公开(公告)号：US20140217462A1

公开(公告)日：2014-08-07

申请号：US13762288

申请日：2013-02-07

Applicant: STMICROELECTRONICS (TOURS) SAS ,  UNIVERSITE FRANCOIS RABELAIS

Inventor： Samuel Menard ,  Gaël Gautier

IPC: H01L29/74 ,  H01L21/22

CPC classification number: H01L29/7424 ,  H01L29/0619 ,  H01L29/167 ,  H01L29/66386 ,  H01L29/747

Abstract: A high-voltage vertical power component including a silicon substrate of a first conductivity type, and a first semiconductor layer of the second conductivity type extending into the silicon substrate from an upper surface of the silicon substrate, wherein the component periphery includes: a porous silicon ring extending into the silicon substrate from the upper surface to a depth deeper than the first layer; and a doped ring of the second conductivity type, extending from a lower surface of the silicon surface to the porous silicon ring.

Abstract translation: 一种高电压垂直功率元件，包括第一导电类型的硅衬底和从硅衬底的上表面延伸到硅衬底中的第二导电类型的第一半导体层，其中所述元件周边包括：多孔硅 环从上表面延伸到深度比第一层深的硅衬底; 以及从硅表面的下表面延伸到多孔硅环的第二导电类型的掺杂环。