公开(公告)号：JP2007220844A

公开(公告)日：2007-08-30

申请号：JP2006038802

申请日：2006-02-16

Applicant: Sony Corp ,  ソニー株式会社

Inventor： MATSUZAWA NOBUYUKI ,  BOONTARIKA THUNNAKART ,  OZAWA KEN ,  KUROBE TOSHIHIRO ,  WATANABE YOKO

IPC: H01L21/027 ,  G03F7/11 ,  G03F7/20 ,  H01L21/768 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To provide an antireflection film capable of sufficiently reducing reflectance on an interface between a resist layer and a silicon semiconductor substrate, even if exposure light is made incident obliquely by one layer in a liquid immersion lithography technique, and to provide an exposure method. SOLUTION: The double layer structure antireflection film is used in exposing a resist layer in an exposure system having a wavelength of 190-195 nm and having a numerical aperture of 0.93-1.0, and is formed between the resist layer and a silicon nitride film formed on the surface of the silicon semiconductor substrate. When complex refractive indexes N 1 , N 2 of upper layer and lower layer constituting the antireflection film are expressed by the expressions; N 1 =n 1 -k 1 i, N 2 =n 2 -k 2 i, film thicknesses of the upper layer and lower layer are d 1 , d 2 and a predetermined combination is selected as the combination of values [n 10 , k 10 , d 10 , n 20 , k 20 , d 20 ], n 1 , k 1 , d 1 , n 2 , k 2 , d 2 satisfy the following relation: ä(n 1 -n 10 )/(n 1m -n 10 )} 2 +ä(k 1 -k 10 )/(k 1m -k 10 )} 2 +ä(d 1 -d 10 )/(d 1m -d 10 )} 2 +ä(n 2 -n 20 )/(n 2m -n 20 )} 2 +ä(k 2 -k 20 )/(k 2m -k 20 )} 2 +ä(d 2 -d 20 )/(d 2m -d 20 )} 2 ≤1. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：即使在液浸式光刻技术中使曝光光倾斜地入射一层，提供能够充分降低抗蚀剂层和硅半导体衬底之间的界面上的反射率的抗反射膜，以及 提供曝光方法。 解决方案：双层结构抗反射膜用于在波长为190-195nm并且具有0.93-1.0的数值孔径的曝光系统中曝光抗蚀剂层，并且形成在抗蚀剂层和硅之间 形成在硅半导体衬底的表面上的氮化物膜。 当复合折射率N 1 时，构成防反射膜的上层和下层的N 2 由表达式表示; N 1 = n 1 i，N 2 = n 2 -k 2，上层和下层的膜厚度为d SB> 1 ，d 2 ，并且选择预定的组合作为组合 的值[n 10 ，k 10 ，d 10 ，20 SB>，d 20 ，n 1 ，k 1 ，d 1 / SB>，k 2 ，d 2 满足以下关系：ä（n 1 -n 10 ） /（N 1M -n 10 ）} 2 + A（K 1 -k 10 < / SB>）/（K 1M -k 10 ）} 2 + A（D 1 -d < SB> 10 ）/（D 1M -d 10 ）} 2 + A（N 2 -n 20 ）/（N 2米 -n 20 ）} 2 + A（K 2 -k 20 ）/（K 2米 -k 20 ）} 2 + A（ ð 2 -d 20 ）/（D 2米 -d 20 ）} 2 ≤1。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2006269853A

