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公开(公告)号：JP2015028960A
公开(公告)日：2015-02-12
申请号：JP2011263631
申请日：2011-12-01
Inventor： TODA ATSUSHI
IPC: H01L27/14 , G02B3/00 , G02B3/08 , H01L27/146 , H04N9/07
CPC classification number: G02B5/1885 , H01L27/14627 , H01L27/14629 , H04N2209/045
Abstract: 【課題】各色の光電変換部を同一の画素部内に積層させた構成において、色シェーディングの発生を効果的に防止することが可能な固体撮像装置を提供する。【解決手段】複数の画素部3が配列された撮像領域4と、各画素部3において各色に対応して積層された複数の光電変換部23b,23r,41gと、各画素部3において光電変換部23b,23r,41gに対する受光面A側に配置された複数の集光素子13とを備えた。各集光素子13は、撮像領域4の中心から離れるほど非対称性を高めたことにより、当該受光面に対する斜め入射光の主光線を当該受光面に対して垂直に近づけて集光させる。【選択図】図1
Abstract translation: 要解决的问题：提供一种能够有效地防止在相同像素部分中层叠各种颜色的光电转换部的结构中有色防止产生的固态成像装置。解决方案：固态成像装置包括： 配置多个像素部3的摄像区域4; 在各像素部3中对应于各颜色层叠的多个光电转换部23b，23r，41g; 以及多个集光元件13，其设置在相对于各像素部3的光电转换部23b，23r，41g的受光面A的一侧。在各集光元件13中，其不对称性增加 随着从成像区域4的中心的距离变大，使得到光接收表面的倾斜入射光的主光线垂直于待收集的光入射表面。
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公开(公告)号：JP2013016729A
公开(公告)日：2013-01-24
申请号：JP2011149972
申请日：2011-07-06
Inventor： HATANO KEISUKE , TODA ATSUSHI
IPC: H01L27/146 , H01L27/14 , H01L31/02 , H04N5/369 , H04N9/07
CPC classification number: H01L27/14647 , H01L27/14621 , H01L27/1464
Abstract: PROBLEM TO BE SOLVED: To provide a solid state image pickup device and an electronic apparatus, which have more excellent color reproducibility.SOLUTION: A solid state image pickup device comprises: a plurality of photoelectric conversion regions 23B, 23G, 23R laminated for every one pixel inside the same semiconductor substrate 22 at depths different from one another for photoelectric converting lights of wavelength regions different from one another; and a discharge region 24 formed between the photoelectric conversion regions 23B and 23G or between the photoelectric conversion regions 23G and 23R which are adjacent to each other in a depth direction of the semiconductor substrate among the plurality of photoelectric conversion regions 23B, 23G, 23R for discharging charge generated by photoelectric conversion in a region between the photoelectric conversion regions 23B and 23G or between the photoelectric conversion regions 23G and 23R.
Abstract translation: 要解决的问题：提供具有更优异的颜色重现性的固态图像拾取装置和电子装置。 解决方案：固态图像拾取装置包括：在相同的半导体衬底22内的每个像素的内部彼此不同的深度层叠的多个光电转换区域23B，23G，23R，用于不同于 另一个; 以及在多个光电转换区域23B，23G，23R中的在半导体衬底的深度方向上彼此相邻的光电转换区域23B和23G之间或光电转换区域23G和23R之间形成的放电区域24， 在光电转换区域23B和23G之间或光电转换区域23G和23R之间的区域中由光电转换产生的放电电荷。 版权所有（C）2013，JPO＆INPIT
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33.发明专利
公开(公告)号：JP2012075179A
公开(公告)日：2012-04-12
申请号：JP2011268192
申请日：2011-12-07
Inventor： TODA ATSUSHI , SATO GENTA
IPC: H04N9/07
Abstract: PROBLEM TO BE SOLVED: To enable influence of unnecessary wavelength-region components such as infrared light to be eliminated, even if an infrared filter is not used, in an imaging device.SOLUTION: A visible light region is detected by each detecting unit, after performing wavelength separation through filters C1, C2, C3, while an infrared light region is detected by a detection unit, after performing the wavelength separation through a filter C4. An imaging signal relating to visible light region components from which the influences of infrared light region components are eliminated is acquired by correcting signals SC1, SC2, SC3 detected through the filters C1, C2, C3 using a signal SC4 detected through the filter C4.
