higher than a first average dislocation density possessed by a first crystal region are arranged in the first crystal region in a first direction at a first interval and arranged in a second direction perpendicular to the first direction at a second interval shorter than the first interval. In the above method, seven or more of the rows of the second regions in the second direction are not substantially included, and a device region is demarcated on the nitride III-V compound semiconductor substrate so as not to enable the second regions to be included in the light emitting region of the semiconductor light emitting device. COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2004088134A

公开(公告)日：2004-03-18

申请号：JP2003417114

申请日：2003-12-15

Applicant: Sony Corp ,  Sumitomo Electric Ind Ltd ,  ソニー株式会社 ,  住友電気工業株式会社

Inventor： ASAZUMA YASUNORI ,  TOMITANI SHIGETAKA ,  TAMAMURA KOJI ,  TOJO TAKESHI ,  GOTO OSAMU ,  MOTOKI KENSAKU

IPC: H01S5/323 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To realize a semiconductor light emitting element which has a good luminous characteristic, high reliability and a long operational life. SOLUTION: The semiconductor light emitting element includes a nitride-based Group III-V compound semiconductor substrate and a nitride-based Group III-V compound semiconductor layer. In the substrate, a plurality of second zones having a second average dislocation density higher than a first average dislocation density are regularly arranged in a first crystalline area having the first average dislocation density. The semiconductor layer having a light emitting element structure is grown on the substrate. At least one second area is present on end faces or corners of the substrate. COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2004023050A

公开(公告)日：2004-01-22

申请号：JP2002179875

申请日：2002-06-20

Applicant: Sony Corp ,  ソニー株式会社

Inventor： GOTO OSAMU ,  MATSUMOTO OSAMU ,  SASAKI TOMOMI ,  IKEDA MASAO

IPC: H01L33/06 ,  H01L33/14 ,  H01L33/32 ,  H01L33/36 ,  H01L33/44 ,  H01S5/02 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

CPC classification number: H01S5/0207 ,  H01S5/0014 ,  H01S5/0422 ,  H01S5/2201 ,  H01S5/32341

Abstract: PROBLEM TO BE SOLVED: To provide a GaN semiconductor light-emitting device which is formed on a GaN single-crystal substrate and has a structure the current leakage is reduced. SOLUTION: In the GaN semiconductor laser device 50, a p-side electrode and an n-side electrode are disposed on a laminated structure-side. The device has the same structure as that of a conventional GaN semiconductor layer device formed on a sapphire substrate, except that the laminated structure of a GaN compound semiconductor layer is formed directly on the GaN single-crystal substrate 52, without installing a GaN-ELO structure layer by using the GaN single crystal substrate 52, instead of the sapphire substrate. The GaN single-crystal substrate 50 has core parts 52a in continuous band shapes of 10μm width, and the interval between the core part 52a and the core part 52a is about 400μm. A laser stripe 30, a pad metal 37 of the p-side electrode 36 and the n-side electrode 38 are disposed in the laminated structure on a region, except the core part 52a of the GaN single crystal substrate 50. A horizontal distance S p between the pad metal 37 and an outer peripheral edge of the core part 52a and a horizontal distance S n between the n-side electrode 38 and the outer peripheral edge of the core part 52a are 95μm. COPYRIGHT: (C)2004,JPO