公开(公告)日：2006-10-05

申请号：JP2005087570

申请日：2005-03-25

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OZAWA KEN

IPC: H01L21/027 ,  G03F7/20

Abstract: PROBLEM TO BE SOLVED: To provide polarization illumination of an exposure apparatus with which resolution property can be enhanced, in exposure of gate lines, or the like, having strict dimensional rules, when a desired pattern is obtained by projection mapping that uses a phase shift mask. SOLUTION: The exposure apparatus comprises a fly-eye lens array 304 arranged with fly-eye lenses in a matrix form, in order to equalize the intensity of light emitted from a light source, a rotation element array 302 consisting of a plurality of rotation elements for making the plane of vibration of passing light, arranged in correspondence with respective lens elements of the fly-eye lens array 304 rotate and having an optical axis parallel with the traveling direction of the light emitted from a light source, and a condenser lens 306 for irradiating a phase shift mask 308 with a light, having an orientation distribution of the plane of vibration in the plane of an equivalent light source via the fly-eye lens array 304 and the rotation element array 302, wherein the equivalent light source has a cross or radial cross shape and orientation distribution of the plane of vibration of light in the equivalent light source has a cross or radial cross shape. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：为了提供具有分辨率特性的曝光装置的偏振照明，在具有严格尺寸规则的栅极线等的曝光中，当通过使用的投影映射获得期望的图案时 相移掩模。 解决方案：曝光装置包括以矩阵形式布置有飞眼透镜的蝇眼透镜阵列304，以便均衡从光源发射的光的强度，由多个组成的旋转元件阵列302 用于使与透镜阵列304的各个透镜元件相对应设置的通过光的振动平面的旋转元件旋转，并且具有与从光源发射的光的行进方向平行的光轴，以及 聚光透镜306，用于通过经由飞眼透镜阵列304和旋转元件阵列302在等效光源的平面中具有振动平面的取向分布的光照射相移掩模308，其中等效光 源具有交叉或径向十字形，并且等效光源中的光的振动平面的取向分布具有交叉或径向十字形。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2006133313A

公开(公告)日：2006-05-25

申请号：JP2004319633

申请日：2004-11-02

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OZAWA KEN ,  INOUE KAZUHARU

IPC: G03F1/00 ,  G03F1/68 ,  G03F7/20

Abstract: PROBLEM TO BE SOLVED: To provide an exposure mask which has a simple structure suitable for manufacturing a microlens array in a random pitch for example and which can be easily produced. SOLUTION: The exposure mask aims to form a resist layer having a curved line on the surface represented by a function of R i =f i (P) as a design. When a mask pattern region between X i_a and X i_b corresponding to a closed interval [P i_a , P i_b ] on the resist layer is segmented into (2N i +1) of unit mask pattern regions comprising a light transmitting region and a light shielding region, an area ratio RT i_n älight transmitting region/(light transmitting region+light shielding region)} constituting each unit mask pattern region UMP 1_n (wherein n=0, 1 to 2N) is determined based on a value by f i (P i_a +nä¾P i_b -P i_a ¾/2N i }) and N i is a positive integer determined by ¾P i_b -P i_a ¾. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种具有简单结构的曝光掩模，该结构适用于例如以随机间距制造微透镜阵列并且可以容易地制造。 解决方案：曝光掩模旨在形成在由表面上表示的表面上具有曲线的抗蚀剂层，作为R 设计。 当对应于闭合间隔[P i_a ，P i_b 的X i_a 和X i_b 之间的掩模图案区域时， ]分割为包含透光区域和遮光区域的单位掩模图案区域的（2N i +1），面积比RT i_n 构成各单位掩模图案区域UMP 1_n （其中n = 0,1,1〜2N）的发送区域/（透光区域+遮光区域）}根据f （P i_a + n¾P i_b ¾¾¾¾¾and and and and and and <<<<<<<<< SB> i 是由¾PSB> i integer integer integer integer确定的正整数。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005049663A

公开(公告)日：2005-02-24

申请号：JP2003282245

申请日：2003-07-30

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OZAWA KEN

IPC: G01N21/956 ,  G03F1/30 ,  G03F1/68 ,  G03F1/84 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To easily detect both of a phase shift pattern defect and a normal mask pattern defect in a phase shift mask by an easy operation. SOLUTION: The mask inspection apparatus 100 to inspect phase defects in an exposure mask 150 is equipped with a light source 110, an illumination optical system 120 to homogenize the light L emitting from the light source 110, and an objective optical system 130 to condense the light L exiting from the illumination optical system 120 and transmitting through an exposure mask 150 for imaging onto an observation plane 140. The mask inspection apparatus 100 is also equipped with: a phase difference filter 167 disposed on the pupil plane PL of the objective optical system in the region where the 0-order diffraction light transmitting through the exposure mask 150 passes; and an annular aperture diaphragm 163 on the pupil plane iPL of the illumination optical system, the aperture diaphragm having a conjugate feature to the phase difference filter 167. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：通过简单的操作容易地检测相移掩模中的相移图案缺陷和普通掩模图案缺陷。 解决方案：用于检查曝光掩模150中的相位缺陷的掩模检查装置100配备有光源110，照明光学系统120以使从光源110发射的光L均匀化，并且物镜光学系统130 以将从照明光学系统120出射的光L冷凝并透过曝光掩模150进行成像到观察平面140.掩模检查装置100还配备有：相位差滤光器167，其设置在光瞳平面PL上 在透过曝光掩模150的0级衍射光通过的区域中的物镜光学系统; 以及在照明光学系统的光瞳平面iPL上的环形孔径光阑163，孔径光阑具有到相位差滤光器167的共轭特征。（C）2005，JPO＆NCIPI