Abstract translation: 要解决的问题：即使不使用红外滤光器，也可以在成像装置中消除不需要的红外线等不必要的波长区域成分的影响。 解决方案：在通过滤波器C4进行波长分离之后，在通过滤波器C1，C2，C3进行波长分离之后，通过检测单元检测到红外光区域，由每个检测单元检测可见光区域。 通过使用通过滤波器C4检测的信号SC4对通过滤波器C1，C2，C3检测的信号SC1，SC2，SC3进行校正，获得与消除了红外光分量的影响的可见光区域成分相关的成像信号。 版权所有（C）2012，JPO＆INPIT
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公开(公告)号：JP2011135096A
公开(公告)日：2011-07-07
申请号：JP2011048860
申请日：2011-03-07
Inventor： TODA ATSUSHI
Abstract: PROBLEM TO BE SOLVED: To provide a solid-state imaging device capable of improving a resolution. SOLUTION: The solid-state imaging device includes a chip 13 of a solid-state imaging element, an imaging lens 11 for forming an image of light to the solid-state imaging element, and a material provided between the image-forming lens 11 and the chip 13 and having a refractive index larger than 1. The material with the refractive index larger than 1 constitutes an optical component 16 including a planar part 16B and a convex-shaped part 16A. The convex-shaped part 16A of the optical component 16 is in contact with the top of the uppermost layer of the chip 13. Thus, the solid-state imaging device having a contact width of the convex-shaped part 16A and the uppermost layer of the chip 13 of 800 nm or smaller is constituted. COPYRIGHT: (C)2011,JPO&INPIT
Abstract translation: 要解决的问题：提供能够提高分辨率的固态成像装置。 解决方案：固态成像装置包括固态成像元件的芯片13，用于向固态成像元件形成光的图像的成像透镜11以及设置在图像形成之间的材料 透镜11和芯片13，折射率大于1.折射率大于1的材料构成包括平面部分16B和凸形部分16A的光学部件16。 光学部件16的凸部16A与芯片13的最上层的顶部接触。因此，具有凸状部16A与最上层的接触宽度的固体摄像元件 构成800nm以下的芯片13。 版权所有（C）2011，JPO＆INPIT
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公开(公告)号：JP2010183095A
公开(公告)日：2010-08-19
申请号：JP2010065725
申请日：2010-03-23
Inventor： TODA ATSUSHI
IPC: H01L27/14 , H01L27/146 , H01L27/148 , H04N5/361 , H04N5/369
Abstract: PROBLEM TO BE SOLVED: To provide a solid-state imaging element securing a sufficient S/N ratio by reducing noise by a dark current.
SOLUTION: This solid-state imaging element 1 includes: a semiconductor layer 11 formed of silicon; a photoelectric conversion element PD formed in the semiconductor layer 11; and a single-crystal layer 25 formed at least on a part of the semiconductor layer 11 formed with the photoelectric conversion element PD thereon and formed of SiGeC.
COPYRIGHT: (C)2010,JPO&INPITAbstract translation: 要解决的问题：提供一种固态成像元件，其通过以暗电流降低噪声来确保足够的S / N比。 解决方案：该固态成像元件1包括：由硅形成的半导体层11; 形成在半导体层11中的光电转换元件PD; 以及至少形成在其上形成有光电转换元件PD的半导体层11的一部分上并由SiGeC形成的单晶层25。 版权所有（C）2010，JPO＆INPIT
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Patent Agency Ranking36.发明专利
公开(公告)号：JP2010161180A
公开(公告)日：2010-07-22
申请号：JP2009001996
申请日：2009-01-07
Inventor： TODA ATSUSHI
CPC classification number: H04N5/2254 , B29D11/00009 , B29D11/00807 , G02B3/0012 , G02B3/0075 , G02B6/0006 , G02B6/0008 , G02B27/32 , H01L27/14625 , H01L27/14685 , H04N5/3595 , Y10T29/49826
Abstract: PROBLEM TO BE SOLVED: To provide a solid-state image-taking apparatus capable of improving resolution.
