YIG THIN FILM MICROWAVE DEVICE
    31.
    发明专利

    公开(公告)号:JPS6211303A

    公开(公告)日:1987-01-20

    申请号:JP15043185

    申请日:1985-07-09

    Applicant: SONY CORP

    Abstract: PURPOSE:To attain excellent temperature compensation with a simple constitu tion without supplying external energy by using a permanent magnet which the linear temperature coefficient of remanence at room temperature is specific so as to apply a bias magnetic field. CONSTITUTION:The magnetic circuit is formed by using the permanent magnet whose remanence at the room temperature is a value or above expressed in formula I and whose linear temperature coefficient is within + or -5% of a value expressed in formula II. In applying a DC bias magnetic field to a YIG thin film microwave element utilizing the ferri resonance by the circuit, the condition is satisfied, where the resonance frequency is a frequency f0 independently of temperature. As a result, excellent temperature compensation is applied without requiring external energy and increasing power consumption with the simple constitution. In the formula f0 is operating frequency, gamma is gyromagnetic ratio, NZY is anti-magnetic field coefficient of YIG thin film, 4piMSOY is the saturated magnetization of YIG at the room temperature and alpha1Y is the linear temperature coefficient of saturated magnetization of YIG around room temperature.

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