公开(公告)号：JP2004061720A

公开(公告)日：2004-02-26

申请号：JP2002218114

申请日：2002-07-26

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OZAWA KEN ,  NIIKURA CHIE

IPC: G03F1/36 ,  G03F1/68 ,  G03F1/70 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To correct a process model matching with each layout pattern set as the object of the simulation and to enhance the fitting accuracy of a simulation.
SOLUTION: In the method for generating the process model of a simulation which predicts the shape of a layout pattern formed on a wafer from design information on a photomask, a test mask 50 with a light shielding pattern which represents all the layout patterns permitted in design is prepared, a test pattern is formed by pattern transfer of the test mask 50 under prescribed exposure conditions, the dimensions of the test pattern are measured to obtain actual measurement information, arithmetic operation of the actual measurement information, design information on the test mask, and the exposure conditions is carried out to generate a process model, and then the process model is weighted so that it is adapted to L/S (line and space) with the highest coefficient of distribution in the layout patterns to be the object of the simulation.
COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：纠正与作为模拟对象的每个布局模式匹配的过程模型，并提高仿真的拟合精度。 解决方案：在用于生成模拟的处理模型的方法中，其通过光掩模上的设计信息预测在晶片上形成的布局图案的形状，具有遮光图案的测试掩模50表示所有布局图案 准备了设计准备，通过在规定的曝光条件下图案转印测试掩模50形成测试图案，测量测试图案的尺寸以获得实际测量信息，实际测量信息的算术运算，关于 测试掩模，并且进行曝光条件以生成过程模型，然后对过程模型进行加权，使其适应于在布局图中具有最高分布系数的L / S（线和空间）为 模拟对象。 版权所有（C）2004，JPO

公开(公告)号：JP2012242948A

公开(公告)日：2012-12-10

申请号：JP2011110363

申请日：2011-05-17

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OZAWA KEN ,  IWASAKI MASANORI ,  MOGI HIDEAKI

IPC: G06F3/033 ,  G06F3/038 ,  G06T1/00

CPC classification number: G06F3/0304 ,  G06F3/038 ,  G06T3/40 ,  G06T7/246 ,  G06T2207/10016 ,  G06T2207/10024 ,  G06T2207/10048 ,  G06T2207/30196 ,  G06T2207/30204 ,  H04N21/42221 ,  H04N21/4223 ,  H04N21/44008

Abstract: PROBLEM TO BE SOLVED: To improve a user's operability in a free-cursor user interface.SOLUTION: An image capture unit outputs an RGB image based on a pixel signal corresponding to visible light of light which enters a lens, and an IR image based on a pixel signal corresponding to infrared light of the light which enters the lens. An ROI setting unit sets a movement region of an infrared light source in the IR image on the basis of the RGB image. A display control unit controls a degree of movement of a cursor on a display unit according to the movement of the infrared light source in the movement region. It is possible to apply the present technology, for example, to a television receiver which monitors a viewer's viewing state.