SOLUTION: The solid-state image-taking apparatus includes a chip 13 of a solid-state image-taking device, an imaging lens 11 configured to focus light on the solid-state image-taking device, and a material 14 of a refraction index larger than 1, which is arranged between the imaging lens 11 and chip 13.
COPYRIGHT: (C)2010,JPO&INPITAbstract translation: 解决的问题：提供能够提高分辨率的固体摄像装置。 解决方案：固态摄像装置包括固态摄像装置的芯片13，被配置为将光聚焦在固态摄像装置上的成像透镜11以及固态摄像装置的材料14 大于1的折射率，其设置在成像透镜11和芯片13之间。版权所有（C）2010，JPO＆INPIT
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37.发明专利
公开(公告)号：JP2008099072A
公开(公告)日：2008-04-24
申请号：JP2006279732
申请日：2006-10-13
Inventor： SATO HIROKI , OIKE YUSUKE , TODA ATSUSHI
IPC: H04N9/07
Abstract: PROBLEM TO BE SOLVED: To use a common signal processing circuit to process a pixel signal taken out after thinning addition of signals and that taken out through all pixel reading, even if an oblique A checkered pattern is employed as a color filter array of a solid state imaging apparatus. SOLUTION: The solid state imaging apparatus includes a pixel array in which a plurality of pixels are arranged in matrix and in two dimension, with a pixel array in oblique grid, and a color filter array which uses color filters of R, G, B, and A in oblique A checkered structure. When it is driven in a thinning addition mode, three pixels adjoining in row direction are assumed as a unit pixel block, relating to the pixels for which color filters of R, G, and B are arrayed. In the unit pixel block, every other pixels starting with one arrayed at the end of the pixel block, in row direction, are objects for signal addition, while other than those are objects for signal thinning. Thinning addition is performed on pixel signal in units of pixel blocks adjoining each other in row direction. COPYRIGHT: (C)2008,JPO&INPIT
Abstract translation: 要解决的问题：为了使用公共信号处理电路来处理在稀疏化信号之后取出的像素信号，并且通过所有像素读取取出所取出的像素信号，即使采用倾斜的A格子图案作为滤色器阵列 的固态成像装置。 解决方案：固态成像装置包括像素阵列，其中多个像素以矩阵和二维排列，并且具有倾斜格栅的像素阵列，以及滤色器阵列，其使用R，G的滤色器 ，B和A在斜A方格结构。 当以薄化加法模式驱动时，与行方向相邻的三个像素被假设为与R，G和B的滤色器排列的像素有关的单位像素块。 在单位像素块中，从排列在像素块的末端的行开始的每个其他像素是用于信号相加的对象，而除了那些是用于信号稀疏的对象。 以行方向彼此相邻的像素块为单位的像素信号进行稀化添加。 版权所有（C）2008，JPO＆INPIT
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38.发明专利Solid-state imaging device, method of driving solid-state imaging device and imaging apparatus 审中-公开固态成像装置，驱动固态成像装置和成像装置的方法
公开(公告)号：JP2007259417A
公开(公告)日：2007-10-04
申请号：JP2007000977
申请日：2007-01-09
Inventor： IZUMI AKIO , TODA ATSUSHI , YOSHIHARA IKUO , AONUMA MASAYOSHI
Abstract: PROBLEM TO BE SOLVED: To provide a CCD solid-state imaging device capable of reading all picture elements with a high resolution even in a structure for obtaining a wide dynamic range or a structure capable of obtaining multiple color signals from the same picture element. SOLUTION: The solid-state imaging device 101 capable of reading all picture elements contains picture element arrays arranged in lines with multiple picture elements (photo diode 121(122)), each having two lines of vertical charge-coupled devices (vertical CCDs) 141, 142 (143, 144). COPYRIGHT: (C)2008,JPO&INPIT