Abstract translation: 要解决的问题：提高用户在自由光标用户界面中的可操作性。 解决方案：图像捕获单元基于与进入透镜的光的可见光相对应的像素信号和基于对应于进入透镜的光的红外光的像素信号的IR图像来输出RGB图像。 ROI设定单元根据RGB图像设定IR图像中的红外光源的移动区域。 显示控制单元根据运动区域中的红外光源的移动来控制显示单元上的光标的移动程度。 例如，可以将本技术应用于监视观看者观看状态的电视接收机。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2007220848A

公开(公告)日：2007-08-30

申请号：JP2006038806

申请日：2006-02-16

Applicant: Sony Corp ,  ソニー株式会社

Inventor： MATSUZAWA NOBUYUKI ,  BOONTARIKA THUNNAKART ,  OZAWA KEN ,  KUROBE TOSHIHIRO ,  WATANABE YOKO

IPC: H01L21/027 ,  G02B1/11 ,  G03F7/11 ,  G03F7/20

Abstract: PROBLEM TO BE SOLVED: To provide an antireflection film capable of sufficiently reducing reflectance on an interface between a resist layer and a silicon semiconductor substrate, even if exposure light is made incident obliquely by one layer in a liquid immersion lithography technique, and to provide an exposure method. SOLUTION: The double layer structure antireflection film is used in exposing a resist layer in an exposure system having a wavelength of 190-195 nm and having a numerical aperture of 1.3-1.4, and is formed between the resist layer and a silicon nitride film formed on the surface of the silicon semiconductor substrate. When complex refractive indexes N 1 , N 2 of upper layer and lower layer constituting the antireflection film are expressed by the expressions; N 1 =n 1 -k 1 i, N 2 =n 2 -k 2 i, film thicknesses of the upper layer and lower layer are d 1 , d 2 and a predetermined combination is selected as the combination of values [n 10 , k 10 , d 10 , n 20 , k 20 , d 20 ], n 1 , k 1 , d 1 , n 2 , k 2 , d 2 satisfy the following relation: ä(n 1 -n 10 )/(n 1m -n 10 )} 2 +ä(k 1 -k 10 )/(k 1m -k 10 )} 2 +ä(d 1 -d 10 )/(d 1m -d 10 )} 2 +ä(n 2 -n 20 )/(n 2m -n 20 )} 2 +ä(k 2 -k 20 )/(k 2m -k 20 )} 2 +ä(d 2 -d 20 )/(d 2m -d 20 )} 2 ≤1. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：即使在液浸式光刻技术中使曝光光倾斜地入射一层，提供能够充分降低抗蚀剂层和硅半导体衬底之间的界面上的反射率的抗反射膜，以及 提供曝光方法。 解决方案：双层结构抗反射膜用于在波长为190-195nm并且数值孔径为1.3-1.4的曝光系统中曝光抗蚀剂层，并且形成在抗蚀剂层和硅之间 形成在硅半导体衬底的表面上的氮化物膜。 当复合折射率N 1 时，构成防反射膜的上层和下层的N 2 由表达式表示; N 1 = n 1 i，N 2 = n 2 -k 2，上层和下层的膜厚度为d SB> 1 ，d 2 ，并且选择预定的组合作为组合 的值[n 10 ，k 10 ，d 10 ，20 SB>，d 20 ，n 1 ，k 1 ，d 1 / SB>，k 2 ，d 2 满足以下关系：ä（n 1 -n 10 ） /（N 1M -n 10 ）} 2 + A（K 1 -k 10 < / SB>）/（K 1M -k 10 ）} 2 + A（D 1 -d < SB> 10 ）/（D 1M -d 10 ）} 2 + A（N 2 -n 20 ）/（N 2米 -n 20 ）} 2 + A（K 2 -k 20 ）/（K 2米 -k 20 ）} 2 + A（ ð 2 -d 20 ）/（D 2米 -d 20 ）} 2 ≤1。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2006171477A

公开(公告)日：2006-06-29

申请号：JP2004365220

申请日：2004-12-17

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OZAWA KEN ,  INOUE KAZUHARU

IPC: G02B6/13

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a highly accurate and highly integrated optical waveguide with high accuracy only with lithography technology, and an exposure mask to be used in the method. SOLUTION: This invention is concerned with the manufacturing method of the optical waveguide 1 which, when manufacturing the optical waveguide 1 in which light entering and emitting surfaces 2, 3 are formed in inclined surface-shape , and which is composed of cores 4 and a clad 5, arranges a plurality of main pattern openings 7 corresponding to the cores 4 in an adjacent relation, and forms dummy pattern openings 8 among the main pattern openings 7 in a direction of arrangement, and uniformizes intervals among the main pattern openings 7 and the dummy pattern openings 8 as a result, in a gray tone mask 6 which is to be used in the exposure of photosensitive material 9 to be used in the forming of the cores 4, and exposes the photosensitive material 9 using the gray tone mask 6, and manufactures the forming mold of the cores 4 using the mask obtained by development of the exposed photosensitive material 9. The exposure mask 6 is used in the manufacturing method. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种用于仅通过光刻技术制造高精度且高度集成的光波导的方法，以及用于该方法的曝光掩模。 解决方案：本发明涉及光波导1的制造方法，该光波导1在制造光入射发射表面2,3以倾斜表面形成并由芯构成的光波导1时 4和包层5以相邻的关系布置与芯4对应的多个主图形开口7，并且在主图案开口7中沿着布置方向形成虚设图形开口8，并且使主图案开口之间的间隔均匀化 7和虚拟图形开口8，在灰色调掩模6中，用于在用于形成芯4的光敏材料9的曝光中，并使用灰色调曝光感光材料9 掩模6，并使用通过曝光的感光材料9的显影获得的掩模制造芯4的成形模。在制造方法中使用曝光掩模6。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005175168A

公开(公告)日：2005-06-30

申请号：JP2003412363

申请日：2003-12-10

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OZAWA KEN ,  INOUE KAZUHARU

IPC: G03F1/68 ,  G03F1/70 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To provide a pattern processing method for executing high speed and highly precise pattern processing by independently executing division processing for each processing unit region, and verifying the arrangement pattern of each processing unit region before deciding it and a program for executing the processing method. SOLUTION: A layout pattern is divided into processing unit regions PUF1, and a margin M1 is set in each of those processing unit regions, and a pattern included in the processing unit region PUF1 having the margin M1 is extracted. The extracted pattern is divided into at least two as necessary in the processing unit region PUF1 having the margin M1, and the parts overlapped with a pattern 40 for verification having the same pattern arrangement as the layout pattern of the divided patterns 21 and 22 are defined as arrangement patterns 31 and 32. The pattern 40 for verification is updated by erasing the decided arrangement patterns 31 and 32 from the pattern 40 for verification in the processing unit region PUF1 having the margin M1. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种用于通过对每个处理单元区域独立地执行分割处理来执行高速和高精度图案处理的模式处理方法，以及在确定每个处理单元区域的布置模式和程序之前 用于执行处理方法。 解决方案：布局图案被划分为处理单元区域PUF1，并且在这些处理单元区域中的每一个中设置边距M1，并且提取包括在具有边缘M1的处理单元区域PUF1中的图案。 在具有边缘M1的处理单元区域PUF1中，根据需要将所提取的图案划分为至少两个，并且与划分图案21和22的布局图案具有相同图案布置的与用于验证的图案40重叠的部分被重叠 作为布置图案31和32.用于验证的图案40通过从图案40中擦除确定的布置图案31和32来更新，以在具有边缘M1的处理单元区域PUF1中进行验证。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2004163670A

公开(公告)日：2004-06-10

申请号：JP2002329612

申请日：2002-11-13

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OZAWA KEN

IPC: G03F1/36 ,  G03F1/68 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To provide a method for correcting an exposure mask so as to decrease a variance in dimension of a transfer pattern due to microflare.
SOLUTION: The method for correcting an exposure mask to be used in the process of forming a transfer pattern on a sensitive substrate includes the following processes. They are: a first process (S1 to S6) to divide a mask face into a plurality of unit cells and to calculate the effective pattern area rate with respect to the flare in each aimed cell; a second process to determine the dimensional change rate of the transfer pattern with respect to the effective pattern area rate for each kind of a plurality of patterns and to calculate the dimensional change amount of the transfer pattern due to the flare in each mask pattern in the aimed cell by using the effective pattern area rate and the dimensional change rate of the transfer pattern calculated in the first process; and a third process to calculate the dimensional correction of the mask pattern for each mask pattern included in the aimed cell based on the dimensional change amount of the transfer pattern calculated in the second process.
COPYRIGHT: (C)2004,JPO