Abstract translation: 要解决的问题：提供一种能够以高分辨率读取所有图像元素的CCD固态成像装置，即使在用于获得宽动态范围的结构或能够从相同图像获得多个颜色信号的结构 元件。 解决方案：能够读取所有图像元素的固态成像器件101包含以多个像素（光电二极管121（122））排成一行的像素阵列，每个像素阵列具有两行垂直电荷耦合器件（垂直 CCD）141,142（143,144）。 版权所有（C）2008，JPO＆INPIT
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39.发明专利
公开(公告)号：JP2006190958A
公开(公告)日：2006-07-20
申请号：JP2005209409
申请日：2005-07-20
Inventor： TODA ATSUSHI
IPC: H01L27/146 , G02B5/20 , G02B5/28 , H01L27/14 , H01L27/148 , H01L31/10 , H04N5/33
Abstract: PROBLEM TO BE SOLVED: To independently and simultaneously obtain a color image and an infrared ray image with one image sensor. SOLUTION: In a physical information acquiring method, a wiring layer constituting a signal line for reading an image signal from an in-pixel amplifier is formed on a semiconductor element where a photodiode and the in-pixel amplifier or the like are formed, and there is formed on the wiring layer a laminate film 1 that includes a structure where a plurality of layers having different refractive indexes between adjacent layers and having different predetermined thicknesses, and that has a characteristic where infrared rays IR are reflected and visible light VL is passed. For a plurality of pixels constituting a unit pixel matrix 12 infrared light is cut or is not cut for every pixel. Color filters 14R, 14G, and 14B for color imaging are formed on the laminate film 1 correspondingly to color pixels 12R, 12G, 12B. A color image is obtained on the basis of a pixel signal from the pixels 12R, 12G, and 12B where the laminate film 1 is formed. An infrared ray image is obtained on the basis of a pixel signal from a pixel 12IR where no laminate film 1 is formed. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract translation: 要解决的问题：使用一个图像传感器独立并同时获得彩色图像和红外线图像。 解决方案：在物理信息获取方法中，构成用于从像素内放大器读取图像信号的信号线的布线层形成在形成有光电二极管和像素内放大器等的半导体元件上 并且在布线层上形成层压膜1，其层叠膜1具有在相邻层之间具有不同折射率且具有不同预定厚度的多个层的结构，并且具有红外线IR被反射的特性，并且可见光VL 通过了 对于构成单位像素矩阵12的多个像素，对于每个像素，红外光被切断或不被切割。 用于彩色成像的彩色滤光片14R，14G和14B对应于彩色像素12R，12G，12B形成在层叠膜1上。 基于形成层叠膜1的像素12R，12G和12B的像素信号获得彩色图像。 基于来自不形成层压膜1的像素12IR的像素信号获得红外线图像。 版权所有（C）2006，JPO＆NCIPI
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公开(公告)号：JP2006024495A
公开(公告)日：2006-01-26
申请号：JP2004202903
申请日：2004-07-09
Inventor： TODA ATSUSHI , KAINO YURIKO , SUZUKI YUSUKE
CPC classification number: Y02E10/542
Abstract: PROBLEM TO BE SOLVED: To provide a photoelectric conversion element capable of achieving a further improvement in photoelectric conversion efficiency. SOLUTION: The photoelectric conversion element of the present invention comprises a photoelectric conversion layer 20 having a periodic structure and exhibiting a light confinement effect based on Bragg reflection resulting from the periodic structure. The periodic structure is formed of a multilayer film lamination structure 21, 22. Alternatively, the periodic structure is preferably formed of a photonic crystal. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract translation: 要解决的问题：提供能够进一步提高光电转换效率的光电转换元件。 解决方案：本发明的光电转换元件包括具有周期性结构的光电转换层20，并且具有基于由周期性结构产生的布拉格反射的光限制效应。 周期性结构由多层膜层压结构21,22形成。或者，周期性结构优选由光子晶体形成。 版权所有（C）2006，JPO＆NCIPI
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